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    TSOP56

    Abstract: 2N 5551 datasheet A0-A21 M58LW032D
    Text: M58LW032D 32 Mbit 4Mb x8, 2Mb x16, Uniform Block 3V Supply Flash Memory FEATURES SUMMARY • WIDE x8 or x16 DATA BUS for HIGH BANDWIDTH ■ Figure 1. Packages SUPPLY VOLTAGE – VDD = VDDQ = 2.7 to 3.6V for Program, Erase and Read operations ■ ACCESS TIME


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    M58LW032D 110ns 90ns/25ns, 110ns/25ns TSOP56 KWord/128KByte TSOP56 2N 5551 datasheet A0-A21 M58LW032D PDF

    JESD97

    Abstract: M29DW128F TSOP56 6C80
    Text: M29DW128F 128 Mbit 16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block 3V supply Flash memory Feature summary • Supply voltage – VCC = 2.7V to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional) ■ Asynchronous Random/Page Read


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    M29DW128F TSOP56 32-Word 16Mbit 48Mbit 16Mbit TBGA64 JESD97 M29DW128F TSOP56 6C80 PDF

    M29W128FL

    Abstract: Memory Protection Devices M29W128FH JESD97 M29W128F TSOP56
    Text: M29W128FH M29W128FL 128 Mbit 8Mb x 16 or 16Mb x 8, Page, Uniform Block 3V Supply Flash Memory Feature summary • Supply voltage – VCC = 2.7 to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional) ■ Asynchronous Random/Page Read


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    M29W128FH M29W128FL Words/16 TSOP56 32-Word 64-Bytes) M29W128FL Memory Protection Devices M29W128FH JESD97 M29W128F TSOP56 PDF

    M29W128GL

    Abstract: M29W128GH70 M29W128G M29W128GL7
    Text: M29W128GH M29W128GL 128-Mbit 16 Mbit x8 or 8 Mbit x16, page, uniform block 3 V supply flash memory Features BGA „ Supply voltage – VCC = 2.7 to 3.6 V for program, erase, read – VCCQ = 1.65 to 3.6 V for I/O buffers – VPPH = 12 V for fast program (optional)


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    M29W128GH M29W128GL 128-Mbit 64-byte M29128GH/L: Kbytes/64 M29W128GL M29W128GH70 M29W128G M29W128GL7 PDF

    JESD97

    Abstract: M29DW128F TSOP56 esn 234 D2578 5PWA
    Text: M29DW128F 128 Mbit 16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block 3V supply Flash memory Features summary • Supply Voltage – VCC = 2.7V to 3.6V for Program, Erase and Read – VCCQ= 1.65V to 3.6V for Input/Output – VPP =12V for Fast Program (optional)


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    M29DW128F TSOP56 32-Word TBGA64 16Mbit 48Mbit 16Mbit JESD97 M29DW128F TSOP56 esn 234 D2578 5PWA PDF

    28F320J3A

    Abstract: 28F640J3A M58LW032C M58LW032D M58LW064C M58LW064D TSOP56 EasyBGA64 memory bandwidth
    Text: TA254 TECHNICAL ARTICLE M58LWxxC and M58LWxxD: ST Introduces a New Family of Flash Memories for High Performance Applications Ruggero De Luca, Roberto Incerto, Marc Guedj, Flash Memory Division, STMicroelectronics, Agrate, Italy To meet designers' needs for Flash memories for


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    TA254 M58LWxxC M58LWxxD: M58LWxxD M58LWxxA M58LWxxB 28F320J3A 28F640J3A M58LW032C M58LW032D M58LW064C M58LW064D TSOP56 EasyBGA64 memory bandwidth PDF

    DQ141

    Abstract: No abstract text available
    Text: M29DW128F 128 Mbit 16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block 3V Supply, Flash Memory PRELIMINARY DATA Features summary • Supply Voltage – VCC = 2.7V to 3.6V for Program, Erase and Read – VCCQ= 1.65V to 3.6V for Input/Output – VPP =12V for Fast Program (optional)


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    M29DW128F 32-Word 16Mbit 48Mbit 16Mbit DQ141 PDF

    Untitled

    Abstract: No abstract text available
    Text: M58LW032A 32 Mbit 2Mb x16, Uniform Block, Burst 3V Supply Flash Memory FEATURES SUMMARY • WIDE x16 DATA BUS for HIGH BANDWIDTH ■ Figure 1. Packages SUPPLY VOLTAGE – VDD = 2.7 to 3.6V core supply voltage for Program, Erase and Read operations – VDDQ = 1.8V to VDD for I/O Buffers


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    M58LW032A TSOP56 56MHz 90/25ns 110/25ns 110ns. TBGA64 PDF

    TSOP56 Package Tape

    Abstract: No abstract text available
    Text: M58LW064D 64 Mbit 8Mb x8, 4Mb x16, Uniform Block 3V Supply Flash Memory FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ WIDE x8 or x16 DATA BUS for HIGH BANDWIDTH SUPPLY VOLTAGE – VDD = VDDQ = 2.7 to 3.6V for Program, Erase and Read operations


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    M58LW064D 110ns 110/25ns KWord/128KByte 0020h M58LW064D: 0017he M58LW064D110N6P M58LW064D TSOP56 Package Tape PDF

    M29W640

    Abstract: 2298H AI12781 M29W640GH AI12782 M29W640GB 3A00 M29W640GT
    Text: M29W640GH, M29W640GL M29W640GT, M29W640GB 64 Mbit 8Mb x8 or 4Mb x16, Page 3V supply Flash memory Feature summary • Supply Voltage – VCC = 2.7V to 3.6V for Program, Erase, Read – VPP =12V for Fast Program (optional) ■ Asynchronous Random/Page Read


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    M29W640GH, M29W640GL M29W640GT, M29W640GB Word/32 M29W640GH/L: M29W640GT/B M29W640 2298H AI12781 M29W640GH AI12782 M29W640GB 3A00 M29W640GT PDF

    Untitled

    Abstract: No abstract text available
    Text: M58LW064D 64 Mbit 8Mb x8, 4Mb x16, Uniform Block 3V Supply Flash Memory PRELIMINARY DATA FEATURES SUMMARY • WIDE x8 or x16 DATA BUS for HIGH BANDWIDTH ■ Figure 1. Packages SUPPLY VOLTAGE – VDD = VDDQ = 2.7 to 3.6V for Program, Erase and Read operations


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    M58LW064D 110ns 110/25ns TSOP56 KWord/128KByte M58LW064D: 0017h TBGA64 PDF

    M29W640

    Abstract: 8858H
    Text: M28W320FST M28W320FSB M28W320FSU M28W640FST M28W640FSB M28W640FSU 32 Mbit 2Mb x16 and 64 Mbit (4Mb x16) 3V supply, Boot Block and Uniform Block, Secure Flash memories Feature summary • Supply voltage – VDD = 2.7V to 3.6V Core Supply voltage – VDDQ= 2.7V to 3.6V Input/Output Voltage


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    M28W320FST M28W320FSB M28W320FSU M28W640FST M28W640FSB M28W640FSU 64-KWord M28W320FSU: M28W640FSU: M29W640 8858H PDF

    Untitled

    Abstract: No abstract text available
    Text: M28W320FSU M28W640FSU 32Mbit 2Mb x16 and 64Mbit (4Mb x16) 3V Supply, Uniform Block, Secure Flash Memories FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE – VDD = 2.7V to 3.6V Core Power Supply – VDDQ= 2.7V to 3.6V for Input/Output


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    M28W320FSU M28W640FSU 32Mbit 64Mbit 64-KWord M28W320FSU: M28W640FSU: PDF

    TSOP56

    Abstract: M58LW064D
    Text: M58LW064D 64 Mbit 8Mb x8, 4Mb x16, Uniform Block 3V Supply Flash Memory PRELIMINARY DATA FEATURES SUMMARY • WIDE x8 or x16 DATA BUS for HIGH BANDWIDTH ■ Figure 1. Packages SUPPLY VOLTAGE – VDD = VDDQ = 2.7 to 3.6V for Program, Erase and Read operations


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    M58LW064D 110ns 110/25ns TSOP56 KWord/128KByte TBGA64 TSOP56 M58LW064D PDF

    sn 5551

    Abstract: CR10 J-STD-020B M58LW064C TSOP56
    Text: M58LW064C 64 Mbit 4Mb x 16, Uniform Block, Burst 3V Supply Flash Memory FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ WIDE x16 DATA BUS for HIGH BANDWIDTH SUPPLY VOLTAGE – VDD = 2.7 to 3.6V core supply voltage for Program, Erase and Read operations


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    M58LW064C 56MHz 110ns sn 5551 CR10 J-STD-020B M58LW064C TSOP56 PDF

    M28W640FSU

    Abstract: 8857H A0-A21 M28W320FSU
    Text: M28W320FSU M28W640FSU 32Mbit 2Mb x16 and 64Mbit (4Mb x16) 3V Supply, Uniform Block, Secure Flash Memories FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE – VDD = 2.7V to 3.6V Core Power Supply – VDDQ= 2.7V to 3.6V for Input/Output


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    M28W320FSU M28W640FSU 32Mbit 64Mbit 64-KWord M28W320FSU: M28W640FSU: M28W640FSU 8857H A0-A21 M28W320FSU PDF

    M29W128FL

    Abstract: JESD97 M29W128F M29W128FH TSOP56 a12a22
    Text: M29W128FH M29W128FL 128 Mbit 8Mb x 16 or 16Mb x 8, Page, Uniform Block 3V Supply Flash Memory Feature summary • Supply voltage – VCC = 2.7 to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional) ■ Asynchronous Random/Page Read


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    M29W128FH M29W128FL Words/16 TSOP56 32-Word 64-Bytes) TBGA64 M29W128FL JESD97 M29W128F M29W128FH TSOP56 a12a22 PDF

    M29DW256G

    Abstract: M29dw256 spansion TSOP56
    Text: M29DW256G 256-Mbit x16, multiple bank, page, dual boot 3 V supply flash memory Features BGA „ Supply voltage – VCC = 2.7 to 3.6 V for program, erase, read – VCCQ = 1.65 to 3.6 V for I/O buffers – VPPH = 9 V for fast program (optional) „ Asynchronous random/page read


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    M29DW256G 256-Mbit 32Mbit 96Mbit M29DW256G M29dw256 spansion TSOP56 PDF

    M29dw127

    Abstract: No abstract text available
    Text: M29DW127G 128-Mbit 8 Mbit x16 or 16 Mbit x8 , multiple bank, page, dual boot 3 V supply flash memory Features „ Supply voltage – VCC = 2.7 to 3.6 V for program, erase and read – VCCQ = 1.65 to 3.6 V for I/O buffers – VPPH = 12 V for fast program (optional)


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    M29DW127G 128-Mbit 32-word M29dw127 PDF

    Untitled

    Abstract: No abstract text available
    Text: M29DW128F 128 Mbit 16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block 3V supply Flash memory Feature summary „ Supply voltage – VCC = 2.7V to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional) „ Asynchronous Random/Page Read – Page width: 8 Words


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    M29DW128F 32-Word 16Mbit 48Mbit 16Mbit PDF

    STI5519

    Abstract: viper32 STI5518 sti5516 STI5518B STV0700 sti5519 DATASHEETS STI5528 STV0499 STI5517
    Text: Leading the way in the set-top box world You decide the functionality… Multiple/interactive Interactive STB ST has developed complete scalable solutions targeted for low to high end set-top box requirements. With our silicon technology and your system knowledge we can easily deliver


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    PDF

    Untitled

    Abstract: No abstract text available
    Text: M58LW032A 32 Mbit 2Mb x16, Uniform Block 3V Supply Flash Memory PRODUCT PREVIEW FEATURES SUMMARY • WIDE x16 DATA BUS for HIGH BANDWIDTH ■ Figure 1. Packages SUPPLY VOLTAGE – VDD = 2.7 to 3.6V core supply voltage for Program, Erase and Read operations


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    M58LW032A TSOP56 56MHz 90/25ns TBGA64 PDF

    Untitled

    Abstract: No abstract text available
    Text: M29W128FH M29W128FL 128 Mbit 8Mb x 16 or 16Mb x 8, Page, Uniform Block 3V Supply Flash Memory Features summary • Supply voltage – VCC = 2.7 to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional) ■ Asynchronous Random/Page Read


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    M29W128FH M29W128FL Words/16 TSOP56 32-Word 64-Bytes) TBGA64 PDF

    Untitled

    Abstract: No abstract text available
    Text: M58LW064D 64 Mbit 8Mb x8, 4Mb x16, Uniform Block 3V Supply Flash Memory PRELIMINARY DATA FEATURES SUMMARY WIDE x8 or x16 DATA BUS for HIGH BANDWIDTH Figure 1. Packages SUPPLY VOLTAGE – VDD = VDDQ = 2.7 to 3.6V for Program, Erase and Read operations ACCESS TIME


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    M58LW064D 110ns 110/25ns TSOP56 KWord/128KByte TBGA64 0020h PDF