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    TR 431 Search Results

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    TR 431 Price and Stock

    Microchip Technology Inc UTR4310

    DIODE GEN PURP 100V 4A B AXIAL
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    DigiKey UTR4310 Bulk 100
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    Avnet Americas UTR4310 Bulk 24 Weeks 100
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    Newark UTR4310 Bulk 100
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    Microchip Technology Inc UTR4310
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    NAC UTR4310 29
    • 1 $12.59
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    Master Electronics UTR4310
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    Midwest Machine Tool Supply GAST-R4310A-2

    REGENER BLOWER 1HP 230/460-60-3
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    DigiKey GAST-R4310A-2 Bulk 1
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    Midwest Machine Tool Supply GAST-R4310P-50

    REGENER BLOWER EXPLOSION-PROOF 1
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    DigiKey GAST-R4310P-50 Bulk 1
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    Spectrah Dynamics Inc TR4-312121100

    Touch Panel 12.1-Inch Stylus/Finger Resistive - Bulk (Alt: TR4-312121100)
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    Spectrah Dynamics Inc TR4-310414050

    Touch Panel 10.4-Inch Stylus/Finger Resistive - Bulk (Alt: TR4-310414050)
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    TR 431 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    ATT pub 62411

    Abstract: T7290-EL T7290 T7290A T7290-PL lucent technologies W series T-7290A TR-TSY-000009
    Text: Product Brief August 2000 T7290A DS1/T1/CEPT/E1 Line Interface Features • Fully integrated DS1/T1/CEPT/E1 line interface ■ For use in systems that are compliant with CB119, AT&T PUB 43801, AT&T PUB 43802, AT&T PUB 62411, TR-TSY-000170, TR-TSY-000009, ITUTG.703, G.735, G.823, and I.431 specifications


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    PDF T7290A CB119, TR-TSY-000170, TR-TSY-000009, PB00-092NCIP PN98-128TIC) ATT pub 62411 T7290-EL T7290 T7290-PL lucent technologies W series T-7290A TR-TSY-000009

    Ultrafast Photodetectors GmbH

    Abstract: G7096-03
    Text: ULTRAFAST MSM PHOTODETECTORS G4176 SERIES GaAs G7096 SERIES (InGaAs) Ultrafast response of several tens picosecond FEATURES Ultrafast response *1 G4176-03 : tr , tf = 30 ps (Typ.) G7096-03 : tr = 40 ps*1(Typ.) Low dark current G4176 series : 100 pA (Ta=25 °C)


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    PDF G4176 G7096 G4176-03 G7096-03 G4176-03 G4176-01 G7096-01 Ultrafast Photodetectors GmbH G7096-03

    G4176-03

    Abstract: MSM photodetector G417603 Ultrafast Photodetectors GMbh GaAs MSM G4176 G4176-01 G7096 G7096-01 photodetectors
    Text: PRELIMINARY DATA ULTRAFAST MSM PHOTODETECTORS G4176 SERIES GaAs G7096 SERIES (InGaAs) Ultrafast response of several tens picosecond FEATURES Ultrafast response G4176-03 : tr , tf = 30 ps (Typ.) G7096-03 : tr = 40 ps (Typ.) Low dark current G4176 series : 100 pA (Ta=25 °C)


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    PDF G4176 G7096 G4176-03 G7096-03 G4176-01 G7096-01 G4176-03 MSM photodetector G417603 Ultrafast Photodetectors GMbh GaAs MSM G4176-01 G7096-01 photodetectors

    106 20k

    Abstract: T7290 T7290A pub 43801
    Text: Data Sheet April 1998 T7290A DS1/T1/CEPT/E1 Line Interface Features • Fully integrated DS1/T1/CEPT/E1 line interface ■ For use in systems that are compliant with CB119, AT&T PUB 43801, AT&T PUB 43802, AT&T PUB 62411, TR-TSY-000170, TR-TSY-000009, ITU-T


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    PDF T7290A CB119, TR-TSY-000170, TR-TSY-000009, DS98-190TIC DS97-197TIC) 106 20k T7290 pub 43801

    G4176-03

    Abstract: G7096-03 G417603 G4176 G7096 LPRD1022J03
    Text: PRELIMINARY DATA 超高速MSMフォトディテクタ G4176シリーズ(GaAs) G7096シリーズ(InGaAs) 超高速応答を実現した受光素子 •特長 ●超高速応答 G4176-03 : tr , tf = 30 ps(Typ.) G7096-03 : tr = 40 ps(Typ.)


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    PDF G4176GaAs G7096InGaAs G4176-03 G7096-03 G4176 G4176-01 G7096-01 G4176-03 G7096-03 G417603 G4176 G7096 LPRD1022J03

    2N4093

    Abstract: No abstract text available
    Text: 2N4093 N-CHANNEL J-FET Qualified per MIL-PRF-19500/431 8.59 Tr. 1 of 1 Home Part Number: 2N4093 Online Store 2N4093 Diodes N- C HANNEL J - F ET Q ualified per M IL- PRF -1 9 5 0 0 / 4 3 1 Transistors


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    PDF 2N4093 MIL-PRF-19500/431 com/2n4093 2N4093

    l706002

    Abstract: FEp30
    Text: HIGH-POWER INFRARED PULSED LASER DIODE L7060-02 PRELIMINARY DATA FEATURES High output power Fep 30 W High speed rise time (tr 2 ns Typ.) APPLICATIONS Laser rader Range finder Excitation light source Optical trigger Security barrier Figure 1: Dimensional Outline (Unit: mm)


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    PDF L7060-02 SE-171-41 LLD1003E05 l706002 FEp30

    Untitled

    Abstract: No abstract text available
    Text: INFRARED PULSED LASER DIODE L6690-53 PRELIMINARY DATA FEATURES High speed rise time tr 2 ns typ. Output Power : 10 W (at DR=0.05 %) MTTF 20000hrs Compact APPLICATIONS Laser rader Range finder Optical trigger Security barrier Figure 1: Dimensional Outline (Unit: mm)


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    PDF L6690-53 20000hrs SE-171-41 LLD1023E02

    2SC2389S

    Abstract: transistor 431 a 380 transistor 431 transistor
    Text: SPICE PARAMETER 2SC2389S by ROHM TR Div. * Q2SC2389S NPN BJT model * Date: 2006/12/06 .MODEL Q2SC2389S NPN + IS=63.000E-15 + BF=380.57 + VAF=100 + IKF=.14961 + ISE=63.000E-15 + NE=1.5906 + BR=8.8318 + VAR=100 + IKR=3.5414 + ISC=122.12E-12 + NC=1.7074 + NK=.88203


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    PDF 2SC2389S Q2SC2389S 000E-15 12E-12 487E-12 2787E-12 99E-12 726E-9 2SC2389S transistor 431 a 380 transistor 431 transistor

    CA 339G

    Abstract: No abstract text available
    Text: * P , V I H j K A I fc L U K ^ U Il TC528257J / Z /FT /TR - 70 , TC528257J / Z / FT / TR - 80 irti B A TECHNICAL D A TA SILICON GATE CMOS TENTATIVE DATA 262.144WORDS x 8BITS MULTIPORT DRAM DESCRIPTION The TC528257J / Z / FT / TR is a 2M bit CMOS multiport memory equipped with a 262,144-words by


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    PDF TC528257J 144WORDS 144-words 256-words 528257J/Z TC5282Râ CA 339G

    Nanotec Electronic GmbH

    Abstract: No abstract text available
    Text: HYUNDAI REPRESENTATIVES CENTRAL REGION CANADA TECH T R EK , LTD. 1015 Matheson Blvd. Unit #6 Mississauga, Ontario L4W 3A4 TECH TR EK , LTD. 2271 Guenette St. St. Laurent, Quebec H4R 2E9 TECH TR EK , LTD. 155 Terence Matthews Cres., Unit 7, Kanata, Ontano K2M 2A8


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    PDF 20405S Nanotec Electronic GmbH

    trw RF POWER TRANSISTOR

    Abstract: trw rf transistor trw transistors LT 9228 trw 131* RF POWER TRANSISTOR trw rf semiconductors 2023-12 TRW 52604 TP 9382 trw hybrid
    Text: TR W RF SEMICONDUCTORS CATALOG 1981 EUROPEAN EDITION TABLE OF CONTENTS Pages • • • • INTRODUCTION. Q U A LITY .


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    mje 3001

    Abstract: MJ3583 2N3583 MOTOROLA MJ3585 MJ3701 2N3583 MJ2253 MJ3760 MJ3761 transistor SE 431
    Text: MJ3583 thru MJ3585 SILICON MJ3701 (SILICON) p o r specifications, §ee 2N3583 Data. For Specifications, See MJ2253 Data. MJ3760 (silicon) MJ3761 H O RIZO N TAL D E FL E C T IO N SILICO N TR A N SISTO R S 6.0/8.0 AM PERE T R IP L E D IFF U S E D POWER TR A N S IS TO R S


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    PDF MJ3583 MJ3585 2N3583 MJ3701 MJ2253 MJ3760 MJ3761 MJ3760 MJ3761 16-COLLECTOR-BASE mje 3001 2N3583 MOTOROLA MJ3585 MJ3701 transistor SE 431

    157b

    Abstract: No abstract text available
    Text: CMOS DRAM KM416C157B/BL/BLL 256K X 16 Bit CMOS Dynamic RAM with Fast Page Mode GENERAL DESCRIPTION FEATURES • Performance range: T h e S a m s u n g K M 4 1 6 C 1 5 7 B /B L /B L L is a C M O S h ig h tR A C tC A C tR C KM 416 C 157B /B L/B LL-5 50ns 15ns


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    PDF KM416C157B/BL/BLL 110ns 130ns 150ns 40-LEAD 157b

    B083D

    Abstract: u82720 A110D TDA4100 ub8830d V40511D taa981 A109D sy 710 IC 7447
    Text: > i ! U O i j q > i a | a S [ ^ ] 0 [ y y H erstellerbetriebe Bei den einzelnen Erzeugnissen werden die Herstellerbetriebe durch die nachfolgend angegebenen Symbole gekennzeichnet: VEB M ik ro e le k tro n ik „K a rl M a r x “ Erfurt L e itb e tr ie b im VEB K o m b in a t M ik ro e le k tr o n ik


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    upc 1230

    Abstract: LTI084 LT1084 SDP1084T SDP1084U 5962-89521
    Text: C o n tr a n Devices, Inc. 3301 Electronics Way, West Palm Beach, FL 33407 Tel: 561 848-4311 Fax:(561)863-5946 http://www.solitrondevices.com SDP1084U SDP1084T 5 AMP LOW DROPOUT POSITIVE ADJUSTABLE REGULATOR APPROVED TO DSCC DRAWING 596298648 (MIL-PRF-38534) SAME AS DSCC DRAWING


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    PDF SDP1084U SDP1084T MIL-PRF-38534) MIL-PRF-38535) O-258AA LT1084 5962-9864801U 18VUFE/CIS upc 1230 LTI084 LT1084 SDP1084T 5962-89521

    VERPACKUNGSVORSCHRIFT

    Abstract: No abstract text available
    Text: RA 2505.RA 2510 Si-Gleichrichterzellen in Button-Bauform Silicon Rectifier Button-Cell m 25 A Nominal current Nennstrom =a 50. 1000 V Repetitive peak reverse voltage Periodische Spitzensperrspannung tr Plastic case, coloured metal ring indicates cathode


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    PDF UL94V-0 0D1RS14 DGG174 000017S VERPACKUNGSVORSCHRIFT

    YW 431 scr

    Abstract: YW 431 VECTRON CO-233ME CO-233MET CO-233KEQ CO-233ME CO233M CO-456 C0451 CO-450
    Text: 15E D I VE-CTRON LABORATO RIE S INC =1447320 000D530 3 | ECL Clock Oscillators T - 5 0 - 2 3 STANDARD ECL 100K ECL Ü Series E LEC TR IC A L Frequency Output see note on page 26 CO-431: CO-432: CO-434: CO-436: CO-437: CO-434:200.1-300 MHz Other models: 5.0-200 MHz


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    PDF 000D530 CO-431: CO-432: CO-434: CO-436: CO-437: C0-233ME C0-233MEH CO-451: CO-452: YW 431 scr YW 431 VECTRON CO-233ME CO-233MET CO-233KEQ CO-233ME CO233M CO-456 C0451 CO-450

    A 673 C2 transistor

    Abstract: RF POWER TRANSISTOR NPN vhf BLW30
    Text: PH IL IP S INTERNATIONAL Philips Semiconductors_ LSE D m 711002b 00^31 0^ 3bl • PHIN _ Product specification VHF power transistor BLW30 QUICK REFERENCE DATA RF performance at Tr t = 25 °C in a common emitter test circuit.


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    PDF 711002b BLW30 OT120 -SOT12Q MBA451 RA377 A 673 C2 transistor RF POWER TRANSISTOR NPN vhf BLW30

    117L7

    Abstract: 2e22 6JV6 6BM8 12EC8 6au5gt 6HF5 6GH8A 6HB5 12U7
    Text: TUNS-SOL TECHNICAL DATA TUNG-SOL ELECTRON TUBES TUNG-SOL ELECTRIC INC. ELEC TR O N T U B E DIVISIO N NEW ARK, N. }. U. S. A. PL ATE 275r OCT. 1 1951 C O P Y R IG H T 1 9 0 1 BY T U N O - S O L E L EC TR IC IN C . E L E C T R O N IC T U B E D IV ISIO N N E W A R K . N E W J E R S E Y . U . S. A.


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    PDF 19JN8 19JN8 117L7 2e22 6JV6 6BM8 12EC8 6au5gt 6HF5 6GH8A 6HB5 12U7

    BLW10

    Abstract: BLW40 mcd202 philips Film-dielectric Trimmer Capacitors 808 RF POWER TRANSISTOR NPN vhf sot120 LA 4451 philips Trimmer 60 pf QDST337 BLw vhf
    Text: Philips Semiconductors M b b S B 1^ ! DTT • AP X Productspecification VHF power tr a n s is to r _ BLW40 AMER PHILIPS/DISCRETE b^E » FEATURES • Emitter-ballasting resistors for an optimum temperature profile • Gold metallization ensures


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    PDF BLW40 OT120 -SOT120 MBA451 BLW10 BLW40 mcd202 philips Film-dielectric Trimmer Capacitors 808 RF POWER TRANSISTOR NPN vhf sot120 LA 4451 philips Trimmer 60 pf QDST337 BLw vhf

    HP4284A

    Abstract: No abstract text available
    Text: XFMRS, Inc. SPECMCAI10N FOR APPROVAL XFMRS P/N : XFEB16Q808~431~Q.4A Rev: A/1 DIMENSION : mftn Dimensions t S liu ctu ie Ferrite B 01.6*02 0.&ÍÍX2 D 0.3+Û3 T erm inal ele ctro d e G H TIN NICKEL S IL V E R FERRITE T ER M IN A L ELE C TR O D E CO NSTRUCTION


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    PDF XFEB16Q808 400mA MIL-STD-202G, UL94V-0 E151556 4401A 4286ARF HP4284A

    1773a

    Abstract: UT69161 MIL-STD-1773
    Text: Military Standard Products UT69161 ASCENT Dual-Rate 1773A Protocol Device Product Brief UNITED TECHNOLOGIES CENTERLEC TR 0N ,C S February 1995 □ 8- FEATURES □ Advanced Speed and Computing on an Enhanced Networking Terminal ASCENT □ Comprehensive MIL-STD-1773A dual redundant Bus


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    PDF UT69161 MIL-STD-1773A 20Mbps IL-STD-1553B MIL-STD-1773A 16-bit ASCENT-1-2-95-PB 00D41b2 1773a MIL-STD-1773

    2SK1515

    Abstract: S 437 Diode
    Text: 2SK1515,2SK1516 Silicon N-Channel MOS FET HITACHI Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current Built-in fast recovery diode tr, = 120 ns Suitable for motor control, switching regulator, DC-DC converter


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    PDF 2SK1515 2SK1516 2SK1516 2SK1515, S 437 Diode