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    TO204AA Search Results

    TO204AA Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    TO-204AA Package Intersil JEDEC TO-204AA HERMETIC STEEL PACKAGE Original PDF

    TO204AA Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    LM7805K

    Abstract: F0513 LM7915 to-3 lm140AH LM7812K F0534 LM7812 TO-39 mil-std-883 F0883 5962-8874601UX
    Text: Semelab Device Line Data BS Approval DSCC Approval QPL Approval Package IP109AK-883 - - MIL-STD 883B TO3 TO204AA IP109AK-883B - - MIL-STD 883B TO3 (TO204AA) IP109K-883B - - TO3 (TO204AA) IP109K-8QR-B - - IP109MAH-883B - - MIL-STD 883B Screened to MIL-STD


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    PDF IP109AK-883 O204AA) IP109AK-883B IP109K-883B IP109K-8QR-B IP109MAH-883B IP109MAH-8QR-B O205AD) LM7805K F0513 LM7915 to-3 lm140AH LM7812K F0534 LM7812 TO-39 mil-std-883 F0883 5962-8874601UX

    TA17425

    Abstract: AN7254 AN7260 RFM6N45 RFP6N45 RFP6N50 TB334 20KW motor
    Text: [ /Title RFM6 N45, RFP6N4 5, RFP6N5 0 /Subject (6A, 450V and 500V, 1.250 Ohm, NChannel Power MOSFETs) /Author () /Keywords (Harris Semiconductor, NChannel Power MOSFETs, TO204AA, TO220AB) /Creator () /DOCIN RFM6N45, RFP6N45, RFP6N50 Semiconductor 6A, 450V and 500V, 1.250 Ohm,


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    PDF O204AA, O220AB) RFM6N45, RFP6N45, RFP6N50 AN7254 AN7260 TA17425 AN7260 RFM6N45 RFP6N45 RFP6N50 TB334 20KW motor

    RFM10N50

    Abstract: AN7254 AN7260 RFM10N45 TA17435
    Text: [ /Title RFM10 N45, RFM10 N50 /Subject (10A, 450V and 500V, 0.600 Ohm, NChannel Power MOSFETs) /Author () /Keywords (Harris Semiconductor, NChannel Power MOSFETs, TO204AA) /Creator () /DOCIN FO pdfmark RFM10N45, RFM10N50 Semiconductor 10A, 450V and 500V, 0.600 Ohm,


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    PDF RFM10 O204AA) RFM10N45, RFM10N50 AN7254 AN7260. RFM10N50 AN7260 RFM10N45 TA17435

    Diode Mark N10

    Abstract: RFP18N10 TA17421 RFM18N08 RFM18N10 RFP18N08 TB334
    Text: [ /Title RFM18 N08, RFM18 N10, RFP18N 08, RFP18N 10 /Subject (18A, 80V and 100V, 0.1 Ohm, N-Channel Power MOSFETs) /Author () /Keywords (Harris Semiconductor, NChannel Power MOSFETs, TO204AA, TO220AB) /Creator () /DOCIN FO pdfmark RFM18N08, RFM18N10, RFP18N08, RFP18N10


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    PDF RFM18 RFP18N O204AA, O220AB) RFM18N08, RFM18N10, RFP18N08, RFP18N10 Diode Mark N10 RFP18N10 TA17421 RFM18N08 RFM18N10 RFP18N08 TB334

    NPN Transistor VCEO 1000V

    Abstract: transistor BUX81/9
    Text: BUX81 MECHANICAL DATA Dimensions in mm inches HIGH CURRENT HIGH SPEED HIGH POWER SILICON NPN PLANAR TRANSISTOR PostScript Picture C:\GRAPHICS\TO204AA EPS Applications The BUX81 is an epitaxial silicon NPN planar transistor that has high current and high power handling capability and


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    PDF BUX81 \GRAPHICS\TO204AA BUX81 204AA 100kHz NPN Transistor VCEO 1000V transistor BUX81/9

    RFL1N10

    Abstract: AN7254 AN7260 RFL1N08
    Text: [ /Title RFL1N 08, RFL1N1 0 /Subject (1A, 80V and 100V, 1.200 Ohm, NChannel, Power MOSFETs) /Author () /Keywords (Harris Semiconductor, NChannel, Power MOSFETs, TO204AA) /Creator () /DOCIN FO pdf- RFL1N08, RFL1N10 Semiconductor 1A, 80V and 100V, 1.200 Ohm,


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    PDF O204AA) RFL1N08, RFL1N10 AN7254 AN7260. RFL1N10 AN7260 RFL1N08

    RFP12N18

    Abstract: RFP12N20 "Harris Corporation 1998" AN7254 RFM12N18 RFM12N20 TB334 RFM12
    Text: [ /Title RFM12 N18, RFM12 N20, RFP12N 18, RFP12N 20 /Subject (12A, 180V and 200V, 0.250 Ohm, NChannel Power MOSFETs) /Author () /Keywords (Harris Semiconductor, NChannel Power MOSFETs, TO204AA, TO220AB) /Creator () /DOCIN RFM12N18, RFM12N20, RFP12N18, RFP12N20


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    PDF RFM12 RFP12N O204AA, O220AB) RFM12N18, RFM12N20, RFP12N18, RFP12N20 RFP12N18 RFP12N20 "Harris Corporation 1998" AN7254 RFM12N18 RFM12N20 TB334 RFM12

    10N90

    Abstract: No abstract text available
    Text: MegaMOSTMFET IXTH 12N90 IXTM 12N90 VDSS = 900 V = 12 A ID25 RDS on = 0.90 Ω N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS T J = 25°C to 150°C 900 V VDGR T J = 25°C to 150°C; RGS = 1 MΩ 900 V VGS Continuous ±20 V VGSM Transient


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    PDF 12N90 O-204 O-247 O-247 O-204 10N90

    2N5683

    Abstract: 2N5684 2N5683 equivalent all ic data all ic datasheet 1000C 2000C 2N5684/D
    Text: TECHNICAL DATA 2N5683 JAN, JTX, JTXV 2N5684 JAN, JTX, JTXV MIL-PRF QPL DEVICES Processed per MIL-PRF-19500/466 PNP POWER SILICON TRANSISTOR MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current


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    PDF 2N5683 2N5684 MIL-PRF-19500/466 1000C 2N5683 2N5684 O-204AA) 2N5683 equivalent all ic data all ic datasheet 1000C 2000C 2N5684/D

    2N6032

    Abstract: 2N6033 all ic data all ic datasheet
    Text: TECHNICAL DATA 2N6032 JANTX, JTXV 2N6033 JANTX, JTXV MIL-PRF QPL DEVICES Processed per MIL-PRF-19500/528 NPN POWER SILICON TRANSISTOR MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Collector Current Emitter-Base Voltage Base Current


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    PDF 2N6032 2N6033 MIL-PRF-19500/528 2N6032 2N6033 all ic data all ic datasheet

    2N5672

    Abstract: 2N5671 2N5671JAN 15ADC 2N5671 JAN
    Text: TECHNICAL DATA 2N5671 JAN, JTX, JTXV 2N5672 JAN, JTX, JTXV MIL-PRF QPL DEVICES Processed per MIL-PRF-19500/488 NPN HIGH-POWER SILICON TRANSISTOR MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current


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    PDF 2N5671 2N5672 MIL-PRF-19500/488 2N5671 2N5672 O-204AA) 2N5671JAN 15ADC 2N5671 JAN

    IRF460

    Abstract: SMD TRANSISTOR MARKING k38 smd transistor k38 we 751002 s SMD-6C transistor smd k45 RAD-HARD igbt IRF3504 afl2805s manufactured by international rectifier 550-065
    Text: Aerospace and Defense Products Short Form Catalog 2007 Welcome to the Aerospace and Defense Products Short Form Catalog. Inside is an overview of our product line including product specific information. To learn more, visit our web site at irf.com where you will find technical documents, data sheets for all products, application notes, design tips, technical papers, application-specific information,


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    PDF 30am-5 44-0-1737-2com DB8029C IRF460 SMD TRANSISTOR MARKING k38 smd transistor k38 we 751002 s SMD-6C transistor smd k45 RAD-HARD igbt IRF3504 afl2805s manufactured by international rectifier 550-065

    Rad Hard in Fairchild for MOSFET

    Abstract: 1E14 2E12 FRM234D FRM234H FRM234R equivalent components of transistor 772
    Text: FRM234D, FRM234R, FRM234H 7A, 250V, 0.70 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Title RM2 D, M2 R, M2 H bt A, 0V, m, d rd, anwer OSTs) utho eyrds terrpoon, minctor, , 0V, m, d rd, Package • 7A, 250V, RDS on) = 0.70Ω TO-204AA • Second Generation Rad Hard MOSFET Results From New Design Concepts


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    PDF FRM234D, FRM234R, FRM234H O-204AA 100KRAD 300KRAD 1000KRAD 3000KRAD Rad Hard in Fairchild for MOSFET 1E14 2E12 FRM234D FRM234H FRM234R equivalent components of transistor 772

    1E14

    Abstract: 2E12 FRM230D FRM230H FRM230R Rad Hard in Fairchild for MOSFET
    Text: FRM230D, FRM230R, FRM230H 8A, 200V, 0.50 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 8A, 200V, RDS on = 0.50Ω TO-204AA • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current


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    PDF FRM230D, FRM230R, FRM230H O-204AA 100KRAD 300KRAD 1000KRAD 3000KRAD 1E14 2E12 FRM230D FRM230H FRM230R Rad Hard in Fairchild for MOSFET

    mj21194

    Abstract: MJ21193 MJ21193/MJ21194
    Text: ON Semiconductort PNP MJ21193 * NPN MJ21194 * Silicon Power Transistors The MJ21193 and MJ21194 utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications. *ON Semiconductor Preferred Device


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    PDF MJ21193 MJ21194 MJ21193 MJ21194 r14525 MJ21193/D MJ21193/MJ21194

    IRFAG50

    Abstract: No abstract text available
    Text: PD - 90582 IRFAG50 1000V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED  HEXFET TRANSISTORS THRU-HOLE TO-204AA/AE Product Summary Part Number IRFAG50 BVDSS 1000V RDS(on) 2.0Ω ID 5.6Α  The HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.


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    PDF IRFAG50 O-204AA/AE) electrical252-7105 IRFAG50

    FRM9240D

    Abstract: 1E14 2E12 FRM9240H FRM9240R Rad Hard in Fairchild for MOSFET
    Text: FRM9240D, FRM9240R, FRM9240H 7A, -200V, 0.720 Ohm, Rad Hard, P-Channel Power MOSFETs June 1998 Features Title RM9 0D, M9 0R, M9 0H bt A, 0V, 20 m, d rd, anwer OSTs) utho eyrds terrpoon, minctor, ,0V, 20 m, d rd, Package • 7A, -200V, RDS on) = 0.720Ω TO-204AA


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    PDF FRM9240D, FRM9240R, FRM9240H -200V, O-204AA 100KRAD 300KRAD 1000KRAD 3000KRAD FRM9240D 1E14 2E12 FRM9240H FRM9240R Rad Hard in Fairchild for MOSFET

    2n3053A complementary

    Abstract: 40362 2N4036 BUX40A 40319 2n4314 2N1893 2N2102 2N2270 2N3053
    Text: THOflSON/ D IS T R IB U T O R SÔE D • =102^073 000572b OflO ■ TCSK Bipolar Power Transistors High-Speed Switching h p E at V c e “ 10V V c E » a t 'V C u rren t - mA T yp e No. v CEO<su9> V vc er (* u ) Pt w V 7W max 2N2102 FA M ILY (n-p-n) 2N697


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    PDF a00S72b 2N2102 2N4036 120MHz 2N697 2N1613 2N3053 2N2270 T0205AD/ 2N3053A 2n3053A complementary 40362 BUX40A 40319 2n4314 2N1893

    transistor 206

    Abstract: 2N7370 AN-750 2N6050 2N6051 2N6052 2N6057 2N6058 2N6059 2N6285
    Text: NEW ENGLAND SEMICONDUCTOR BIPOLAR DARLINGTON PNP TRANSISTOR sus VOLTS Ic (max) AMPS 2N6050 60 12 2N6051 80 2N6052 PACKAGE DEVICE TYPE PNP TO-3 TO-204AA flCX TO-254AA V cE O Ic/ V c E min/max @ A/V 1*FE @ ^C E (sat) @ IC/IB V @ A/A C(P P Ît (MHz) 750/18000@6/3


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    PDF 2N6050 O-204AA 2N6051 2N6052 2N6285 2N6286 2N6287 O-254AA 2N7371 T0-204AA transistor 206 2N7370 AN-750 2N6057 2N6058 2N6059

    IRFP240

    Abstract: IRFP141 IRF140 IRF141 IRFP140 MTP4N45 MTP4N50
    Text: N-Channel Power MOSFETs continued 2 30 1200 300 80 C4 1.0 1.5 2 30 1200 300 80 C4 4 0.25 0.085 15 60 1600 800 300 E1 2 4 0.25 0.085 15 60 1600 800 300 E1 17 2 4 0.25 0.085 15 60 1600 800 300 E1 29 19 2 4 0.25 0.085 15 60 1600 800 300 E^l 100 24 15 2 4 0.25


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    PDF bSD1130 s8888888888SS88Â T-39-01 88808S8S8088S8S8SS T0-220 O-220 O-204AA T0-204AA IRFP240 IRFP141 IRF140 IRF141 IRFP140 MTP4N45 MTP4N50

    CMD8

    Abstract: No abstract text available
    Text: IRF232 IRF233 IRF630 By IRF631 Its IRF632 IRF633 2N6759 IRF330 IRF331 IRF333 IRF730 IRF731 Nola1: Non-JEDEC registered valua. lD@ = 25°C Tc 'ro = 100°C VGS th Id e(mA) (V) Min Max R[)S(oo) • d (ft) e (A) (nC) Max Ch. <PF) Con <PF) CtM Proc. Max (PF)


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    PDF DD3711b T-39-01 CMD8

    40CDQ035

    Abstract: 40CDQ040 40CDQ045 SBT3040 SBT3045 SBT3050
    Text: Schottky Rectifier SBT3040 M ° Dim. Inches 2 Minimum CASE D=D0UBLER A B C D E F G H J K L M CASE A=ANODE 'V ' CASE C=CATH0DE Microsemi Catalog Number SBT3040* SBT3045* SBT3050* Industry P a rt Number Working Peak Reverse Voltage 40CDQ035 40CDQ040 40CDQ045


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    PDF SBT3040 SBT3050 O-204AA 40CDQ035 SBT3040* 40CDQ040 SBT3045* 40CDQ045 SBT3050* SBT3040 SBT3045 SBT3050

    TA7420

    Abstract: TA7530 TA7513 2N5840 2NS83 Tektronix P6019 2N5839 2N5838 equivalent 2n5840
    Text: 3875081 G E SOLID STATECI DE | 3 û 7 S D f l l 0017172 I D 7^77 High-Voltage Power Transistors _ 2N5838, 2N5839, 2N5840 File Number 410 High-Voltage, High-Power Silicon N-P-N Power Transistors


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    PDF 2N5838, 2N5839, 2N5840 2N5840] 2N5839] 2NS838] 92CS-27S16 RCA-2N5838, 2N5839 2N5840" TA7420 TA7530 TA7513 2NS83 Tektronix P6019 2N5838 equivalent 2n5840

    4N50

    Abstract: IRF830 irf4321 MTP4N45 IRF430 IRF 5054 MTP4N50 MTM4N50 MK48Z02B-20 IRF431
    Text: FAIRCHILD SEMICONDUCTOR A4 DE I 34L.TL7L} D O a ? i n IRF430-433/IRF830-833 M TM /M TP4N45/4N50 N-Channel Power MOSFETs, 4.5 A, 450 V /500 V FA IR C H ILD B H O H B H B A Schlumberger Company Power And Discrete Division Description T—39—11 TO-204AA TO-22QAB


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    PDF 34tclt 0e7117 IRF430-433/IRF830-833 MTM/MTP4N45/4N50 t-39-11 O-22QAB IRF430 IRF431 IRF432 IRF433 4N50 IRF830 irf4321 MTP4N45 IRF430 IRF 5054 MTP4N50 MTM4N50 MK48Z02B-20 IRF431