TL817
Abstract: TL801 TL804 TL802 c901 transistor transistor c904 TL944 TL902 transistor c905 tl945
Text: PTFB241402F Customer-Specific Spec — Not for General Release High Power RF LDMOS Field Effect Transistor 140 W, 2300 – 2400 MHz Description The PTFB241402F integrates two LDMOS FETs into one open-cavity ceramic package. It is designed for cellular amplifier applications in
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PTFB241402F
PTFB241402F
H-37248-4
TL817
TL801
TL804
TL802
c901 transistor
transistor c904
TL944
TL902
transistor c905
tl945
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CSG3001-18A04
Abstract: thyristor BBC thyristor aeg BBC DSDI 35 WG15013B8C WG9017 abb sami star SM18CXC805 sm13cxc174 CSG2001-18A04
Text: REPLACEMENT TABLE FOR THE POWER SEMICONDUCTORS OF SAMI STAR FREQUENCY CONVERTERS The replacement table gives a list of those semiconductors, which can be used in SAMI STAR frequency converters. The types given for each semiconductor are interchangeable. Detail information about the mounting of the power
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400F415
460F460
500F500
630F415
730F460
800F500
570F575
630F660
870F575
1000F660
CSG3001-18A04
thyristor BBC
thyristor aeg
BBC DSDI 35
WG15013B8C
WG9017
abb sami star
SM18CXC805
sm13cxc174
CSG2001-18A04
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74HC123 watchdog
Abstract: application circuits of ic 74HC123 74HC123 PC319 PC358 PC393 PC4558 PC842 transistor marking CS Gyro Motor
Text: Introduction Analog Master , semi-custom IC which realizes one chip solution of analog circuits. Analog Master is a semi-custom LSI for creating analog circuits on a master wafer by interconnecting pre-diffused elements bipolar transistors, resistors, and capacitors already
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E41R
Abstract: M68000 M68300 MC68341 QEAQ9412 XC68341FT16 circuit of pit and interrupt AS68K rmc capacitor
Text: Chip Errata 68341 Integrated Processor 3/28/96 Copyright C 1996, Motorola Contents of this document are intended only for the internal use of Motorola customers designing with this product. This errata list applies to the following 68341 mask sets: Mask
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XC68341FT16
QEAQ9412
SIM40
M68000
AS68K.
E41R
M68300
MC68341
QEAQ9412
XC68341FT16
circuit of pit and interrupt
AS68K
rmc capacitor
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PN5179
Abstract: CBVK741B019 F63TNR MMBT5179 MPS5179 PN2222N TRANSISTOR C 3223 MJC2
Text: PN5179 MMBT5179 C E C B TO-92 SOT-23 E C B E Mark: 3C TO-92 B NPN RF Transistor This device is designed for use in low noise UHF/VHF amplifiers with collector currents in the 100 µA to 30 mA range in common emitter or common base mode of operation, and in low frequency
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PN5179
MMBT5179
OT-23
PN5179
CBVK741B019
F63TNR
MMBT5179
MPS5179
PN2222N
TRANSISTOR C 3223
MJC2
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pMOS transistor
Abstract: X311 XAPP311 PMOS driver coolrunner PCI Signal Path designer
Text: Please use this Application Note in reference to the CoolRunner XPLA3 family only. Refer to www.xilinx.com/partinfo/notify/pdn0007.htm for details. Application Note: CoolRunner® CPLDs R 5 Volt Tolerant and PCI XAPP311 v1.2 October 9, 2000 Summary The purpose of this application note is to investigate the PCI (Peripheral Component Interface)
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com/partinfo/notify/pdn0007
XAPP311
pMOS transistor
X311
XAPP311
PMOS driver
coolrunner PCI
Signal Path designer
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X311
Abstract: pMOS transistor XAPP311 Signal Path designer
Text: Application Note: CoolRunner CPLDs R 5 Volt Tolerant and PCI XAPP311 v1.1 February 14, 2000 Summary The purpose of this application note is to investigate the PCI (Peripheral Component Interface) environment when using 5V tolerant, 3.3V supply integrated circuits. In particular, we will
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XAPP311
X311
pMOS transistor
XAPP311
Signal Path designer
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HARRIS SEMICONDUCTOR APPLICATION NOTES
Abstract: SMD TRANSISTORS AAA GDIP1-T16 HFA3127 harris 8 lead cerdip DIMENSIONS
Text: HFA3127/883 S E M I C O N D U C T O R Ultra High Frequency Transistor Array February 1995 Features Description • This Circuit is Processed in Accordance to MIL-STD883 and is Fully Conformant Under the Provisions of Paragraph 1.2.1. The HFA3127/883 is an Ultra High Frequency Transistor
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HFA3127/883
MIL-STD883
HFA3127/883
1-800-4-HARRIS
HARRIS SEMICONDUCTOR APPLICATION NOTES
SMD TRANSISTORS AAA
GDIP1-T16
HFA3127
harris 8 lead cerdip DIMENSIONS
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SMD TRANSISTORS AAA
Abstract: GDIP1-T16 HFA3127 high frequency transistor
Text: HFA3127/883 Ultra High Frequency Transistor Array February 1995 Features Description • This Circuit is Processed in Accordance to MIL-STD883 and is Fully Conformant Under the Provisions of Paragraph 1.2.1. The HFA3127/883 is an Ultra High Frequency Transistor
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HFA3127/883
MIL-STD883
HFA3127/883
SMD TRANSISTORS AAA
GDIP1-T16
HFA3127
high frequency transistor
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2N7051
Abstract: 2N7053 CBVK741B019 F63TNR NZT7053 PN2222N S4-70 2N705
Text: 2N7053 NZT7053 C E C B TO-92 E C C B TO-226 B SOT-223 E NPN Darlington Transistor This device is designed for applications requiring extremely high gain at collector currents to 1.0 A and high breakdown voltage. Sourced from Process 06. Absolute Maximum Ratings*
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2N7053
NZT7053
O-226
OT-223
2N7051
2N7053
CBVK741B019
F63TNR
NZT7053
PN2222N
S4-70
2N705
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2N7051
Abstract: 2N7053 CBVK741B019 F63TNR NZT7053 PN2222N
Text: 2N7053 NZT7053 C E C B TO-92 E C C B TO-226 B SOT-223 E NPN Darlington Transistor This device is designed for applications requiring extremely high gain at collector currents to 1.0 A and high breakdown voltage. Sourced from Process 06. Absolute Maximum Ratings*
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2N7053
NZT7053
O-226
OT-223
2N7051
2N7053
CBVK741B019
F63TNR
NZT7053
PN2222N
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Untitled
Abstract: No abstract text available
Text: FS8855-DS-26_EN JAN 2011 FO Fo P R r R ro TU ef pe NE er rti ' en es ce O nl y REV. 2.6 Datasheet FS8855 500 mA LDO Linear Regulator FS8855 FO Fo P R r R ro TU ef pe NE er rti ' en es ce O nl y Fortune Semiconductor Corporation 富晶電子股份有限公司
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FS8855-DS-26
FS8855
500mAï
700mV
850mV
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atmel 344
Abstract: ATL60
Text: ATL60 Cell-3.4-4/98 ATL60/ATLS60 0.6µ Cell Library How to Use This Cell Library . 7-2 Gate Count Estimation. 7-2
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ATL60
ATL60/ATLS60
380mA
108mA
200mA
-12mA
-48mA)
-36mA
-144mA
atmel 344
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SAMSUNG VFD
Abstract: Samsung Tantalum Capacitor IN5819 diode IRF9540 application Buck Circuit S3F84A5 VLF12060 S3F84P4 IN5819 VISHAY BD1 VFD module
Text: APPLICATION NOTE S3F84A5 An LED Lighting System January 2010 Revision 0.00 Confidential Proprietary of Samsung Electronics Co., Ltd Copyright 2010 Samsung Electronics, Inc. All Rights Reserved Important Notice The information in this publication has been carefully
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S3F84A5
S3F84P4
100uF
WSR21R000FEA
IRF9540
IN5819
VLF12060-101M1R0
SAMSUNG VFD
Samsung Tantalum Capacitor
IN5819 diode
IRF9540 application
Buck Circuit
S3F84A5
VLF12060
IN5819 VISHAY
BD1 VFD module
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k 3683 transistor
Abstract: BCxxx TRANSISTOR PN2222N 2N6076 CBVK741B019 F63TNR small signal transistor transistor k 3683 transistor k 0247
Text: DISCRETE POWER & SIGNAL TECHNOLOGIES 2N6076 SILICON PNP SMALL SIGNAL TRANSISTOR 1 BVCEO . . . . 25 V Min 1 2 3 hFE . . . . 100 (Min) @ VCE = 10 V, IC = 10 mA B C E 2 0.135 - 0.145 (3.429 - 3.683) 3 0.175 - 0.185 (4.450 - 4.700) ABSOLUTE MAXIMUM RATINGS (NOTE 1)
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2N6076
k 3683 transistor
BCxxx TRANSISTOR
PN2222N
2N6076
CBVK741B019
F63TNR
small signal transistor
transistor k 3683
transistor k 0247
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2N5308
Abstract: PN2222N TO5 package D9842 F63TNR MPSA14 CBVK741B019 PN222N D74z transistor k 0247
Text: 2N5308 C TO-92 BE NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 1.0 A. Sourced from Process 05. See MPSA14 for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted
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2N5308
MPSA14
2N5308
PN2222N
TO5 package
D9842
F63TNR
CBVK741B019
PN222N
D74z
transistor k 0247
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2N3663
Abstract: CBVK741B019 F63TNR PN2222N PN918
Text: 2N3663 2N3663 B TO-92 CE NPN RF Transistor This device is designed for use as RF amplifiers, oscillators and multipliers with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 43. See PN918 for characteristics. Absolute Maximum Ratings*
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2N3663
PN918
2N3663
CBVK741B019
F63TNR
PN2222N
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ISO-2859-1
Abstract: PT202MR0MP1 EIAJ C-3
Text: SPEC. No. SH AR P ISSUE DG036004A Oct/28/03 CONPOUND SEMICONDUCTOR DIVISION ELECTRONIC COMPONENTS GROUP SHARP CORPORATION TECHNICAL LITERATURE DEVICE TECHNICAL LITERATURE FOR Photo Transistor MODEL No. PT202MR0MP1 * The technical literature is subject to be changed without notice *
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DG036004A
Oct/28/03
PT202MR0MP1
DG036004A
40kHz,
ISO-2859-1
PT202MR0MP1
EIAJ C-3
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capacitor 4700uF
Abstract: EI-57 transformer capacitor 4700uf 16v Transformer EI-57 CA723 DTR050100-P1 EI-57 TIP41A thermal fuse 115 0202I
Text: CUI IN C SPEC NO: 035-0058 PART NO: DTR050100-P1 UNIT: mm PAGE NO: 1 o f 3 DATE: 10/02/02 All information contained herein applies only to the above listed part number. Other versions of this part number with electrical or mechanical variations are available. Contact CUI Inc. for further assistance. 9615 SW Alien Blvd., Ste. 103, Beaverton OR 97005
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DTR050100-P1
120VAC,
160mA
420-SEO
18mmx2PCS
025mmxl
25mmxlPC
025mmx2
capacitor 4700uF
EI-57 transformer
capacitor 4700uf 16v
Transformer EI-57
CA723
DTR050100-P1
EI-57
TIP41A
thermal fuse 115
0202I
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transistor cross reference
Abstract: MPT3N40 Westinghouse SCR handbook LT 8224 ZENER DIODE sje389 N9602N npn transistor RCA 467 TFK 7 segment displays PUT 2N6027 delco 466
Text: C K TBD DOLLY LIST LOGO LIST SAFETY & RELIABLTY TEK PN SYSTEM II DIGITAL IC's MEMORIES. MOS. CM OS.ECL. TTL MICROPROCESSOR SPECIAL FUNCTION IC's DIGITAL / LINEAR ARRAYS LINEAR IC'S (PURCH) TEK-MADE IC’s 3 IC's INDEX (COLORED PGS) INCL PRGMD. SCRND.ETC
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DB3-K079
Abstract: No abstract text available
Text: SPEC IFICA TIO N Voltage regulator with on/off TK 715xxSCL Output Voltage Voltage Code Output Voltage xx Part : Correspondence list Output Voltage Voltage Code Voltage Code Output Voltage Voltage Code 1.9 V 19 2.0 V 20 3.0 V 30 4.0 V 40 2.1 V 21 3.1 V 31 4.1 V
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TK715xxSCL
DB3-K079
TK715xx
DB3-K079
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Untitled
Abstract: No abstract text available
Text: VPDQ1 DIE P-Channel Enhancement-Mode MOS Transistor in c o r p o r a te d VPDQ1CHP* BSS92 TP2020L TP1220L VP2020L 0.038 ‘ Meets or exceeds specification for all part numbers listed below For additional design information please consult the 0. 965 ( 0 .254)
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BSS92
TP2020L
TP1220L
VP2020L
VPDQ20.
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Untitled
Abstract: No abstract text available
Text: 3 HFA3127/883 February 1995 Ultra High Frequency Transistor Array Features Description • This Circuit is Processed In Accordance to MIL-STD883 and is Fully Conformant Under the Provisions of Paragraph 1.2.1. The HFA3127/883 is an Ultra High Frequency Transistor
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HFA3127/883
MIL-STD883
HFA3127/883
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harris 8 lead cerdip DIMENSIONS
Abstract: No abstract text available
Text: HFA3127/883 HARRIS S E M I C O N D U C T O R Ultra High Frequency Transistor Array February 1995 Features Description • This Circuit is Processed in Accordance to MIL-STD883 and is Fully Conform ant Under the Provisions of Paragraph 1.2.1. The HFA3127/883 is an Ultra High Frequency Transistor
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HFA3127/883
HFA3127/883
1-800-4-HARRIS
harris 8 lead cerdip DIMENSIONS
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