character generater
Abstract: No abstract text available
Text: 4M BIT 256K W O RD x 16 B IT / 512K W O R D x 8BIT CM OS M ASK ROM DESCRIPTION The BYTE The The TC534200P/F is a 4,194,304 bits read only memory organized as 262,144 words by 16 bits when is logical high, and is organized as 524,288 words by 8 bits when BYTE is logical low.
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OCR Scan
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TC534200P/F
600mil
40pin
525mil
150ns
20/uA
TC534200P
TC534200P/F--
character generater
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PDF
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TC534200P
Abstract: No abstract text available
Text: • IIS 4M BIT 256K W O RD x 16 B IT /5 1 2 K W O R D x 8B IT CM OS M ASK ROM DESCRIPTION The TC534200P/F is a 4,194,304 bits read only memory organized as 262,144 words by 16 bits when BVt E is logical high, and is organized as 524,288 words by 8 bits when BYTE is logical low.
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OCR Scan
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BIT/512K
TC534200P/F
600mil
40pin
525mil
150ns
TC534200P
DIP40-P-
TC534200P
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PDF
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TC534200P
Abstract: No abstract text available
Text: TC534200P/F 4 M BIT 256K W O R D x 16 BIT/512K W O R D x 8BIT C M O S M A S K RO M PRELIMINARY DESCRIPTION The TC534200P/F is a 4,194,304 bits read only memory organized as 262,144 words by 16 bits when BYTE is logical high, and is organized as 524,288 words by 8 bits when BYTE is logical low.
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OCR Scan
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TC534200P/F
BIT/512K
TC534200P/F
600mil
40pin
525mil
150ns
TC534200P
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PDF
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534200P
Abstract: No abstract text available
Text: SILICON STACKED GATE MOS INTEGRATED CIRCUIT TC534200P/F-4M BIT 256K W O R D x 16 BIT /51 2K W O R D x 8 B IT C M O S M A S K RO M DESCRIPTIO N T h e T C 5 3 4 2 0 0 P /F is a 4 ,1 9 4 ,3 0 4 b its re a d only m em ory o rgan ize d a s 2 6 2 ,1 4 4 w ords b y 16 b its w hen
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OCR Scan
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TC534200P/F---------------------------4M
TC534200P/F
534200P
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PDF
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TC534200F
Abstract: UTC A11 TC534200P
Text: TOSHIBA TC534200P/F SILICON STACKED GATE CMOS 262,144 WORD x 16 BIT/524,288 WORD x 8 BIT CMOS MASK ROM Description The TC534200P/F is a 4,194,304 bit read only memory organized as 262,144 words by 16 bits when BYTE is logical high and organized as 524,288 words by 8 bits when BY I t is logical low.
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OCR Scan
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TC534200P/F
BIT/524
TC534200P/F
600mil
40-pin
525mil
TC534200P
TC534200F
UTC A11
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PDF
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SOP40 eprom
Abstract: TC534200P tc534200
Text: *1* »i f i ti v n t B H H H ti P r ^ 4 M E G A BIT 262,144 W O R D x 16 B IT / 524,288 W O R D x SBtT C M O S O N E TIM E P R O G R A M M A B LE R EA D O N LY M E M O R Y DESCRIPTION The TC 544200P/F is a 4,194,304 bit CMOS One tim e program m able read only memory,
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OCR Scan
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16BIT/
TC544200P/F
120ns/150ns/200ns
60mA/8
TC574200D0
TC544200P/Fâ
DIP40-P-600
22TYP
SOP40 eprom
TC534200P
tc534200
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PDF
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HA1334
Abstract: TC534200P
Text: TOSHIBA TC544200P/F-120, -150 SILICON STACKED GATE CMOS 262,144 WORD x 16 BIT/524,288 WORD x 8 BIT CMOS ONE TIME PROGRAMMABLE READ ONLY MEMORY Description T heT C 544200P /F is a 4,194,304 word x 16 bit CMOS one time programmable read only memory. It is organized as either
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OCR Scan
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TC544200P/F-120,
BIT/524
544200P
544200P/F
40-pin
TC544200P/F
120ns/150ns
60mA/8
TC574200D
HA1334
TC534200P
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PDF
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TC574200D-150
Abstract: C1906
Text: 4MEGA BIT 262,144 WORD X 16BIT/ 524,288 WORD x 8BIT CMOS U.V. ERASABLE AND ELECTRICALLY PROGRAMMABLE READ ONLY MEMORY PRELIMINARY DESCRIPTION The TC574200D is a 4,194,304 bit CMOS ultraviolet light erasable and electrically programmable read only memory. It is organized as 256K words of 16 bit or 512K words of 8 b it
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OCR Scan
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16BIT/
TC574200D
120ns
/150ns
200ns
TC574200D-120,
TC574200D-150
C1906
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PDF
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41C1000
Abstract: fujitsu 814100 TC 55464 toshiba HN62304 hn623257 658128 816b 41c464 hn62324 M7202A
Text: MEM ORY ICs FUNCTION GUIDE 3. C R O S S REFERENCE GUIDE 3.1 DRAM Density Org. Samsung Mode Toshiba Hitachi Fujitsu H M 51 256 M B 81256 NEC Oki 64K X 1 Page K M 416 4 25 6 K X 1 F. Page KM 41C256 TC 51256 Nibble KM 41C257 TC51257 S. C olu m n KM 41C258 TC 51258
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OCR Scan
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41C256
41C257
41C258
41C464
41C466
41C1000
44C256
44C258
44C1002
TC51257
fujitsu 814100
TC 55464 toshiba
HN62304
hn623257
658128
816b
hn62324
M7202A
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PDF
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TA8172AF
Abstract: TB 1226 BN TA8859P mg75n2ys40 t6961A TA8242AK ta8644n 7378P ta8310 7628P
Text: Index of Type Number Type Number 015Z10 015Z11 015Z12 015Z2.0 015Z2.0-12 015Z2.2 015Z2.4 015Z2.7 015Z3.0 015Z3.3 015Z3.6 015Z3.9 015Z4.3 015Z4.7 015Z5.1 015Z5.6 015Z6.2 015Z6.8 015Z7.5 015Z8.2 015Z9.1 02CZ10 02CZ11 0 2 C Z 12 0 2 C Z 13 0 2 C Z 15 0 2 C Z 16
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OCR Scan
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015Z10
015Z11
015Z12
015Z2
015Z3
TA8172AF
TB 1226 BN
TA8859P
mg75n2ys40
t6961A
TA8242AK
ta8644n
7378P
ta8310
7628P
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PDF
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574200D
Abstract: TC574200D-10
Text: TOSHIBA TC574200D-10, -120, -150 SILICON STACKED GATE CMOS 262,144 WORD x 16 BIT CMOS UV ERASABLE AND ELECTRICALLY PROGRAMMABLE READ ONLY MEMORY Description The TC574200D is a 262,144 word x 16 bit CMOS ultraviolet light erasable and electrically programmable read only memory. It
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OCR Scan
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TC574200D-10,
TC574200D
574200D
40-pin
100ns/120ns/150ns
70mA/10MHz.
TC574200D
TC574200D.
TC574200D-10
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PDF
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41C464
Abstract: 41C1000 TC55B8128 424170 NEC CY70199 44C1000 IOT7164 HN62308BP HN62404P TC5116100
Text: MEM ORY ICs CRO SS REFERENCE GUIDE 3. C R O SS REFERENCE GUIDE 3.1 DRAM Density 25 6 K Org. X 1 X 4 1M X 1 X 4 4M X 1 X 4 x8 16M M ode Sa m su n g F. Page KM 41C256 TC 51256 N ibble KM 41C257 TC 51257 S. C o lu m n KM 41C258 TC 51258 H M 51 258 MB81258 F. Page
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OCR Scan
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41C256
41C257
41C258
41C464
41C466
41C1000
41C1002
44C256
44C258
41C4000
TC55B8128
424170 NEC
CY70199
44C1000
IOT7164
HN62308BP
HN62404P
TC5116100
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PDF
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K93C46
Abstract: 93cs46n MB832001 hn62308 41C1000 93C46LN 41464 hn623257 HM63832 DT71256
Text: MEMORY ICs CROSS REFERENCE GUIDE 3. CROSS REFERENCE GUIDE 3.1 DRAM D ensity 256K X 1 F. P a g e KM 41C 256 TC 51256 X 1 X 4 4M X 1 X 4 , 1 6M To sh iba M od e X 4 1M Sam su ng Org. H ita ch i Fu jitsu HM 51256 M B81256 NEC /iP D 4 1 2 5 6 N ib b le KM 41C 257
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OCR Scan
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416C256
14800A
14900A
514170B
514280B
KM23C16000G
KM23C16100G
KM23C16000FP
KM23C16100FP
HN624017FB
K93C46
93cs46n
MB832001
hn62308
41C1000
93C46LN
41464
hn623257
HM63832
DT71256
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PDF
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TC55B8128
Abstract: KM23C4000AG TC534000AF HN62308BP TC551632 hitachi cross mb83 68512U HITACHI 64k DRAM TC55B4256
Text: MEMORY ICs CROSS REFERENCE GUIDE 3. CROSS REFERENCE GUIDE 3.1 DRAM D ensity 2 56 K 1M Org. x1 Toshiba F Page T C 51256 N ib b le K M 4 1C 2 5 7 T C 51257 H ita ch i H M 51 2 5 6 — F u jitsu M B 8 12 5 6 M B 8 12 5 7 NEC /P D 41256 — Oki M S M 5 1C 2 5 6
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OCR Scan
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TC511001
TC514101
514170B
514280B
TC5316200P
KM2X16100
KM23C16000G
KM23C16100G
KM23C16000FP
KM23C16100FP
TC55B8128
KM23C4000AG
TC534000AF
HN62308BP
TC551632
hitachi cross
mb83
68512U
HITACHI 64k DRAM
TC55B4256
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PDF
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TC574200D-10
Abstract: No abstract text available
Text: SILICON STACKED GATE MOS INTEGRATED CIRCUIT TC574200D-10,-120,-150 4 M E G A B IT 262,144 W O R D X 16 B IT / 524,288 W O R D x 8 BIT C M O S U.V . E R A S A B L E A N D E L E C T R IC A L L Y P R O G R A M M A B L E R E A D O N L Y M E M O R Y DESCRIPTIO N
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OCR Scan
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TC574200D-10
TC574200D
150ns
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PDF
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TC5816FT
Abstract: TC5332410F TC5316200CP TC531621 TC5310
Text: CMOS Flash E2PROM Capacity 1MBit flash X6 Max. Power Dissipation mW Power Supply Max. Accès» Organization Time(ns) V p p (V) Voc(V) Typ» No. Wiita/Erase Standby Read Operating Write/Erase Temperature Method 600mil DIP •TC58F010F-10, 12 525mil SOP •TC58F010FT10, 12
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OCR Scan
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TC58F010P-10,
600mil
525mil
TC58F010F-10,
TC58F010FT10,
TC58F010TR-10,
TC58F010T-10,
TC58F4000P-12,
TC58F4000F-12,
450mi!
TC5816FT
TC5332410F
TC5316200CP
TC531621
TC5310
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PDF
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TC574200D-10
Abstract: TC5740000 TC574200D-120 TC574200D-150 T0740 TC534200P ON4039 TCS74200D
Text: — -, ~’ N p| • ÏÊBÊBSmÈÊBÊÊÊâÊSm ffjpllill *■f tr i * WÊÊÊÊÊMÊÎÎÊMâKÊkÊtk^SÎ IflN 4M EGA BIT 262,144 W O R D x 16BIT/524.288 WORD X8BIT CMOS U.V. ERASABLE AND ELECTRICALLY PROGRAMMABLE READ ONLY MEMORY DESCRIPTION The TC574200D
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OCR Scan
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16BIT/524
TC574200D
100ns
120ns
150ns
TC574200D.
A10-A17.
TC574200Dâ
TC574200D-10
TC5740000
TC574200D-120
TC574200D-150
T0740
TC534200P
ON4039
TCS74200D
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PDF
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