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    TRANSISTOR 800A 711 Search Results

    TRANSISTOR 800A 711 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 800A 711 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2711-K5A2

    Abstract: 2711-NC1 TFT capacitive touchscreen, 16M colors 2711-b5a5 Allen-Bradley vfd 755 fault list 2706-D21J2 T12C6 2711-K5A1 slc 500 database to excel 2711-B5A2
    Text: Section Seven Operator Interface Operator Interface Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7-3 Message Displays MessageView Interactive Message Display Terminals . . . . . . . . . . . . . . . . . . 7-6 Dataliner Message Displays . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .


    Original     		PDF ConfigJ64 2706-E43J64B1 2706-E43J128 2706-E43J128B1 2711-B5AÀ 2711-K5AÀ 2711-K9AÀ 2711-K9CÀ 2711-T9AÀ 2711-T9CÀ 2711-K5A2 2711-NC1 TFT capacitive touchscreen, 16M colors 2711-b5a5 Allen-Bradley vfd 755 fault list 2706-D21J2 T12C6 2711-K5A1 slc 500 database to excel 2711-B5A2

    rm3 transistor

    Abstract: BUK478
    Text: Philips Com ponents Data sheet status Preliminary specification date of issue March 1991 BUK 476-800A/B PowerMOS transistor Replaces BUK446-800A/B PHILIPS INTERNATIONAL GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope.


    OCR Scan     		PDF 76-800A/B BUK446-800A/B 7110flSb -800A -800B BUK476 BUK476-800A/B 7110f rm3 transistor BUK478

    TRANSISTOR 40

    Abstract: BUK474-800A
    Text: -7 ^ 3 1 Philips Components Data sheet status Preliminary specification date of issue March 1991 - C f f BUK474-800A/B PowerMOS transistor Replaces BUK444-800A/B PHILIPS INTERNATIONAL G EN E R A L DESCRIPTION N-channel enhancement mode field-effect power transistor in a


    OCR Scan     		PDF BUK474-800A/B BUK444-800A/B 711002b BUK474 -800A -800B T-39-09 BUK474-800A/B 0044b33 TRANSISTOR 40 BUK474-800A

    BUK426-800A

    Abstract: No abstract text available
    Text: Philips Com ponents Data sheet status Product specification BUK426-800A/B PowerMOS transistor date of issue March 1991 PHILIPS INTERNATIONAL SbE D 1_ I GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a


    OCR Scan     		PDF BUK426-800A/B BUK426 -800B T-39-11 7110fl5tj BUK426-800A

    BUK428-800A

    Abstract: BUK428-800B transistor cms
    Text: Philips Components Data sheet status Prelim inary specification date of issue March 1991 PHILIPS BUK428-800A/B PowerMOS transistor S bE INTERNATIONAL GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope.


    OCR Scan     		PDF OT199 BUK428-800A/B 711002b BUK428 -800A -800B BUK428-800A BUK428-800B transistor cms

    K428

    Abstract: BUK428-800B diode K428 BUK428-800A K-428 BUK428
    Text: Philips Components Data sheet status Prelim inary specification date of issue March 1991 PHILIPS BUK428-800A/B PowerMOS transistor S bE INTERNATIONAL GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope.


    OCR Scan     		PDF OT199 BUK428-800A/B 711002b BUK428 -800A -800B K428 BUK428-800B diode K428 BUK428-800A K-428

    k426

    Abstract: LD 25 V BUK426-800A transistor bu
    Text: ' T ~ 3 cî ' - ( Philips Com ponents Data sheet status Product specification date of issue March 1991 BUK426-800A/B PowerMOS transistor c.F n PHILIPS INTERNATIONAL I_ l GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a


    OCR Scan     		PDF BUK426-800A/B 711005t. BUK426 -600A -800B PINNING-SOT199 k426 LD 25 V BUK426-800A transistor bu

    GI 312 diode

    Abstract: sc1s3 K638 BUK638 BUK638-800A GDH473T
    Text: Philips Components D ata sheet status Preliminary specification d ate of issue March 1991 BUK638-800A/B PowerMOS transistor Fast recovery diode FET PHILIPS INTERN A T I O N A L GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a


    OCR Scan     		PDF BUK638-800A/B 711DflSh GDH473T BUK638 -800A -800B 71100Eb GI 312 diode sc1s3 K638 BUK638-800A

    DIODE B97

    Abstract: BUK446-800A BUK446-800A application BUK476 BUK476-800A BUK476-800B 3909
    Text: Philips Components Data sheet status Prelim inary specification date of issue M arch 1991 - 3 9 - 0 ? BUK 476-800A/B PowerMOS transistor R e p laces B U K 44 6-8 00 A /B PHILIPS INTERNATIONAL GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a


    OCR Scan     		PDF BUK446-800A/B 76-800A/B -SOT186A 7110flSb DCI44fc BUK476 -800A -800B BUK476-800A/B 7110fi2b DIODE B97 BUK446-800A BUK446-800A application BUK476-800A BUK476-800B 3909

    K638

    Abstract: idm 73
    Text: Philips Components Data sheet status Prelim inary specification date of issue March 1991 BUK638-800A/B PowerMOS transistor Fast recovery diode FET PHI L IP S I N T E R N A T I O N A L GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a


    OCR Scan     		PDF BUK638-800A/B 711Gfl2b BUKS38 -800A K638-800A/B K638 idm 73

    BUK474

    Abstract: BUK474-800A BUK474-800B 3909
    Text: Philips Components Data sheet status Prelim inary specification date of issue March 1991 - 7 ^ 3 9 -— C f? BUK474-800A/B PowerMOS transistor Replaces B U K 4 4 4 -8 0 0 A /B PHILIPS INTERNATIONAL GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a


    OCR Scan     		PDF BUK444-800A/B PINNING-SOT186A BUK474-800A/B 711002b BUK474 -800A -800B BUK474-800A BUK474-800B 3909

    Untitled

    Abstract: No abstract text available
    Text: T -3 9 -V Philips Components Data sheet status Prelim inary specification date of issue March 1991 BUK428-800A/B PowerMOS transistor SbE D PHI L IP S I N T E R N A T I O N A L GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a


    OCR Scan     		PDF BUK428-800A/B BUK428 -800A -800B

    100-P

    Abstract: BUK446 BUK446-800A BUK446-800B transistor SE 431 ha 431 transistor
    Text: PHI LI P S I N T E R N A T I O N A L bSE D Kl 7 1 1 0 Ô S b Ü O b M Ol b E4S H P H I N Philips Semiconductors Product Specification BUK446-800A/B PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope.


    OCR Scan     		PDF 711002b BUK446-800A/B -SOT186 BUK446 -800A -800B 7110a2b 100-P BUK446-800A BUK446-800B transistor SE 431 ha 431 transistor

    pj 66 diode

    Abstract: 100-P BUK438-800A BUK438-800B
    Text: PHILIPS INTERNATIONAL ¡□SE ]> 711002b 3fi4 H P H I N Philips Semiconductors Product Specification PowerMOS transistor GEN ERAL DESCRIPTION N-channel enhancement mode fìeld-effect power transistor in a plastic envelope. The device is intended for use in


    OCR Scan     		PDF 7110fl2b BUK438-800A/B BUK438 -800A -800B pj 66 diode 100-P BUK438-800A BUK438-800B

    BUK436-800A

    Abstract: BUK436-800B
    Text: PHILIPS INT ERNATIONAL bSE D B 711062b 0Db3T0b b47 « P H I N Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in


    OCR Scan     		PDF 711062b BUK436-800A/B BUK436 -800A -800B BUK436-800A BUK436-800B

    diode RP 6040

    Abstract: 1N111 BUK436-800A BUK436-800B bsh 13 - n1 RFT Semiconductors
    Text: PHILIPS INT ERNATIONAL bSE D B 711062b 0Db3T0b b47 « P H I N Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in


    OCR Scan     		PDF 711062b BUK436-800A/B BUK436 -800A -800B 7110A2fci diode RP 6040 1N111 BUK436-800A BUK436-800B bsh 13 - n1 RFT Semiconductors

    AFLB

    Abstract: ic 4075 ic 4075 or gate 800B BUK454-800A BUK454-800B T0220AB
    Text: PHILIPS INTERNATIONAL bSE ]> • 7110aSb ODbHQTl Philips Semiconductors PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,


    OCR Scan     		PDF 711002b BUK454-800A/B T0220AB BUK454 -800A -800B AFLB ic 4075 ic 4075 or gate 800B BUK454-800A BUK454-800B

    s00b

    Abstract: PQZ1
    Text: PHILIPS INTERNATIONAL bSE D • 711002b 0 0 b m 2 b 075 « P H I N Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in


    OCR Scan     		PDF 711002b BUK456-800A/B BUK456 -800A -80QB -T0220AB 711062b 00b4130 s00b PQZ1

    100-P

    Abstract: BUK454-800A BUK454-800B T0220AB
    Text: PHILIPS INTERNATIONAL bSE D • 711DflSt. 00b4D71 13fl M P H I N Philips Semiconductors Product Specification PowerMOS transistor GEN ER AL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in


    OCR Scan     		PDF 711DflSt. 00b4D71 BUK454-800A/B T0220AB BUK454 -800A -800B 100-P BUK454-800A BUK454-800B

    BUK456

    Abstract: BUK456-800A BUK456-800B
    Text: PHILIPS INTERNATIONAL bSE D • 711002b 0 0 b m 2 b 075 « P H I N Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in


    OCR Scan     		PDF 7110fl2b BUK456-800A/B -T0220AB BUK456 -800A -800B 711062b DQb4130 BUK456-800A BUK456-800B

    DSAFRZWS

    Abstract: No abstract text available
    Text: PHILIPS I N T E R N A T I O N A L bSE D B 711DfiSh 0 0 b 3 ^ D b b47 • PHIN Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in


    OCR Scan     		PDF 711DfiSh BUK436-800A/B BUK436 -800A -800B DSAFRZWS

    BUK444

    Abstract: BUK444-800A BUK444-800B YA11
    Text: PHILIPS INTERNATIONAL fc.SE D • 7110fl2b DDt,3^fll 356 ■ PHIN Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in


    OCR Scan     		PDF 7110fl2b BUK444-800A/B OT186 BUK444 -800A -800B BUK444-800A BUK444-800B YA11

    philips ID 35

    Abstract: BUK436-800A
    Text: PHILIPS I N T E R N A T I O N A L bSE D B 711DfiSh 0 0 b 3 ^ D b b47 • PHIN Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in


    OCR Scan     		PDF 711Qfl2b BUK436-800A/B BUK436 -800A -800B philips ID 35 BUK436-800A

    100-P

    Abstract: BUK438-800A BUK438-800B
    Text: PHIL I PS I N T E R N A T I O N A L bSE » B 711002b O O b S « ^ Philips Semiconductors PowerMOS transistor GENERAL DESCRIPTION N-channe! enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies


    OCR Scan     		PDF 71iafl2b BUK438-800A/B BUK438 -800B 100-P BUK438-800A BUK438-800B