Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    THUNDERBOLT HS IGBT Search Results

    THUNDERBOLT HS IGBT Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    GT30J110SRA Toshiba Electronic Devices & Storage Corporation IGBT, 1100 V, 60 A, Built-in Diodes, TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation
    TLP5702H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5705H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    THUNDERBOLT HS IGBT Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: APT50GS60BR G APT50GS60SR(G) 600V, 50A, VCE(ON) = 2.8V Typical Thunderbolt High Speed NPT IGBT The Thunderbolt HS series is based on thin wafer non-punch through (NPT) technology similar to the Thunderbolt® series, but trades higher VCE(ON) for signi cantly lower turn-on energy Eoff. The low


    Original     		PDF APT50GS60BR APT50GS60SR 100kHz, O-247

    inverter 12v to 220 ac mosfet based

    Abstract: No abstract text available
    Text: APT30GS60KR G 600V, 30A, VCE(ON) = 2.8V Typical Thunderbolt High Speed NPT IGBT The Thunderbolt HS series is based on thin wafer non-punch through (NPT) technology similar to the Thunderbolt® series, but trades higher VCE(ON) for signi cantly lower turn-on energy Eoff. The low


    Original     		PDF APT30GS60KR 100kHz, JESD24-1. O-220 inverter 12v to 220 ac mosfet based

    Untitled

    Abstract: No abstract text available
    Text: APT20GS60KR G 600V, 30A, VCE(ON) = 2.8V Typical Thunderbolt High Speed NPT IGBT The Thunderbolt HS series is based on thin wafer non-punch through (NPT) technology similar to the Thunderbolt® series, but trades higher VCE(ON) for signi cantly lower turn-on energy Eoff. The low


    Original     		PDF APT20GS60KR 100kHz, JESD24-1. O-220

    600v 20a IGBT driver

    Abstract: APT20GS60KR MIC4452 motor driver full bridge 20A
    Text: APT20GS60KR G 600V, 30A, VCE(ON) = 2.8V Typical Thunderbolt High Speed NPT IGBT The Thunderbolt HS series is based on thin wafer non-punch through (NPT) technology similar to the Thunderbolt® series, but trades higher VCE(ON) for significantly lower turn-on energy Eoff. The low


    Original     		PDF APT20GS60KR 100kHz, JESD24-1. O-220 600v 20a IGBT driver MIC4452 motor driver full bridge 20A

    IGBT 400V 100KHZ 30A

    Abstract: MIC4452
    Text: APT30GS60KR G 600V, 30A, VCE(ON) = 2.8V Typical Thunderbolt High Speed NPT IGBT The Thunderbolt HS series is based on thin wafer non-punch through (NPT) technology similar to the Thunderbolt® series, but trades higher VCE(ON) for significantly lower turn-on energy Eoff. The low


    Original     		PDF APT30GS60KR 100kHz, JESD24-1. O-220 IGBT 400V 100KHZ 30A MIC4452

    make full-bridge SMPS

    Abstract: Thunderbolt Thunderbolt IGBT MIC4452 MOSFET welding INVERTER
    Text: APT50GS60BR G APT50GS60SR(G) 600V, 50A, VCE(ON) = 2.8V Typical Thunderbolt High Speed NPT IGBT The Thunderbolt HS series is based on thin wafer non-punch through (NPT) technology similar to the Thunderbolt® series, but trades higher VCE(ON) for significantly lower turn-on energy Eoff. The low


    Original     		PDF APT50GS60BR APT50GS60SR 100kHz, O-247 make full-bridge SMPS Thunderbolt Thunderbolt IGBT MIC4452 MOSFET welding INVERTER

    Diode 400V 20A

    Abstract: igbt 400V 20A MOSFET welding INVERTER 200A MIC4452 power Diode 400V 20A
    Text: APT20GS60BRDQ1 G APT20GS60SRDQ1(G) 600V, 20A, VCE(ON) = 2.8V Typical Thunderbolt High Speed NPT IGBT with Anti-Parallel 'DQ' Diode The Thunderbolt HS series is based on thin wafer non-punch through (NPT) technology similar to the Thunderbolt® series, but trades higher VCE(ON) for significantly lower turn-on energy Eoff. The low


    Original     		PDF APT20GS60BRDQ1 APT20GS60SRDQ1 100kHz, Diode 400V 20A igbt 400V 20A MOSFET welding INVERTER 200A MIC4452 power Diode 400V 20A

    mosfet 600V 30A

    Abstract: IGBT 400V 100KHZ 30A APT30GS60BRDQ2 MIC4452 MOSFET 40A 600V
    Text: APT30GS60BRDQ2 G APT30GS60SRDQ2(G) 600V, 30A, VCE(ON) = 2.8V Typical Thunderbolt High Speed NPT IGBT with Anti-Parallel 'DQ' Diode The Thunderbolt HS series is based on thin wafer non-punch through (NPT) technology similar to the Thunderbolt® series, but trades higher VCE(ON) for significantly lower turn-on energy Eoff. The low


    Original     		PDF APT30GS60BRDQ2 APT30GS60SRDQ2 100kHz, mosfet 600V 30A IGBT 400V 100KHZ 30A MIC4452 MOSFET 40A 600V

    Untitled

    Abstract: No abstract text available
    Text: APT30GS60BRDQ2 G APT30GS60SRDQ2(G) 600V, 30A, VCE(ON) = 2.8V Typical Thunderbolt High Speed NPT IGBT with Anti-Parallel 'DQ' Diode The Thunderbolt HS series is based on thin wafer non-punch through (NPT) technology similar to the Thunderbolt® series, but trades higher VCE(ON) for significantly lower turn-on energy Eoff. The low


    Original     		PDF APT30GS60BRDQ2 APT30GS60SRDQ2 100kHz, circuit016)

    MOSFET welding INVERTER 200A

    Abstract: H bridge 300v 30a jc5010
    Text: APT20GS60BRDQ1 G APT20GS60SRDQ1(G) 600V, 20A, VCE(ON) = 2.8V Typical Thunderbolt High Speed NPT IGBT with Anti-Parallel 'DQ' Diode The Thunderbolt HS series is based on thin wafer non-punch through (NPT) technology similar to the Thunderbolt® series, but trades higher VCE(ON) for significantly lower turn-on energy Eoff. The low


    Original     		PDF APT20GS60BRDQ1 APT20GS60SRDQ1 100kHz, MOSFET welding INVERTER 200A H bridge 300v 30a jc5010

    welding inverter 200A

    Abstract: MOSFET welding INVERTER 200A Thunderbolt MIC4452 MOSFET welding INVERTER APT50GS60BRDQ2
    Text: APT50GS60BRDQ2 G APT50GS60SRDQ2(G) 600V, 50A, VCE(ON) = 2.8V Typical Thunderbolt High Speed NPT IGBT with Anti-Parallel 'DQ' Diode The Thunderbolt HS series is based on thin wafer non-punch through (NPT) technology similar to the Thunderbolt® series, but trades higher VCE(ON) for significantly lower turn-on energy Eoff. The low


    Original     		PDF APT50GS60BRDQ2 APT50GS60SRDQ2 100kHz, welding inverter 200A MOSFET welding INVERTER 200A Thunderbolt MIC4452 MOSFET welding INVERTER

    welding inverter 100A WITH PFC

    Abstract: MOSFET welding INVERTER 200A igbt full h bridge 25A apt50gs60brdq2g 600V50A
    Text: APT50GS60BRDQ2 G APT50GS60SRDQ2(G) 600V, 50A, VCE(ON) = 2.8V Typical Thunderbolt High Speed NPT IGBT with Anti-Parallel 'DQ' Diode The Thunderbolt HS series is based on thin wafer non-punch through (NPT) technology similar to the Thunderbolt® series, but trades higher VCE(ON) for significantly lower turn-on energy Eoff. The low


    Original     		PDF APT50GS60BRDQ2 APT50GS60SRDQ2 100kHz, welding inverter 100A WITH PFC MOSFET welding INVERTER 200A igbt full h bridge 25A apt50gs60brdq2g 600V50A

    Untitled

    Abstract: No abstract text available
    Text: APT20GS60BRDQ1 G APT20GS60SRDQ1(G) 600V, 20A, VCE(ON) = 2.8V Typical Thunderbolt High Speed NPT IGBT with Anti-Parallel 'DQ' Diode The Thunderbolt HS series is based on thin wafer non-punch through (NPT) technology similar to the Thunderbolt® series, but trades higher VCE(ON) for significantly lower turn-on energy Eoff. The low


    Original     		PDF APT20GS60BRDQ1 APT20GS60SRDQ1 100kHz,

    Untitled

    Abstract: No abstract text available
    Text: APT30GS60BRDQ2 G APT30GS60SRDQ2(G) 600V, 30A, VCE(ON) = 2.8V Typical Thunderbolt High Speed NPT IGBT with Anti-Parallel 'DQ' Diode The Thunderbolt HS series is based on thin wafer non-punch through (NPT) technology similar to the Thunderbolt® series, but trades higher VCE(ON) for significantly lower turn-on energy Eoff. The low


    Original     		PDF APT30GS60BRDQ2 APT30GS60SRDQ2 100kHz,

    Untitled

    Abstract: No abstract text available
    Text: APT30GS60BRDL G 600V, 30A, VCE(ON) = 2.8V Typical Resonant Mode Combi IGBT TO The Thunderbolt HS IGBT used in this resonant mode combi is based on thin wafer non-punch through (NPT) technology similar to the Thunderbolt® series, but trades higher VCE(ON) for significantly lower


    Original     		PDF APT30GS60BRDL 100kHz, O-247

    Untitled

    Abstract: No abstract text available
    Text: APT30GS60BRDL G 600V, 30A, VCE(ON) = 2.8V Typical Resonant Mode Combi IGBT TO The Thunderbolt HS IGBT used in this resonant mode combi is based on thin wafer non-punch through (NPT) technology similar to the Thunderbolt® series, but trades higher VCE(ON) for significantly lower


    Original     		PDF APT30GS60BRDL 100kHz,

    MOSFET welding INVERTER 200A

    Abstract: Mosfet 30A 300V APT30GS60BRDL MIC4452 single phase igbt based WELDING inverter 200 amps SILICON CARBIDE POWER SCHOTTKY DIODE 600V 30A
    Text: APT30GS60BRDL G 600V, 30A, VCE(ON) = 2.8V Typical Resonant Mode Combi IGBT TO The Thunderbolt HS IGBT used in this resonant mode combi is based on thin wafer non-punch through (NPT) technology similar to the Thunderbolt® series, but trades higher VCE(ON) for significantly lower


    Original     		PDF APT30GS60BRDL 100kHz, MOSFET welding INVERTER 200A Mosfet 30A 300V MIC4452 single phase igbt based WELDING inverter 200 amps SILICON CARBIDE POWER SCHOTTKY DIODE 600V 30A

    Untitled

    Abstract: No abstract text available
    Text: APT30GS60BRDL G 600V, 30A, VCE(ON) = 2.8V Typical Resonant Mode Combi IGBT TO The Thunderbolt HS IGBT used in this resonant mode combi is based on thin wafer non-punch through (NPT) technology similar to the Thunderbolt® series, but trades higher VCE(ON) for significantly lower


    Original     		PDF APT30GS60BRDL 100kHz, O-247

    Untitled

    Abstract: No abstract text available
    Text: APT50GS60BRDL G 600V, 50A, VCE(ON) = 2.8V Typical *G Denotes RoHS Compliant, Pb Free Terminal Finish. Resonant Mode Combi IGBT TO The Thunderbolt HS IGBT used in this resonant mode combi is based on thin wafer non-punch through (NPT) technology similar to the Thunderbolt® series, but trades higher VCE(ON) for significantly lower


    Original     		PDF APT50GS60BRDL 100kHz,

    Untitled

    Abstract: No abstract text available
    Text: APT50GS60BRDL G 600V, 50A, VCE(ON) = 2.8V Typical *G Denotes RoHS Compliant, Pb Free Terminal Finish. Resonant Mode Combi IGBT TO The Thunderbolt HS IGBT used in this resonant mode combi is based on thin wafer non-punch through (NPT) technology similar to the Thunderbolt® series, but trades higher VCE(ON) for significantly lower


    Original     		PDF APT50GS60BRDL 100kHz, O-247

    single phase igbt based WELDING inverter 200 amps

    Abstract: MOSFET welding INVERTER 200A MIC4452 600V-50A 600V50A SMPS 30v apt50gs60
    Text: APT50GS60BRDL G 600V, 50A, VCE(ON) = 2.8V Typical *G Denotes RoHS Compliant, Pb Free Terminal Finish. Resonant Mode Combi IGBT TO The Thunderbolt HS IGBT used in this resonant mode combi is based on thin wafer non-punch through (NPT) technology similar to the Thunderbolt® series, but trades higher VCE(ON) for significantly lower


    Original     		PDF APT50GS60BRDL 100kHz, single phase igbt based WELDING inverter 200 amps MOSFET welding INVERTER 200A MIC4452 600V-50A 600V50A SMPS 30v apt50gs60

    Untitled

    Abstract: No abstract text available
    Text: APT50GS60BRDL G 600V, 50A, VCE(ON) = 2.8V Typical *G Denotes RoHS Compliant, Pb Free Terminal Finish. Resonant Mode Combi IGBT TO The Thunderbolt HS IGBT used in this resonant mode combi is based on thin wafer non-punch through (NPT) technology similar to the Thunderbolt® series, but trades higher VCE(ON) for significantly lower


    Original     		PDF APT50GS60BRDL 100kHz, O-247

    single phase inverter IGBT

    Abstract: wind inverter Thunderbolt buck 800v igbt single phase inverter mosfet single phase full bridge inverter mosfet power inverter 500w single phase inverter SiC IGBT High Power Modules APT50GT60BRDQ2G
    Text: Product Solutions for Inverters in Distributed Power Markets Solar, Wind, UPS 1 Power Semiconductors for Inverters Your Inverter Requirements… Our Business • Comprehensive range of power semiconductor products to meet the needs of 500W to 500kW inverters


    Original     		PDF 500kW APT60N60BCSG 00E-07 00E-06 50E-06 single phase inverter IGBT wind inverter Thunderbolt buck 800v igbt single phase inverter mosfet single phase full bridge inverter mosfet power inverter 500w single phase inverter SiC IGBT High Power Modules APT50GT60BRDQ2G

    SOT-227 lead frame

    Abstract: 5kw smps full bridge S.M.P.S PLAD15KP APT10026L2FLLG 5kw SMPS full bridge Fast Recovery Rectifiers mx gp 043 SMBx6.0A DO215AA PFC 1.5kw 1.5ke series
    Text: Power Matters High Reliability Up-Screened Plastic Products Portfolio TRANSIENT VOLTAGE SUPPRESSORS MOSFETs IGBTs RECTIFIERS About Microsemi’s High-Reliability Screened Devices Standard commercial grade semiconductor testing may not detect some types of problems such as cracked die or ionic


    Original     		PDF MIL-PRF-19500, sO-268 O-220 O-220 O-247 O-264 OT-227 SOT-227 lead frame 5kw smps full bridge S.M.P.S PLAD15KP APT10026L2FLLG 5kw SMPS full bridge Fast Recovery Rectifiers mx gp 043 SMBx6.0A DO215AA PFC 1.5kw 1.5ke series