JAPAN transistor
Abstract: TO263 transistor TS11B to263-7 TS5B TS15B TS7B to-263
Text: Transistor Outline TO-263 3 Lead Molded TO-263 NS Package Number TS3B 2000 National Semiconductor Corporation MS101190 www.national.com Transistor Outline (TO-263) May 1999 Transistor Outline (TO-263) 5 Lead Molded TO-263 NS Package Number TS5B www.national.com
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O-263)
O-263
MS101190
JAPAN transistor
TO263
transistor
TS11B
to263-7
TS5B
TS15B
TS7B
to-263
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2SB775
Abstract: 2SB77 2SD895 1116MW
Text: Ordering number:ENN679F 2SB775 : PNP Epitaxial Planar Silicon Transistor 2SD895 : NPN Triple Diffused Planar Silicon Transistor 2SB775/2SD895 85V/6A, AF 35W Output Applications Package Dimensions unit:mm 2022A [2SB775/2SD895] 15.6 14.0 3.2 3.5 4.8 2.0 1.3
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ENN679F
2SB775
2SD895
2SB775/2SD895
2SB775/2SD895]
2SB775
2SB77
2SD895
1116MW
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PDF
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2SD895
Abstract: 2SB775 1116MW 6792 transistor 679f
Text: Ordering number:679F 2SB775 : PNP Epitaxial Planar Silicon Transistor 2SD895 : NPN Triple Diffused Planar Silicon Transistor 2SB775/2SD895 85V/6A, AF 35W Output Applications Features Package Dimensions • Wide ASO because of on-chip ballast resistance. · Capable of being mounted easily becasuse of onepoint fixing type plastic molded package
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2SB775
2SD895
2SB775/2SD895
2SB775/2SD895]
2SD895
2SB775
1116MW
6792
transistor 679f
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PDF
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2sb77
Abstract: 2SB 545 2SB775 2SD895 2SD 388 A 2sb32
Text: Ordering number : ENN679F SANYO Semiconductors DATA SHEET 2SB775 / 2SD895 PNP Epitaxial Planar Silicon Transistor NPN Triple Diffused Planar Silicon Transistor 85V/6A AF 35W Output Applications Features • Wide ASO because of on-chip ballast resistance. · Capable of being mounted easily becasuse of one-point fixing type plastic molded package
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Original
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ENN679F
2SB775
2SD895
2SB775
2sb77
2SB 545
2SD895
2SD 388 A
2sb32
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PDF
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smd transistor x8
Abstract: smd transistor c011 12v 3a regulator LM317 WP smd transistor M5482 L298 L297 M5480 5kw dc-dc SGSF463 BYT12PI100
Text: DATA LOGGERS RECOMMENDED PRODUCTS FROM SGS-THOMSON PRINT HEAD HAMMER DRIVE Type Function ULN2003A ULN2064B ULN2068B ULN2074B L702N/A L6221AS L9222 High Current Darlington Drivers Medium Current Low Saturation Transistor Array BDX53 BDX54 Series BDW93 & BDW94 Series
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ULN2003A
ULN2064B
ULN2068B
ULN2074B
L702N/A
L6221AS
L9222
PBL3717A
L6201/2/3
L6204
smd transistor x8
smd transistor c011
12v 3a regulator LM317
WP smd transistor
M5482
L298 L297
M5480
5kw dc-dc
SGSF463
BYT12PI100
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PDF
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Schottky diode TO220 15A 1000V
Abstract: smd transistor c011 diode matrix rom LM317 DIP PACK transistor SMD 5kw smd L272 bdx54 smd LM317 SMD smps power supply 1500w amp TRANSIL DIODE smd
Text: DATA LOGGERS RECOMMENDED PRODUCTS FROM SGS-THOMSON PRINT HEAD HAMMER DRIVE Type ULN2003A ULN2064B ULN2068B ULN2074B L702N/A L6221AS L9222 Function High Current Darlington Drivers Medium Current Low Saturation Transistor Array BDX53 BDX54 Series BDW93 & BDW94 Series
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ULN2003A
ULN2064B
ULN2068B
ULN2074B
L702N/A
L6221AS
L9222
BDX53
BDX54
BDW93
Schottky diode TO220 15A 1000V
smd transistor c011
diode matrix rom
LM317 DIP PACK
transistor SMD 5kw
smd L272
bdx54 smd
LM317 SMD
smps power supply 1500w amp
TRANSIL DIODE smd
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PDF
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la 4440 amplifier circuit diagram 300 watt
Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
Text: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode
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AN-784A
la 4440 amplifier circuit diagram 300 watt
la 4440 amplifier circuit diagram 300 watt
diode LT 7229
2sd323
YM 7137 3D
DA 3807 pdf transistor
inverter welder 4 schematic
2N5630
THYRISTOR br 403
1N3492
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PDF
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Untitled
Abstract: No abstract text available
Text: g M OTOROLA M C3346 General Purpose Transistor Array One D ifferentially Connected Pair and Three Isolated Transistor Arrays GENERAL PURPOSE TRANSISTOR ARRAY The MC3346 is designed for general purpose, low power applications for consumer and industrial designs.
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C3346
MC3346
SO-14)
ti3b7253
0GT8252
MC3346
b3b72S3
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PDF
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FET BFW61
Abstract: BFW61 v511 304 fet transistor N CHANNEL FET BFW61
Text: 711Qfl2b D0t7tiflM TS3 M P H I N BFW61 N-CHANNEL SILICON FET Symmetrical n-channel silicon planar epitaxial junction field-effect transistor in aTO -72 metal envelope w ith the shield lead connected to the case. The transistor is designed fo r general purpose amplifiers.
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7110fl2b
BFW61
aTO-72
FET BFW61
BFW61
v511
304 fet transistor
N CHANNEL FET BFW61
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PDF
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sx3704
Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
Text: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide
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PDF
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Response AA0482
Abstract: 49/Response AA0482
Text: SECTION 2 SPECIFICATIONS INTRODUCTION The DSP56303 is fabricated in high density CMOS with Transistor-Transistor Logic TTL compatible inputs and outputs. The DSP56303 specifications are preliminary and are from design simulations, and may not be fully tested or guaranteed at this
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DSP56303
Response AA0482
49/Response AA0482
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PDF
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Untitled
Abstract: No abstract text available
Text: BPX81 2-10 TRANSISTOR ARRAYS BPX82— 89, 80 SIEMENS SINGLE TRANSISTOR Silicon NPN Phototransistor Dimensions in inches mm BPX81 Dimension “A*. Part No. Min. Max. BPX82 .177 (4.5) .193 (4.9) BPX 83 .275 (7.0) .291 (7.4) BPX 84 .377 (9.6) .393 (10) BPX 85
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BPX81
BPX82â
BPX82
GE006367
1000lx,
950nm
BPX81-3
BPX81-4
BPX81-2
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PDF
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Untitled
Abstract: No abstract text available
Text: FF 90 R 17 KF Transistor Transistor Elektrische Eigenschaften Electrical properties Höchstzulässige W erte Maximum rated values 1700 V c es Therm ische Eigenschaften Thermal properties 0,055 °C/W DC, pro Baustein / per module R th J C 0,110 ° c / w DC, pro Zweig / per arm
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3403ET7
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PDF
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Untitled
Abstract: No abstract text available
Text: T O SH IB A TLP180 TOSHIBA PHOTOCOUPLER GaAs IRED & PHOTO-TRANSISTOR T L P 1 80 PROGRAMMABLE CONTROLLERS AC/DC-INPUT MODULE TELECOMMUNICATION The TOSHIBA MINI FLAT COUPLER TLP180 is a small outline coupler, suitable for surface mount assembly. TLP180 consist of a photo transistor, optically coupled to a gallium
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TLP180
TLP180
UL1577,
E67349
961001EBC2
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PDF
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interruptor
Abstract: BSP92 PH* SOT223 transistor
Text: bb53TE4 □□70010 TS3 Philips Sem iconductors P-channel enhancement mode vertical D-MOS transistor IS IC 3 Product specification BSP92 _NAPC/PHILIPS semiconp b3E D FOR DETAILED INFORMATION SEE THE LATEST ISSUE OF HANDBOOK SC07 O R DATA SHEET FEATURES Q UICK REFERENCE DATA
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bb53TE4
OT223
telephonT223)
interruptor
BSP92
PH* SOT223 transistor
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PDF
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2SA1462
Abstract: JE 33 TRANSISTOR BO 346 J-10 T108 T460 3111R GM0B JE 800 transistor
Text: NEC i m=ïTivfx A Silicon Transistor 2SA1462 P N P i b " ^ + '> 7 J U M '> ' n > b ^ > ' > * 9 PN P Silicon Epitaxial Transistor High Speed Switching ^ S / P A C K A G E D IM EN SIO N S #ë/FEA TU RES O X - í v f > / 'iÈ ÎÉ Â 'j iË ^ o Unit : mm) ton : 9.0 ns T Y P . , t stg : 16 ns T Y P . ,
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2SA1462
o2SC3735
2SA1462
JE 33
TRANSISTOR BO 346
J-10
T108
T460
3111R
GM0B
JE 800 transistor
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PDF
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2SA1396
Abstract: 2SC3568 T108 TS33
Text: NEC j m = f T / x r x Silicon Power Transistor A 2SA1396 P N P i t: ^ * '> 7 7Vl'7ï2'> V □ > h =7 > i> 7* 9 x if f l PNP Silicon Epitaxial Transistor High Speed, High Voltage Switching Industrial Use 2 S A 1 3 9 6 i* iâ ^ * It Œ X ^ t L X W W fê H / P A C K A G E DIMENSIONS
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2SA1396
2SA1396
2SC3568
fifO988
2SC3568
T108
TS33
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PDF
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LB 122 transistor
Abstract: 2N2222AUA
Text: 61084 ms- 2N2222AUA SURFACE MOUNT NPN GENERAL PURPOSE TRANSISTOR OPTOELECTRONIC PRODUCTS DIVISION Features 0.075 1.91 0.061 (1.55) 0.225 (5.72) 0.215 (5.46) Ceramic surface mount package Miniature package to minimize circuit board area Hermetically sealed
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2N2222AUA
MIL-S-19500
100MHz
100kHz
150mA,
300ns,
LB 122 transistor
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PDF
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T17 TRANSISTOR
Abstract: RN2731B110W
Text: Philips Semiconductors Objective specification NPN Silicon planar epitaxial RN2731B110W microwave power transistor FEATURES • Suitable for short and medium pulse applications up to 100 is pulse width, 10% duty factor • Diffused emitter ballasting resistors
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RN2731B110W
10Ojxs;
7110flPb
T17 TRANSISTOR
RN2731B110W
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PDF
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NDB7051
Abstract: NDP7051
Text: M ay 1996 National Semiconductor " NDP7051 / NDB7051 N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology.
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NDP7051
NDB7051
bSQ113Ã
NDB7051
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PDF
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Untitled
Abstract: No abstract text available
Text: 61084 2N2222AUA SURFACE MOUNT NPN GENERAL PURPOSE TRANSISTOR OPTOELECTRONIC PRODUCTS DIVISION Features • • • • 0.075 1.91 0.061 (1.55) 0.225 (5.72) 0.215 (5.46) Ceramic surface mount package Miniature package to minimize circuit board area Hermetically sealed
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2N2222AUA
MIL-S-19500
2N2222AUA
100MHz
100kHz
100kHz
150mA,
300ns,
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PDF
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TRANSISTOR b1181
Abstract: 2SD1649 SANYO KOGYO JIS B1181 LA78 U5DR sanyo transistor T03-PML
Text: SANYO SEMICONDUCTOR 1EE D | CORP 7T17Q7t. GQOSIBD •T-S3-U 2SD1649 - NPN Triple Diffused Planar S ilicon Transistor 2039 Color TV Horizontal Deflection Output Applicationsfwith Damper Diode 1755B Applications . High-voltage, power switching Features . Fast speed tfmax=0.4us).
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2SD1649
QD513Q
1755B
B1181
B1252
TRANSISTOR b1181
2SD1649
SANYO KOGYO
JIS B1181
LA78
U5DR
sanyo transistor
T03-PML
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PDF
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2n189
Abstract: 2N1136b 2N420 B1151 EQUIVALENT 2SA114 OC59 2T312 2T203 SFT125 2N1152
Text: INTERNATIONAL TRANSISTOR SUBSTITUTION GUIDEBOOK by KEATS A. PULLEN. Jr., Eng. D. Member of the Scientific Staff, Ballistic Research Laboratories, Aberdeen Proving G rounds Adjunct Professor of Electrical Engineering, Drexel Institute of Technology Author of: Conductance Design of Active Circuits
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2G101*
2G102*
2G103*
2G109
2G220
2G221
2G222
2G223
2G224
2n189
2N1136b
2N420
B1151 EQUIVALENT
2SA114
OC59
2T312
2T203
SFT125
2N1152
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PDF
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Visil
Abstract: 100-P BUK101-50 BUK101-50DL T0220AB BUK101-500L
Text: b5E D PHILIPS INTERNATIONAL m 7110aEb DQfc.37^1 405 « P H I N Philips Semiconductors Product Specification PowerMOS transistor Logic level TOPFET_ DESCRIPTION Monolithic temperature and overload protected loaic level power MOSFET in a 3 pin plastic
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BUK101-50DL
Iisc/Iisq25
sl25-C
Visil
100-P
BUK101-50
BUK101-50DL
T0220AB
BUK101-500L
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PDF
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