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    2sc2810

    Abstract: sanken transistor
    Text: SANKEN ELECTRIC CO LT» SSE D • 7 ^ 0 7 4 1 G O ü O ' m IDI H S A K J Silicon NPN Triple Diffused Planar - - o ☆High Voltage Switching Transistor 2SC2810 ^ i ' Application Example : eOutline Drawing 1 Switching Regulator and General Purpose * ••■•MT-25 T022Q


    OCR Scan     		PDF 2SC2810 MT-25 T022Q) 400min 18typ 45x01 T0220) 2sc2810 sanken transistor

    Untitled

    Abstract: No abstract text available
    Text: SANKEN ELECTRIC CO LTD 55E » • 7 ^ 0 7 4 1 OOGCHHô Û57 « S A K J Silicon NPN Triple Diffused Planar T - 3 2 rC P \ ☆ Complement to type 2SA 12 6 2 2SC3179 Application Example : • Outline Drawing 1 .MT-25 T022Q A u d io and General P urp ose


    OCR Scan     		PDF 2SC3179 MT-25 T022Q) 100max 60min 45x01 T0220)

    BI 370

    Abstract: TO220-3LD T0-220 0C99
    Text: Package Dimension T0220-3LD T022Q-3L PACKAGE OUTLINE DIMENSIONS D _ cl m bl Al el Sym bol D im e n s io n s n M illim e te rs D i m e n s i o n s In I n c h e s Min Max M in Max A 4 .470 4.670 0.176 0.184 A1 2 .520 2.820 0.C9 9 0 1 11 I 0.710 C.910 0.C2B


    OCR Scan     		PDF T0220-3LD T022Q-3L BI 370 TO220-3LD T0-220 0C99

    Q400414

    Abstract: 06040J7 TO810MH q2006l5 triac Q2008F51 Triac SC141D L201E5 SC136B L4004F91 T6401M
    Text: LORAS INDUSTRIES ITrms Amps PART No. INC 42E VDRM IDRM Volts mAmps PACKAGE Q1 D 5500440 TRIAC IGT Q2 Q3 mAmps DOOOODt. T IL O R A “T - 2 5 ' O Î VGT Volts Q4 Ih mAmps ITM Amps VTM Volts 0.6 Amps ITrms TO-92 Package MAC974 MAC976 0.6 0.6 MA0&7fr " : MAC97A3 "•


    OCR Scan     		PDF -T-25-0Ã MAC974 MAC976 MAC97AÂ MAC97A6 MAC97A8 SC92B T0218AC BTB41200B Q400414 06040J7 TO810MH q2006l5 triac Q2008F51 Triac SC141D L201E5 SC136B L4004F91 T6401M

    1RF540

    Abstract: 1RF620 1RF640 IRF614 IRF540 RF543 1RF530 IRF530 LM3661TL-1.25 IRF533
    Text: - £> tt £ f m * V Vd s € £ eg. tS Ta=25*0 Vg s Id Pd V g s th) loss Igss or * Vdg Hr (V) (V) * /CH * /CH (A) m (nA) Vg s (V) ( m A) Vd s (V) min max (V) (V) Ciss g fs Coss ft & 11 m Vg s =0 (max) *typ V g s (V) (Q) *typ (A) Id (A) Vg s (V) *typ (S)


    OCR Scan     		PDF 1RF522 O-220AB RF523 IRF530 IRF630 IRF631 T0-220AB 1RF540 1RF620 1RF640 IRF614 IRF540 RF543 1RF530 LM3661TL-1.25 IRF533

    IRF3205

    Abstract: IRF3205 E IRF3205 IR MOSFET IRF3205 irf3205 MOSFET
    Text: International lü Rectifier PD - 9.1279C IRF3205 PRELIMINARY HEXFET Power MOSFET • • • • • • Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Vdss = 55V


    OCR Scan     		PDF 1279C IRF3205 O-220 IRF3205 IRF3205 E IRF3205 IR MOSFET IRF3205 irf3205 MOSFET

    1RF530

    Abstract: 1RF540 1rf520 RF543 IRF530 IRF532 IRF533 IRF541 IRF542 IRF543
    Text: - f * m V Vd s £> tt £ £ Vg s eg. tS Ta=25*0 Id Pd V g s th) loss I gss or € * Vdg Hr (V) (V) * /CH * /CH (A) m (nA) Vg s (V) ( m A) Vd s (V) min max (V) (V) Ciss g fs Coss ft & 11 m Vg s =0 (max) *typ V g s ( Q ) (V) *typ (A) Id (A) Vg s (V) *typ (S)


    OCR Scan     		PDF 1RF522 O-220AB RF523 IRF530 IRF630 IRF631 T0-220AB 1RF530 1RF540 1rf520 RF543 IRF532 IRF533 IRF541 IRF542 IRF543

    2SC1817

    Abstract: TRANSISTOR PJ
    Text: S El ivi i C O N D U C T O R l TEI' .i l'nTIVTP, RP POWER TRANSISTOR t * 2SC1817 is de sign od for ilF.and VHP Power Amplifier. 'Applications. Most useful for 1 2 - w a t t SSß C i t i z e n s Ba nd Transceiver O u t p u t Stage. 1„ Featui'es / , 15 W min.


    OCR Scan     		PDF 2SC1817 12--Watfc Vcc-12 T0-22Ã Vctr-10Y 27MHz TRANSISTOR PJ

    10150 CT

    Abstract: schottky mbr MJFR MBR1015OCT MBR10200CT MBR1035CT Scans-008335
    Text: E MBR1035CT - MBR10200CT TAIWAN SEMICONDUCTOR 10.0 AM PS . Schottky Barrier Rectifiers RoHS T0-22QAB CO M PLIANCE - . . 1 Features <• P la s tic m £ te ria l used c s rrie a U n d e rw rite rs Lab o ra to ry C la s s ific a tio n s 9 4 V -0 M alar s ilico n ju n c tio n , m ajority c a rrie r cond u c tio n


    OCR Scan     		PDF MBR1035CT MBR10200CT O-220AB MBR10200CT) 10150 CT schottky mbr MJFR MBR1015OCT MBR10200CT Scans-008335

    2SC4630LS

    Abstract: 2SC4631LS 2SC4632LS 2SC4633LS 2SC4634LS 2SC4635LS 2SC4636LS 2SC4637LS 2SC4710LS T0-126ML
    Text: SAflYO T r a n s i s t o r s f o r V e r y H i g h - D e f in i t i o n C R T D i s p l a y H o r i z o n t a l D e f l e c t i o n O u t p u t U s e 3 afci D y n a m i cs F ' o c s t j i s U s e ( N o p i c t u r e e v e r o u t of f o c u s w i t h b e t t e r f o c u s c h a r a c t e r i s t i c s )


    OCR Scan     		PDF T0-220FI T0-220. diffus-126 T0-126LP T0-220CI T0-220ML SC-67, OT-186) O-220FIÂ SC-67KS0T-189} 2SC4630LS 2SC4631LS 2SC4632LS 2SC4633LS 2SC4634LS 2SC4635LS 2SC4636LS 2SC4637LS 2SC4710LS T0-126ML

    2SB1232

    Abstract: 2SB1240 2SB1255 2SB1223 2SB1224 2SB1225 2SB1226 2SB1227 2SB1228 2SB1229
    Text: - 82 - 5 Ta=25cC, *EPteTc=25'C Vcso Vc e o (V) (V) fu (A) (W) fó 4# tt (Ta=25'C) [*EP (3typ{È] hp Pc* (max) (uA) <W) VcB (V) (min) (max) Vc e (V) Ic/ I e (A) (max) (V) ' , —' (V) le (A) Ib (A) PD -70 -60 -4 2 20 -100 -40 2000 -2 -2 -1.5 -2 -2 -0.004


    OCR Scan     		PDF 2SB1223 2SB1224 2SB1225 2SB1226 2SB1227 2SB1228 2SB1229 2SD1891 O-220Fa) 2SB1251 2SB1232 2SB1240 2SB1255 2SB1223 2SB1225 2SB1226

    IRF 850 mosfet

    Abstract: Mini size of Discrete semiconductor elements 2SJ335 cp 035 sanyo CP 022 ND fa214 8ROM 2SK2637 marking 85m ok 2SJ382
    Text: Medium Output Power MOSFETs l N ew P a d o - g e : T S S O P 8 *0ne size sm aller than S0P8. Best su ited fo r higher performance and effic ie n c y of battery-pow ered equipment and av ailab le fo r h igh-density surface mount. S O P S ^Reduced surface mount area by 502 and thickness by 30Z over the SC-63(TP).package.


    OCR Scan     		PDF SC-63 T0-126LP T0-220CI T0-220ML SC-67, OT-186) O-220FIÂ SC-67KS0T-189} T0-220MF lsDwATT220> IRF 850 mosfet Mini size of Discrete semiconductor elements 2SJ335 cp 035 sanyo CP 022 ND fa214 8ROM 2SK2637 marking 85m ok 2SJ382

    insb

    Abstract: Hall Sensor insb HALL ELEMENT SHS361
    Text: T - .33-01 SANYO SEMICO NDUCTOR CORP DIE » 7 1 1 7 0 7 t DDQSSlfc 4 | " P a s - oi BIDIRECTIONAL THYRISTORS P \ V rm(V loo' ^A) 0.5 t - o i - an . ’200 ' DTA05B : •Vêt • : % imA) (vj;. Package . DTA05E 15 2.3 T092 DTA08E 10 1.5 T092 DTA1C DTA1E


    OCR Scan     		PDF DTC10C-N DTM10C-N DTC12C-N DTM12C-N T0202 T0220 T022Q insb Hall Sensor insb HALL ELEMENT SHS361

    ta7317

    Abstract: TA7311
    Text: I Power Transistore 2N5490-2N5497 353 7 HHAS File N um ber HARRIS SEMICOND SECTOR 27E I> M302271 G 0 n ò 7 M TERMINAL DESIGNATIONS Silicon N-P-N VERSAWATT Transistors G e n e r a l-P u rp o s e T y p e s fo r M e d iu m -P o w e r S w itc h in g an d A m p lifie r A p p lic a tio n s


    OCR Scan     		PDF 2N5490-2N5497 M302271 2N5490, 2N5491) 2N5492, 2N5493) 2N5494, 2N5495) 2N5496, 2N5497) ta7317 TA7311

    T0220 PACKAGE buk553

    Abstract: BUK553-50A BUK553-50B T0220AB
    Text: N AMER PHILIPS/DISCRETE SSE D • bbSBTBl OaSObaO =1 PowerMOS transistor Logic Level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies


    OCR Scan     		PDF BUK553-50A BUK553-50B BUK553 -ID/100 T0220 PACKAGE buk553 BUK553-50A BUK553-50B T0220AB

    LT 076

    Abstract: 0594 um18a xy 801 ic equivalent de LT1074
    Text: r r u TECHNOLOGY v m _ L T 1 Q 7 4 / L T 1 0 7 6 S te p -D o w n S w itc h in g R e g u la to r FCATURCS • ■ ■ ■ ■ ■ ■ ■ 5A On-Board Switch LT1074 100kHz Switching Frequency Greatly Improved Dynamic Behavior Available in Low Cost 5 and 7-Lead Packages


    OCR Scan     		PDF LT1074) 100kHz LT1074to LT1074 LT 076 0594 um18a xy 801 ic equivalent de LT1074

    IRF744

    Abstract: IRFBC10LC irf630 irf640 IRFZ44 MOSFETs IRF1310
    Text: International H EXFET liO R lR e c t i f i e r t o - 22oab Low charge HEXFETs reduce gate charge by 40% or more and capacitances by up to 85% without any added device cost. T0-22QAB N-Channel - “ Low Charge” V BR oss Part Number Drain-to-Source RDS(on) Iq Continuous


    OCR Scan     		PDF 22oab T0-22QAB IRF740LC IRF840LC IRFBC40LC IRFBC10LC T0-220AB O-22QAB IRFZ46 IRF1010 IRF744 IRFBC10LC irf630 irf640 IRFZ44 MOSFETs IRF1310

    3866S

    Abstract: transistor a999 bs 7818 -1995 transistor tt 2206 A999 transistor TT 2206 transistor a1535A 8340UAS transistor 3866S 2SD 4515
    Text: H Integrated Circuits MOS LSIs Page MOS LSI Type No. Page Type No. Page Type No. Page Type No. Page M N 171608 42 A M N 18P73210 43 M N 3210 69 M N 5179/H 91 M N 171609 42 AM N 18P73215 43 M N 3214 69 MN5181 91 M N 3102 69 M N 53 00 0 Series 55 M N 33 00 Series


    OCR Scan     		PDF 1020G N12861 N12B62 MN1381 MN13811 MN13821 15P0802 15P5402 58851A 70803A 3866S transistor a999 bs 7818 -1995 transistor tt 2206 A999 transistor TT 2206 transistor a1535A 8340UAS transistor 3866S 2SD 4515

    buk7530-55

    Abstract: mosfet-n SOT166 TOPFET buk7530
    Text: SELECTION GUIDE Page TOPFETs 14 PowerMOS Transistors 16 Insulated Gate Bipolar Transistors 23 Philips Semiconductors TOPFETs VDS Selection Guide @ID FUSION O) (V) (A) Id w Pd (W) TYPE NUMBER TECHNOLOGY ENVELOPE 50 0.028 25 50 125 BUK106-50L TOPFET SOT263


    OCR Scan     		PDF 56-800A BUK446-800A BUK456-800B BUK446-800B BUK454-800A BUK444-800A BUK454-800B BUK444-800B BUK456-1000B BUK446-1000B buk7530-55 mosfet-n SOT166 TOPFET buk7530

    Untitled

    Abstract: No abstract text available
    Text: r r u n m _ LT1581/LT1581-2.5 TECHNOLOGY 1OA, Very Low D ro p o u t R egulator KfìTUlKS DCSCRIPTIOn • Low Dropout, 430mV at 10A Output Current ■ Fast Transient Response ■ Remote Sense ■ 1mV Load Regulation ■ Fixed 2.5V Output and Adjustable Output


    OCR Scan     		PDF LT1581/LT1581-2 430mV 10OmV LT1575/LT1577 LT1580 LT1584 LT1585

    TO-32-070

    Abstract: 2SA1678 FC102 2SC4449 2SA1416 2SJ193 2sk283 2sC4106 application notes 2SC3383 FC124
    Text: Transistors with Built-in Resistors Absolute maximum ratings Device Package typ» Application te Vcso V Vceo Vebo (V) (V) (mA) Pc (mW) Electrical characteristics (T, = 25 deg. C) IcBQ max # Vc b Ti «les- Ci Ic b o max m hfE & Vce ic Vc b (V) hfH Vce (V)


    OCR Scan     		PDF T0220ML TO-32-070 2SA1678 FC102 2SC4449 2SA1416 2SJ193 2sk283 2sC4106 application notes 2SC3383 FC124

    Untitled

    Abstract: No abstract text available
    Text: Ordering number : EN2498 No.2498 SMlYO i S B 1 0 0 - 0 9 J Schottky B arrier Diode Twin Type Cathode Common 90V, 10A R e c t i f i e r Applications . High frequency rectification (switching regulators, converters, choppers) Features . Low forward voltage (Vpmax=0.85V)


    OCR Scan     		PDF EN2498

    T1P132

    Abstract: TIP135 texas tip 132 *P131 opto
    Text: TE X A S I N S T R -COPTO} 8961726 TEXAS bä INST R DE § flit,17 2b OPTO 62C □ □ 3 b *=]□b 36906 TIPI 30, TIPI 31, TIPI 32 N-P-N DARLINGTON SILICON POWER TRANSISTORS R EV ISED O CTOBER 1984 • Designed For Complementary Use With TIP135, TIP136, TIP137


    OCR Scan     		PDF TIP135, TIP136, TIP137 T-33-29 T0-22QAB T1P132 TIP135 texas tip 132 *P131 opto

    motorola transistor dpak marking

    Abstract: CASE 77 case77 DPak Package size AR145
    Text: AR145 Rev 1 DPAKTHE POWER PACKAGE FOR SURFACEMOUNT APPLICATIONS By Dave Hollander Motorola Inc. Phoenix, AZ Reprinted by permission of POWERTECHNICS September 1985,. 1985, Darnell Research Inc. All Rights Reserved. MOTOROLA Semiconductor Products Inc. P.O. BOX 20912 • PHOENIX, ARIZONA 85036


    OCR Scan     		PDF AR145 motorola transistor dpak marking CASE 77 case77 DPak Package size