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    TCS 3200 Search Results

    TCS 3200 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MK3200SILFTR Renesas Electronics Corporation 32.768KHz Clock Oscillator Visit Renesas Electronics Corporation
    84132-000 Renesas Electronics Corporation 4Kx4 SRAM Visit Renesas Electronics Corporation
    FS1023-2001-DL Renesas Electronics Corporation Liquid Flow Sensor Module, 0 to 3 SLPM Visit Renesas Electronics Corporation
    7MB6320-000 Renesas Electronics Corporation SRAM MODULE Visit Renesas Electronics Corporation
    MK3200SLF Renesas Electronics Corporation 32.768KHz Clock Oscillator Visit Renesas Electronics Corporation
    SF Impression Pixel

    TCS 3200 Price and Stock

    ams OSRAM Group TCS3200EVM

    EVAL MODULE FOR TCS3200
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey TCS3200EVM Box 1
    • 1 $170.64
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    • 100 $170.64
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    • 10000 $170.64
    		Buy Now

    ams OSRAM Group TCS3200D-TR

    IC COLOR SENSOR LIGHT-FREQ 8SOIC
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey TCS3200D-TR Reel
    • 1 -
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    • 10000 -
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    Samtec Inc TCSD-05-D-32.00-01-N

    Ribbon Cables / IDC Cables IDC Socket Cable Assemblies, 2.00mm Pitch
    Free Sample
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics TCSD-05-D-32.00-01-N
    • 1 $14.05
    • 10 $13.3
    • 100 $10.87
    • 1000 $6.99
    • 10000 $6.99
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    Samtec Inc TCSD-10-D-03.20-01-N

    Ribbon Cables / IDC Cables IDC Socket Cable Assemblies, 2.00mm Pitch
    Free Sample
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics TCSD-10-D-03.20-01-N
    • 1 $11.37
    • 10 $10.51
    • 100 $8.33
    • 1000 $6.35
    • 10000 $6.35
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    Samtec Inc TCSD-05-D-32.00-01-F-N

    Ribbon Cables / IDC Cables IDC Socket Cable Assemblies, 2.00mm Pitch
    Free Sample
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics TCSD-05-D-32.00-01-F-N
    • 1 $12.35
    • 10 $11.41
    • 100 $9.05
    • 1000 $6.9
    • 10000 $6.9
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    Find more TCS 3200 price and stock on Findchips.com

    TCS 3200 Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    TCS3200D-TR ams Sensors, Transducers - Color Sensors - IC COLOR SENSOR LIGHT-FREQ 8SOIC Original PDF
    TCS3200D-TR Texas Advanced Optoelectronic Solutions Color Sensors, Sensors, Transducers, IC COLOR SENSOR LIGHT-FREQ 8SOIC Original PDF
    TCS3200EVM ams AG TCS3200 - Sensor Modules & Development Tools Evaluation Module Color LTF Original PDF
    TCS3200EVM Texas Advanced Optoelectronic Solutions Evaluation Boards - Sensors, Programmers, Development Systems, EVAL MODULE FOR TCS3200 Original PDF

    TCS 3200 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    tms320tci6488 evm

    Abstract: TMS320TCI6488 ddr2 ram
    Text: Application Report SPRAB57—June 2009 TMS320TCI6488 Memory Access Performance Communication Infrastructure Brighton Feng Abstract The TMS320TCI6488 has three C64x+ cores, each of which has 32KB L1D SRAM, 32KB L1P SRAM, 3MB L2 SRAM and can be configured as 1MB/1 MB/1 MB or 1.5


    Original     		SPRAB57--June TMS320TCI6488 32-bit 667MHz 512MB TCI6488 tms320tci6488 evm ddr2 ram PDF

    "1t-sram"

    Abstract: TSMC 0.18um CL018G M1T2HT18FL64E MoSys
    Text: High Speed Flow-through 2-Mbit 32Kx64 Standard 1T-SRAM Embedded Memory Macro M1T2HT18FL64E • High Speed 1T-SRAM Standard Macro • 100 MHz operation • 1-Clock cycle time • Flow-through read access timing • Late write mode timing • 64-Bit wide data buses


    Original     		32Kx64) M1T2HT18FL64E 64-Bit CL018G M1T2HT18FL64E 2300um 32Kx64 3200um "1t-sram" TSMC 0.18um MoSys PDF

    3.3kOhm

    Abstract: No abstract text available
    Text: Renesas LSIs M5M29KB/T641AVP 67,108,864-BIT 8,388,608-WORD BY 8-BIT /4,194,304-WORD BY 16-BIT CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY DESCRIPTION The M5M29KB/T641AVP are 3.3V-only high speed 67,108,864-bit CMOS boot block FLASH Memories with alternating BGO(Back Ground Operation) feature. The BGO


    Original     		M5M29KB/T641AVP 864-BIT 608-WORD 304-WORD 16-BIT) M5M29KB/T641AVP 864-bit REJ03C0024 3.3kOhm PDF

    M5M29KE131BTP

    Abstract: 52-pin TSOP
    Text: Renesas LSIs Preliminary M5M29KE131BTP Notice: This is not a final specification. Some parametric limits are subject to change. 134,217,728-BIT 16,777,216-WORD BY 8-BIT / 8,388,608-WORD BY 16-BIT CMOS FLASH MEMORY Stacked-uMCP (micro Multi Chip Package)


    Original     		M5M29KE131BTP 728-BIT 216-WORD 608-WORD 16-BIT) M5M29KE131BTP 64M-bit 52-pin 128M-bit REJ03C0206-0001Z 52-pin TSOP PDF

    74h 132

    Abstract: WA.N4
    Text: Renesas LSIs Preliminary M5M29KB/T641ATP Notice: This is not a final specification. Some parametric limits are subject to change. 67,108,864-BIT 8,388,608-WORD BY 8-BIT /4,194,304-WORD BY 16-BIT CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY DESCRIPTION M5M29KB/T641ATP provides for Software Lock Release function.


    Original     		M5M29KB/T641ATP 864-BIT 608-WORD 304-WORD 16-BIT) M5M29KB/T641ATP 864-bit REJ03C0236 74h 132 WA.N4 PDF

    M5M29KE131BVP

    Abstract: No abstract text available
    Text: Renesas LSIs Preliminary M5M29KE131BVP Notice: This is not a final specification. Some parametric limits are subject to change. 134,217,728-BIT 16,777,216-WORD BY 8-BIT / 8,388,608-WORD BY 16-BIT CMOS FLASH MEMORY Stacked-uMCP (micro Multi Chip Package)


    Original     		M5M29KE131BVP 728-BIT 216-WORD 608-WORD 16-BIT) M5M29KE131BVP 64M-bit 48-pin 128M-bit REJ03C0183-0010Z PDF

    WD04

    Abstract: 24Blocks
    Text: Renesas LSIs M5M29KB/T331AVP 33,554,432-BIT 4,194,304-WORD BY 8-BIT /2,097,152-WORD BY 16-BIT CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY DESCRIPTION The M5M29KB/T331AVP are 3.3V-only high speed 33,554,432-bit CMOS boot block FLASH Memories with alternating BGO(Back Ground Operation) feature. The BGO


    Original     		M5M29KB/T331AVP 432-BIT 304-WORD 152-WORD 16-BIT) M5M29KB/T331AVP 432-bit REJ03C0169 WD04 24Blocks PDF

    Untitled

    Abstract: No abstract text available
    Text: Renesas LSIs M5M29KB/T331AVP 33,554,432-BIT 4,194,304-WORD BY 8-BIT /2,097,152-WORD BY 16-BIT CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY DESCRIPTION The M5M29KB/T331AVP are 3.3V-only high speed 33,554,432-bit CMOS boot block FLASH Memories with alternating BGO(Back Ground Operation) feature. The BGO


    Original     		M5M29KB/T331AVP 432-BIT 304-WORD 152-WORD 16-BIT) M5M29KB/T331AVP 432-bit REJ03C0169 PDF

    Untitled

    Abstract: No abstract text available
    Text: ADVANCED INFORMATION MX29LW320T/B 32M-BIT [4M x 8 / 2M x 16] ONLY CMOS SINGLE VOLTAGE PAGEMODE FLASH EEPROM FEATURES • • • • • • Supply voltage range: 2.7V to 3.6V 2M word x 16 Bit /4M Byte x 8 Bit switchable Fast access time: 70/80/90ns 20mA maximum active current


    Original     		MX29LW320T/B 32M-BIT 70/80/90ns Programmi320T/BXAI MX29LW320T/BIAI PM0775 PDF

    mx29lw321

    Abstract: No abstract text available
    Text: ADVANCED INFORMATION MX29LW321T/B 32M-BIT [4M x 8 / 2M x 16] ONLY CMOS SINGLE VOLTAGE PAGEMODE FLASH EEPROM FEATURES • • • • • • Supply voltage range: 2.7V to 3.6V 2M word x 16 Bit /4M Byte x 8 Bit switchable Fast access time: 70/80/90ns 20mA maximum active current


    Original     		MX29LW321T/B 32M-BIT 70/80/90ns word/256 APR/01/2002 JUN/04/2002 PM0851 mx29lw321 PDF

    52-pin TSOP

    Abstract: No abstract text available
    Text: Renesas LSIs Preliminary M5M29KB/T331ATP Notice: This is not a final specification. Some parametric limits are subject to change. 33,554,432-BIT 4,194,304-WORD BY 8-BIT /2,097,152-WORD BY 16-BIT CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY DESCRIPTION M5M29KB/T331ATP provides for Software Lock Release function.


    Original     		M5M29KB/T331ATP 432-BIT 304-WORD 152-WORD 16-BIT) M5M29KB/T331ATP 432-bit REJ03C0235 52-pin TSOP PDF

    sa102 equivalent

    Abstract: transistor marking A21 4kw marking MB84VD23381HJ-70 MBVD23381HJ-70
    Text: TM SPANSION MCP Data Sheet September 2003 TM This document specifies SPANSION memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification,


    Original     		F0402 sa102 equivalent transistor marking A21 4kw marking MB84VD23381HJ-70 MBVD23381HJ-70 PDF

    Untitled

    Abstract: No abstract text available
    Text: TM SPANSION MCP Data Sheet September 2003 TM This document specifies SPANSION memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification,


    Original     		F0406 PDF

    transistor sr61

    Abstract: BA107 transistor BA29 BA27 chip transistor BA106 BA99 SAMSUNG MCP A21-A7 transistor ba31 ba30 transistor
    Text: K5T6432YT B M MCP MEMORY Document Title Multi-Chip Package MEMORY 64M Bit (4Mx16) Four Bank NOR Flash Memory / 32M Bit (2Mx16) UtRAM Revision History Revision No. History 1.0 Draft Date Final Specification Remark November 27, 2001 Final The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and


    Original     		K5T6432YT 4Mx16) 2Mx16) 81-Ball 80x11 transistor sr61 BA107 transistor BA29 BA27 chip transistor BA106 BA99 SAMSUNG MCP A21-A7 transistor ba31 ba30 transistor PDF

    BA100 diode

    Abstract: BA102 ba107 Samsung MCP BA125 Diode diode ba102 BA134 BA100 BA106
    Text: Advance Information MCP MEMORY K5C6481NT B M Document Title Multi-Chip Package MEMORY 64M Bit (4Mx16) Dual Bank NOR Flash Memory / 8M(512Kx16) Full CMOS SRAM Revision History Revision No. History 0.0 Advance Information Draft Date Remark Sep. 7, 2001 Advance


    Original     		K5C6481NT 4Mx16) 512Kx16) 512Kx10 81-Ball 80x11 BA100 diode BA102 ba107 Samsung MCP BA125 Diode diode ba102 BA134 BA100 BA106 PDF

    40531

    Abstract: No abstract text available
    Text: DWG NO. SH REV R C - 4 9 5 - 5 1 0 0 -5 0 0 DESCRIPTION 25390 NEW RELEASE TO PRODUCTION 8/11/9B ADDED DATUMS AND POS TOL 03/08/99 30404 COMPLETE RECONFIGURE: SEE SCR 3/24/00 32005 ADDED NOTE 7, SEE SCR 9/18/00 33150 ADDED NOTE 8 1 2/01 40531 ADDED TABLE 5


    OCR Scan     		8/11/9B KLEC--66RSRR VER01 MSTL-68QMT4 VER02 VER01 40531 PDF

    Untitled

    Abstract: No abstract text available
    Text: DWG NO. SH C -4 9 5 -5 1 0 0 -5 0 0 REV ZO N E C.MURPHY 26874 ADDED DATUMS AND POS TOL R.C 0 3 /0 8 /9 9 K.LEBLANC 30404 COMPLETE RECONFIGURE: SEE SCR LL 3 /2 4 / 0 0 K.LEBLANC 32005 ADDED NOTE 7, SEE SCR SG 9 /1 8 / 0 0 K.LEBLANC 33150 ADDED NOTE 8 SG 1/2 /0 1


    OCR Scan     		KLEC-66RSRR VER01 STL-68Q PDF

    Untitled

    Abstract: No abstract text available
    Text: DWG NO. REV SH C— 496— 5000— 500 ZONE BY 25398 26874 NEW RELEASE TO PRODUCTION 28303 ORACLE MATCH 08/03/99 30404 COMPLETE RECONFIGURE; SEE SCR ADDED NOTE 7. SE E SCR 33149 ADDED NOTE 7, SE E SCR 1/2/01 41476 ADDED VHDM L -SE R IE S 3/26/03 CORRECTED DET V SHT. 3


    OCR Scan     		KLEC-66RSTD VER01 dCHU--6KQP95 VER03 C--496--5000--500 PDF

    IH-035

    Abstract: marking 702x
    Text: DWG NO. SH R EV U NEW RELEASE TO PRODUCTION JG C— 496— 5 000— 500 SCR NO. 25398 26874 ADDED DATUMS AND POS TOL 28303 ORACLE MATCH 30404 COMPLETE RECONFIGURE; SEE SCR ADDED NOTE 7. SEE SCR 1/2/01 ADDED VHDM L-SE R IES 3/26/03 CORRECTED DET V SHT. 3 MODIFIED TITLE BLOCK


    OCR Scan     		l2i25l KLEC-66RSTD VER01 dCHU--6KQP95 VER02 IH-035 marking 702x PDF

    NX-XX

    Abstract: No abstract text available
    Text: DWG NO. C-498-5100-500 REV SH T DATE 25397 26874 NEW RELEASE TO PRODUCTION 30404 COMPLETE RECONFIGURE; SEE SCR ADDED NOTE 7, SEE SCR 1 02/01 34312 ADDED -1 0 X ROUND PIN 3/22/01 / MODIFIED TABLE 3 12/19/02 ADDED V 01/14/03 SERIES JSG D. MANTERI 04/25/03 REVISE DATUMS, ADD PART REV


    OCR Scan     		C-498-5100-500 KLEC-63ZR3G VER02 68QMT4 VER01 VER02 NX-XX PDF

    Untitled

    Abstract: No abstract text available
    Text: □pìriE 32 Megabit CMOS Flash EEPROM Dense-Pac Microsystems, Inc DPZ2MS16P/DPZ2MS16XP DESCRIPTION: The DPZ2M S16P/XP is a 32 megabit CM OS FLASH Electrically Erasable and Programmable nonvolatile memory module. The module is built with sixteen 256K x 8 FLASH memory devices


    OCR Scan     		DPZ2MS16P/DPZ2MS16XP S16P/XP 2048K 4096K S16XP) S16XP DPZ2MS16XP 30A052-00 PDF

    Untitled

    Abstract: No abstract text available
    Text: Ordering number : EN Sí5341 CMOS LSI No. LC322260J, T-70/80 5341 SA%YO 2 MEG 131072 words x 16 bits DRAM Fast Page Mode, Byte Read/Write Preliminary Overview Package Dimensions The LC322260J, T are CMOS dynamic RAMs operating on a single 5 V power source and having a 131072 words x


    OCR Scan     		LC322260J, T-70/80 40-pin 44-pin 7W07b 0017bb7 PDF

    Untitled

    Abstract: No abstract text available
    Text: Bulletin 12070/B bitemational S Rectifier SD600N/R SERIES STANDARD RECOVERY DIODES Stud Version Features W ide current range High voltage ratings up to 3200V High surge current ca p a bilitie s Stud cathode and stud anode version S tandard JEDEC types Typical Applications


    OCR Scan     		12070/B SD600N/R D-105 D-106 PDF

    Am91L24

    Abstract: 2114 static ram memory 2114L 91l24 memory ic 2114 pin out ram 2114L 2114L RAM 91L14 2114 1k x 16 RAM 4096N
    Text: IMPROVED PERFORMANCE WITH THE Am9124 By Alex Shevekov, Paul Liu and Joe Kroeger INTRODUCTION off the top of the chart with a value of about .28mW/bit. Note that the Am91L02C, 2114, 2114L, Am9114C, and Am91L14C are straight lines; their dissipation does not depend on the state of


    OCR Scan     		Am9124 Am9124 4096-bit 18-pin Am9114, Am9124. MOS-370 Am91L24 2114 static ram memory 2114L 91l24 memory ic 2114 pin out ram 2114L 2114L RAM 91L14 2114 1k x 16 RAM 4096N PDF