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    TRANSISTOR WB1 Search Results

    TRANSISTOR WB1 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR WB1 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TH 2190 mosfet

    Abstract: AN1955 MRF21180 MRF21180R6
    Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF21180/D SEMICONDUCTOR TECHNICAL DATA The RF Sub - Micron MOSFET Line RF Power Field Effect Transistor MRF21180R6 Freescale Semiconductor, Inc. N - Channel Enhancement - Mode Lateral MOSFET


    Original     		PDF MRF21180/D MRF21180R6 TH 2190 mosfet AN1955 MRF21180 MRF21180R6

    MRF9120

    Abstract: MRF9120S
    Text: MOTOROLA Order this document by MRF9120/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor MRF9120 MRF9120S N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications at frequencies


    Original     		PDF MRF9120/D MRF9120 MRF9120S MRF9120 MRF9120S

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF9060M/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistor MRF9060MBR1 N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications at frequencies


    Original     		PDF MRF9060M/D MRF9060MBR1 DEVICEMRF9060M/D

    93F2975

    Abstract: transistor WB1
    Text: MOTOROLA Order this document by MRF9060M/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistor MRF9060MBR1 N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications at frequencies


    Original     		PDF MRF9060M/D MRF9060MBR1 DEVICEMRF9060M/D 93F2975 transistor WB1

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF9060M/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistor MRF9060MBR1 N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications at frequencies


    Original     		PDF MRF9060M/D MRF9060MBR1 DEVICEMRF9060M/D

    us 945 mosfet

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF9030M/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistor MRF9030MR1 N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications at frequencies


    Original     		PDF MRF9030M/D MRF9030MR1 us 945 mosfet

    Untitled

    Abstract: No abstract text available
    Text: Document Number: MRF9060N Rev. 13, 6/2009 Freescale Semiconductor Technical Data RF Power Field Effect Transistor Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of this device


    Original     		PDF MRF9060N MRF9060NR1

    MARKING WB1

    Abstract: EB212 MRF9085 MRF9085LSR3 MRF9085LS
    Text: Freescale Semiconductor Technical Data RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF9085LSR3 LIFETIME BUY Designed for broadband commercial and industrial applications with frequencies from 865 to 895 MHz. The high gain and broadband performance


    Original     		PDF MRF9085LSR3 MRF9085 MARKING WB1 EB212 MRF9085LSR3 MRF9085LS

    MRF377H

    Abstract: 470-860 mhz Power amplifier w nippon capacitors 08051J4R7BBS 0805J C182
    Text: Freescale Semiconductor Technical Data RF Power Field-Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET MRF377HR3 LIFETIME BUY Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance


    Original     		PDF MRF377H 27conductor MRF377HR3 MRF377H 470-860 mhz Power amplifier w nippon capacitors 08051J4R7BBS 0805J C182

    MARKING WB1

    Abstract: ATC100B470JT500XT MRF9135L MRF9135LR3 T491D106K035AT
    Text: Freescale Semiconductor Technical Data RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF9135LR3 LIFETIME BUY Designed for broadband commercial and industrial applications with frequencies from 865 to 895 MHz. The high gain and broadband performance


    Original     		PDF MRF9135LR3 MRF9135L MARKING WB1 ATC100B470JT500XT MRF9135LR3 T491D106K035AT

    MARKING WB1

    Abstract: MRF9135LSR3 ATC100B470JT500XT MRF9135L T491D106K035AT wb1 u 865 marking power amplifier ATC100B8R2BT500XT
    Text: Freescale Semiconductor Technical Data Document Number: MRF9135L - 2 Rev. 10, 9/2008 RF Power Field Effect Transistor MRF9135LSR3 Designed for broadband commercial and industrial applications with frequencies from 865 to 895 MHz. The high gain and broadband performance


    Original     		PDF MRF9135L MRF9135LSR3 MARKING WB1 MRF9135LSR3 ATC100B470JT500XT T491D106K035AT wb1 u 865 marking power amplifier ATC100B8R2BT500XT

    MRF9085

    Abstract: MARKING WB1 EB212 MRF9085LR3 c13 cutout
    Text: Freescale Semiconductor Technical Data RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF9085LR3 LIFETIME BUY Designed for broadband commercial and industrial applications with frequencies from 865 to 895 MHz. The high gain and broadband performance


    Original     		PDF MRF9085LR3 MRF9085-2 MRF9085 MARKING WB1 EB212 MRF9085LR3 c13 cutout

    MRF9045N

    Abstract: 945 TRANSISTOR AN1955 EB212 MRF9045MR1 MRF9045NR1 A113 6020G marking wb2 MRF9045
    Text: Freescale Semiconductor Technical Data Document Number: MRF9045N Rev. 12, 9/2008 RF Power Field Effect Transistor MRF9045NR1 Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of this device


    Original     		PDF MRF9045N MRF9045NR1 MRF9045N 945 TRANSISTOR AN1955 EB212 MRF9045MR1 MRF9045NR1 A113 6020G marking wb2 MRF9045

    MRF9030N

    Abstract: 945 TRANSISTOR A113 ATC100B470JT500XT MRF9030NBR1 MRF9030NR1 T491D106K035AT mrf9030n stability
    Text: Freescale Semiconductor Technical Data Document Number: MRF9030N Rev. 12, 9/2008 RF Power Field Effect Transistor MRF9030NR1 Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of this device


    Original     		PDF MRF9030N MRF9030NR1 MRF9030N 945 TRANSISTOR A113 ATC100B470JT500XT MRF9030NBR1 MRF9030NR1 T491D106K035AT mrf9030n stability

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF21085-1 Rev. 10, 10/2008 RF Power Field Effect Transistor MRF21085LR3 Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier


    Original     		PDF MRF21085--1 MRF21085LR3

    MRF9030N

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF9030N Rev. 12, 9/2008 RF Power Field Effect Transistor MRF9030NR1 Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of this device


    Original     		PDF MRF9030N MRF9030NR1 MRF9030N

    Untitled

    Abstract: No abstract text available
    Text: Document Number: MRF9045N Rev. 12, 9/2008 Freescale Semiconductor Technical Data RF Power Field Effect Transistor MRF9045NR1 Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of this device


    Original     		PDF MRF9045N MRF9045NR1

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF21180/D SEMICONDUCTOR TECHNICAL DATA The RF Sub - Micron MOSFET Line RF Power Field Effect Transistor MRF21180R6 N - Channel Enhancement - Mode Lateral MOSFET Designed for W- CDMA base station applications with frequencies from 2110


    Original     		PDF MRF21180/D MRF21180R6 MRF21180/D

    ATC100B100JT500XT

    Abstract: MRF9060NR1 945 TRANSISTOR FREESCALE PACKING MARKING WB1 A113 ATC100B3R9CT500XT ATC100B470JT500XT JESD22 MRF9060NBR1
    Text: Freescale Semiconductor Technical Data Document Number: MRF9060N Rev. 13, 6/2009 RF Power Field Effect Transistor MRF9060NR1 Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of this device


    Original     		PDF MRF9060N MRF9060NR1 ATC100B100JT500XT MRF9060NR1 945 TRANSISTOR FREESCALE PACKING MARKING WB1 A113 ATC100B3R9CT500XT ATC100B470JT500XT JESD22 MRF9060NBR1

    TH 2190 mosfet

    Abstract: CDR33BX104AKWS MRF21180 MRF21180R6
    Text: Freescale Semiconductor Technical Data Document Number: MRF21180 Rev. 6, 5/2006 RF Power Field Effect Transistor MRF21180R6 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.


    Original     		PDF MRF21180 MRF21180R6 TH 2190 mosfet CDR33BX104AKWS MRF21180 MRF21180R6

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF21180 Rev. 6, 5/2006 RF Power Field Effect Transistor MRF21180R6 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.


    Original     		PDF MRF21180 MRF21180R6

    MRF21085

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF21085-2 Rev. 11, 10/2008 RF Power Field Effect Transistor MRF21085LSR3 Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier


    Original     		PDF MRF21085--2 MRF21085LSR3 MRF21085

    539 MOTOROLA transistor

    Abstract: mosfet MTBF MRF5P21180 100-B300 transistor motorola 236 CDR33BX104AKWS
    Text: MOTOROLA Order this document by MRF5P21180/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistor MRF5P21180 N–Channel Enhancement–Mode Lateral MOSFET Designed for W–CDMA base station applications with frequencies from 2110


    Original     		PDF MRF5P21180/D MRF5P21180 539 MOTOROLA transistor mosfet MTBF MRF5P21180 100-B300 transistor motorola 236 CDR33BX104AKWS

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF9060N Rev. 12, 9/2008 RF Power Field Effect Transistor MRF9060NR1 Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of this device


    Original     		PDF MRF9060N MRF9060NR1 MRF9060N