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    TO-1 AMPS PNP TRANSISTOR Search Results

    TO-1 AMPS PNP TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TO-1 AMPS PNP TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    LB1200

    Abstract: T092 ZTX953 LB120
    Text: PNP SILICON PLANAR MEDIUM POWER I HIGH CURRENT TRANSISTOR CorltinUOUs “ LJp to 10 Amps * Very * Excellent * Spice I ZTX953 1 ISSUE 4- JUNE 94 FEATIJRES + ~fj A~ps I ~ current /’ q peak current low saturation voltage gain up to 10 Amps moclel available


    Original     		PDF ZTX953 LB1200 T092 ZTX953 LB120

    BTP955L3

    Abstract: No abstract text available
    Text: Spec. No. : C607L3 Issued Date : 2005.02.04 Revised Date : 2006.06.23 Page No. : 1/5 CYStech Electronics Corp. PNP Epitaxial Planar High Current High Performance Transistor BTP955L3 Features • 4 Amps continuous current, up to 10 Amps peak current • Very low saturation voltage


    Original     		PDF C607L3 BTP955L3 OT-223 UL94V-0 BTP955L3

    Untitled

    Abstract: No abstract text available
    Text: Spec. No. : C607J3-A Issued Date : 2006.06.07 Revised Date : Page No. : 1/5 CYStech Electronics Corp. PNP Epitaxial Planar High Current High Performance Transistor BTP955J3 Features • 4 Amps continuous current, up to 10 Amps peak current • Very low saturation voltage


    Original     		PDF C607J3-A BTP955J3 O-252 UL94V-0

    CYStech Electronics

    Abstract: sot-223 code marking BTP953L3
    Text: Spec. No. : C657L3 Issued Date : 2005.01.07 Revised Date : 2005.03.04 Page No. : 1/6 CYStech Electronics Corp. PNP Epitaxial Planar High Current High Performance Transistor BTP953L3 Features • 5 Amps continuous current, up to 10 Amps peak current • Very low saturation voltage


    Original     		PDF C657L3 BTP953L3 OT-223 UL94V-0 CYStech Electronics sot-223 code marking BTP953L3

    BTP955L3

    Abstract: No abstract text available
    Text: Spec. No. : C606L3 Issued Date : 2005.02.04 Revised Date : 2005.03.04 Page No. : 1/6 CYStech Electronics Corp. PNP Epitaxial Planar High Current High Performance Transistor BTP955L3 Features • 4 Amps continuous current, up to 10 Amps peak current • Very low saturation voltage


    Original     		PDF C606L3 BTP955L3 OT-223 UL94V-0 BTP955L3

    B1216

    Abstract: No abstract text available
    Text: Spec. No. : C811J3 Issued Date : 2008.12.10 Revised Date : 2009.02.04 Page No. : 1/7 CYStech Electronics Corp. PNP Epitaxial Planar High Current High Performance Transistor BTB1216J3 BVCEO IC RCE(SAT) -140V -4A 90mΩ typ. Features • 4 Amps continuous current, up to 10 Amps peak current


    Original     		PDF C811J3 BTB1216J3 -140V O-252 UL94V-0 B1216

    FZT857

    Abstract: FZT957 FZT958 DSA003675
    Text: SOT223 PNP SILICON PLANAR HIGH CURRENT HIGH PERFORMANCE TRANSISTORS FZT957 FZT958 ISSUE 3 - JANUARY 1996 FEATURES * 1 Amp continuous current * Up to 2 Amps peak current * Very low saturation voltage * Excellent gain characteristics specified up to 1 Amp


    Original     		PDF OT223 FZT957 FZT958 FZT957 FZT857 FZT958 -100mA, 50MHz FZT857 DSA003675

    A1KA

    Abstract: No abstract text available
    Text: SOT223 PNP SILICON PLANAR HIGH CURRENT HIGH PERFORMANCE TRANSISTORS FZT957 FZT958 ISSUE 3 - JANUARY 1996 FEATURES * 1 Amp continuous current * Up to 2 Amps peak current * Very low saturation voltage * Excellent gain characteristics specified up to 1 Amp


    Original     		PDF OT223 FZT957 FZT958 FZT957 FZT857 FZT958 100ms A1KA

    NSL12AW

    Abstract: NSL12AWT1 NSL12AWT1G
    Text: NSL12AW High Current Surface Mount PNP Silicon Low VCE sat Transistor for Battery Operated Applications http://onsemi.com Features • • • • • 12 VOLTS 3.0 AMPS PNP TRANSISTOR High Current Capability (3 A) High Power Handling (Up to 650 mW) Low VCE(s) (170 mV Typical @ 1 A)


    Original     		PDF NSL12AW NSL12AW/D NSL12AW NSL12AWT1 NSL12AWT1G

    Untitled

    Abstract: No abstract text available
    Text: CZT32C SOT-223 Transistor PNP SOT-223 1. BASE 2. COLLECTOR 1 3. EMITTER Features — Complementary to CZT31C — Power amplifier applications up to 3.0 amps. Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter


    Original     		PDF CZT32C OT-223 OT-223 CZT31C -375mA -500mA -30mA -100V

    FZT958

    Abstract: FZT857 FZT957 DSA003719
    Text: SOT223 PNP SILICON PLANAR HIGH CURRENT I ISSUE 3- JANUARY I 1996 FEATURES * FZT957 FZT958 I HIGH PERFORMANCE TRANSISTORS r 1 Amp continuous * Up to 2 Amps * Very * Excelient current c peak current low saturation voltage gain characteristics specified up to 1 Amp


    Original     		PDF OT223 FZT957 FZT958 FZT857 FZT958 FZT857 FZT957 DSA003719

    FCX688B

    Abstract: FCX789A DSA003688
    Text: SOT89 PNP SILICON POWER SWITCHING TRANSISTOR FCX789A ISSSUE 1 -NOVEMBER 1998 FEATURES * 2W POWER DISSIPATION * * * 8A Peak Pulse Current Excellent HFE Characteristics up to 10 Amps Low Saturation Voltage E.g. 10mv Typ. Complimentary Type Partmarking Detail -


    Original     		PDF FCX789A FCX688B 100ms 100us FCX688B FCX789A DSA003688

    CZT31C

    Abstract: CZT32C sot223 transistor
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-223 Plastic-Encapsulate Transistors CZT32C SOT-223 TRANSISTOR PNP FEATURES 1 z Complementary to CZT31C z Power amplifier applications up to 3.0 amps. 1. BASE 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (TA=25℃ unless otherwise noted)


    Original     		PDF OT-223 CZT32C OT-223 CZT31C -30mA -100V -375mA -500mA CZT31C CZT32C sot223 transistor

    Untitled

    Abstract: No abstract text available
    Text: SOT89 PNP SILICON POWER SWITCHING TRANSISTOR FCX789A ISSSUE 1 -NOVEMBER 1998 FEATURES * 2W POWER DISSIPATION * * * 8A Peak Pulse Current Excellent HFE Characteristics up to 10 Amps Low Saturation Voltage E.g. 10mv Typ. Complimentary Type Partmarking Detail -


    Original     		PDF FCX789A FCX688B 100ms 100us

    Untitled

    Abstract: No abstract text available
    Text: PNP SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR ZTX957 ISSUE 3 – JUNE 94 FEATURES * 1 Amp continuous current * Up to 2 Amps peak current * Very low saturation voltage * Excellent gain characteritics up to 1 Amp * Spice model available C B E E-Line


    Original     		PDF ZTX957 100ms

    Untitled

    Abstract: No abstract text available
    Text: Bipolar Darlington Transistors Page 1 of 2 Next Home Package Device Type VCEO sus Volts IC (max) Amps hFE@IC/VCE (min/max @ A/V) VCE(sat)@ IC/IB (V@A/A) COB pF fT MHZ PNP TO-3/204AA 2N6050 60 12 750/18000@6/3 2.0@6/.024 500 4.0 PNP TO-3/204AA 2N6051 * 80


    Original     		PDF 2N6050 2N6051 2N6052 2N6057 2N6058 2N6059 2N6282 2N6283 2N6284 2N6285

    FCX1047A

    Abstract: FCX1147A DSA003683
    Text: SOT89 PNP SILICON POWER SWITCHING TRANSISTOR FCX1147A ISSSUE 1 - DECEMBER 1998 FEATURES * 2W POWER DISSIPATION * * * * 20A Peak Pulse Current Excellent HFE Characteristics up to 20 Amps Extremely Low Saturation Voltage E.g. 25mv Typ. Extremely Low Equivalent On-resistance;


    Original     		PDF FCX1147A FCX1047A Dissipati100 100ms FCX1047A FCX1147A DSA003683

    transistor A7a

    Abstract: 2N3740A 2N3741A 2N4898 2N4899 2N4900 2N5954 2N5955 2N5956 2N6212A
    Text: N EW ENGLAND SEMICONDUCTOR BIPOLAR PNP TRANSISTOR TO-66 sus VOLTS Ic (max) AMPS 1*FE@ I c / V ce DEVICE TYPE 2N3740A 60 1 30-100@.25/l 2N3740A 60 1 2N3741A 80 2N3741A ^CEO PACKAGE PNP TO-66 VcE(s»t) pr D* WATTS (MHz) .6@1/.125 25 4 30-100@.25/l .6@1/.125


    OCR Scan     		PDF 2N3740A 2N3741A 2N4898 2N4899 2N4900 2N5954 2N5955 2N5956 transistor A7a 2N6212A

    2N5415

    Abstract: No abstract text available
    Text: NEW ENGLAND SEMICONDUCTOR BIPOLAR PNP TRANSISTOR TO-39/TO-5 PACKAGE PNP TO-39 PNP TO-5 tr 1 V ceo Ic hFE@ V VcE VcE sat (sus) VOLTS (max) AMPS (min/max @ A/V) @ IC/IB (V @ A/A) 2N3867 40 3 >25@2.5/3 2N3868 60 3 2N4930 200 2N4931 p * rD Ìt WATTS (MHz) 1.3@2.5/.25


    OCR Scan     		PDF O-39/TO-5 2N3867 2N3868 2N4930 2N4931 2N5094 2N5149 2N5153 2N5415

    Transistor 2N5093

    Abstract: 2N5091 7 amps pnp transistor 2N5416A 2N5096 "PNP Transistor" 2N5093 2N5094 2N5149 2N5151
    Text: N EW ENGLAND SEMICONDUCTOR BIPOLAR PNP TRANSISTOR TO-39/TO-5 PACKAGE PNP TO-39 Jff /1 PNP TO-5 Jff Uf V eto sus VOLTS Ic ^FE IC/ VCE DEVICE TYPE (max) (min/max AMPS @ A/V) 2N3867A 40 3 >25@2.5/3 2N3868A 60 3 2N5091 300 2N5093 V CE(sat) @ I c/I b (V @ A/A)


    OCR Scan     		PDF O-39/TO-5 2N3867A 2N3868A 2N5091 2N5093 2N5094 2N5096 2N5149 2N5151 2N5153 Transistor 2N5093 7 amps pnp transistor 2N5416A "PNP Transistor"

    741 IC

    Abstract: 2N5093 741i IC 741 to 2N5415 2N3868 2N4930 2N4931 2N5091 2N5096
    Text: NEW ENGLAND SEMICONDUCTOR BIPOLAR PNP TRANSISTOR TO-39/TO-5 PACKAGE PNP TO-39 PNP TO-5 » I 1 sus VOLTS Ic (max) AMPS 2N3867 40 3 >25@2.5/3 1.3@2.5/.25 6 60 2N3868 60 3 >20@2.5/3 1.3@2.5/.25 6 60 2N4930 200 .05 20-200@.01/10 5@.01/.001 5 10* 2N4931 250 .05


    OCR Scan     		PDF O-39/TO-5 2N3867 2N3868 2N4930 2N4931 2N5091 2N5093 2N5094 2N5096 2N5149 741 IC 741i IC 741 to 2N5415

    Untitled

    Abstract: No abstract text available
    Text: NEW ENGLAND SEMICONDUCTOR BIPOLAR PNP TRANSISTOR TO-66 PACKAGE DEVICE TYPE sus VOLTS Ic (max) AMPS 1*FE@ I C/ V c E PNP TO-66 2N3740A 60 1 30-100@.25/l 2N3740A 60 1 2N3741A 80 2N3741A V cE O V cE (sat) pr D * WATTS (MHz) .6@1/.125 25 4 30-100@.25/l .6@1/.125


    OCR Scan     		PDF 2N3740A 2N3741A 2N4898 2N4899 2N4900 2N5954 2N5955 2N5956

    2N5581A

    Abstract: No abstract text available
    Text: NEW ENGLAND SEMICONDUCTOR SMALL SIGNAL PNP TRANSISTOR TO-46 PACKAGE PNP TO-46 1 I IH hpE @ IC/ Vce min/max @ mA/V VcEO sus VOLTS Ic (max) AMPS 2N2604 45 0.03 60@0.5/5 2N2605 45 0.03 150@0.5/5 2N2944AA 10 0.1 2N2945 20 2N2945AA DEVICE TYPE VcE<sat) @ Ic^B


    OCR Scan     		PDF 2N2604 2N2605 2N2944AA 2N2945 2N2945AA 2N2946 2N2946AA 2N3485 2N3485AA 2N3486 2N5581A

    transistor 206

    Abstract: 2N7370 AN-750 2N6050 2N6051 2N6052 2N6057 2N6058 2N6059 2N6285
    Text: NEW ENGLAND SEMICONDUCTOR BIPOLAR DARLINGTON PNP TRANSISTOR sus VOLTS Ic (max) AMPS 2N6050 60 12 2N6051 80 2N6052 PACKAGE DEVICE TYPE PNP TO-3 TO-204AA flCX TO-254AA V cE O Ic/ V c E min/max @ A/V 1*FE @ ^C E (sat) @ IC/IB V @ A/A C(P P Ît (MHz) 750/18000@6/3


    OCR Scan     		PDF 2N6050 O-204AA 2N6051 2N6052 2N6285 2N6286 2N6287 O-254AA 2N7371 T0-204AA transistor 206 2N7370 AN-750 2N6057 2N6058 2N6059