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    TRANSISTOR C 2290 Search Results

    TRANSISTOR C 2290 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR C 2290 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IRF1010 E DATASHEET

    Abstract: IRF1010 IRG4BC30FD1 igbt rectifier circuit IRG4BC
    Text: PD - 94773 IRG4BC30FD1 Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH HYPERFAST DIODE C VCES = 600V Features • Fast: optimized for medium operating frequencies 1-5 kHz in hard switching, >20kHz in resonant mode . • Generation 4 IGBT design provides tighter


    Original     		PDF IRG4BC30FD1 20kHz O-220AB char10 FD100H06A5. O-220 IRF1010 E DATASHEET IRF1010 IRG4BC30FD1 igbt rectifier circuit IRG4BC

    swiching transistor

    Abstract: 9561 600v 8A ultra fast recovery diode to220
    Text: PD - 95614 IRG4BC30FD1PbF Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH HYPERFAST DIODE C VCES = 600V Features • Fast: optimized for medium operating frequencies 1-5 kHz in hard switching, >20kHz in resonant mode . • Generation 4 IGBT design provides tighter


    Original     		PDF IRG4BC30FD1PbF 20kHz O-220AB Minimi10 FD100H06A5. O-220 swiching transistor 9561 600v 8A ultra fast recovery diode to220

    Untitled

    Abstract: No abstract text available
    Text: PD - 95614A IRG4BC30FD1PbF Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH HYPERFAST DIODE C VCES = 600V Features • Fast: optimized for medium operating frequencies 1-5 kHz in hard switching, >20kHz in resonant mode . • Generation 4 IGBT design provides tighter


    Original     		PDF 5614A IRG4BC30FD1PbF 20kHz O-220AB FD100H06A5.

    Untitled

    Abstract: No abstract text available
    Text: PD - 94773 IRG4BC30FD1 Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH HYPERFAST DIODE C VCES = 600V Features • Fast: optimized for medium operating frequencies 1-5 kHz in hard switching, >20kHz in resonant mode . • Generation 4 IGBT design provides tighter


    Original     		PDF IRG4BC30FD1 20kHz O-220AB FD100H06A5. O-220

    IRF1010

    Abstract: IRG4BC30FD1 TO220AB IGBT
    Text: PD - 94773 IRG4BC30FD1 Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH HYPERFAST DIODE C VCES = 600V Features • Fast: optimized for medium operating frequencies 1-5 kHz in hard switching, >20kHz in resonant mode . • Generation 4 IGBT design provides tighter


    Original     		PDF IRG4BC30FD1 20kHz O-220AB FD100H06A5. O-220 IRF1010 IRG4BC30FD1 TO220AB IGBT

    555 triangular wave

    Abstract: IRG4BC30FD1PBF
    Text: PD - 95614 IRG4BC30FD1PbF Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH HYPERFAST DIODE C VCES = 600V Features • Fast: optimized for medium operating frequencies 1-5 kHz in hard switching, >20kHz in resonant mode . • Generation 4 IGBT design provides tighter


    Original     		PDF IRG4BC30FD1PbF 20kHz O-220AB FD100H06A5. O-220 555 triangular wave IRG4BC30FD1PBF

    Untitled

    Abstract: No abstract text available
    Text: PD - 95614A IRG4BC30FD1PbF Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH HYPERFAST DIODE C VCES = 600V Features • Fast: optimized for medium operating frequencies 1-5 kHz in hard switching, >20kHz in resonant mode . • Generation 4 IGBT design provides tighter


    Original     		PDF 5614A IRG4BC30FD1PbF 20kHz O-220AB FD100H06A5.

    Untitled

    Abstract: No abstract text available
    Text: Green Product SDP F 12N06 S a mHop Microelectronics C orp. Ver 1.1 N-Channel Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for low R DS(ON). PRODUCT SUMMARY V DSS ID R DS(ON) ( Ω) Typ 600V 12A 0.61 @ VGS=10V Rugged and reliable.


    Original     		PDF 12N06 O-220 O-220F O-220F O-220 SDP12N06 SDF12N06

    infineon power cycling igbt3

    Abstract: IGBT4 snap-off diode infineon igbt3 1200v infineon power cycling curves infineon igbt4 1200v Measurement of stray inductance for IGBT 2003N igbt simulation IGBT2
    Text: 1200V IGBT4 -High Power- a new Technology Generation with Optimized Characteristics for High Current Modules M. Bäßler1, P.Kanschat1, F.Umbach2, C. Schaeffer3 1 Infineon Technologies AG, Max Planck Str.5, D-59581 Warstein Germany, Tel +49-2902-764-2290,


    Original     		PDF D-59581 200V-Trench- 1998-Kyoto 2003N 00V-IGBT³ 2004-N infineon power cycling igbt3 IGBT4 snap-off diode infineon igbt3 1200v infineon power cycling curves infineon igbt4 1200v Measurement of stray inductance for IGBT igbt simulation IGBT2

    2N2369AU

    Abstract: No abstract text available
    Text: MSR2N2369AUA Screened Levels: MSR Rad Hard NPN Silicon High Speed Switching Transistor Screened per MIL-PRF-19500 & ESCC 22900 QPL RANGE and RAD LEVEL Radiation Level TID ELDRS MSR2N2369AUA 100 Krad 100 Krad DESCRIPTION This RHA level high speed NPN switching transistor, 2N2369A in a UA package, is ideal to


    Original     		PDF MSR2N2369AUA MIL-PRF-19500 2N2369A EEE-INST-002 T4-LDS-0338-2, 2N2369AU

    Untitled

    Abstract: No abstract text available
    Text: MSR2N2907AUA Screened Levels: MSR Rad Hard PNP Silicon Switching Transistor Screened per MIL-PRF-19500 & ESCC 22900 QPL RANGE and RAD LEVEL Radiation Level TID ELDRS MSR2N2907AUA 100 Krad 100 Krad DESCRIPTION This RHA level PNP switching transistor, 2N2907A device in a UA package, is ideal to drive


    Original     		PDF MSR2N2907AUA MIL-PRF-19500 2N2907A EEE-INST-002 T4-LDS-0339-1,

    Untitled

    Abstract: No abstract text available
    Text: MSR2N2222AUA Screened Levels: MSR Rad Hard NPN Silicon Switching Transistor Screened per MIL-PRF-19500 & ESCC 22900 QPL RANGE and RAD LEVEL Radiation Level TID ELDRS MSR2N2222AUA 100 Krad 100 Krad DESCRIPTION This RHA level NPN switching transistor, MSR2N2222AUA device in a UA package, is ideal to


    Original     		PDF MSR2N2222AUA MIL-PRF-19500 MSR2N2222AUA EEE-INST-002 T4-LDS-0337-1,

    Untitled

    Abstract: No abstract text available
    Text: MVR2N2222AUA Screened Levels: MVR Rad Hard NPN Silicon Switching Transistor Screened per MIL-PRF-19500 & ESCC 22900 QPL RANGE and RAD LEVEL Radiation Level TID ELDRS MVR2N2222AUA 100 Krad 100 Krad DESCRIPTION This RHA level NPN switching transistor, MVR2N2222AUA device in a UA package, is ideal to


    Original     		PDF MVR2N2222AUA MIL-PRF-19500 MVR2N2222AUA EEE-INST-002 T4-LDS-0331-1,

    Untitled

    Abstract: No abstract text available
    Text: MSR2N3700UB Screened Levels: MSR Rad Hard Low Power NPN Silicon Transistor Screened per MIL-PRF-19500 & ESCC 22900 QPL RANGE and RAD LEVEL Radiation Level TID ELDRS MSR2N3700UB 100 Krad 100 Krad DESCRIPTION This RHA level low power NPN switching transistor, 2N3700 device in a UB and UBC package,


    Original     		PDF MSR2N3700UB MIL-PRF-19500 2N3700 EEE-INST-002 com28 T4-LDS-0340-1,

    2N2907AUB

    Abstract: No abstract text available
    Text: MSR2N2907AUB / UBC Screened Levels: MSR Rad Hard PNP Silicon Switching Transistor Screened per MIL-PRF-19500 & ESCC 22900 QPL RANGE and RAD LEVEL Radiation Level TID ELDRS MSR2N2907AUB 100 Krad 100 Krad DESCRIPTION This RHA level PNP switching transistor, 2N2907A device in a UB package, is ideal to drive


    Original     		PDF MSR2N2907AUB MIL-PRF-19500 MSR2N2907AUB 2N2907A EEE-INST-002 T4-LDS-0339-2, 2N2907AUB

    Untitled

    Abstract: No abstract text available
    Text: MSR2N2222AUB / UBC Screened Levels: MSR Rad Hard NPN Silicon Switching Transistor Screened per MIL-PRF-19500 & ESCC 22900 QPL RANGE and RAD LEVEL Radiation Level TID ELDRS MSR2N2222AUB 100 Krad 100 Krad DESCRIPTION This RHA level high speed switching NPN transistor, 2N2222A in a UB or UBC ceramic


    Original     		PDF MSR2N2222AUB MIL-PRF-19500 MSR2N2222AUB 2N2222A EEE-INST-002 T4-LDS-0337-2,

    Untitled

    Abstract: No abstract text available
    Text: MSR2N3700 Qualified Levels: MSR Rad Hard Low Power NPN Silicon Transistor Screened per MIL-PRF-19500 & ESCC 22900 QPL RANGE and RAD LEVEL Radiation Level TID ELDRS MSR2N3700 100 Krad 100 Krad DESCRIPTION This RHA level low power NPN switching transistor, 2N3700 device in a TO-206AA package,


    Original     		PDF MSR2N3700 MIL-PRF-19500 2N3700 O-206AA EEE-INST-002 T4-LDS-0340,

    Untitled

    Abstract: No abstract text available
    Text: MSR2N2369AUB / UBC Screened Levels: MSR Rad Hard NPN Silicon High Speed Switching Transistor Screened per MIL-PRF-19500 & ESCC 22900 QPL RANGE and RAD LEVEL Radiation Level TID ELDRS MSR2N2369AUB 100 Krad 100 Krad DESCRIPTION This RHA level NPN switching transistor 2N2369A device in a UB and UBC package is ideal to


    Original     		PDF MSR2N2369AUB MIL-PRF-19500 MSR2N2369AUB 2N2369A EEE-INST-002 T4-LDS-0338-3,

    Untitled

    Abstract: No abstract text available
    Text: MSR2N2222A L Qualified Levels: MSR Rad Hard NPN Silicon Switching Transistor Screened per MIL-PRF-19500 & ESCC 22900 QPL RANGE and RAD LEVEL Radiation Level TID ELDRS MSR2N2222A(L) 100 Krad 100 Krad DESCRIPTION This RHA level NPN switching transistor, MSR2N2222A in a TO-206AA package, is ideal to


    Original     		PDF MSR2N2222A MIL-PRF-19500 O-206AA EEE-INST-002 microsemi00 T4-LDS-0337,

    Untitled

    Abstract: No abstract text available
    Text: MVR2N2222A L Qualified Levels: MVR Rad Hard NPN Silicon Switching Transistor Screened per MIL-PRF-19500 & ESCC 22900 QPL RANGE and RAD LEVEL Radiation Level TID ELDRS MVR2N2222A(L) 100 Krad 100 Krad DESCRIPTION This RHA level NPN switching transistor, MVR2N2222A device in a TO-206AA package, is


    Original     		PDF MVR2N2222A MIL-PRF-19500 O-206AA EEE-INST-002 T4-LDS-0331,

    2SA1444 equivalent

    Abstract: BA1F4M transistor equivalent table POWER MOS FET 2sj 2sk 2sd882 equivalent Equivalent to transistor 2sc945 2SA1206 TRANSISTOR equivalent 2SC1845 equivalent 2SK type 2SD1694 equivalent
    Text: CD-ROM Transistor CD-ROM X13769XJ2V0CD00 08-1 Transistor Quick Reference by Package TO–92 • TO-92 Type Transistor VCEO V ~15 ~30 ~50 ~70 ~100 ~150 ~200 ~250 2SA1376 2SA1376A 2SC3478 2SC3478A 2SA1544 ~400 IC (A) ~20 m 2SC1674 2SA1206∗∗ 2SA988 2SA992


    Original     		PDF X13769XJ2V0CD00 2SA1206 2SC1674 2SA988 2SA992 2SC1841 2SC1845 2SA733 2SA990 2SC945 2SA1444 equivalent BA1F4M transistor equivalent table POWER MOS FET 2sj 2sk 2sd882 equivalent Equivalent to transistor 2sc945 2SA1206 TRANSISTOR equivalent 2SC1845 equivalent 2SK type 2SD1694 equivalent

    transistor t 2190

    Abstract: 2110 transistor AS-2110 transistor 1740 UMTS transistor transistor C 2240 SiGe PNP transistor ultra low noise transistor transistor cross reference chart SiGe PNP
    Text: A p p l i c a t i o n N o t e , R e v . 1 . 2 , A ug us t 2 00 7 A p p li c a t i o n N o t e N o . 1 1 6 B F R 7 4 0 L 3 U l tr a Lo w N o i s e S i G e : C R F T r an s i s t o r a s 2 1 1 0 - 21 7 0 M H z U M T S L o w N o i s e A m p l i fi e r R F & P r o t e c ti o n D e v i c e s


    Original     		PDF BFR740L3 transistor t 2190 2110 transistor AS-2110 transistor 1740 UMTS transistor transistor C 2240 SiGe PNP transistor ultra low noise transistor transistor cross reference chart SiGe PNP

    smd transistor js

    Abstract: smd transistor gs f BSH102 smd transistor 608
    Text: Product specification Philips Semiconductors N-channel enhancement mode MOS transistor BSH102 FEATURES PINNING - SOT23 • Very low threshold PIN SYMBOL • High-speed switching 1 • No secondary breakdown 2 g s DESCRIPTION source • Direct interface to C-MOS, TTL etc.


    OCR Scan     		PDF BSH102 smd transistor js smd transistor gs f BSH102 smd transistor 608

    TEXAS 2N3055

    Abstract: 2N3055 transistor 2N3055 2N3055 silicon
    Text: TYPE 2N3055 N-P-N SINGLE-DIFFUSED MESA SILICON POWER TRANSISTOR FOR POWER-AMPLIFIiR APPLICATIONS • 115 W a t 25°C Case T e m p e ra tu re • Max lc of 15 A • Min fhf* of 20 kHz * m e c h a n ica l d a ta ALL JEDEC TO-3 D IM EN SIO N S A N D N O TES ARE APPLICABLE


    OCR Scan     		PDF 2N3055 TEXAS 2N3055 2N3055 transistor 2N3055 2N3055 silicon