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    TOSHIBA 2SJ200 Search Results

    TOSHIBA 2SJ200 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    DF2B5M4ASL Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-3.6 V, SOD-962 (SL2) Visit Toshiba Electronic Devices & Storage Corporation
    74HC4053FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SPDT(1:2)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    TCR5RG28A Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 2.8 V, 500 mA, WCSP4F Visit Toshiba Electronic Devices & Storage Corporation

    TOSHIBA 2SJ200 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    2SK2056

    Abstract: 2SK1603 2SK1723 2sk1377 transistor 2SK1603 2SK2146 2SK2351 MOSFET 2sk1357 transistor 2sk1213 2SK2402
    Text: TOSHIBA TOSHIBA POWER MOSFETs 1Q, 1999 Alphanumerically Toshiba Power MOSFET List Alphanumerically Part VDSS RDS ON Number (V) (Ω) ID (A) Package Generation Status 2SJ147 -60 0.2 -12 TO-220IS π -MOSII Non-Promotion 2SJ183 -60 0.35 -5 POWER MOLD L - π -MOSIII


    Original     		2SJ147 O-220IS 2SJ183 2SJ200 2SJ201 2SJ224 O-220FL/SM 2SJ238 2SJ239 2SJ240 2SK2056 2SK1603 2SK1723 2sk1377 transistor 2SK1603 2SK2146 2SK2351 MOSFET 2sk1357 transistor 2sk1213 2SK2402 PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SJ200 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE 2SJ200 HIGH PO W ER AM PLIFIER APPLICATION Unit in mm 1 5.9 M A X. • High Breakdown Voltage • High Forward Transfer Admittance : |Yfs|= 4.0S Typ. • Complementary to 2SK 1529


    OCR Scan     		2SJ200 --180V SC-65 2-16C1B PDF

    2SK1529

    Abstract: No abstract text available
    Text: TOSHIBA 2SK1529 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2 S K 1 529 HIGH POWER AMPLIFIER APPLICATION • • • INDUSTRIAL APPLICATIONS Unit in mm High Breakdown Voltage : Vj3gg = 180V High Forward Transfer Admittance : |Yfs| = 4.0S Typ.


    OCR Scan     		2SK1529 2SJ200 2SK1529 PDF

    k1529

    Abstract: 2SJ200 2SK1529 SC-65
    Text: TOSHIBA 2SK1529 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2 S K 1 529 HIGH POWER AMPLIFIER APPLICATION IN D U S T R IA L A P P L IC A T IO N S U n it in mm : V j g g = 180V • H igh Forw ard Transfer Adm ittance : |Yfs|= 4.0S Typ.) • Com plem entary to 2SJ200


    OCR Scan     		2SK1529 2SJ200 k1529 2SJ200 2SK1529 SC-65 PDF

    2SK1529

    Abstract: toshiba 2Sj200
    Text: TOSHIBA 2SK1529 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2 S K 1 529 HIGH PO W ER AM PLIFIER APPLICATION • • • INDUSTRIAL APPLICATIONS Unit in mm High Breakdown Voltage : Vj gg= 180V High Forward Transfer Admittance : |Yfs| = 4.0S Typ.)


    OCR Scan     		2SK1529 2SJ200 2SK1529 toshiba 2Sj200 PDF

    2n 3904 411

    Abstract: 2SB 407 2SK176 Toshiba 2SC3281 K 1113 2sk toshiba TA4100F TOSHIBA 2N
    Text: TOSHIBA Appendix i SV 1 8 6 . 9 1S V 229. 11 1SV237 . 13


    OCR Scan     		1SV237 1SV239. 1SV257 TA4100F. YTS2222. YTS2222A. YTS2907. YTS2907A. YTS3904. YTS3906. 2n 3904 411 2SB 407 2SK176 Toshiba 2SC3281 K 1113 2sk toshiba TA4100F TOSHIBA 2N PDF

    K1529

    Abstract: 2sk1529 2sj200 2SJ200 2SK1529 Toshiba 2SJ
    Text: 2SK1529 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1529 High Power Amplifier Application Unit: mm High breakdown voltage : VDSS = 180V High forward transfer admittance : |Yfs| = 4.0 S typ. Complementary to 2SJ200 Maximum Ratings (Ta = 25°C)


    Original     		2SK1529 2SJ200 K1529 K1529 2sk1529 2sj200 2SJ200 2SK1529 Toshiba 2SJ PDF

    K1529

    Abstract: 2SK1529 2SJ200 Toshiba 2SJ
    Text: 2SK1529 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1529 High-Power Amplifier Application Unit: mm High breakdown voltage : VDSS = 180V High forward transfer admittance : |Yfs| = 4.0 S typ. Complementary to 2SJ200 Maximum Ratings (Ta = 25°C)


    Original     		2SK1529 2SJ200 K1529 K1529 2SK1529 2SJ200 Toshiba 2SJ PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SK1529 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1529 High Power Amplifier Application Unit: mm High breakdown voltage : VDSS = 180V High forward transfer admittance : |Yfs| = 4.0 S typ. Complementary to 2SJ200 Maximum Ratings (Tc = 25°C)


    Original     		2SK1529 2SJ200 2-16C1B K1529 PDF

    2SJ200

    Abstract: 2sk1529/2sj200
    Text: 2SJ200 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ200 High Power Amplifier Application Unit: mm High breakdown voltage : VDSS = −180 V High forward transfer admittance : |Yfs| = 4.0 S typ. Complementary to 2SK1529 Maximum Ratings (Tc = 25°C)


    Original     		2SJ200 2SK1529 2-16C1B 2SJ200 2sk1529/2sj200 PDF

    2SJ200

    Abstract: 2SJ20
    Text: 2SJ200 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ200 High Power Amplifier Application Unit: mm High breakdown voltage : VDSS = −180 V High forward transfer admittance : |Yfs| = 4.0 S typ. Complementary to 2SK1529 Maximum Ratings (Ta = 25°C)


    Original     		2SJ200 2SK1529 2-16C1B 2SJ200 2SJ20 PDF

    c 111 transistor

    Abstract: No abstract text available
    Text: TOSHIBA FIELD EFFECT TRANSISTOR 2SK1529 SILICON N CHANNEL MOS TYPE HIGH POWER AMPLIFIER APPLICATION Unit in mm 15.9MAX . High Breakdown Voltage 03.2±O.2 : Vj ss“180V MIN.) 7 . High Forward Transfer Admittance : | Yfs | “4.OS (TYP.) . Complementary to 2SJ200


    OCR Scan     		2SK1529 2SJ200 Ta-25 Tcm25 SC-65 2-16C1B c 111 transistor PDF

    2SJ200

    Abstract: 6C1B
    Text: I 2SJ200 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE HIGH POWER AMPLIFIER APPLICATION Unit in mm . High Breakdown Voltage X5.9MAX 03.2 ±0.2 : V jjss “"180V MIN. . High Forward Transfer Admittance : | Yfs | “4.OS (TYP.) r . . Complementary to 2SK1529


    OCR Scan     		2SJ200 2SK1529 2SJ200 6C1B PDF

    K1529

    Abstract: 2SJ200 2SK1529 Toshiba 2SJ 2sk1529 2sj200
    Text: 2SK1529 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1529 High Power Amplifier Application Unit: mm l High breakdown voltage : VDSS = 180V l High forward transfer admittance : |Yfs| = 4.0 S typ. l Complementary to 2SJ200 Maximum Ratings (Ta = 25°C)


    Original     		2SK1529 2SJ200 K1529 K1529 2SJ200 2SK1529 Toshiba 2SJ 2sk1529 2sj200 PDF

    2SJ200

    Abstract: 2sk1529 2sj200 Toshiba 2SJ
    Text: 2SJ200 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ200 High Power Amplifier Application Unit: mm z High breakdown voltage : VDSS = −180 V z High forward transfer admittance : |Yfs| = 4.0 S typ. z Complementary to 2SK1529 Absolute Maximum Ratings (Ta = 25°C)


    Original     		2SJ200 2SK1529 2-16C1B 2SJ200 2sk1529 2sj200 Toshiba 2SJ PDF

    2sj200

    Abstract: 2SK1529 Toshiba 2SJ
    Text: 2SJ200 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ200 High Power Amplifier Application Unit: mm l High breakdown voltage : VDSS = −180 V l High forward transfer admittance : |Yfs| = 4.0 S typ. l Complementary to 2SK1529 Maximum Ratings (Ta = 25°C)


    Original     		2SJ200 2SK1529 2-16C1B 2sj200 2SK1529 Toshiba 2SJ PDF

    2SJ200

    Abstract: 2SK1529 transistor application Toshiba 2SJ
    Text: 2SJ200 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ200 High Power Amplifier Application Unit: mm z High breakdown voltage : VDSS = −180 V z High forward transfer admittance : |Yfs| = 4.0 S typ. z Complementary to 2SK1529 Absolute Maximum Ratings (Ta = 25°C)


    Original     		2SJ200 2SK1529 2-16C1B 2SJ200 2SK1529 transistor application Toshiba 2SJ PDF

    2SJ200

    Abstract: 2SK1529
    Text: 2SJ200 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ200 High Power Amplifier Application Unit: mm High breakdown voltage : VDSS = −180 V z High forward transfer admittance : |Yfs| = 4.0 S typ. z Complementary to 2SK1529 Absolute Maximum Ratings (Ta = 25°C)


    Original     		2SJ200 2SK1529 2-16C1B 2SJ200 2SK1529 PDF

    2SK1529

    Abstract: K1529 2SJ200
    Text: 2SK1529 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1529 High-Power Amplifier Application Unit: mm z High breakdown voltage : VDSS = 180V z High forward transfer admittance : |Yfs| = 4.0 S typ. z Complementary to 2SJ200 Absolute Maximum Ratings (Ta = 25°C)


    Original     		2SK1529 2SJ200 2SK1529 K1529 2SJ200 PDF

    2SK1529

    Abstract: Toshiba 2SJ
    Text: 2SK1529 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1529 High-Power Amplifier Application Unit: mm z High breakdown voltage : VDSS = 180V z High forward transfer admittance : |Yfs| = 4.0 S typ. z Complementary to 2SJ200 Absolute Maximum Ratings (Ta = 25°C)


    Original     		2SK1529 2SJ200 2SK1529 Toshiba 2SJ PDF

    2SK1529

    Abstract: 2SJ200 K1529 SC-65 toshiba pb includes toshiba 2-16c1b
    Text: 2SK1529 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1529 Unit: mm High-Power Amplifier Application z High breakdown voltage : VDSS = 180 V z High forward transfer admittance : |Yfs| = 4.0 S typ. z Complementary to 2SJ200 Absolute Maximum Ratings (Ta = 25°C)


    Original     		2SK1529 2SJ200 2SK1529 2SJ200 K1529 SC-65 toshiba pb includes toshiba 2-16c1b PDF

    2SK3566 equivalent

    Abstract: 2SK3562 equivalent 2SK3561 equivalent 2SK3878 equivalent 2SK3568 equivalent 2SK3911 equivalent 2SK941 equivalent tpc8118 equivalent replacement tpc8118 2SK3767 equivalent
    Text: 2007-12 PRODUCT GUIDE Power MOSFETs Toshiba’s power MOSFET devices meet the needs of a wide range of ultra-high-density applications. 1.Features and Structure. 2


    Original     		BCE0017E S-167 BCE0017F 2SK3566 equivalent 2SK3562 equivalent 2SK3561 equivalent 2SK3878 equivalent 2SK3568 equivalent 2SK3911 equivalent 2SK941 equivalent tpc8118 equivalent replacement tpc8118 2SK3767 equivalent PDF

    toshiba j200

    Abstract: No abstract text available
    Text: T O SH IB A 2SJ200 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE 2 SJ 2QQ Unit in mm HIGH POWER AMPLIFIER APPLICATION 1 5.9 MAX. High Breakdown Voltage : V j}ss= —180V High Forward Transfer Admittance : |Yfg| = 4.0S Typ. Complementary to 2SK1529


    OCR Scan     		2SJ200 toshiba j200 PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA Discrete Semiconductors 2SJ200 Field Effect Transistor 2 Silicon P Channel M O ST ype L -ti-MOS IV High Speed, High Current DC-DC Converter, Relay Drive and Motor Drive Applications Features • 4-Volt Gate Drive • Low Drain-Source ON Resistance


    OCR Scan     		2SJ200 PDF