Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    TRANSISTOR C 144 Search Results

    TRANSISTOR C 144 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    CA3082 Rochester Electronics LLC Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    CA3081F Rochester Electronics LLC Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR C 144 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    234 8715

    Abstract: Ic 9430 HFA3046 HFA3046B HFA3096 HFA3096B HFA3127 HFA3127B HFA3128 HFA3128B
    Text: HFA3046, HFA3096, HFA3127, HFA3128 S E M I C O N D U C T O R Ultra High Frequency Transistor Arrays August 1996 Features Description • NPN Transistor fT . . . . . . . . . . . . . . . . . . . . . . . . 8GHz The HFA3046, HFA3096, HFA3127 and the HFA3128 are


    Original     		PDF HFA3046, HFA3096, HFA3127, HFA3128 HFA3127 HFA3128 234 8715 Ic 9430 HFA3046 HFA3046B HFA3096 HFA3096B HFA3127B HFA3128B

    HFA3046

    Abstract: NPN Monolithic Transistor Pair HFA3046B HFA3046Y HFA3096 HFA3096B HFA3096Y HFA3127 HFA3127B HFA3128
    Text: HFA3046, HFA3096, HFA3127, HFA3128 S E M I C O N D U C T O R Ultra High Frequency Transistor Array July 1995 Features Description • NPN Transistor fT . . . . . . . . . . . . . . . . . . . . . . . . . 8GHz The HFA3046, HFA3096, HFA3127 and the HFA3128 are


    Original     		PDF HFA3046, HFA3096, HFA3127, HFA3128 HFA3127 HFA3128 HFA3046 NPN Monolithic Transistor Pair HFA3046B HFA3046Y HFA3096 HFA3096B HFA3096Y HFA3127B

    transistor 224-1 base collector emitter

    Abstract: transistor 0588
    Text: SILICON TRANSISTOR NE461M02 NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER FEATURES • • PACKAGE OUTLINE M02 BOTTOM VIEW 4.5±0.1 1.6±0.2 C DESCRIPTION 0.42 ±0.06 0.42 ±0.06 0.25±0.02 3.0 PIN CONNECTIONS E: Emitter C: Collector


    Original     		PDF NE461M02 OT-89 NE461M02 24-Hour transistor 224-1 base collector emitter transistor 0588

    HFA3046

    Abstract: TYPE 85.54 542E02 542E-02
    Text: HFA3046, HFA3096, HFA3127, HFA3128 S E M I C O N D U C T O R Ultra High Frequency Transistor Arrays March 1998 Features Description • NPN Transistor fT . . . . . . . . . . . . . . . . . . . . . . . . 8GHz The HFA3046, HFA3096, HFA3127 and the HFA3128 are


    Original     		PDF HFA3046, HFA3096, HFA3127, HFA3128 HFA3127 HFA3128 HFA3046 TYPE 85.54 542E02 542E-02

    transistor s11 s12 s21 s22

    Abstract: NE856M02-T1-AZ NE856M02
    Text: SILICON TRANSISTOR NE856M02 NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER FEATURES • • PACKAGE OUTLINE M02 BOTTOM VIEW 4.5±0.1 1.6±0.2 C E B E 0.8 MIN DESCRIPTION The NE856M02 is an NPN silicon epitaxial bipolar transistor


    Original     		PDF OT-89 NE856M02 NE856M02 transistor s11 s12 s21 s22 NE856M02-T1-AZ

    Untitled

    Abstract: No abstract text available
    Text: Part Number: Integra IB2226MH110 TECHNOLOGIES, INC. Silicon Bipolar − Ultra-high fT S-Band Radar Transistor Class C Operation − High Efficiency The high power pulsed radar transistor device part number IB226MH110 is designed for S-Band radar systems operating over the


    Original     		PDF IB2226MH110 IB226MH110 IB2226MH110 IB2226MH110-REV-NC-DS-REV-NC

    sc5-S

    Abstract: RT1P144C RT1P144M RT1P144T2 RT1N144X RT1P144S RT1P144U ml021
    Text: Transistor RT1 P I 44X SERIES Transistor With Resistor For Switching Application Silicon PNP Epitaxial Type DESCRIPTION RT1P144X is a OUTLINE DRAWING one chip transistor R T iP i ^ C R T 1 P 144U with b u ilt-in bias resistor.NPN type is RT1NM4X UNIT: mm


    OCR Scan     		PDF HT1P144X RT1N144X 47kft) RT1P144TÃ RT1P144C RT1P144M O-236 sc5-S RT1P144C RT1P144M RT1P144T2 RT1N144X RT1P144S RT1P144U ml021

    transistor NEC D 822 P

    Abstract: transistor number D 2498 702 mini transistor 2SC4226-T1 NEC D 822 P 2sc4226 2SC4226-T2
    Text: DATA SHEET SILICON TRANSISTOR 2SC4226 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD D E S C R IP T IO N The 2SC4226 is a low supply voltage transistor designed for VHF, UHF low PA C K A G E D IM E N S IO N S in millimeters


    OCR Scan     		PDF 2SC4226 2SC4226 SC-70 2SC4226-T1 2SC4226-T2 transistor NEC D 822 P transistor number D 2498 702 mini transistor NEC D 822 P

    bfr106

    Abstract: No abstract text available
    Text: • D02S20D 23T « a p x Philips S e m i c o n d u c t o r s _ Product specification AMER PHILIPS/ DIS CRETE b?E NPN 5 GHz wideband transistor DESCRIPTION c BFR106 PINNING NPN silicon planar epitaxial transistor In a plastic SOT23


    OCR Scan     		PDF D02S20D BFR106 bfr106

    Transistor TT 2144

    Abstract: Sii 9573 2907 pnp transistor NPN/Transistor TT 2144 Sii 9024 22E09
    Text: HFA3046, HFA3096, HFA3127, HFA3128 H a r r is S E M I C O N D U C T O R March 1998 Ultra High Frequency Transistor Arrays Features Description • NPN Transistor f r . 8GHz • NPN Current Gain (hpE).


    OCR Scan     		PDF HFA3046, HFA3096, HFA3127, HFA3128 HFA3127 HFA3128 HFA3046 Transistor TT 2144 Sii 9573 2907 pnp transistor NPN/Transistor TT 2144 Sii 9024 22E09

    transistor d 1557

    Abstract: transistor 1558 transistor IC 1557 b germanium transistor ac 128 ML 1557 b transistor 1557 b transistor af280 Q62701-F88 900 mhz germanium diode AF 280 S
    Text: 25C » • fi235bOS GG04QÔ1 S « S I E G PNP Germanium UHF Transistor - SIEMENS À F 280 S AKTIENGESELLSCHAF “7 ^ fo r m ix e r and o s c illa to r c ir c u its up to 9 0 0 M H z 3 - / - 0 7 A F 2 8 0 S is a germanium PNP UHF planar transistor with passivated surface in lowcapacitance 50 B 3 DIN 41867 plastic package sim ilar to T 0 119. This transistor is particularly


    OCR Scan     		PDF fl235bQS 0DQ4Q81 T0119. Q62701-F88 transistor d 1557 transistor 1558 transistor IC 1557 b germanium transistor ac 128 ML 1557 b transistor 1557 b transistor af280 Q62701-F88 900 mhz germanium diode AF 280 S

    Transistor BFr 99

    Abstract: Transistor BFR 96 transistor 2sc 548
    Text: 2SC D .- . • . - , -„-,r— - . .» - - 1— — -. -■ ~. fl235bOS QQQMbbS 3 M S I E G T-V-fcJ NPN Silicon Microwave Transistor up to 2 GHz SIEMENS AKTIEN6ESELLSCHAF T -j-— BFR 14 C D ! BFR 14 C is an epitaxial NPN silicon planar microwave transistor in hermetically sealed


    OCR Scan     		PDF fl235bOS Transistor BFr 99 Transistor BFR 96 transistor 2sc 548

    D 1437 transistor

    Abstract: No abstract text available
    Text: DATA SHEET SILICON TRANSISTOR 2SC5004 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2 S C 5004 is a low supply voltage transistor designed for UHF PACKAGE DIMENSIONS in m illim e te rs OSC/M IX. It is suitable for a high density surface mount assembly since the


    OCR Scan     		PDF 2SC5004 D 1437 transistor

    NE24300

    Abstract: NE243187 transistor 81 110 w 63 NE243287 NE243188 NE243 NE243288 transistor 81 110 w 85 NE243499 NE24318
    Text: N E C / SbE D C A L IF O R N IA b*4274m 00D2371 31b «NECC H " '3 3 > - 0 S NEC NPN MEDIUM POWER OSCILLATOR TRANSISTOR NE243 SERIES FEATURES DESCRIPTION AND APPLICATIONS • HIGH OSCILLATOR POWER OUTPUT: 630 mW TYP at 7.5 GHz The NE243 NPN series transistor is designed for oscillator


    OCR Scan     		PDF b4E7414 00D2371 NE243 NE24300 NE243187 NE243188 NE243287 NE243288 transistor 81 110 w 63 transistor 81 110 w 85 NE243499 NE24318

    y51 h 120c

    Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
    Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK


    OCR Scan     		PDF 500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711

    BFR95

    Abstract: transistor b 745 DD31
    Text: Philips Semiconductors bbS3^31 0 0 3 ]iû fl4 R72 • ^ p x ^ P ro d u c ts p e c ific a tio n NPN 3.5 GHz wideband transistor BFR95 H AMER PHILIPS/DISCRETE DESCRIPTION blE D PINNING NPN resistance-stabilized transistor in a SOT5 TO-39 metal envelope, with collector connected to the case.


    OCR Scan     		PDF BFR95 BFR95 transistor b 745 DD31

    bfr 547

    Abstract: Transistor BFR 93 PS229 Transistor BFR 97 Transistor BFr 99 BFR14C Q62702-F543 S-12 Transistor BFR 96 Transistor BFR 39
    Text: —— SSC D • - fl235bOS 0QQ4bfc>2 3 M S I E G NPN Silicon Microwave Transistor up to 2 GHz SIEMENS AKTIENGESELLSCHAF T BFR 14 C D ! BFR 14 C is an epitaxial NPN silicon planar microwave transistor in hermetically sealed metal ceramic 200 mil package similar to TO 120. It is outstanding for a low noise


    OCR Scan     		PDF fl235bOS bfr 547 Transistor BFR 93 PS229 Transistor BFR 97 Transistor BFr 99 BFR14C Q62702-F543 S-12 Transistor BFR 96 Transistor BFR 39

    lt 715 1111

    Abstract: st zo 607
    Text: PRELIMINARY DATA SHEET SILICON TRANSISTOR NPN EPITAXIAL SILICON TRANSISTOR 4-PIN MINI MOLD FEA TU R E • P A C K A G E DIMENSIONS in mm High gain, low noise • Small reverse transfer capacitance • C an operate at low voltage ¥ A B S O LU TE MAXIMUM RATINGS (Ta = 25 °C)


    OCR Scan     		PDF

    nec 2410

    Abstract: transistor NEC D 587 2410 nec
    Text: DATA SHEET SILICON TRANSISTOR 2SC4959 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD FEATURES • Low Noise, High Gain • Low Voltage Operation • Low Feedback Capacitance C re PACKAGE DIM ENSIONS in m illim eters 2.1


    OCR Scan     		PDF 2SC4959 4959-T 4959-T2 nec 2410 transistor NEC D 587 2410 nec

    pulse 01940

    Abstract: NEC IC D 553 C 5598 transistor transistor D 2581 NEC 2581 30460
    Text: DATA SHEET SILICON TRANSISTOR 2SC4954 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD FEATURES • Low Noise, High Gain • Low V oltage Operation • Low Feedback Capacitance C re PACKAGE DIMENSIONS in millimeters 2 .8 ± 0.2


    OCR Scan     		PDF 2SC4954 4954-T sh527 pulse 01940 NEC IC D 553 C 5598 transistor transistor D 2581 NEC 2581 30460

    nec 2410

    Abstract: pulse 01940
    Text: DATA SHEET SILICON TRANSISTOR 2SC4959 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD FEATURES • Low Noise, High Gain • Low Voltage Operation • Low Feedback Capacitance C re PACKAGE DIMENSIONS in m illim eters •


    OCR Scan     		PDF 2SC4959 2SC4959-T1 4959-T2 nec 2410 pulse 01940

    IC 811 0400 01

    Abstract: TRANSISTOR 2SC 950
    Text: DATA SHEET SILICON TRANSISTOR 2SC4958 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD FEATURES • Low Noise, High Gain • Low Voltage Operation • Low Feedback Capacitance C re PACKAGE DIM ENSIONS in m illim eters , 1.25 ±0.1


    OCR Scan     		PDF 2SC4958 4958-T2 Par370 IC 811 0400 01 TRANSISTOR 2SC 950

    nec b 536 transistor

    Abstract: NEC B 536
    Text: DATA SHEET SILICON TRANSISTOR 2SC4958 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD FEATURES • Low Noise, High Gain • Low Voltage Operation • Low Feedback Capacitance C re PACKAGE DIMENSIONS in m illim e te rs 2.1


    OCR Scan     		PDF 2SC4958 nec b 536 transistor NEC B 536

    OXF*9

    Abstract: No abstract text available
    Text: TLX* HEW LETT WSEm P A C K A R D Low Current, High Performance NPN Silicon Bipolar Transistor Technical Data AT-32011 AT-32033 Features Description • High Performance Bipolar Transistor Optimized for Low Current, Low Voltage Operation • 900 MHz Performance:


    OCR Scan     		PDF AT-32011 AT-32033 AT-32011: AT-32033: OT-23 OT-143 AT-32033 OT-23, OXF*9