TRANSISTOR J17 Search Results

TRANSISTOR J17 Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

TRANSISTOR J17 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
TRANSISTORS BJT bc548 Abstract: jfet selection guide J210 D2 PAK PN4302 TN2102A BJT BC546 FJN965 MPF102 JFET data sheet KSP13 ks3302 Text: Small Signal Transistor and JFET Selection Guide Small Signal Transistor and JFET Selection Guide Analog Discrete Interface & Logic Optoelectronics August 2002 Across the board. Around the world. Small Signal Transistor and JFET Selection Guide August 2002	Original	PDF	OT-623F OT-323 OT-23 OT-89 OT-223 O-92S O-226AE O-92L TRANSISTORS BJT bc548 jfet selection guide J210 D2 PAK PN4302 TN2102A BJT BC546 FJN965 MPF102 JFET data sheet KSP13 ks3302
diode BY239 Abstract: BD239 BY239 LLE16045X Text: DISCRETE SEMICONDUCTORS DATA SHEET LLE16045X NPN microwave power transistor Product specification Supersedes data of September 1994 1997 Feb 18 Philips Semiconductors Product specification NPN microwave power transistor FEATURES • Diffused emitter ballasting resistors	Original	PDF	LLE16045X SCA53 127147/00/02/pp12 diode BY239 BD239 BY239 LLE16045X
equivalent of SL 100 NPN Transistor Abstract: TRANSISTOR cq 817 TRansistor 648 SL 100 NPN Transistor BDT239 05API philips ferrite material specifications BY239 LLE18040X 5344 TRANSISTOR Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D159 LLE18040X NPN microwave power transistor Product specification Supersedes data of September 1994 1999 Apr 22 Philips Semiconductors Product specification NPN microwave power transistor LLE18040X FEATURES QUICK REFERENCE DATA	Original	PDF	M3D159 LLE18040X SCA63 125002/00/02/pp12 equivalent of SL 100 NPN Transistor TRANSISTOR cq 817 TRansistor 648 SL 100 NPN Transistor BDT239 05API philips ferrite material specifications BY239 LLE18040X 5344 TRANSISTOR
philips ferrite 4330-030 Abstract: philips ferrite 4b1 TRansistor 648 BY239 BDT91 LLE18010X j160 capacitor philips Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D159 LLE18010X NPN microwave power transistor Product specification Supersedes data of December 1994 1999 Apr 22 Philips Semiconductors Product specification NPN microwave power transistor FEATURES • Diffused emitter ballasting resistors	Original	PDF	M3D159 LLE18010X SCA63 125002/00/02/pp12 philips ferrite 4330-030 philips ferrite 4b1 TRansistor 648 BY239 BDT91 LLE18010X j160 capacitor philips
3M Touch Systems Abstract: No abstract text available Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RD02MUS1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W RD02MUS1 is a MOS FET type transistor specifically designed for VHF/UHF RF power amplifiers applications.	Original	PDF	RD02MUS1 175MHz 520MHz RD02MUS1 175MHz, 175MHz) 520MHz) 3M Touch Systems
RD02MUS1 Abstract: T112 UHF transistor FET RD02MUS1-101 3M Touch Systems transistor J17 Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RD02MUS1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W RD02MUS1 is a MOS FET type transistor specifically designed for VHF/UHF RF power amplifiers applications.	Original	PDF	RD02MUS1 175MHz 520MHz RD02MUS1 175MHz, 520MHz 175MHz) 520MHz) T112 UHF transistor FET RD02MUS1-101 3M Touch Systems transistor J17
RD02MUS1 Abstract: RD02MUS1-101 T112 3M Touch Systems Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD02MUS1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W RD02MUS1 is a MOS FET type transistor specifically designed for VHF/UHF RF power amplifiers applications.	Original	PDF	RD02MUS1 175MHz 520MHz RD02MUS1 RD02MUS1-101 T112 3M Touch Systems
transistor rf m 1104 Abstract: transistor equivalent D 1047 RD02MUS1 transistor 2439 transistor equivalent 1047 S 170 MOSFET TRANSISTOR transistor 4317 RD02MSU1 Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD02MUS1 Silicon MOSFET Power Transistor 175MHz,520MHz,2W OUTLINE DRAWING DESCRIPTION 6.0+/-0.15 RD02MUS1 is a MOS FET type transistor specifically designed for VHF/UHF RF po	Original	PDF	RD02MUS1 175MHz 520MHz RD02MUS1 520MHz 175MHz) 520MHz) transistor rf m 1104 transistor equivalent D 1047 transistor 2439 transistor equivalent 1047 S 170 MOSFET TRANSISTOR transistor 4317 RD02MSU1
RD02MUS1 Abstract: transistor rf m 1104 mosfet 840 datasheet Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD02MUS1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor 175MHz,520MHz,2W OUTLINE DRAWING RD02MUS1 is a MOS FET type transistor specifically designed for VHF/UHF RF po -wer amplifiers applications.	Original	PDF	RD02MUS1 175MHz 520MHz RD02MUS1 520MHz 175MHz) 520MHz) transistor rf m 1104 mosfet 840 datasheet
RD02MUS1 Abstract: T112 transistor marking zg RD02MVS1 Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD02MUS1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W RD02MUS1 is a MOS FET type transistor specifically designed for VHF/UHF RF po -wer amplifiers applications.	Original	PDF	RD02MUS1 175MHz 520MHz RD02MUS1 RD02MUS1-101 T112 transistor marking zg RD02MVS1
transistor power 5w Abstract: Transistor 5503 transistor 1271 SILICON npn POWER TRANSISTOR c 869 D 595 transistor transistor J17 2052-5636-02 transistor C 1344 transistor Common Base configuration j170 Text: an AMP company CW Power Transistor, ,2.3 GHz 5W PH2323-5 v2.00 Features l l l l l l l NPN Silicon Microwave Power Transistor Common Base Configuration Class C Operation Interdigitated Geometry Diffused Emitter Ballasting Resistors Gold Metalization System	Original	PDF	PH2323-5 transistor power 5w Transistor 5503 transistor 1271 SILICON npn POWER TRANSISTOR c 869 D 595 transistor transistor J17 2052-5636-02 transistor C 1344 transistor Common Base configuration j170
1030-1 Abstract: PH1090-15L Text: PH1090-15L AVIONICS PULSED POWER TRANSISTOR 15 WATTS, 1030 - 1090 MHz, 250µs PULSE, 10% DUTY M/A-COM PHI, INC. FEATURES OUTLINE DRAWING • Designed for Pulsed Avionics Applications • NPN Silicon Microwave Power Transistor • Common Base Configuration	Original	PDF	PH1090-15L DS180 1030-1 PH1090-15L
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: AFT26H160-4S4 Rev. 0, 7/2013 RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET This 32 watt asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous	Original	PDF	AFT26H160--4S4 AFT26H160-4S4R3
Untitled Abstract: No abstract text available Text: Document Number: AFT26P100−4WS Rev. 1, 8/2013 Freescale Semiconductor Technical Data RF Power LDMOS Transistor N−Channel Enhancement−Mode Lateral MOSFET This 22 watt symmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous	Original	PDF	AFT26P100â

smd transistor 6g Abstract: 6G smd transistor s band POWER TRANSISTOR 2.7 3.1 3.5 GHZ nxp 544 200B BLS6G2731-6G TAJD106K035R transistor equivalent table sot975c radar circuit component Text: BLS6G2731-6G LDMOS S-Band radar power transistor Rev. 01 — 19 February 2009 Product data sheet 1. Product profile 1.1 General description 6 W LDMOS power transistor intended for radar applications in the 2.7 GHz to 3.1 GHz range. Table 1. Typical performance	Original	PDF	BLS6G2731-6G BLS6G2731-6G smd transistor 6g 6G smd transistor s band POWER TRANSISTOR 2.7 3.1 3.5 GHZ nxp 544 200B TAJD106K035R transistor equivalent table sot975c radar circuit component
Untitled Abstract: No abstract text available Text: < Silicon RF Power MOS FET Discrete > RD02MUS2 RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W OUTLINE DRAWING DESCRIPTION 6.0+/-0.15 0.2+/-0.05 (0.22) RD02MUS2 is a MOS FET type transistor 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 specifically designed for VHF/UHF RF power	Original	PDF	RD02MUS2 175MHz 520MHz RD02MUS2 175MHz, 520MHz 175MHz)
RD02MUS2 Abstract: No abstract text available Text: < Silicon RF Power MOS FET Discrete > RD02MUS2 RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W OUTLINE DRAWING DESCRIPTION 6.0+/-0.15 0.2+/-0.05 (0.22) RD02MUS2 is a MOS FET type transistor 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 specifically designed for VHF/UHF RF power	Original	PDF	RD02MUS2 175MHz 520MHz RD02MUS2 175MHz, 520MHz 175MHz) 520MHz) Oct2011
Untitled Abstract: No abstract text available Text: < Silicon RF Power MOS FET Discrete > RD02MUS1 RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W DRAWING DESCRIPTION RD02MUS1 is a MOS FET type transistor 6.0+/-0.15 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 (0.22) OUTLINE specifically designed for VHF/UHF RF power	Original	PDF	RD02MUS1 175MHz 520MHz RD02MUS1 175MHz) 520MHz) 175MHz, 520MHz
PH2729-25M Abstract: j178 VCC36 Text: PH2729-25M RADAR PULSED POWER TRANSISTOR 25 WATTS, 2.70-2.90 GHz, 100µs PULSE, 10% DUTY M/A-COM PHI, INC. OUTLINE DRAWING FEATURES ∗ NPN Silicon Microwave Power Transistor ∗ Common Base Configuration ∗ Broadband Class C Operation ∗ High Efficiency Interdigitated Geometry	Original	PDF	PH2729-25M DS046 PH2729-25M j178 VCC36
Untitled Abstract: No abstract text available Text: Document Number: AFT27S010N Rev. 0, 11/2013 Freescale Semiconductor Technical Data RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET This 1.26 W RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 728 to 2700 MHz.	Original	PDF	AFT27S010N AFT27S010NT1
transistor 131 8D Abstract: transistor k 3728 QBE+61.2+dp2 Text: N AMER PHILIPS/DISCRETE 86D OLE D T' 01928 ^53=131 DDimbt. 5 BLY90 A V.H.F. POWER TRANSISTOR N-P-N epitaxial planar transistor intended for use in class-A, B and C operated mobile, industrial and m ilitary transmitters w ith a supply voltage o f 12,5 V . The transistor is resistance stabilized. Every tran	OCR Scan	PDF	BLY90 transistor 131 8D transistor k 3728 QBE+61.2+dp2
BLY90 Abstract: Wf VQE 23 F WE VQE 23 E wf vqe 23 WF VQE 11 E WF VQE 23 E WE VQE 11 E IEC134 philips Trimmer 60 pf WF VQE 23 D Text: PHILIPS INTERNATIONAL 41E ]> • 711002b 0 0 2 7 ^ A b «PHIN BLY90 T-33-13 V.H.F. POWER TRANSISTOR - N-P-N epitaxial planar transistor intended for use in class-A, 8 and C operated mobile, industrial and military transmitters witlr a supply voltage o f 12,5 V . The transistor is resistance stabilized. Every tran	OCR Scan	PDF	711002b BLY90 T-33-13 7z67566 BLY90 Wf VQE 23 F WE VQE 23 E wf vqe 23 WF VQE 11 E WF VQE 23 E WE VQE 11 E IEC134 philips Trimmer 60 pf WF VQE 23 D
TRANSISTOR zo 109 ma Abstract: transistor zo 109 transistor TI 310 Rogers 6010.5 PH2856 Text: Linear Accelerator Pulsed Power Transistor PH2856-22 22 Watts, 2.856 GHz, 12 jlis Pulse, 10% Duty Features Outline Drawing • NPN Silicon Microwave Power Transistor • Common Base Configuration • Class C Operation • High Efficiency Interdigitated Geometry	OCR Scan	PDF	PH2856-22 TT50M50A ATC100A TRANSISTOR zo 109 ma transistor zo 109 transistor TI 310 Rogers 6010.5 PH2856
2SC3817 Abstract: j171 transistor j152 Text: DATA SHEET SILICON POWER TRANSISTOR 2SC3817 NPN SILICON EPITAXIAL TRANSISTOR FOR 1500-MHz BAND POWER AMPLIFIER INDUSTRIAL USE FEATURES PACKAGE DIMENSIONS in millimeters • High efficiency, high power output and excellent linearity obtainable at 1500-M Hz band	OCR Scan	PDF	2SC3817 1500-MHz P11699EJ1V1DS00 j171 transistor j152

TRANSISTOR J17 Search Results

TRANSISTOR J17 Result Highlights (5)

TRANSISTOR J17 Datasheets Context Search

TRANSISTORS BJT bc548

diode BY239

equivalent of SL 100 NPN Transistor

philips ferrite 4330-030

3M Touch Systems

RD02MUS1

RD02MUS1

transistor rf m 1104

RD02MUS1

RD02MUS1

transistor power 5w

1030-1

Untitled

Untitled

smd transistor 6g

Untitled

RD02MUS2

Untitled

PH2729-25M

Untitled

transistor 131 8D

BLY90

TRANSISTOR zo 109 ma

2SC3817