Application Notes
Abstract: matched pair JFET N CHANNEL jfet Low Noise Audio Amplifier jfet transistor for VCR "voltage controlled resistor" JFET APPLICATIONS igfet jfet differential transistor jfet p channel switch FET differential amplifier circuit
Text: Databook.fxp 1/13/99 2:09 PM Page H-2 H-2 01/99 Junction Field Effect Transistors InterFET Application Notes Introduction T he field effect transistor was actually conceived before the more familiar bipolar transistor. Due to limited technology and later the
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2N5912
Abstract: 2N5911 B-23 SMP5911 SMP5912 NJ-30
Text: Databook.fxp 1/14/99 11:31 AM Page B-23 B-23 01/99 2N5911, 2N5912 Dual N-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25¡C ¥ Wideband Differential Amplifiers Continuous Forward Gate Current Total Device Power Dissipation
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2N5911,
2N5912
2N5911
NJ30L
NJ36D
SMP5911,
SMP5912
2N5912
2N5911
B-23
SMP5911
SMP5912
NJ-30
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Untitled
Abstract: No abstract text available
Text: Databook.fxp 1/13/99 2:09 PM Page iv iv 01/99 High-Reliability Process Flows I nterFET Corporation has served the military and industrial highreliability junction field effect transistor market since 1984. There are standard high-reliability processing options available on most
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MIL-STD-883,
MIL-S-19500
dev006
PB-TS-EL01
PB-FT-0000
QB-IN-GN04
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2N4338
Abstract: 2N4339
Text: Databook.fxp 1/13/99 2:09 PM Page B-11 B-11 01/99 2N4338, 2N4339 N-Channel Silicon Junction Field-Effect Transistor ¥ ¥ ¥ ¥ Absolute maximum ratings at TA = 25¡C Audio Amplifiers Small Signal Amplifiers Voltage-Controlled Resistors Current Limiters & Regulators
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2N4338,
2N4339
2N4338
2N4338
2N4339
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2N4221
Abstract: 2N4222A 2N4220 2N4220A 2N4221A 2N4222 2N4221 transistor NJ16 NJ32
Text: Databook.fxp 1/13/99 2:09 PM Page B-10 B-10 01/99 2N4220, 2N4220A, 2N4221, 2N4221A, 2N4222, 2N4222A N-Channel Silicon Junction Field-Effect Transistor ¥ ¥ ¥ ¥ Absolute maximum ratings at TA = 25¡C Mixers Oscillators VHF Amplifiers Small Signal Amplifiers
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2N4220,
2N4220A,
2N4221,
2N4221A,
2N4222,
2N4222A
2N4220
2N4220A
2N4221
2N4222A
2N4220
2N4220A
2N4221A
2N4222
2N4221 transistor
NJ16
NJ32
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transistor A3 F45
Abstract: transistor a4 f45 transistor A2 F45
Text: Databook.fxp 1/13/99 2:09 PM Page F-44 F-44 01/99 NJ1800D Process Silicon Junction Field-Effect Transistor ¥ Ultra Low-Noise Pre-Amplifier D Absolute maximum ratings at TA = 25¡C Gate Current, Ig Operating Junction Temperature, Tj Storage Temperature, Ts
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NJ1800D
transistor A3 F45
transistor a4 f45
transistor A2 F45
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IFN6449
Abstract: IFN6450
Text: Databook.fxp 1/13/99 2:09 PM Page B-48 B-48 01/99 IFN6449, IFN6450 N-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25¡C ¥ High Voltage Reverse Gate Source Voltage Reverse Gate Drain Voltage Continuous Forward Gate Current
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IFN6449,
IFN6450
IFN6449
IFN6449
IFN6450
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2N5460
Abstract: 2n5462 2N5461 transistor 2N5461 SMP5460 SMP5461 SMP5462
Text: Databook.fxp 1/13/99 2:09 PM Page B-21 B-21 01/99 2N5460, 2N5461, 2N5462 P-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at 25¡C ¥ Audio Amplifiers ¥ General Purpose Amplifiers Reverse Gate Source & Reverse Gate Drain Voltage
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2N5460,
2N5461,
2N5462
2N5460
226AA
SMP5460,
SMP5461,
SMP5462
2N5460
2n5462
2N5461
transistor 2N5461
SMP5460
SMP5461
SMP5462
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SMP5911
Abstract: SMP5912
Text: Databook.fxp 1/14/99 11:32 AM Page B-64 B-64 01/99 SMP5911, SMP5912 Dual N-Channel Silicon Junction Field-Effect Transistor ¥ Wideband Differential Amplifiers At 25°C free air temperature: SMP5911 SMP5912 Static Electrical Characteristics Min Min Gate Source Breakdown Voltage
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SMP5911,
SMP5912
SMP5911
NJ30L
SMP5911
SMP5912
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2N5911
Abstract: 2N5912 IFN5911 IFN5912 SMP5911 SMP5912
Text: Databook.fxp 1/13/99 2:09 PM Page F-16 F-16 01/99 NJ30L Process Silicon Junction Field-Effect Transistor ¥ Low-Noise, High Gain Amplifier G Absolute maximum ratings at TA = 25¡C Gate Current, Ig Operating Junction Temperature, Tj Storage Temperature, Ts
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NJ30L
2N5911,
2N5912
IFN5911,
IFN5912
SMP5911
SMP5912
2N5911
2N5912
IFN5911
IFN5912
SMP5911
SMP5912
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transistor F13
Abstract: transistor j210 2N5397 equivalent 2N5397 2N5398 J210 J211 J212
Text: Databook.fxp 1/13/99 2:09 PM Page F-12 F-12 01/99 NJ26L Process Silicon Junction Field-Effect Transistor ¥ Low-Noise, High Gain Amplifier G Absolute maximum ratings at TA = 25¡C Gate Current, Ig Operating Junction Temperature, Tj Storage Temperature, Ts
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NJ26L
2N5397,
2N5398
30ion
transistor F13
transistor j210
2N5397 equivalent
2N5397
2N5398
J210
J211
J212
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2N3823 equivalent
Abstract: transistor 2N3824 2N3821 2N3822 equivalent 2N5021 maximum idss transistor 2N5460 transistor 2N5461 2N3822 2N3823
Text: Databook.fxp 1/13/99 2:09 PM Page F-18 F-18 01/99 NJ32 Process Silicon Junction Field-Effect Transistor ¥ General Purpose Amplifier G Absolute maximum ratings at TA = 25¡C Gate Current, Ig Operating Junction Temperature, Tj Storage Temperature, Ts 10 mA
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2N3821,
2N3822
2N3823,
2N3824
2N4222,
2N4222A
2N3823 equivalent
transistor 2N3824
2N3821
2N3822 equivalent
2N5021
maximum idss transistor
2N5460
transistor 2N5461
2N3822
2N3823
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2N4341
Abstract: 2N4338 2N4339 2N4340 NJ16 SMP4340 SMP4341 to236AB 2n4338
Text: Databook.fxp 1/13/99 2:09 PM Page B-11 B-11 01/99 2N4338, 2N4339 N-Channel Silicon Junction Field-Effect Transistor ¥ ¥ ¥ ¥ Absolute maximum ratings at TA = 25¡C Audio Amplifiers Small Signal Amplifiers Voltage-Controlled Resistors Current Limiters & Regulators
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2N4338,
2N4339
2N4338
2N4341
2N4338
2N4339
2N4340
NJ16
SMP4340
SMP4341
to236AB 2n4338
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IF3601
Abstract: 2N6449 2N6450 IF9030 interfet B-28 IF140 IF140A IF142 IF1320
Text: Databook.fxp 1/13/99 2:09 PM Page B-24 B-24 01/99 2N6449, 2N6450 N-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25¡C ¥ High Voltage Reverse Gate Source Voltage Reverse Gate Drain Voltage Continuous Forward Gate Current
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2N6449,
2N6450
2N6449
IF3601
2N6449
2N6450
IF9030
interfet
B-28
IF140
IF140A
IF142
IF1320
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RF POWER TRANSISTOR NPN
Abstract: mitsubishi RF POWER TRANSISTOR Mitsubishi databook 2SC3628 T-46
Text: MITSUBISHI RF POWER TRANSISTOR 2SC3628 NPN EPITAXIAL PLANAR T Y P E DISCRETIO N OUTLINE DRAWING 2SC3628 is a silicon NPN epitaxial planar type transistor designed fo r RF power amplifiers in VHF band mobile radio applications. Dimensions in mm FEATURES •
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2SC3628
175MHz
175MHz.
RF POWER TRANSISTOR NPN
mitsubishi RF POWER TRANSISTOR
Mitsubishi databook
T-46
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI RF POWER TRANSISTOR 2SC3628 NPN EPITAXIAL PLANAR T Y P E DISCRETION OUTLINE DRAWING 2SC3628 is a silicon NPN epitaxial planar type transistor designed fo r RF power amplifiers in VHF band mobile radio applications. Dim ensions in m m FEATURES •
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2SC3628
2SC3628
175MHz
175MHz.
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Mitsubishi transistor databook
Abstract: No abstract text available
Text: MITSUBISHI RF POWER TRANSISTOR 2SC3022 NPN E P IT A X IA L PLANAR T Y P E DESCRIPTION 2SC3022 is a silicon NPN epitaxial planar type transistor specifi cally designed for UHF high power amplifier applications. OUTLINE DRAWING Dimensions in mm FEATURES •
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2SC3022
2SC3022
520MHz,
Mitsubishi transistor databook
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI RF POWER TRANSISTOR 2SC3379 NPN EPITAXIAL PLANAR TY P E DESCRIPTION OUTLINE DRAWING Dim ensions in mm 2SC3379 is a silicon NPN epitaxial planar type transistor specifi cally designed for UHF power amplifier applications. FEATURES • High power gain: G p eè6.7dB
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2SC3379
2SC3379
520MHz,
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LG color tv Circuit Diagram schematics
Abstract: free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007
Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY
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3186J
LG color tv Circuit Diagram schematics
free transistor equivalent book 2sc
NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG
RCA SK CROSS-REFERENCE
KIA 4318
transistor cs 9012
Til 322A
sx3704
diode d.a.t.a. book
1N1007
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IC HXJ 2038
Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI RF POWER TRANSISTOR 2SC3629 NPN EPITA XIA L PLANAR T Y P E DESCRIPTION OUTLINE DRAWING 2SC3629 is a silicon NPN epitaxial planar type transistor designed for R F power amplifiers in U H F band 7.2 volts operation applications. C 1 .5 M A X Dimensions in mm
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2SC3629
2SC3629
520MHz,
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package drawing T46
Abstract: 2SC3404 1p TRANSISTOR RF POWER TRANSISTOR NPN vhf Mitsubishi databook T-46 npn transistor 80mw
Text: MITSUBISHI RF POWER TRANSISTOR 2SC3404 NPN EPITAXIAL PLANAR T Y P E DESCRIPTION OUTLINE DRAWING 2S C 3404 is a silicon NPN epitaxial planar type transistor specifi cally designed for VHF power amplifier applications. C 1 .5 M A X D im e n s io n s in m m
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2SC3404
2SC3404
75MHz,
175MHz,
package drawing T46
1p TRANSISTOR
RF POWER TRANSISTOR NPN vhf
Mitsubishi databook
T-46
npn transistor 80mw
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Untitled
Abstract: No abstract text available
Text: Q D 1 7b S f i MITSUBISHI RF POWER TRANSISTOR TIS 2SC3022 NPN EP IT A X IA L PLANAR T Y P E DESCRIPTION 2SC3022 is a silicon NPN epitaxial planar type transistor specifi cally designed for UHF high power amplifier applications. OUTLINE DRAWING Dim e n sio n s in mm
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2SC3022
2SC3022
520MHz,
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transistor databook
Abstract: No abstract text available
Text: This Power Bipolar Transistor DATABOOK contains data on the range of the Company’s discrete BI POLAR POWER devices for applications in indu strial, automotive, computer, telecommunication, professional, and consumer equipment. Introduced for the first time are ETD transistors for
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ISOWATT220,
ISOWATT218,
transistor databook
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