TSOP56
Abstract: 2N 5551 datasheet A0-A21 M58LW032D
Text: M58LW032D 32 Mbit 4Mb x8, 2Mb x16, Uniform Block 3V Supply Flash Memory FEATURES SUMMARY • WIDE x8 or x16 DATA BUS for HIGH BANDWIDTH ■ Figure 1. Packages SUPPLY VOLTAGE – VDD = VDDQ = 2.7 to 3.6V for Program, Erase and Read operations ■ ACCESS TIME
|
Original
|
M58LW032D
110ns
90ns/25ns,
110ns/25ns
TSOP56
KWord/128KByte
TSOP56
2N 5551 datasheet
A0-A21
M58LW032D
|
PDF
|
JESD97
Abstract: M29DW128F TSOP56 6C80
Text: M29DW128F 128 Mbit 16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block 3V supply Flash memory Feature summary • Supply voltage – VCC = 2.7V to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional) ■ Asynchronous Random/Page Read
|
Original
|
M29DW128F
TSOP56
32-Word
16Mbit
48Mbit
16Mbit
TBGA64
JESD97
M29DW128F
TSOP56
6C80
|
PDF
|
M29W128FL
Abstract: Memory Protection Devices M29W128FH JESD97 M29W128F TSOP56
Text: M29W128FH M29W128FL 128 Mbit 8Mb x 16 or 16Mb x 8, Page, Uniform Block 3V Supply Flash Memory Feature summary • Supply voltage – VCC = 2.7 to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional) ■ Asynchronous Random/Page Read
|
Original
|
M29W128FH
M29W128FL
Words/16
TSOP56
32-Word
64-Bytes)
M29W128FL
Memory Protection Devices
M29W128FH
JESD97
M29W128F
TSOP56
|
PDF
|
M29W128GL
Abstract: M29W128GH70 M29W128G M29W128GL7
Text: M29W128GH M29W128GL 128-Mbit 16 Mbit x8 or 8 Mbit x16, page, uniform block 3 V supply flash memory Features BGA Supply voltage – VCC = 2.7 to 3.6 V for program, erase, read – VCCQ = 1.65 to 3.6 V for I/O buffers – VPPH = 12 V for fast program (optional)
|
Original
|
M29W128GH
M29W128GL
128-Mbit
64-byte
M29128GH/L:
Kbytes/64
M29W128GL
M29W128GH70
M29W128G
M29W128GL7
|
PDF
|
JESD97
Abstract: M29DW128F TSOP56 esn 234 D2578 5PWA
Text: M29DW128F 128 Mbit 16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block 3V supply Flash memory Features summary • Supply Voltage – VCC = 2.7V to 3.6V for Program, Erase and Read – VCCQ= 1.65V to 3.6V for Input/Output – VPP =12V for Fast Program (optional)
|
Original
|
M29DW128F
TSOP56
32-Word
TBGA64
16Mbit
48Mbit
16Mbit
JESD97
M29DW128F
TSOP56
esn 234
D2578
5PWA
|
PDF
|
28F320J3A
Abstract: 28F640J3A M58LW032C M58LW032D M58LW064C M58LW064D TSOP56 EasyBGA64 memory bandwidth
Text: TA254 TECHNICAL ARTICLE M58LWxxC and M58LWxxD: ST Introduces a New Family of Flash Memories for High Performance Applications Ruggero De Luca, Roberto Incerto, Marc Guedj, Flash Memory Division, STMicroelectronics, Agrate, Italy To meet designers' needs for Flash memories for
|
Original
|
TA254
M58LWxxC
M58LWxxD:
M58LWxxD
M58LWxxA
M58LWxxB
28F320J3A
28F640J3A
M58LW032C
M58LW032D
M58LW064C
M58LW064D
TSOP56
EasyBGA64
memory bandwidth
|
PDF
|
DQ141
Abstract: No abstract text available
Text: M29DW128F 128 Mbit 16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block 3V Supply, Flash Memory PRELIMINARY DATA Features summary • Supply Voltage – VCC = 2.7V to 3.6V for Program, Erase and Read – VCCQ= 1.65V to 3.6V for Input/Output – VPP =12V for Fast Program (optional)
|
Original
|
M29DW128F
32-Word
16Mbit
48Mbit
16Mbit
DQ141
|
PDF
|
Untitled
Abstract: No abstract text available
Text: M58LW032A 32 Mbit 2Mb x16, Uniform Block, Burst 3V Supply Flash Memory FEATURES SUMMARY • WIDE x16 DATA BUS for HIGH BANDWIDTH ■ Figure 1. Packages SUPPLY VOLTAGE – VDD = 2.7 to 3.6V core supply voltage for Program, Erase and Read operations – VDDQ = 1.8V to VDD for I/O Buffers
|
Original
|
M58LW032A
TSOP56
56MHz
90/25ns
110/25ns
110ns.
TBGA64
|
PDF
|
TSOP56 Package Tape
Abstract: No abstract text available
Text: M58LW064D 64 Mbit 8Mb x8, 4Mb x16, Uniform Block 3V Supply Flash Memory FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ WIDE x8 or x16 DATA BUS for HIGH BANDWIDTH SUPPLY VOLTAGE – VDD = VDDQ = 2.7 to 3.6V for Program, Erase and Read operations
|
Original
|
M58LW064D
110ns
110/25ns
KWord/128KByte
0020h
M58LW064D:
0017he
M58LW064D110N6P
M58LW064D
TSOP56 Package Tape
|
PDF
|
M29W640
Abstract: 2298H AI12781 M29W640GH AI12782 M29W640GB 3A00 M29W640GT
Text: M29W640GH, M29W640GL M29W640GT, M29W640GB 64 Mbit 8Mb x8 or 4Mb x16, Page 3V supply Flash memory Feature summary • Supply Voltage – VCC = 2.7V to 3.6V for Program, Erase, Read – VPP =12V for Fast Program (optional) ■ Asynchronous Random/Page Read
|
Original
|
M29W640GH,
M29W640GL
M29W640GT,
M29W640GB
Word/32
M29W640GH/L:
M29W640GT/B
M29W640
2298H
AI12781
M29W640GH
AI12782
M29W640GB
3A00
M29W640GT
|
PDF
|
Untitled
Abstract: No abstract text available
Text: M58LW064D 64 Mbit 8Mb x8, 4Mb x16, Uniform Block 3V Supply Flash Memory PRELIMINARY DATA FEATURES SUMMARY • WIDE x8 or x16 DATA BUS for HIGH BANDWIDTH ■ Figure 1. Packages SUPPLY VOLTAGE – VDD = VDDQ = 2.7 to 3.6V for Program, Erase and Read operations
|
Original
|
M58LW064D
110ns
110/25ns
TSOP56
KWord/128KByte
M58LW064D:
0017h
TBGA64
|
PDF
|
M29W640
Abstract: 8858H
Text: M28W320FST M28W320FSB M28W320FSU M28W640FST M28W640FSB M28W640FSU 32 Mbit 2Mb x16 and 64 Mbit (4Mb x16) 3V supply, Boot Block and Uniform Block, Secure Flash memories Feature summary • Supply voltage – VDD = 2.7V to 3.6V Core Supply voltage – VDDQ= 2.7V to 3.6V Input/Output Voltage
|
Original
|
M28W320FST
M28W320FSB
M28W320FSU
M28W640FST
M28W640FSB
M28W640FSU
64-KWord
M28W320FSU:
M28W640FSU:
M29W640
8858H
|
PDF
|
Untitled
Abstract: No abstract text available
Text: M28W320FSU M28W640FSU 32Mbit 2Mb x16 and 64Mbit (4Mb x16) 3V Supply, Uniform Block, Secure Flash Memories FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE – VDD = 2.7V to 3.6V Core Power Supply – VDDQ= 2.7V to 3.6V for Input/Output
|
Original
|
M28W320FSU
M28W640FSU
32Mbit
64Mbit
64-KWord
M28W320FSU:
M28W640FSU:
|
PDF
|
TSOP56
Abstract: M58LW064D
Text: M58LW064D 64 Mbit 8Mb x8, 4Mb x16, Uniform Block 3V Supply Flash Memory PRELIMINARY DATA FEATURES SUMMARY • WIDE x8 or x16 DATA BUS for HIGH BANDWIDTH ■ Figure 1. Packages SUPPLY VOLTAGE – VDD = VDDQ = 2.7 to 3.6V for Program, Erase and Read operations
|
Original
|
M58LW064D
110ns
110/25ns
TSOP56
KWord/128KByte
TBGA64
TSOP56
M58LW064D
|
PDF
|
|
sn 5551
Abstract: CR10 J-STD-020B M58LW064C TSOP56
Text: M58LW064C 64 Mbit 4Mb x 16, Uniform Block, Burst 3V Supply Flash Memory FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ WIDE x16 DATA BUS for HIGH BANDWIDTH SUPPLY VOLTAGE – VDD = 2.7 to 3.6V core supply voltage for Program, Erase and Read operations
|
Original
|
M58LW064C
56MHz
110ns
sn 5551
CR10
J-STD-020B
M58LW064C
TSOP56
|
PDF
|
M28W640FSU
Abstract: 8857H A0-A21 M28W320FSU
Text: M28W320FSU M28W640FSU 32Mbit 2Mb x16 and 64Mbit (4Mb x16) 3V Supply, Uniform Block, Secure Flash Memories FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE – VDD = 2.7V to 3.6V Core Power Supply – VDDQ= 2.7V to 3.6V for Input/Output
|
Original
|
M28W320FSU
M28W640FSU
32Mbit
64Mbit
64-KWord
M28W320FSU:
M28W640FSU:
M28W640FSU
8857H
A0-A21
M28W320FSU
|
PDF
|
M29W128FL
Abstract: JESD97 M29W128F M29W128FH TSOP56 a12a22
Text: M29W128FH M29W128FL 128 Mbit 8Mb x 16 or 16Mb x 8, Page, Uniform Block 3V Supply Flash Memory Feature summary • Supply voltage – VCC = 2.7 to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional) ■ Asynchronous Random/Page Read
|
Original
|
M29W128FH
M29W128FL
Words/16
TSOP56
32-Word
64-Bytes)
TBGA64
M29W128FL
JESD97
M29W128F
M29W128FH
TSOP56
a12a22
|
PDF
|
M29DW256G
Abstract: M29dw256 spansion TSOP56
Text: M29DW256G 256-Mbit x16, multiple bank, page, dual boot 3 V supply flash memory Features BGA Supply voltage – VCC = 2.7 to 3.6 V for program, erase, read – VCCQ = 1.65 to 3.6 V for I/O buffers – VPPH = 9 V for fast program (optional) Asynchronous random/page read
|
Original
|
M29DW256G
256-Mbit
32Mbit
96Mbit
M29DW256G
M29dw256
spansion TSOP56
|
PDF
|
M29dw127
Abstract: No abstract text available
Text: M29DW127G 128-Mbit 8 Mbit x16 or 16 Mbit x8 , multiple bank, page, dual boot 3 V supply flash memory Features Supply voltage – VCC = 2.7 to 3.6 V for program, erase and read – VCCQ = 1.65 to 3.6 V for I/O buffers – VPPH = 12 V for fast program (optional)
|
Original
|
M29DW127G
128-Mbit
32-word
M29dw127
|
PDF
|
Untitled
Abstract: No abstract text available
Text: M29DW128F 128 Mbit 16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block 3V supply Flash memory Feature summary Supply voltage – VCC = 2.7V to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional) Asynchronous Random/Page Read – Page width: 8 Words
|
Original
|
M29DW128F
32-Word
16Mbit
48Mbit
16Mbit
|
PDF
|
STI5519
Abstract: viper32 STI5518 sti5516 STI5518B STV0700 sti5519 DATASHEETS STI5528 STV0499 STI5517
Text: Leading the way in the set-top box world You decide the functionality… Multiple/interactive Interactive STB ST has developed complete scalable solutions targeted for low to high end set-top box requirements. With our silicon technology and your system knowledge we can easily deliver
|
Original
|
|
PDF
|
Untitled
Abstract: No abstract text available
Text: M58LW032A 32 Mbit 2Mb x16, Uniform Block 3V Supply Flash Memory PRODUCT PREVIEW FEATURES SUMMARY • WIDE x16 DATA BUS for HIGH BANDWIDTH ■ Figure 1. Packages SUPPLY VOLTAGE – VDD = 2.7 to 3.6V core supply voltage for Program, Erase and Read operations
|
Original
|
M58LW032A
TSOP56
56MHz
90/25ns
TBGA64
|
PDF
|
Untitled
Abstract: No abstract text available
Text: M29W128FH M29W128FL 128 Mbit 8Mb x 16 or 16Mb x 8, Page, Uniform Block 3V Supply Flash Memory Features summary • Supply voltage – VCC = 2.7 to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional) ■ Asynchronous Random/Page Read
|
Original
|
M29W128FH
M29W128FL
Words/16
TSOP56
32-Word
64-Bytes)
TBGA64
|
PDF
|
Untitled
Abstract: No abstract text available
Text: M58LW064D 64 Mbit 8Mb x8, 4Mb x16, Uniform Block 3V Supply Flash Memory PRELIMINARY DATA FEATURES SUMMARY WIDE x8 or x16 DATA BUS for HIGH BANDWIDTH Figure 1. Packages SUPPLY VOLTAGE – VDD = VDDQ = 2.7 to 3.6V for Program, Erase and Read operations ACCESS TIME
|
Original
|
M58LW064D
110ns
110/25ns
TSOP56
KWord/128KByte
TBGA64
0020h
|
PDF
|