TRANSISTOR C 129 Search Results

TRANSISTOR C 129 Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

TRANSISTOR C 129 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
ansley idc ribbon connector Abstract: augat plug adapter assembly socket 8723 transistor ansley ribbon connector 16 pin ansley female connector ansley cable flat flexible Augat 10 Pin round Socket transistor 8926 round female pin header 3-1437515-3 Text: Tyco/Augat PCB Connectors, Sockets, Plug Assemblies and Tooling Transistor Sockets 600 Series Ñ AG and CG Plug Adapter Assemblies c c c c c c c Polarization: Dot, Notch, Bump c Contact Plating: 30 µ" Gold per Mil-G-45204 The Augat Transistor sockets utilize hi-rel machined outer sleeves and gold plated inner contacts assembled into a low	Original	Mil-G-45204 profi00-499 609-XX06 609-XX ansley idc ribbon connector augat plug adapter assembly socket 8723 transistor ansley ribbon connector 16 pin ansley female connector ansley cable flat flexible Augat 10 Pin round Socket transistor 8926 round female pin header 3-1437515-3	PDF
234 8715 Abstract: Ic 9430 HFA3046 HFA3046B HFA3096 HFA3096B HFA3127 HFA3127B HFA3128 HFA3128B Text: HFA3046, HFA3096, HFA3127, HFA3128 S E M I C O N D U C T O R Ultra High Frequency Transistor Arrays August 1996 Features Description • NPN Transistor fT . . . . . . . . . . . . . . . . . . . . . . . . 8GHz The HFA3046, HFA3096, HFA3127 and the HFA3128 are	Original	HFA3046, HFA3096, HFA3127, HFA3128 HFA3127 HFA3128 234 8715 Ic 9430 HFA3046 HFA3046B HFA3096 HFA3096B HFA3127B HFA3128B	PDF
HFA3046 Abstract: NPN Monolithic Transistor Pair HFA3046B HFA3046Y HFA3096 HFA3096B HFA3096Y HFA3127 HFA3127B HFA3128 Text: HFA3046, HFA3096, HFA3127, HFA3128 S E M I C O N D U C T O R Ultra High Frequency Transistor Array July 1995 Features Description • NPN Transistor fT . . . . . . . . . . . . . . . . . . . . . . . . . 8GHz The HFA3046, HFA3096, HFA3127 and the HFA3128 are	Original	HFA3046, HFA3096, HFA3127, HFA3128 HFA3127 HFA3128 HFA3046 NPN Monolithic Transistor Pair HFA3046B HFA3046Y HFA3096 HFA3096B HFA3096Y HFA3127B	PDF
transistor 224-1 base collector emitter Abstract: transistor 0588 Text: SILICON TRANSISTOR NE461M02 NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER FEATURES • • PACKAGE OUTLINE M02 BOTTOM VIEW 4.5±0.1 1.6±0.2 C DESCRIPTION 0.42 ±0.06 0.42 ±0.06 0.25±0.02 3.0 PIN CONNECTIONS E: Emitter C: Collector	Original	NE461M02 OT-89 NE461M02 24-Hour transistor 224-1 base collector emitter transistor 0588	PDF
HFA3046 Abstract: TYPE 85.54 542E02 542E-02 Text: HFA3046, HFA3096, HFA3127, HFA3128 S E M I C O N D U C T O R Ultra High Frequency Transistor Arrays March 1998 Features Description • NPN Transistor fT . . . . . . . . . . . . . . . . . . . . . . . . 8GHz The HFA3046, HFA3096, HFA3127 and the HFA3128 are	Original	HFA3046, HFA3096, HFA3127, HFA3128 HFA3127 HFA3128 HFA3046 TYPE 85.54 542E02 542E-02	PDF
MAPHST0034 Abstract: MAPHST MAPHS VCC36 9-GHz c 129 transistor Text: MAPHST0034 RADAR PULSED POWER TRANSISTOR 129 WATTS, 2.70-2.90 GHz, 100µs PULSE, 10% DUTY Datasheet 032803 ECRIEE OUTLINE DRAWING FEATURES ∗ NPN Silicon Microwave Power Transistor ∗ Common Base Configuration ∗ Broadband Class C Operation ∗ High Efficiency Interdigitated Geometry	Original	MAPHST0034 29Wpk, MAPHST0034 MAPHST MAPHS VCC36 9-GHz c 129 transistor	PDF
transistor s11 s12 s21 s22 Abstract: NE856M02-T1-AZ NE856M02 Text: SILICON TRANSISTOR NE856M02 NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER FEATURES • • PACKAGE OUTLINE M02 BOTTOM VIEW 4.5±0.1 1.6±0.2 C E B E 0.8 MIN DESCRIPTION The NE856M02 is an NPN silicon epitaxial bipolar transistor	Original	OT-89 NE856M02 NE856M02 transistor s11 s12 s21 s22 NE856M02-T1-AZ	PDF
V 7271 U Abstract: 421506 4948 transistor bf IC 7555 datasheet 7555 harris Dual Long-Tailed Pair Transistor Array NE 7555 T 3108 001 TOP 100-124 500E Text: HFA3102 S E M I C O N D U C T O R Dual Long-Tailed Pair Transistor Array August 1994 Features Description • High Gain-Bandwidth Product fT . . . . . . . . . . . 10GHz The HFA3102 is an all NPN transistor array configured as dual differential amplifiers with tail transistors. Based on	Original	HFA3102 10GHz HFA3102 10GHz) V 7271 U 421506 4948 transistor bf IC 7555 datasheet 7555 harris Dual Long-Tailed Pair Transistor Array NE 7555 T 3108 001 TOP 100-124 500E	PDF
4948 transistor bf Abstract: 7555 harris NE 7555 p 8123 transistor V 7271 U 500E 800E HFA3102 HFA3102B HFA3102B96 Text: HFA3102 S E M I C O N D U C T O R Dual Long-Tailed Pair Transistor Array August 1996 Features Description • High Gain-Bandwidth Product fT . . . . . . . . . . . 10GHz The HFA3102 is an all NPN transistor array configured as dual differential amplifiers with tail transistors. Based on	Original	HFA3102 10GHz HFA3102 10GHz) 4948 transistor bf 7555 harris NE 7555 p 8123 transistor V 7271 U 500E 800E HFA3102B HFA3102B96	PDF
285-1 MAG IC Abstract: C 2851 transistor c 3198 transistor 1348 transistor Transistor 168 TRANSISTOR C 2570 IC 4073 B15V18008 c 2570 transistor Text: BIPOLARICS, INC. Part Number B15V18008 SILICON MICROWAVE POWER TRANSISTOR PRODUCT DATA SHEET DESCRIPTION AND APPLICATIONS: FEATURES: • Bipolarics' B15V18008 is a high performance silicon bipolar transistor intended for power linear and Class C applications	Original	B15V18008 B15V18008 285-1 MAG IC C 2851 transistor c 3198 transistor 1348 transistor Transistor 168 TRANSISTOR C 2570 IC 4073 c 2570 transistor	PDF
Harris HFA3101 5 GHz Gilbert cell array Abstract: Array chip resistors fiber optic FM Modulator FM Modulator 2GHz 500E 800E H3101B HFA3101 reactance modulator HFA3101B96 Text: HFA3101 S E M I C O N D U C T O R Gilbert Cell UHF Transistor Array August 1996 Features Description • High Gain Bandwidth Product fT . . . . . . . . . . . 10GHz The HFA3101 is an all NPN transistor array configured as a Multiplier Cell. Based on Harris bonded wafer UHF-1 SOI	Original	HFA3101 10GHz HFA3101 10GHz) Harris HFA3101 5 GHz Gilbert cell array Array chip resistors fiber optic FM Modulator FM Modulator 2GHz 500E 800E H3101B reactance modulator HFA3101B96	PDF
kf 8715 Abstract: fiber optic FM Modulator gilbert cell sum RF TRANSISTOR 10GHZ FM Modulator 2GHz rf digital modulators ic 50E08 stub tuner matching 500E HFA3101 Text: HFA3101 S E M I C O N D U C T O R Gilbert Cell UHF Transistor Array July 1995 Features Description • High Gain Bandwidth Product fT . . . . . . . . . . . 10GHz The HFA3101 is an all NPN transistor array configured as a Multiplier Cell. Based on Harris bonded wafer UHF-1 SOI	Original	HFA3101 10GHz HFA3101 10GHz) 390nH 825MHz 900MHz 75MHz 76MHz kf 8715 fiber optic FM Modulator gilbert cell sum RF TRANSISTOR 10GHZ FM Modulator 2GHz rf digital modulators ic 50E08 stub tuner matching 500E	PDF
TRANSISTOR zo 109 ma Abstract: transistor zo 109 transistor 86 IC 7585 midium power uhf transistor B15V140 microwave transistor ZO 109 transistor Text: BIPOLARICS, INC. Part Number B15V140 MEDIUM POWER SILICON MICROWAVE TRANSISTOR PRODUCT DATA SHEET DESCRIPTION AND APPLICATIONS: FEATURES: • Bipolarics' B15V140 is a high performance silicon bipolar transistor intended for medium power linear and Class C	Original	B15V140 B15V140 OT-223 OT-103 TRANSISTOR zo 109 ma transistor zo 109 transistor 86 IC 7585 midium power uhf transistor microwave transistor ZO 109 transistor	PDF
Untitled Abstract: No abstract text available Text: DATA SHEET SILICON TRANSISTOR 2SC4093 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD DESCRIPTION The 2S C 4 0 9 3 is an NPN silicon epitaxial transistor designed for low PACKAGE DIMENSIONS Units: mm noise amplifier at VH F, U H F and C A TV band.	OCR Scan	2SC4093 4093-T S22e-FREQUENCY	PDF

bfr106 Abstract: No abstract text available Text: • D02S20D 23T « a p x Philips S e m i c o n d u c t o r s _ Product specification AMER PHILIPS/ DIS CRETE b?E NPN 5 GHz wideband transistor DESCRIPTION c BFR106 PINNING NPN silicon planar epitaxial transistor In a plastic SOT23	OCR Scan	D02S20D BFR106 bfr106	PDF
Transistor TT 2144 Abstract: Sii 9573 2907 pnp transistor NPN/Transistor TT 2144 Sii 9024 22E09 Text: HFA3046, HFA3096, HFA3127, HFA3128 H a r r is S E M I C O N D U C T O R March 1998 Ultra High Frequency Transistor Arrays Features Description • NPN Transistor f r . 8GHz • NPN Current Gain (hpE).	OCR Scan	HFA3046, HFA3096, HFA3127, HFA3128 HFA3127 HFA3128 HFA3046 Transistor TT 2144 Sii 9573 2907 pnp transistor NPN/Transistor TT 2144 Sii 9024 22E09	PDF
2SC2530 Abstract: No abstract text available Text: January 1990 Edition 1.1 FUJITSU PRODUCT PROFILE - 2SC2530 Silicon High Speed Power Transistor DESCRIPTION T h e 2S C 2 5 3 0 is a silicon N P N M .C .*H e ad a m p lifie r use transistor fabricated w ith Fujitus's unique Ring E m itte r Transistor R E T technology. R E T devices are	OCR Scan	2SC2530 300ns 2SC2530	PDF
L-Band 1200-1400 MHz Abstract: No abstract text available Text: MICROWAVE POWER TRANSISTOR PH1214-30 • 5t,422Q5 oaaaaat, mto n/A-con p M M M /A / A -C - C iO M P H I. I N C . b3E D o h Am hap The PHI 214-30 is an internally matched high power transistor designed for long pulse or CW applications from 1200 to 1400 MHz. Internal matching both at the	OCR Scan	PH1214-30 422Q5 L-Band 1200-1400 MHz	PDF
transistor ITT 2907 Abstract: transistor itt 975 MC 931 transistor 24GHz UHF transistor band pass filter 2GHz 7812 a Text: Ü Î H U S E M I C O N D U C T O R U A R R HFA3101 I S Gilbert Cell UHF Transistor Array Ju ly 1995 Features Description • High Gain Bandwidth Product fT .10GHz The HFA3101 is an all N PN transistor array configured as a • High Pow er Gain Bandwidth P r o d u c t .5GHz	OCR Scan	HFA3101 HFA3101 10GHz 15dBc 28dBc 22dBc 76MHz 825MHz 50MHz transistor ITT 2907 transistor itt 975 MC 931 transistor 24GHz UHF transistor band pass filter 2GHz 7812 a	PDF
TRANSISTOR C 557 B Abstract: BFT25 transistor 1548 b Text: bbS3T31 Philips Sem iconductors Q0E?53bD bTS ^BAPX - N AUER P H I L I P S / D I S C R E T E Product specification b?E ]> NPN 2 GHz wideband transistor DESCRIPTION c BFT25 PINNING NPN transistor in a plastic SO T23 envelope. PIN It Is primarily intended for use in RF	OCR Scan	bbS3T31 BFT25 TRANSISTOR C 557 B BFT25 transistor 1548 b	PDF
D 1437 transistor Abstract: No abstract text available Text: DATA SHEET SILICON TRANSISTOR 2SC5004 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2 S C 5004 is a low supply voltage transistor designed for UHF PACKAGE DIMENSIONS in m illim e te rs OSC/M IX. It is suitable for a high density surface mount assembly since the	OCR Scan	2SC5004 D 1437 transistor	PDF
NE24300 Abstract: NE243187 transistor 81 110 w 63 NE243287 NE243188 NE243 NE243288 transistor 81 110 w 85 NE243499 NE24318 Text: N E C / SbE D C A L IF O R N IA b*4274m 00D2371 31b «NECC H " '3 3 > - 0 S NEC NPN MEDIUM POWER OSCILLATOR TRANSISTOR NE243 SERIES FEATURES DESCRIPTION AND APPLICATIONS • HIGH OSCILLATOR POWER OUTPUT: 630 mW TYP at 7.5 GHz The NE243 NPN series transistor is designed for oscillator	OCR Scan	b4E7414 00D2371 NE243 NE24300 NE243187 NE243188 NE243287 NE243288 transistor 81 110 w 63 transistor 81 110 w 85 NE243499 NE24318	PDF
2N2222A 338 Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931 Text: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK	OCR Scan	2CY17 2CY18 2CY19 2CY20 2CY21 500MA 500MA 2N2222A 338 TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931	PDF
y51 h 120c Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711 Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK	OCR Scan	500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711	PDF

TRANSISTOR C 129 Search Results

TRANSISTOR C 129 Result Highlights (5)

TRANSISTOR C 129 Datasheets Context Search

ansley idc ribbon connector

234 8715

HFA3046

transistor 224-1 base collector emitter

HFA3046

MAPHST0034

transistor s11 s12 s21 s22

V 7271 U

4948 transistor bf

285-1 MAG IC

Harris HFA3101 5 GHz Gilbert cell array

kf 8715

TRANSISTOR zo 109 ma

Untitled

bfr106

Transistor TT 2144

2SC2530

L-Band 1200-1400 MHz

transistor ITT 2907

TRANSISTOR C 557 B

D 1437 transistor

NE24300

2N2222A 338

y51 h 120c