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    National Semiconductor Corporation TN4314

    Bipolar Junction Transistor, PNP Type, TO-237
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    TN4314 Datasheets (8)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    TN4314 Continental Device India TO-237 Plastic Package Transistors Scan PDF
    TN4314 Continental Device India Semiconductor Device Data Book 1996 Scan PDF
    TN4314 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    TN4314 National Semiconductor PNP Medium Power Transistors Scan PDF
    TN4314 National Semiconductor Medium Power Transistors Scan PDF
    TN4314 National Semiconductor PNP Transistors Scan PDF
    TN4314 National Semiconductor Medium Power Transistors Scan PDF
    TN4314 National Semiconductor Shortform National Semiconductor Datasheet Short Form PDF

    TN4314 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    b0416

    Abstract: TO-202AC
    Text: POWER SILICON PNP Item Number Part Number I C 5 10 15 20 25 30 >= 40 ~~~;:~ 2SB1044M 2SB1044M 2SB731 2SB734 2SBll15 2SBl115 BFX38 2N3779 ~~~~gA BOT30A BOT30A TIP30A 2N4899 2N3775 2SA547 TN4235 2N4235 2N3740A BFS92 BSP31 TN4030 2SB954 B0240A BCP52 BCX52 ~g~~~A


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    PDF 2SA1460 2SA1463 BCX51-10 BCX51-16 ZTX550 TN3468 TN5022 TN3245 2N3245 2SB1044M b0416 TO-202AC

    TN4037

    Abstract: TN4036 TN4234 TN4235 TN4236 TN4314 TN636 TN638
    Text: Electrical C h aracte ristics Ta=25°C, U n le ss O therw ise Specified M axim um R a tin g s Type No. TN4036 TN4037 TN4234 TN4235 TN4236 TN4314 Min Min Min Pd (W) eïc=25°c 90 65 7 0.75 ^œo ^CEO ^EBO (V) (V) (V) 60 40 60 • 80 90 40 40 60 80 7 7 7 7


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    PDF TN4036 O-237-2 TN4037 TN4234 TN4235 TN4236 TN4314 TN636 TN638

    Untitled

    Abstract: No abstract text available
    Text: TO-237 PLASTIC PACKAGE TRANSISTORS NPN M a x im u m R a tin g s Type No. TN4036 TN4037 TN4234 TN4235 TN4236 TN4314 E le c tric a l C h a ra c te r is tic s (Ta=25°C, U n le s s O th e rw ise S p ecified ) V CBO ^CEO ^EBO 'c m 'cBO ^CB (V) Min (V) Min PD


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    PDF O-237 TN4036 TN4234 TN4235 TN4236 TN4314 TN636 TN638 TN640

    T1P42C

    Abstract: No abstract text available
    Text: TO-220 PIN CONFIGURATION 1. BASE 2 . COLLECTOR 3. EMITTER 4. COLLECTOR c DIM E ,01 0 -I A B C D E F G H J K L M N 3 G MIN MAX 14,42 9,63 3,56 16.51 10,67 4,83 0,90 1,40 3,88 2,79 3,43 0,56 14,73 6,35 2,92 - 1,15 3,75 2,29 2,54 12,70 - 2,03 - 7 31,24 DEG TO-220 Power Package Transistors NPN


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    PDF O-220 O-220 O-237-2 00014QÃ T1P42C

    ksd113

    Abstract: NSDU57 NSD6181 2N4355 2N4354 2N6726 2N6727 MPSA92 151a100 MPSW92
    Text: PNP Transistors V cbo V Min v CEO (V) Min Vebo (V) Min 2N4030 TO-39 60 60 5 2N4031 TO-39 80 60 80 60 5 5 50 50 50 50 60 50 TO-39 80 80 5 50 60 also Avail. JA N /T X /V Versions 2N4036 TO-39 90 85 TO-39 60 40 2N4314 TO-39 90 65 7 20 60 10 25 40 30 40 70 100


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    PDF bS01130 D0B70fll NSD206 O-202 NSDU56 NSDU57 ksd113 NSD6181 2N4355 2N4354 2N6726 2N6727 MPSA92 151a100 MPSW92

    G25CW

    Abstract: CIL10
    Text: cm tq^ pljwsic cr*oc Maxinlum Rfitings Type No. Electrical Characteristics Ta=25”C, Unless Otherwise Specified wCE(SAT) vv BE|S«T) a 'c c* 'c (V) S (V) 0 (mA) (pF) (MHz) (mA) Max Min Max Typ Max Min Typ Max KoH) (ns) Max COIl Case Style 'c ^ceo V EBO


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    PDF 2N6708 O-237-2 O-237-2 TN4235 TN4236 TN4314 G25CW CIL10

    2N6706

    Abstract: 2n6730 tn2905 CSC1573 MPSW13 2N6705 2N6707 2N6711 cil916 2N6713
    Text: TO-237 DIM A B C D E F G H K L MIN 4,32 4,45 3,18 0,41 0,35 1,14 12,70 5.DEG MAX 5,33 5,20 4,19 0,55 0,50 0,55 1,40 2,54 - A L L DIM EN SIO N S A R E IN M.M. L L PIN CONFIGURATION AVAILABLE IN TO-237 CDIL Code Style 3 TO-237 PIN 1 PIN 2 PIN 3 Emitter Base


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    PDF O-237 O-237 O-237-1 O-237-2 TN4037 O-237-2 TN4234 2N6706 2n6730 tn2905 CSC1573 MPSW13 2N6705 2N6707 2N6711 cil916 2N6713

    NSDU51

    Abstract: D43C8 NSD6181 0410 2N4234 2N6726 2N6727 92PU51 92PU51A D41D1
    Text: NATL SEMICOND DISCRETE S5E D • bSG113Q 0G377fl7 5 ■ T '21-0t PNP Medium Power Transistors by Ascending Vceo Part No. Vceo \»l Max (mA/V) V « (sat) (V) Max 150 300 10/1 100/1 100/2 100/2 1A/1 500/1 0.5 0.5 0.5 0.5 0.7 0.7 1000 1A 500 500 1000 1000 TO-237


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    PDF 0G377fl7 T-21-0t 2N6726 O-237 92PU51 D41D1 O-202 D41D2 NSDU51 D43C8 NSD6181 0410 2N4234 2N6727 92PU51A

    y51 h 120c

    Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
    Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK


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    PDF 500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711

    D43C8

    Abstract: nsd6181 NSDU51
    Text: NATL SEflICOND DISCRETE E2E D • bS D113Q 0037767 5 ■ T-27-0/ PNP Medium Power Transistors by Ascending Vce0 Part No. Max (m A /V) Vce (sat) (V) Max 150 300 10/1 100/1 100/2 100/2 1A/1 500/1 0.5 0.5 0.5 0.5 0.7 0.7 1000 1A 500 500 1000 1000 TO-237 TO-237


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    PDF D113Q T-27-0/ 2N6726 92PU51 D41D1 D41D2 NSDU51 TN5023 2N4234 2N6727 D43C8 nsd6181

    92PU51A

    Abstract: 2N671 ksd113 0410 2N4355 transistor 2N4033 2N4031 2N4033 2N4037 2N4356
    Text: This PNP Transistors 2N4030 TO-39 60 VCEO VEBO V (V) Min Min 60 5 •ces * ICBO@VcB (nA) (V) Max 50 50 By Its 2N4031 TO-39 TO-39 2N4Û36 TO-39 60 80 90 80 60 80 85 TO-39 60 40 2N4314 TO-39 90 65 5 5 7 7 50 50 50 20 60 50 60 60 10 25 40 30 40 70 100 75 25


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    PDF 2n4030 to-39 2N4031 2n4032 2N4033 T-31-01 92PU51A 2N671 ksd113 0410 2N4355 transistor 2N4033 2N4037 2N4356