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    TP6N60 Search Results

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    TP6N60 Price and Stock

    STMicroelectronics STP6N60M2

    MOSFET N-CH 600V 4.5A TO220
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    DigiKey STP6N60M2 Tube 26 1
    • 1 $1.79
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    Avnet Americas STP6N60M2 Tube 16 Weeks 2,000
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    Mouser Electronics STP6N60M2 1,975
    • 1 $1.6
    • 10 $0.82
    • 100 $0.658
    • 1000 $0.611
    • 10000 $0.586
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    Newark STP6N60M2 Bulk 1
    • 1 $1.71
    • 10 $1.13
    • 100 $0.878
    • 1000 $0.791
    • 10000 $0.743
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    STMicroelectronics STP6N60M2 1,975 1
    • 1 $1.57
    • 10 $0.8
    • 100 $0.65
    • 1000 $0.62
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    TME STP6N60M2 24 1
    • 1 $1.34
    • 10 $1.06
    • 100 $0.96
    • 1000 $0.88
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    ComSIT USA STP6N60M2 1,000
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    Avnet Silica STP6N60M2 17 Weeks 50
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    EBV Elektronik STP6N60M2 17 Weeks 50
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    Rochester Electronics LLC NTP6N60

    N-CHANNEL POWER MOSFET
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    DigiKey NTP6N60 Bulk 355
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    • 1000 $0.85
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    Motorola Semiconductor Products MTP6N60E

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    Bristol Electronics MTP6N60E 16
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    onsemi NTP6N60

    6A, 600V, 1.2ohm, N-Channel Power MOSFET, TO-220AB '
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    Rochester Electronics NTP6N60 79,150 1
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    STMicroelectronics STP6N60FP

    IN STOCK SHIP TODAY
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    Component Electronics, Inc STP6N60FP 50
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    TP6N60 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TP6N60

    Abstract: MTP6N6
    Text: S G S -T H O M S O N ;L [iO T ô « S M T P 6 N 60 _ N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE M TP6N60 . • . . V d ss RDS(on I Id 600 V 1.2 fi I 6.8 A AVALANCHE RUG G EDN ESS TECHNO LO GY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100°C


    OCR Scan     		PDF TP6N60 MTP6N60 TP6N60 MTP6N6

    TP6N60

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by TP6N60E/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M TP6N60E TMOS E-FET ™ Power Field Effect Transistor Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate T his high vo lta g e M O S F E T uses an adva n ce d te rm in a tio n


    OCR Scan     		PDF MTP6N60E/D TP6N60E 21A-09 TP6N60

    TP6N60

    Abstract: 6N60
    Text: *57 SGS-THOMSON iL iO M K I M T P 6 N 60 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE M TP6N60 V dss R DS on Id 600 V < 1.2 a 6.8 A . TYPICAL RDs(on) = 1 f i • AVALANCHE RUGGED TECHNOLOGY . 100% AVALANCHE TESTED . REPETITIVE AVALANCHE DATA AT 100°C


    OCR Scan     		PDF TP6N60 TP6N60 6N60

    P6N60

    Abstract: p6n55 tp6n55 6N55 MTP6N55 TP6N60 SITH 6n55 data MTP6N6 power mosfet 6n60
    Text: MOTOROLA • SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet M T P 6N 55 M T P 6N 60 P o w e r Field E ffe ct T ra n sisto r N -Ch ann el Enhancem ent-M ode S ilic o n G ate T M O S These TM O S P ow er FETs are designed fo r h ig h voltag e , high speed p o w e r s w itc h in g a pp licatio n s such as sw itch in g regu la to rs,


    OCR Scan     		PDF MTP6N55 P6N60 p6n55 tp6n55 6N55 TP6N60 SITH 6n55 data MTP6N6 power mosfet 6n60

    TP8N10

    Abstract: th15n20 TH7N50 TP4N10 TP10N05 IRFP350FI TP5N35 tp5n40 TP4N45 TP3N40
    Text: CROSS REFERENCE INDUSTRY STANDARD SGS-THOMSON NEAREST PAGE INDUSTRY STANDARD SGS-THOMSON 2SK295 2SK296 2SK308 2SK310 2SK311 SGSP351 IRF723 IRF142 IRF722 IRF833 499 307 261 307 331 BUZ11A BUZ11FI BUZ11P BUZ11S2 BUZ11S2FI BUZ11A BUZ11FI BUZ11FI BUZ11S2 BUZ11S2FI


    OCR Scan     		PDF 2SK295 2SK296 2SK308 2SK310 2SK311 2SK312 2SK313 2SK319 2SK320 2SK324 TP8N10 th15n20 TH7N50 TP4N10 TP10N05 IRFP350FI TP5N35 tp5n40 TP4N45 TP3N40

    MTM13N50E

    Abstract: P40N10 24N40 p50n05 8n50e Power MOSFET Cross Reference Guide motorola 20n50e TP50N05E IRF510 mosfet irf640 33N10E
    Text: ir tmos Cross-Reference The follow ing table represents a cro ss-re fe re n ce guide for all T M O S P ow er M O SFETs w hich are m an ufacture d directly by M otorola. W here the M otorola part nu m be r differs from the Industry part num ber, the M otorola de vice is a “form , fit and fu n ctio n ”


    OCR Scan     		PDF BUZ10 BUZ11 BUZ11A BUZ11S2 BUZ15 BUZ171 BUZ20 BUZ21 BUZ23 BUZ31 MTM13N50E P40N10 24N40 p50n05 8n50e Power MOSFET Cross Reference Guide motorola 20n50e TP50N05E IRF510 mosfet irf640 33N10E

    6N60E

    Abstract: p6n60e TP6N60E
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet M T P 6N 60E TM O S E -F E T ™ P o w er Field E ffe c t T ran sistor M otorola P referred Device N-Channel Enhancement-Mode Silicon G te TMOS POWER FET 6.0 AMPERES 600 VOLTS ^DS on * 1.2 OHMS


    OCR Scan     		PDF MTP6N60E 6N60E p6n60e TP6N60E