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    TRANSISTOR BSF Search Results

    TRANSISTOR BSF Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR BSF Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    inductive proximity sensor

    Abstract: IA 05
    Text: Proximity Sensors Inductive High Temperature Types IA, M5, 8, NPN/PNP • Stainless steel housings • Sensing distance: 0.8 - 1 mm • Power supply: 10 to 30 VDC • Output: Transistor NPN or PNP, make switching • For flush mounting • 2 m silicone cable


    Original     		PDF

    0A4B

    Abstract: keypad 4x4 7 segment display 4x4 matrix keypad membrane 4x4 matrix keypad and microcontroller 4X4 HEX KEY PAD keypad membrane 4X4 LTC3710G hex keypad 4x4 hex keypad 7 segment display 4x4 keyboard
    Text: AN529 Multiplexing LED Drive and a 4x4 Keypad Sampling Author: drive of the LEDs is possible, because of the high sink and source capabilities of PIC16C5X microcontroller, thus eliminating the use of an external drive transistor, and results in a reduction in both cost and complexity of


    Original     		PDF AN529 PIC16C5X PIC16C5X DS00529E-page 0A4B keypad 4x4 7 segment display 4x4 matrix keypad membrane 4x4 matrix keypad and microcontroller 4X4 HEX KEY PAD keypad membrane 4X4 LTC3710G hex keypad 4x4 hex keypad 7 segment display 4x4 keyboard

    EPC1001

    Abstract: EPC Gan transistor MARKING 1001
    Text: EPC1001 DATASHEET EPC1001 – Enhancement Mode Power Transistor VDSS – 100 V RDS ON – 7 m1 ID – 25 A EFFICIENT POWER CONVERSION Preliminary information subject to change without notice Gallium Nitride is grown on Silicon Wafers and processed using standard CMOS equipment leveraging the


    Original     		PDF EPC1001 EPC1001 EPC Gan transistor MARKING 1001

    4X4 HEX KEY PAD

    Abstract: keypad membrane 4X4 4x4 hex keypad with microcontroller 4x4 hex keypad hex keypad 4-DIGIT 7-SEGMENT LED DISPLAY AN529 LTC3710G 061c 065B
    Text: AN529 Multiplexing LED Drive and a 4x4 Keypad Sampling Author: drive of the LEDs is possible, because of the high sink and source capabilities of PIC16C5X microcontroller, thus eliminating the use of an external drive transistor, and results in a reduction in both cost and complexity of


    Original     		PDF AN529 PIC16C5X PIC16C5X 4X4 HEX KEY PAD keypad membrane 4X4 4x4 hex keypad with microcontroller 4x4 hex keypad hex keypad 4-DIGIT 7-SEGMENT LED DISPLAY AN529 LTC3710G 061c 065B

    IA 05

    Abstract: No abstract text available
    Text: Proximity Sensors Inductive High Temperature Types IA, DC, M5, M8 • • • • • • Stainless steel housings Sensing distance: 0.8 - 1 mm Power supply: 10 to 30 VDC Output: Transistor NPN or PNP, make switching For flush mounting 2 m silicone cable Product Description


    Original     		PDF

    transistor 257A

    Abstract: No abstract text available
    Text: Proximity Sensors Inductive High Temperature Types IA, DC, M5, M8 • • • • • • Stainless steel housings Sensing distance: 0.8 - 1 mm Power supply: 10 to 30 VDC Output: Transistor NPN or PNP, make switching For flush mounting 2 m silicone cable Product Description


    Original     		PDF

    4x4 matrix keypad in pic with c code

    Abstract: 108 046f keypad 4x4 c code for dspic 4X4 HEX KEY PAD keypad membrane 4X4 big 4-digit seven segment led display pic 4x4 matrix keypad dspic LTC3710G 4x4 hex keypad keypad 4x4 c code for pic
    Text: AN529 Multiplexing LED Drive and a 4x4 Keypad Sampling Author: drive of the LEDs is possible, because of the high sink and source capabilities of PIC16C5X microcontroller, thus eliminating the use of an external drive transistor, and results in a reduction in both cost and complexity of


    Original     		PDF AN529 PIC16C5X PIC16C5X D-81739 4x4 matrix keypad in pic with c code 108 046f keypad 4x4 c code for dspic 4X4 HEX KEY PAD keypad membrane 4X4 big 4-digit seven segment led display pic 4x4 matrix keypad dspic LTC3710G 4x4 hex keypad keypad 4x4 c code for pic

    IA06BSF10NO

    Abstract: IA06BSF10NC IA06BSF10NCM5 IA06BSF10NOM5 IA06BSF10PO IA06BSF10POM5 IA06BSN20NC IA06BSN20NCM5 IA06BSN20NO IA06BSN20NOM5
    Text: Proximity Sensors Inductive Stainless Steel Housing Types IA, Ø6.5 • Miniature Ø6.5 stainless steel housing • Short housing • Sensing distance: 1.0 and 2.0 mm • Power supply: 10 to 30 VDC • Output: Transistor NPN/PNP, make or break switching • Protection: Short-circuit, reverse polarity and transients


    Original     		PDF

    TRANSISTOR M5

    Abstract: Transistor npn BSF 70
    Text: y Proximity Sensors Inductive ant r r a Short body, Stainless Steel Housing sw r a e Types IA, M5 5y • Miniature stainless steel housing M5 • Short body • Sensing distance: 1,2 mm • Power supply: 10 to 30 VDC • Output: Transistor NPN/PNP, make or break switching


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE fc^E D bbsa^i dos^ m tsd i IAPX BLW60C V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated mobile, industrial and military transmitters with a nominal supply voltage of 12,5 V. The transistor is resistance stabilized


    OCR Scan     		PDF BLW60C nsforFigs16and17:

    sx3704

    Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
    Text: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide


    OCR Scan     		PDF

    NE243187

    Abstract: NE243188
    Text: NPN MEDIUM POWER OSCILLATOR TRANSISTOR NE243 SERIES FEATURES_ DESCRIPTION • HIGH OSCILLATOR POWER OUTPUT: The NE243 NPN series transistor is desined for oscillator applications to 10 GHz. Reliable operation is assured by NEC's gold, platinum and titanium metallization system. The


    OCR Scan     		PDF NE243 NE24300 NE243187 NE243188 NE243287 NE243288 NE243499

    BUK444-600B

    Abstract: 100-P 003US
    Text: N AMER PHILIPS/DISCRETE bTE D m bbSBTai 0030540 TOO * A P X Philips Sem iconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in


    OCR Scan     		PDF BUK444-600B -SOT186 bbS3T31 0D3D544 BUK444-600B 100-P 003US

    K543

    Abstract: BUK543 BUK543-60A BUK543-60B
    Text: N AMER P H I L I P S / D I S C R E T E bTE D • 1^ 5 3 ^ 3 1 GDaDTSD Philips Sem iconductors B U K543-60A/B PowerMOS transistor Logic level FET_ GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic tull-pack


    OCR Scan     		PDF K543-60A/B -SOT186 K543 BUK543 BUK543-60A BUK543-60B

    mbd501

    Abstract: CA426
    Text: NEWBRIDGE MICROSYSTEMS bSflfllOl O G G C m f l 5SE D b CA426 DC-DC CONVERTER T '5 7 - H Low power High efficiency Few external components Standby supply current typically 1 nA Output switch transistor current to300mA Output current limit protection The CA426 Is a tow power, high efficiency DC-DC Con­


    OCR Scan     		PDF CA426 300mA CA426 25KHz) 20jisec 36X10^ 40x10" 293jiH mbd501

    Untitled

    Abstract: No abstract text available
    Text: N AMER PHIL IPS /DI SCRE TE bTE D m bbS3T31 DD3D7SD 711 W A P X Philips Semiconductors Product Specification PowerMOS transistor BUK543-60A/B Logic level GENERAL DESCRIPTION N-channel enhancement mode


    OCR Scan     		PDF bbS3T31 BUK543-60A/B PINNING-SOT186 BUK543

    4-221

    Abstract: transistor mosfet n-ch drain current NDS9958 Dual N & P-Channel MOSFET
    Text: National Semiconductor" May 1996 NDS9958 Dual N & P-Channel Enhancement Mode Field Effect Transistor General Description Features These dual N- and P-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS


    OCR Scan     		PDF NDS9958 b501130 0Q400bl 4-221 transistor mosfet n-ch drain current NDS9958 Dual N & P-Channel MOSFET

    SL 100 NPN Transistor

    Abstract: n38 transistor 100 n38 transistor base pin 4 pin dual-emitter SL 100 NPN Transistor base emitter collector BFG590 RF TRANSISTOR 2.5 GHZ s parameter sot143r transistor
    Text: Philips Semiconductors Product specification BFG590; BFG590/X; BFG590/XR NPN 5 GHz wideband transistor FEATURES MARKING • High power gain TYPE NUMBER • Low noise figure BFG590 N38 • High transition frequency BFG590/X N44 • Gold metallization ensures


    OCR Scan     		PDF BFG590; BFG590/X; BFG590/XR OT143 OT143R BFG590 BFG590/X BFG590/XR BFG590 711DflSb SL 100 NPN Transistor n38 transistor 100 n38 transistor base pin 4 pin dual-emitter SL 100 NPN Transistor base emitter collector RF TRANSISTOR 2.5 GHZ s parameter sot143r transistor

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA IRF150 P ow er Field Effect Transistor N-Channel Enhancem ent-Mode Silicon Gate This T M O S Power FET is designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid


    OCR Scan     		PDF IRF150 b72S4

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors bbS3^31 HF/VHF power MOS transistor — ^ — — FEATURES QDBTTS? H lfl APX Product specification BLF241E N AUER PHILIPS/DISCRETE b^E D PIN CONFIGURATION • High power gain • Easy power control • Gold metallization • Good thermal stability


    OCR Scan     		PDF BLF241E O-39/3) MBA379

    k20s

    Abstract: NPN planar RF transistor RZ3135B14W
    Text: 7= 3 3 -/'' Philips Components Data sheet status Prelim inary specification date of Issue Jun e 1992 PHILIPS RZ3135B14W NPN silicon planar epitaxial microwave power transistor INTERNAT IONAL FEATURES Sb E D 711Dö2tj • In te rd ig ita te d s tru c tu re ; high


    OCR Scan     		PDF RZ3135B14W 711002b D04bSÃ 100fis T-33-1T 7110aSb k20s NPN planar RF transistor RZ3135B14W

    1DI300ZN-1

    Abstract: JE711 JE71 B348 zener ci 5t
    Text: 1DI300ZN-120 300A ✓ < 7 - : Outline Drawings 7 h POWER TRANSISTOR MODULE : Features • hpE^'fiH-' High DC Current Gain • f * - K rt* • a e ^ O T ia ^ t - t : Applications • i/ L ffl'f V’-'i— 9 General Purpose Inverter • Uninterruptible Power Supply


    OCR Scan     		PDF 1DI300ZN-120 E82988 Recommen85 1DI300ZN-1 JE711 JE71 B348 zener ci 5t

    Untitled

    Abstract: No abstract text available
    Text: SPP 47N10 P relim in ary Data SIPMOS Power Transistor Product Summary Features • N channel • Enhancement mode • Avalanche rated Drain source voltage ^DS Drain-Source on-state resistance RDS on Continuous drain current b 100 V 0.033 n 47 A • d v/d i rated


    OCR Scan     		PDF 47N10 SPP47N10 P-T0220-3-1 Q67040-S4183 SPB47N10 P-T0263-3-2 Q67040-S4178 S35bQ5 Q133777

    L600M

    Abstract: No abstract text available
    Text: Panasonic ICs for Motor AN3840NSR VTR Capstan-Drive 1C • Overview AN3840NSR Unit ; mm The AN 3840N SR is an 1C for driving the V T R capstan motor. The reduction of acoustic noise, vibration and torque rip­ ple of motor can be realized. ■ Features • Output transistor built-in


    OCR Scan     		PDF AN3840NSR 3840N 24-pin HSQP024-P-0450) 0D12A03 L600M