C 5478 transistor
Abstract: transistor 5478 7807 transistor resistor 39 ohm NEL2004 1N4454 1N5254 NEL2004F02-24 173278 LARGE SIGNAL IMPEDANCES
Text: NPN SILICON BIPOLAR L - BAND POWER TRANSISTOR FEATURES NEL2004F02-24 OUTLINE DIMENSIONS Units in mm • HIGH OUTPUT POWER: PACKAGE OUTLINE F02 1.5 W Class A, 7 W Class AB • USEABLE FROM 1.5 TO 2.0 GHz (Input Pre-matched) BASE 3±0.2 2±0.2 2±0.2 2 X φ3.2±0.3
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NEL2004F02-24
NEL2004F02-24
24-Hour
C 5478 transistor
transistor 5478
7807 transistor
resistor 39 ohm
NEL2004
1N4454
1N5254
173278
LARGE SIGNAL IMPEDANCES
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2SC4941
Abstract: NPN Transistor VCEO 1200V
Text: SavantIC Semiconductor Product Specification 2SC4941 Silicon NPN Power Transistors DESCRIPTION •With TO-3PML package ·Switching power transistor ·High breakdown voltage PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline TO-3PML and symbol
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2SC4941
2SC4941
NPN Transistor VCEO 1200V
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2SC3164
Abstract: No abstract text available
Text: JMnic Product Specification 2SC3164 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-247 package ・Switching power transistor ・High breakdown voltage PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline TO-247 and symbol
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2SC3164
O-247
O-247)
2SC3164
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2SC4584
Abstract: No abstract text available
Text: Inchange Semiconductor Product Specification 2SC4584 Silicon NPN Power Transistors DESCRIPTION •With TO-3PML package ·High voltage,high speed ·Switching power transistor PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline TO-3PML and symbol
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2SC4584
2SC4584
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2SC4235
Abstract: No abstract text available
Text: SavantIC Semiconductor Product Specification 2SC4235 Silicon NPN Power Transistors DESCRIPTION •With TO-247 package ·Switching power transistor ·High breakdown voltage PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline TO-247 and symbol
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2SC4235
O-247
O-247)
2SC4235
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2SC3220
Abstract: No abstract text available
Text: SavantIC Semiconductor Product Specification 2SC3220 Silicon NPN Power Transistors DESCRIPTION •With TO-247 package ·Switching power transistor ·High breakdown voltage PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline TO-247 and symbol
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2SC3220
O-247
O-247)
2SC3220
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2SC4232
Abstract: No abstract text available
Text: SavantIC Semiconductor Product Specification 2SC4232 Silicon NPN Power Transistors DESCRIPTION •With TO-247 package ·Switching power transistor ·High breakdown voltage PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline TO-247 and symbol
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2SC4232
O-247
O-247)
2SC4232
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2SC4582
Abstract: HIGH SPEED SWITCHING NPN
Text: SavantIC Semiconductor Product Specification 2SC4582 Silicon NPN Power Transistors DESCRIPTION •With TO-3PML package ·High voltage,high speed ·Switching power transistor PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline TO-3PML and symbol
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2SC4582
2SC4582
HIGH SPEED SWITCHING NPN
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2sc4584
Abstract: No abstract text available
Text: SavantIC Semiconductor Product Specification 2SC4584 Silicon NPN Power Transistors DESCRIPTION •With TO-3PML package ·High voltage,high speed ·Switching power transistor PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline TO-3PML and symbol
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2SC4584
2sc4584
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2SC4585
Abstract: No abstract text available
Text: SavantIC Semiconductor Product Specification 2SC4585 Silicon NPN Power Transistors DESCRIPTION •With TO-3PML package ·High voltage,high speed ·Switching power transistor PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline TO-3PML and symbol
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2SC4585
2SC4585
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2SC4232
Abstract: No abstract text available
Text: Inchange Semiconductor Product Specification 2SC4232 Silicon NPN Power Transistors • DESCRIPTION ·With TO-247 package ·Switching power transistor ·High breakdown voltage PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline TO-247 and symbol
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2SC4232
O-247
O-247)
2SC4232
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2SC4059
Abstract: No abstract text available
Text: Inchange Semiconductor Product Specification 2SC4059 Silicon NPN Power Transistors • DESCRIPTION ·With TO-247 package ·High voltage;high speed ·Switching power transistor PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline TO-247 and symbol
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2SC4059
O-247
O-247)
2SC4059
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TO-247 NPN SILICON POWER TRANSISTORS
Abstract: 2SC4058 silicon power transistors 2SC4058 transistor
Text: SavantIC Semiconductor Product Specification 2SC4058 Silicon NPN Power Transistors DESCRIPTION •With TO-247 package ·High voltage;high speed ·Switching power transistor PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline TO-247 and symbol
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2SC4058
O-247
O-247)
TO-247 NPN SILICON POWER TRANSISTORS
2SC4058
silicon power transistors
2SC4058 transistor
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2SC4057
Abstract: No abstract text available
Text: SavantIC Semiconductor Product Specification 2SC4057 Silicon NPN Power Transistors DESCRIPTION •With TO-247 package ·High voltage;high speed ·Switching power transistor PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline TO-247 and symbol
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2SC4057
O-247
O-247)
2SC4057
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TO-247
Abstract: 2SC3220 2SC32
Text: Inchange Semiconductor Product Specification 2SC3220 Silicon NPN Power Transistors • DESCRIPTION ·With TO-247 package ·Switching power transistor ·High breakdown voltage PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline TO-247 and symbol
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2SC3220
O-247
O-247)
TO-247
2SC3220
2SC32
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Untitled
Abstract: No abstract text available
Text: 1401 Vishay Foil Resistors Bulk Metal Foil Technology 3 Pin Transistor Outline Hermetic Resistor Network The three pin TO-18 package is suitable for single resistor hermetic packaging with case and lid grounded for electrical isolation. This unique package may also be used to provide
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27-Apr-2011
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NE856
Abstract: S21E UPA801TF
Text: NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES UPA801TF OUTLINE DIMENSIONS Units in mm • SMALL PACKAGE OUTLINE: SOT-363 package measures just 2.0 mm x 1.25 mm • LOW HEIGHT PROFILE: Just 0.60 mm high • HIGH COLLECTOR CURRENT: IC MAX = 100 mA PACKAGE OUTLINE TS06
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UPA801TF
OT-363
UPA801TF
NE856
UPA801TF-T1,
24-Hour
S21E
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All similar transistor
Abstract: NE688 S21E UPA809TF transistor outline package 3 8003* transistor
Text: NPN SILICON HIGH FREQUENCY TRANSISTOR OUTLINE DIMENSIONS Units in mm FEATURES • SMALL PACKAGE OUTLINE: SOT-363 package measures just 2 mm x 1.25 mm • LOW HEIGHT PROFILE: Just 0.60 mm high • UPA809TF PACKAGE OUTLINE TS06 (Top View) 2.1 ± 0.1 1.25 ± 0.1
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OT-363
UPA809TF
UPA809TF
NE688
UPA809TF-T1,
24-Hour
All similar transistor
S21E
transistor outline package 3
8003* transistor
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NE688
Abstract: S21E UPA814TF
Text: NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES UPA814TF OUTLINE DIMENSIONS Units in mm • SMALL PACKAGE OUTLINE: SOT-363 package measures just 2.0 mm x 1.25 mm • LOW HEIGHT PROFILE: Just 0.60 mm high • HIGH COLLECTOR CURRENT: IC MAX = 100 mA PACKAGE OUTLINE TS06
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UPA814TF
OT-363
UPA814TF
NE688
UPA814TF-T1,
24-Hour
S21E
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8003* transistor
Abstract: UPA814T UPA814T-T1 NE688 S21E transistor C 110 transistor f 20 nf
Text: PRELIMINARY DATA SHEET NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES UPA814T OUTLINE DIMENSIONS Units in mm • SMALL PACKAGE STYLE: 2 NE688 Die in a 2 mm x 1.25 mm package • LOW NOISE FIGURE: NF = 1.5 dB TYP at 2 GHz • HIGH GAIN BANDWIDTH: fT = 9 GHz
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UPA814T
NE688
UPA814T
UPA814T-T1,
24-Hour
8003* transistor
UPA814T-T1
S21E
transistor C 110
transistor f 20 nf
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NE688
Abstract: S21E UPA814T UPA814T-T1
Text: NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES UPA814T OUTLINE DIMENSIONS Units in mm • SMALL PACKAGE STYLE: 2 NE688 Die in a 2 mm x 1.25 mm package • LOW NOISE FIGURE: NF = 1.5 dB TYP at 2 GHz • HIGH GAIN BANDWIDTH: fT = 9 GHz • HIGH COLLECTOR CURRENT: 100 mA
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UPA814T
NE688
UPA814T
IS21eI2
IS21EI
UPA814T-T1
24-Hour
S21E
UPA814T-T1
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18-12 049 transistor
Abstract: k 1094 transistor NE94432 0DD25 SIS 1124
Text: NEC/ CALIFORNIA SbE J> • b427Mm DQOBSlb 2*15 BNECC NEC T NPN SILICON OSCILLATOR AND MIXER TRANSISTOR 7 NE94432 OUTLINE 32 TO-92 (Units in mm) HIGH GAIN BANDWIDTH PRODUCT: I t = 2000 M Hz TYP • M OUTLINE DIMENSIONS FEATURES • 3 LOW COLLECTOR TO BASE TIME CONSTANT:
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b427Mm
NE94432
NE94432
18-12 049 transistor
k 1094 transistor
0DD25
SIS 1124
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CSD1306
Abstract: No abstract text available
Text: 23633*14 QQ00Ô73 S3Ô CSD1306 >1L SILICON PLANAR EPITAXIAL TRANSISTOR N -P -N tra n s is to r PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Marking C S D 1 3 0 6 E -6 E _3.0_ 2.8 0.14 0.48 Ö38 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 2.6
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CSD1306
CSD1306E-6E
CSD1306
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2SC3629
Abstract: No abstract text available
Text: MITSUBISHI RF POWER TRANSISTOR 2SC3629 NPN EPITAXIAL PLANAR T Y P E DESCRIPTION OUTLINE DRAWING 2 S C 3 6 2 9 is a s ilic o n N PN e p ita x ia l p la n a r ty p e tra n s is to r Dimensions in mm designed f o r R F p o w e r a m p lifie rs in U H F band 7 .2 vo lts
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2SC3629
2SC3629
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