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    TRANSISTOR TO-3 OUTLINE DIMENSIONS Search Results

    TRANSISTOR TO-3 OUTLINE DIMENSIONS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    SSM3K361R Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 100 V, 3.5 A, 0.069 Ohm@10V, SOT-23F, AEC-Q101 Visit Toshiba Electronic Devices & Storage Corporation
    SSM3K341R Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 60 V, 6.0 A, 0.036 Ohm@10V, SOT-23F, AEC-Q101 Visit Toshiba Electronic Devices & Storage Corporation
    XPH13016MC Toshiba Electronic Devices & Storage Corporation P-ch MOSFET, -60 V, -60 A, 0.0099 Ω@-10V, SOP Advance(WF) Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR TO-3 OUTLINE DIMENSIONS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    C 5478 transistor

    Abstract: transistor 5478 7807 transistor resistor 39 ohm NEL2004 1N4454 1N5254 NEL2004F02-24 173278 LARGE SIGNAL IMPEDANCES
    Text: NPN SILICON BIPOLAR L - BAND POWER TRANSISTOR FEATURES NEL2004F02-24 OUTLINE DIMENSIONS Units in mm • HIGH OUTPUT POWER: PACKAGE OUTLINE F02 1.5 W Class A, 7 W Class AB • USEABLE FROM 1.5 TO 2.0 GHz (Input Pre-matched) BASE 3±0.2 2±0.2 2±0.2 2 X φ3.2±0.3


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    PDF NEL2004F02-24 NEL2004F02-24 24-Hour C 5478 transistor transistor 5478 7807 transistor resistor 39 ohm NEL2004 1N4454 1N5254 173278 LARGE SIGNAL IMPEDANCES

    2SC4941

    Abstract: NPN Transistor VCEO 1200V
    Text: SavantIC Semiconductor Product Specification 2SC4941 Silicon NPN Power Transistors DESCRIPTION •With TO-3PML package ·Switching power transistor ·High breakdown voltage PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline TO-3PML and symbol


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    PDF 2SC4941 2SC4941 NPN Transistor VCEO 1200V

    2SC3164

    Abstract: No abstract text available
    Text: JMnic Product Specification 2SC3164 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-247 package ・Switching power transistor ・High breakdown voltage PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline TO-247 and symbol


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    PDF 2SC3164 O-247 O-247) 2SC3164

    2SC4584

    Abstract: No abstract text available
    Text: Inchange Semiconductor Product Specification 2SC4584 Silicon NPN Power Transistors DESCRIPTION •With TO-3PML package ·High voltage,high speed ·Switching power transistor PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline TO-3PML and symbol


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    PDF 2SC4584 2SC4584

    2SC4235

    Abstract: No abstract text available
    Text: SavantIC Semiconductor Product Specification 2SC4235 Silicon NPN Power Transistors DESCRIPTION •With TO-247 package ·Switching power transistor ·High breakdown voltage PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline TO-247 and symbol


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    PDF 2SC4235 O-247 O-247) 2SC4235

    2SC3220

    Abstract: No abstract text available
    Text: SavantIC Semiconductor Product Specification 2SC3220 Silicon NPN Power Transistors DESCRIPTION •With TO-247 package ·Switching power transistor ·High breakdown voltage PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline TO-247 and symbol


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    PDF 2SC3220 O-247 O-247) 2SC3220

    2SC4232

    Abstract: No abstract text available
    Text: SavantIC Semiconductor Product Specification 2SC4232 Silicon NPN Power Transistors DESCRIPTION •With TO-247 package ·Switching power transistor ·High breakdown voltage PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline TO-247 and symbol


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    PDF 2SC4232 O-247 O-247) 2SC4232

    2SC4582

    Abstract: HIGH SPEED SWITCHING NPN
    Text: SavantIC Semiconductor Product Specification 2SC4582 Silicon NPN Power Transistors DESCRIPTION •With TO-3PML package ·High voltage,high speed ·Switching power transistor PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline TO-3PML and symbol


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    PDF 2SC4582 2SC4582 HIGH SPEED SWITCHING NPN

    2sc4584

    Abstract: No abstract text available
    Text: SavantIC Semiconductor Product Specification 2SC4584 Silicon NPN Power Transistors DESCRIPTION •With TO-3PML package ·High voltage,high speed ·Switching power transistor PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline TO-3PML and symbol


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    PDF 2SC4584 2sc4584

    2SC4585

    Abstract: No abstract text available
    Text: SavantIC Semiconductor Product Specification 2SC4585 Silicon NPN Power Transistors DESCRIPTION •With TO-3PML package ·High voltage,high speed ·Switching power transistor PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline TO-3PML and symbol


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    PDF 2SC4585 2SC4585

    2SC4232

    Abstract: No abstract text available
    Text: Inchange Semiconductor Product Specification 2SC4232 Silicon NPN Power Transistors • DESCRIPTION ·With TO-247 package ·Switching power transistor ·High breakdown voltage PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline TO-247 and symbol


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    PDF 2SC4232 O-247 O-247) 2SC4232

    2SC4059

    Abstract: No abstract text available
    Text: Inchange Semiconductor Product Specification 2SC4059 Silicon NPN Power Transistors • DESCRIPTION ·With TO-247 package ·High voltage;high speed ·Switching power transistor PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline TO-247 and symbol


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    PDF 2SC4059 O-247 O-247) 2SC4059

    TO-247 NPN SILICON POWER TRANSISTORS

    Abstract: 2SC4058 silicon power transistors 2SC4058 transistor
    Text: SavantIC Semiconductor Product Specification 2SC4058 Silicon NPN Power Transistors DESCRIPTION •With TO-247 package ·High voltage;high speed ·Switching power transistor PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline TO-247 and symbol


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    PDF 2SC4058 O-247 O-247) TO-247 NPN SILICON POWER TRANSISTORS 2SC4058 silicon power transistors 2SC4058 transistor

    2SC4057

    Abstract: No abstract text available
    Text: SavantIC Semiconductor Product Specification 2SC4057 Silicon NPN Power Transistors DESCRIPTION •With TO-247 package ·High voltage;high speed ·Switching power transistor PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline TO-247 and symbol


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    PDF 2SC4057 O-247 O-247) 2SC4057

    TO-247

    Abstract: 2SC3220 2SC32
    Text: Inchange Semiconductor Product Specification 2SC3220 Silicon NPN Power Transistors • DESCRIPTION ·With TO-247 package ·Switching power transistor ·High breakdown voltage PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline TO-247 and symbol


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    PDF 2SC3220 O-247 O-247) TO-247 2SC3220 2SC32

    Untitled

    Abstract: No abstract text available
    Text: 1401 Vishay Foil Resistors Bulk Metal Foil Technology 3 Pin Transistor Outline Hermetic Resistor Network The three pin TO-18 package is suitable for single resistor hermetic packaging with case and lid grounded for electrical isolation. This unique package may also be used to provide


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    PDF 27-Apr-2011

    NE856

    Abstract: S21E UPA801TF
    Text: NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES UPA801TF OUTLINE DIMENSIONS Units in mm • SMALL PACKAGE OUTLINE: SOT-363 package measures just 2.0 mm x 1.25 mm • LOW HEIGHT PROFILE: Just 0.60 mm high • HIGH COLLECTOR CURRENT: IC MAX = 100 mA PACKAGE OUTLINE TS06


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    PDF UPA801TF OT-363 UPA801TF NE856 UPA801TF-T1, 24-Hour S21E

    All similar transistor

    Abstract: NE688 S21E UPA809TF transistor outline package 3 8003* transistor
    Text: NPN SILICON HIGH FREQUENCY TRANSISTOR OUTLINE DIMENSIONS Units in mm FEATURES • SMALL PACKAGE OUTLINE: SOT-363 package measures just 2 mm x 1.25 mm • LOW HEIGHT PROFILE: Just 0.60 mm high • UPA809TF PACKAGE OUTLINE TS06 (Top View) 2.1 ± 0.1 1.25 ± 0.1


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    PDF OT-363 UPA809TF UPA809TF NE688 UPA809TF-T1, 24-Hour All similar transistor S21E transistor outline package 3 8003* transistor

    NE688

    Abstract: S21E UPA814TF
    Text: NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES UPA814TF OUTLINE DIMENSIONS Units in mm • SMALL PACKAGE OUTLINE: SOT-363 package measures just 2.0 mm x 1.25 mm • LOW HEIGHT PROFILE: Just 0.60 mm high • HIGH COLLECTOR CURRENT: IC MAX = 100 mA PACKAGE OUTLINE TS06


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    PDF UPA814TF OT-363 UPA814TF NE688 UPA814TF-T1, 24-Hour S21E

    8003* transistor

    Abstract: UPA814T UPA814T-T1 NE688 S21E transistor C 110 transistor f 20 nf
    Text: PRELIMINARY DATA SHEET NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES UPA814T OUTLINE DIMENSIONS Units in mm • SMALL PACKAGE STYLE: 2 NE688 Die in a 2 mm x 1.25 mm package • LOW NOISE FIGURE: NF = 1.5 dB TYP at 2 GHz • HIGH GAIN BANDWIDTH: fT = 9 GHz


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    PDF UPA814T NE688 UPA814T UPA814T-T1, 24-Hour 8003* transistor UPA814T-T1 S21E transistor C 110 transistor f 20 nf

    NE688

    Abstract: S21E UPA814T UPA814T-T1
    Text: NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES UPA814T OUTLINE DIMENSIONS Units in mm • SMALL PACKAGE STYLE: 2 NE688 Die in a 2 mm x 1.25 mm package • LOW NOISE FIGURE: NF = 1.5 dB TYP at 2 GHz • HIGH GAIN BANDWIDTH: fT = 9 GHz • HIGH COLLECTOR CURRENT: 100 mA


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    PDF UPA814T NE688 UPA814T IS21eI2 IS21EI UPA814T-T1 24-Hour S21E UPA814T-T1

    18-12 049 transistor

    Abstract: k 1094 transistor NE94432 0DD25 SIS 1124
    Text: NEC/ CALIFORNIA SbE J> • b427Mm DQOBSlb 2*15 BNECC NEC T NPN SILICON OSCILLATOR AND MIXER TRANSISTOR 7 NE94432 OUTLINE 32 TO-92 (Units in mm) HIGH GAIN BANDWIDTH PRODUCT: I t = 2000 M Hz TYP • M OUTLINE DIMENSIONS FEATURES • 3 LOW COLLECTOR TO BASE TIME CONSTANT:


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    PDF b427Mm NE94432 NE94432 18-12 049 transistor k 1094 transistor 0DD25 SIS 1124

    CSD1306

    Abstract: No abstract text available
    Text: 23633*14 QQ00Ô73 S3Ô CSD1306 >1L SILICON PLANAR EPITAXIAL TRANSISTOR N -P -N tra n s is to r PACKAGE OUTLINE DETAILS ­ ALL DIMENSIONS IN mm Marking C S D 1 3 0 6 E -6 E _3.0_ 2.8 0.14 0.48 Ö38 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 2.6


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    PDF CSD1306 CSD1306E-6E CSD1306

    2SC3629

    Abstract: No abstract text available
    Text: MITSUBISHI RF POWER TRANSISTOR 2SC3629 NPN EPITAXIAL PLANAR T Y P E DESCRIPTION OUTLINE DRAWING 2 S C 3 6 2 9 is a s ilic o n N PN e p ita x ia l p la n a r ty p e tra n s is to r Dimensions in mm designed f o r R F p o w e r a m p lifie rs in U H F band 7 .2 vo lts


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    PDF 2SC3629 2SC3629