LM7805K
Abstract: F0513 LM7915 to-3 lm140AH LM7812K F0534 LM7812 TO-39 mil-std-883 F0883 5962-8874601UX
Text: Semelab Device Line Data BS Approval DSCC Approval QPL Approval Package IP109AK-883 - - MIL-STD 883B TO3 TO204AA IP109AK-883B - - MIL-STD 883B TO3 (TO204AA) IP109K-883B - - TO3 (TO204AA) IP109K-8QR-B - - IP109MAH-883B - - MIL-STD 883B Screened to MIL-STD
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IP109AK-883
O204AA)
IP109AK-883B
IP109K-883B
IP109K-8QR-B
IP109MAH-883B
IP109MAH-8QR-B
O205AD)
LM7805K
F0513
LM7915 to-3
lm140AH
LM7812K
F0534
LM7812 TO-39
mil-std-883
F0883
5962-8874601UX
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TA17425
Abstract: AN7254 AN7260 RFM6N45 RFP6N45 RFP6N50 TB334 20KW motor
Text: [ /Title RFM6 N45, RFP6N4 5, RFP6N5 0 /Subject (6A, 450V and 500V, 1.250 Ohm, NChannel Power MOSFETs) /Author () /Keywords (Harris Semiconductor, NChannel Power MOSFETs, TO204AA, TO220AB) /Creator () /DOCIN RFM6N45, RFP6N45, RFP6N50 Semiconductor 6A, 450V and 500V, 1.250 Ohm,
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O204AA,
O220AB)
RFM6N45,
RFP6N45,
RFP6N50
AN7254
AN7260
TA17425
AN7260
RFM6N45
RFP6N45
RFP6N50
TB334
20KW motor
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RFM10N50
Abstract: AN7254 AN7260 RFM10N45 TA17435
Text: [ /Title RFM10 N45, RFM10 N50 /Subject (10A, 450V and 500V, 0.600 Ohm, NChannel Power MOSFETs) /Author () /Keywords (Harris Semiconductor, NChannel Power MOSFETs, TO204AA) /Creator () /DOCIN FO pdfmark RFM10N45, RFM10N50 Semiconductor 10A, 450V and 500V, 0.600 Ohm,
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RFM10
O204AA)
RFM10N45,
RFM10N50
AN7254
AN7260.
RFM10N50
AN7260
RFM10N45
TA17435
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Diode Mark N10
Abstract: RFP18N10 TA17421 RFM18N08 RFM18N10 RFP18N08 TB334
Text: [ /Title RFM18 N08, RFM18 N10, RFP18N 08, RFP18N 10 /Subject (18A, 80V and 100V, 0.1 Ohm, N-Channel Power MOSFETs) /Author () /Keywords (Harris Semiconductor, NChannel Power MOSFETs, TO204AA, TO220AB) /Creator () /DOCIN FO pdfmark RFM18N08, RFM18N10, RFP18N08, RFP18N10
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RFM18
RFP18N
O204AA,
O220AB)
RFM18N08,
RFM18N10,
RFP18N08,
RFP18N10
Diode Mark N10
RFP18N10
TA17421
RFM18N08
RFM18N10
RFP18N08
TB334
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NPN Transistor VCEO 1000V
Abstract: transistor BUX81/9
Text: BUX81 MECHANICAL DATA Dimensions in mm inches HIGH CURRENT HIGH SPEED HIGH POWER SILICON NPN PLANAR TRANSISTOR PostScript Picture C:\GRAPHICS\TO204AA EPS Applications The BUX81 is an epitaxial silicon NPN planar transistor that has high current and high power handling capability and
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BUX81
\GRAPHICS\TO204AA
BUX81
204AA
100kHz
NPN Transistor VCEO 1000V
transistor
BUX81/9
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RFL1N10
Abstract: AN7254 AN7260 RFL1N08
Text: [ /Title RFL1N 08, RFL1N1 0 /Subject (1A, 80V and 100V, 1.200 Ohm, NChannel, Power MOSFETs) /Author () /Keywords (Harris Semiconductor, NChannel, Power MOSFETs, TO204AA) /Creator () /DOCIN FO pdf- RFL1N08, RFL1N10 Semiconductor 1A, 80V and 100V, 1.200 Ohm,
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O204AA)
RFL1N08,
RFL1N10
AN7254
AN7260.
RFL1N10
AN7260
RFL1N08
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RFP12N18
Abstract: RFP12N20 "Harris Corporation 1998" AN7254 RFM12N18 RFM12N20 TB334 RFM12
Text: [ /Title RFM12 N18, RFM12 N20, RFP12N 18, RFP12N 20 /Subject (12A, 180V and 200V, 0.250 Ohm, NChannel Power MOSFETs) /Author () /Keywords (Harris Semiconductor, NChannel Power MOSFETs, TO204AA, TO220AB) /Creator () /DOCIN RFM12N18, RFM12N20, RFP12N18, RFP12N20
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RFM12
RFP12N
O204AA,
O220AB)
RFM12N18,
RFM12N20,
RFP12N18,
RFP12N20
RFP12N18
RFP12N20
"Harris Corporation 1998"
AN7254
RFM12N18
RFM12N20
TB334
RFM12
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10N90
Abstract: No abstract text available
Text: MegaMOSTMFET IXTH 12N90 IXTM 12N90 VDSS = 900 V = 12 A ID25 RDS on = 0.90 Ω N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS T J = 25°C to 150°C 900 V VDGR T J = 25°C to 150°C; RGS = 1 MΩ 900 V VGS Continuous ±20 V VGSM Transient
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12N90
O-204
O-247
O-247
O-204
10N90
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2N5683
Abstract: 2N5684 2N5683 equivalent all ic data all ic datasheet 1000C 2000C 2N5684/D
Text: TECHNICAL DATA 2N5683 JAN, JTX, JTXV 2N5684 JAN, JTX, JTXV MIL-PRF QPL DEVICES Processed per MIL-PRF-19500/466 PNP POWER SILICON TRANSISTOR MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current
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2N5683
2N5684
MIL-PRF-19500/466
1000C
2N5683
2N5684
O-204AA)
2N5683 equivalent
all ic data
all ic datasheet
1000C
2000C
2N5684/D
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2N6032
Abstract: 2N6033 all ic data all ic datasheet
Text: TECHNICAL DATA 2N6032 JANTX, JTXV 2N6033 JANTX, JTXV MIL-PRF QPL DEVICES Processed per MIL-PRF-19500/528 NPN POWER SILICON TRANSISTOR MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Collector Current Emitter-Base Voltage Base Current
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2N6032
2N6033
MIL-PRF-19500/528
2N6032
2N6033
all ic data
all ic datasheet
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2N5672
Abstract: 2N5671 2N5671JAN 15ADC 2N5671 JAN
Text: TECHNICAL DATA 2N5671 JAN, JTX, JTXV 2N5672 JAN, JTX, JTXV MIL-PRF QPL DEVICES Processed per MIL-PRF-19500/488 NPN HIGH-POWER SILICON TRANSISTOR MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current
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2N5671
2N5672
MIL-PRF-19500/488
2N5671
2N5672
O-204AA)
2N5671JAN
15ADC
2N5671 JAN
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IRF460
Abstract: SMD TRANSISTOR MARKING k38 smd transistor k38 we 751002 s SMD-6C transistor smd k45 RAD-HARD igbt IRF3504 afl2805s manufactured by international rectifier 550-065
Text: Aerospace and Defense Products Short Form Catalog 2007 Welcome to the Aerospace and Defense Products Short Form Catalog. Inside is an overview of our product line including product specific information. To learn more, visit our web site at irf.com where you will find technical documents, data sheets for all products, application notes, design tips, technical papers, application-specific information,
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30am-5
44-0-1737-2com
DB8029C
IRF460
SMD TRANSISTOR MARKING k38
smd transistor k38
we 751002 s
SMD-6C
transistor smd k45
RAD-HARD igbt
IRF3504
afl2805s manufactured by international rectifier
550-065
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Rad Hard in Fairchild for MOSFET
Abstract: 1E14 2E12 FRM234D FRM234H FRM234R equivalent components of transistor 772
Text: FRM234D, FRM234R, FRM234H 7A, 250V, 0.70 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Title RM2 D, M2 R, M2 H bt A, 0V, m, d rd, anwer OSTs) utho eyrds terrpoon, minctor, , 0V, m, d rd, Package • 7A, 250V, RDS on) = 0.70Ω TO-204AA • Second Generation Rad Hard MOSFET Results From New Design Concepts
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FRM234D,
FRM234R,
FRM234H
O-204AA
100KRAD
300KRAD
1000KRAD
3000KRAD
Rad Hard in Fairchild for MOSFET
1E14
2E12
FRM234D
FRM234H
FRM234R
equivalent components of transistor 772
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1E14
Abstract: 2E12 FRM230D FRM230H FRM230R Rad Hard in Fairchild for MOSFET
Text: FRM230D, FRM230R, FRM230H 8A, 200V, 0.50 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 8A, 200V, RDS on = 0.50Ω TO-204AA • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current
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FRM230D,
FRM230R,
FRM230H
O-204AA
100KRAD
300KRAD
1000KRAD
3000KRAD
1E14
2E12
FRM230D
FRM230H
FRM230R
Rad Hard in Fairchild for MOSFET
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mj21194
Abstract: MJ21193 MJ21193/MJ21194
Text: ON Semiconductort PNP MJ21193 * NPN MJ21194 * Silicon Power Transistors The MJ21193 and MJ21194 utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications. *ON Semiconductor Preferred Device
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MJ21193
MJ21194
MJ21193
MJ21194
r14525
MJ21193/D
MJ21193/MJ21194
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IRFAG50
Abstract: No abstract text available
Text: PD - 90582 IRFAG50 1000V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE TO-204AA/AE Product Summary Part Number IRFAG50 BVDSS 1000V RDS(on) 2.0Ω ID 5.6Α The HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.
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IRFAG50
O-204AA/AE)
electrical252-7105
IRFAG50
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FRM9240D
Abstract: 1E14 2E12 FRM9240H FRM9240R Rad Hard in Fairchild for MOSFET
Text: FRM9240D, FRM9240R, FRM9240H 7A, -200V, 0.720 Ohm, Rad Hard, P-Channel Power MOSFETs June 1998 Features Title RM9 0D, M9 0R, M9 0H bt A, 0V, 20 m, d rd, anwer OSTs) utho eyrds terrpoon, minctor, ,0V, 20 m, d rd, Package • 7A, -200V, RDS on) = 0.720Ω TO-204AA
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FRM9240D,
FRM9240R,
FRM9240H
-200V,
O-204AA
100KRAD
300KRAD
1000KRAD
3000KRAD
FRM9240D
1E14
2E12
FRM9240H
FRM9240R
Rad Hard in Fairchild for MOSFET
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2n3053A complementary
Abstract: 40362 2N4036 BUX40A 40319 2n4314 2N1893 2N2102 2N2270 2N3053
Text: THOflSON/ D IS T R IB U T O R SÔE D • =102^073 000572b OflO ■ TCSK Bipolar Power Transistors High-Speed Switching h p E at V c e “ 10V V c E » a t 'V C u rren t - mA T yp e No. v CEO<su9> V vc er (* u ) Pt w V 7W max 2N2102 FA M ILY (n-p-n) 2N697
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OCR Scan
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PDF
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a00S72b
2N2102
2N4036
120MHz
2N697
2N1613
2N3053
2N2270
T0205AD/
2N3053A
2n3053A complementary
40362
BUX40A
40319
2n4314
2N1893
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transistor 206
Abstract: 2N7370 AN-750 2N6050 2N6051 2N6052 2N6057 2N6058 2N6059 2N6285
Text: NEW ENGLAND SEMICONDUCTOR BIPOLAR DARLINGTON PNP TRANSISTOR sus VOLTS Ic (max) AMPS 2N6050 60 12 2N6051 80 2N6052 PACKAGE DEVICE TYPE PNP TO-3 TO-204AA flCX TO-254AA V cE O Ic/ V c E min/max @ A/V 1*FE @ ^C E (sat) @ IC/IB V @ A/A C(P P Ît (MHz) 750/18000@6/3
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OCR Scan
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2N6050
O-204AA
2N6051
2N6052
2N6285
2N6286
2N6287
O-254AA
2N7371
T0-204AA
transistor 206
2N7370
AN-750
2N6057
2N6058
2N6059
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IRFP240
Abstract: IRFP141 IRF140 IRF141 IRFP140 MTP4N45 MTP4N50
Text: N-Channel Power MOSFETs continued 2 30 1200 300 80 C4 1.0 1.5 2 30 1200 300 80 C4 4 0.25 0.085 15 60 1600 800 300 E1 2 4 0.25 0.085 15 60 1600 800 300 E1 17 2 4 0.25 0.085 15 60 1600 800 300 E1 29 19 2 4 0.25 0.085 15 60 1600 800 300 E^l 100 24 15 2 4 0.25
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OCR Scan
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PDF
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bSD1130
s8888888888SS88Â
T-39-01
88808S8S8088S8S8SS
T0-220
O-220
O-204AA
T0-204AA
IRFP240
IRFP141
IRF140
IRF141
IRFP140
MTP4N45
MTP4N50
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CMD8
Abstract: No abstract text available
Text: IRF232 IRF233 IRF630 By IRF631 Its IRF632 IRF633 2N6759 IRF330 IRF331 IRF333 IRF730 IRF731 Nola1: Non-JEDEC registered valua. lD@ = 25°C Tc 'ro = 100°C VGS th Id e(mA) (V) Min Max R[)S(oo) • d (ft) e (A) (nC) Max Ch. <PF) Con <PF) CtM Proc. Max (PF)
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OCR Scan
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PDF
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DD3711b
T-39-01
CMD8
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40CDQ035
Abstract: 40CDQ040 40CDQ045 SBT3040 SBT3045 SBT3050
Text: Schottky Rectifier SBT3040 M ° Dim. Inches 2 Minimum CASE D=D0UBLER A B C D E F G H J K L M CASE A=ANODE 'V ' CASE C=CATH0DE Microsemi Catalog Number SBT3040* SBT3045* SBT3050* Industry P a rt Number Working Peak Reverse Voltage 40CDQ035 40CDQ040 40CDQ045
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OCR Scan
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PDF
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SBT3040
SBT3050
O-204AA
40CDQ035
SBT3040*
40CDQ040
SBT3045*
40CDQ045
SBT3050*
SBT3040
SBT3045
SBT3050
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TA7420
Abstract: TA7530 TA7513 2N5840 2NS83 Tektronix P6019 2N5839 2N5838 equivalent 2n5840
Text: 3875081 G E SOLID STATECI DE | 3 û 7 S D f l l 0017172 I D 7^77 High-Voltage Power Transistors _ 2N5838, 2N5839, 2N5840 File Number 410 High-Voltage, High-Power Silicon N-P-N Power Transistors
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OCR Scan
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PDF
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2N5838,
2N5839,
2N5840
2N5840]
2N5839]
2NS838]
92CS-27S16
RCA-2N5838,
2N5839
2N5840"
TA7420
TA7530
TA7513
2NS83
Tektronix P6019
2N5838
equivalent 2n5840
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4N50
Abstract: IRF830 irf4321 MTP4N45 IRF430 IRF 5054 MTP4N50 MTM4N50 MK48Z02B-20 IRF431
Text: FAIRCHILD SEMICONDUCTOR A4 DE I 34L.TL7L} D O a ? i n IRF430-433/IRF830-833 M TM /M TP4N45/4N50 N-Channel Power MOSFETs, 4.5 A, 450 V /500 V FA IR C H ILD B H O H B H B A Schlumberger Company Power And Discrete Division Description T—39—11 TO-204AA TO-22QAB
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OCR Scan
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PDF
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34tclt
0e7117
IRF430-433/IRF830-833
MTM/MTP4N45/4N50
t-39-11
O-22QAB
IRF430
IRF431
IRF432
IRF433
4N50
IRF830
irf4321
MTP4N45
IRF430
IRF 5054
MTP4N50
MTM4N50
MK48Z02B-20
IRF431
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