TRANSISTOR ZC Search Results

TRANSISTOR ZC Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
CA3082	Rochester Electronics LLC	Small Signal Bipolar Transistor
CA3081F	Rochester Electronics LLC	Small Signal Bipolar Transistor
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL

TRANSISTOR ZC Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
MN1280 Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA Text: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor	Original	PDF
oz960 Abstract: khb9D5N20P MB4213 KIA78pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j Text: Table of Contents Index 4 SMD ✞✟ Bipolar Junction Transistors Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal High hFE Transistors	Original	PDF	KIA7900PI TC7SH04FU KIC7SH04FU SC604* KAC3301QN M51943 KIA7042AP/AF TC7SH08FU KIC7SH08FU LT1937 oz960 khb9D5N20P MB4213 KIA78pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j
Transistor 03 smd Abstract: smd transistor NF transistor smd zc 11 smd transistor zc SMD TRANSISTOR TRANSISTOR SMD fr transistor SMD 24 smd transistor marking 03 Text: SMD General Purpose Transistor NPN MMBT3904 SMD General Purpose Transistor (NPN) Features • NPN Silicon Epitaxial Planar Transistor for Switching and Amplifier Applications  RoHS compliance SOT-23 Mechanical Data Case: SOT-23, Plastic Package Terminals:	Original	PDF	MMBT3904 OT-23 OT-23, MIL-STD-202G, Transistor 03 smd smd transistor NF transistor smd zc 11 smd transistor zc SMD TRANSISTOR TRANSISTOR SMD fr transistor SMD 24 smd transistor marking 03
NTE341 Abstract: No abstract text available Text: NTE341 Silicon NPN Transistor RF Power Output Description: The NTE341 is a epitaxial silicon NPN transistor designed primarily for VHF mobile communications. The chip of this transistor is mounted so as to isolate the collector lead and ground the emitter lead	Original	PDF	NTE341 NTE341 175MHz 155MHz 136MHz
J162 Abstract: transistor j162 SATCOM ASAT35L Text: ASAT35L NPN RF POWER TRANSISTOR DESCRIPTION: The ASAT35L is a Common Base Transistor Designed for L-Band Satcom Amplifier Applications. PACKAGE STYLE 400 2L FLG FEATURES INCLUDE: • Input/Output Matching Networks • Gold Metallization • Emitter Ballasting	Original	PDF	ASAT35L ASAT35L J162 transistor j162 SATCOM
NTE478 Abstract: No abstract text available Text: NTE478 Silicon NPN Transistor RF Power Output, PO = 100W @ 175MHz Description: The NTE478 is a 12.5 Volt epitaxial silicon NPN planar transistor designed primarily for VHF communications. This device utilizes diffused emitter resistors to achieve infinite VSWR under operating	Original	PDF	NTE478 175MHz NTE478
VHB125-28 Abstract: ASI10731 j105 transistor Text: VHB125-28 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI VHB125-28 is NPN RF power transistor designed primarily for VHF communications. It utilizes Emitter ballasting to provide high VSWR handling capability. PACKAGE STYLE .500 6L FLG FEATURES: C A	Original	PDF	VHB125-28 VHB125-28 ASI10731 j105 transistor
HF220-28 Abstract: ASI10609 Text: HF220-28 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI HF220-28 is 28 V epitaxial planar transistor, designed for SSB and VHF communications. The device utilizes emitter ballasting for improved ruggedness and reliability. PACKAGE STYLE .500 4L FLG .112x45°	Original	PDF	HF220-28 HF220-28 112x45° 000MHz ASI10609
ULBM5 Abstract: ASI10680 Text: ULBM5 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI ULBM5 is a gold metallized RF power transistor designed for 12.5 V, Class-C UHF communications applications. It utilizes emitter ballasting to achieve high reliability & ruggedness. PACKAGE STYLE .280 4L STUD	Original	PDF
ULBM45 Abstract: ASI10685 Text: ULBM45 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI ULBM45 is a gold metallized RF power transistor designed for 12.5 V class-C UHF communication applications. The device utilizes emitter ballasting to achieve high reliability and ruggedness. PACKAGE STYLE .500 6L FLG	Original	PDF	ULBM45 ULBM45 ASI10685
Untitled Abstract: No abstract text available Text: MS1263 RF & MICROWAVE TRANSISTOR UHF MOBILE APPLICATIONS Features • • • • • • 512 MHz 12.5 VOLTS POUT = 15 W MINIMUM GP = 7.8 dB INPUT MATCHED COMMON EMITTER CONFIGURATION DESCRIPTION: The MS1263 is a NPN silicon RF power transistor designed for	Original	PDF	MS1263 MS1263 500mA
transistor smd zc ce Abstract: PMBT3904VS smd "code rc" transistor MARKING CODE ZC smd transistor zc Marking Code SMD zc NXP SMD TRANSISTOR MARKING CODE TRANSISTOR SMD MARKING CODE transistor smd zc 11 transistor smd code marking 101 Text: PMBT3904VS 40 V, 200 mA NPN/NPN switching transistor Rev. 01 — 8 July 2009 Product data sheet 1. Product profile 1.1 General description NPN/NPN double switching transistor in a SOT666 ultra small and flat lead Surface-Mounted Device SMD plastic package.	Original	PDF	PMBT3904VS OT666 PMBT3904VS PMBT3906VS PMBT3946VPN 771-PMBT3904VS115 transistor smd zc ce smd "code rc" transistor MARKING CODE ZC smd transistor zc Marking Code SMD zc NXP SMD TRANSISTOR MARKING CODE TRANSISTOR SMD MARKING CODE transistor smd zc 11 transistor smd code marking 101
free transistor equivalent book Abstract: free all transistor equivalent book transistor ic equivalent book Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PBSS4350T 50 V low VCEsat NPN transistor Product specification 2002 Aug 08 Philips Semiconductors Product specification 50 V low VCEsat NPN transistor PBSS4350T FEATURES QUICK REFERENCE DATA • Low collector-emitter saturation voltage VCEsat and	Original	PDF	M3D088 PBSS4350T SCA74 613514/01/pp12 free transistor equivalent book free all transistor equivalent book transistor ic equivalent book
VHB50-28S Abstract: ASI10730 Text: VHB50-28S NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI VHB50-28S is an NPN power transistor designed for 25 V Class-C ground station transmitters, it utilizes emitter ballasting and gold metalization to provide optimum VSWR capability. PACKAGE STYLE .380 4L STUD	Original	PDF	VHB50-28S VHB50-28S 112x45° ASI10730

Untitled Abstract: No abstract text available Text: KST4124 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Symbol Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Storage Temperature	OCR Scan	PDF	KST4124 OT-23 KST3904
B578 Abstract: kst4124 Text: KST4124 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR S O T -2 3 ABSOLUTE MAXIMUM RATINGS TA=25t; Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Currant Collector Dissipation Storage T emperature	OCR Scan	PDF	KST4124 KST3904 100MHz B578 kst4124
BFY80 Abstract: No abstract text available Text: Silïzium-NPN-Epitaxial-Planar-Transistor Silicon NPN Epitaxial Pianar Transistor Anwendungen: Ansteuerung von Ziffernanzeigeröhren und Relais Applications: D river stages fo r in d ica to r tubes and relays Features: Besondere Merkmale: • Hohe Sperrspannung	OCR Scan	PDF
marking code W1 Abstract: TRANSISTOR 3358 BFT92 BFT92W Text: Philips Semiconductors Product specification PNP 4 GHz wideband transistor BFT92W FEATURES DESCRIPTION • High power gain Silicon PNP transistor in a plastic, SOT323 S-mini package. The BFT92W uses the same crystal as the SOT23 version, BFT92. • Gold metallization ensures	OCR Scan	PDF	BFT92W OT323 BFT92W BFT92. MBCB70 OT323. 7110fl2b marking code W1 TRANSISTOR 3358 BFT92
Untitled Abstract: No abstract text available Text: GaAs IRED a PHOTO-TRANSISTOR TLP731,732 OFFICE MACHINE. HOUSEHOLD USE EQUIPMENT. SOLID STATE RELAY. SWITCHING POWER SUPPLY. The TOSHIBA TLP731 and TLP732 consist of a photo-transistor optically coupled to a gallium arsenide infrared emitting diode in a six lead	OCR Scan	PDF	TLP731 TLP732 BS415 BS7002 EN60950) UL1577, E67349 TLP731
10LZ Abstract: IR 732 H Text: TLP731,732 GaAs IRED S PHOTO-TRANSISTOR OFFICE MACHINE. HOUSEHOLD USE EQUIPMENT. SOLID STATE RELAY. SWITCHING POWER SUPPLY. The TOSHIBA TLP731 and TLP732 consist of a photo-transistor o ptically coupled to a gallium arsenide infrared emitting diode in a six lead	OCR Scan	PDF	TLP731 TLP732 E67349 EN60950) BS7002 TLP732 10LZ IR 732 H
BFT92 Abstract: "MARKING CODE W1*" GHz PNP transistor marking G SOT323 Transistor SOT323 Marking 87 SOT323 WM BFT92W marking L2 SOT23 6 Text: Philips Semiconductors Product specification PNP 4 GHz wideband transistor BFT92W FEATURES DESCRIPTION • High power gain Silicon PNP transistor in a plastic, SOT323 S-mini package. The BFT92W uses the same crystal as the SOT23 version, BFT92. • Gold metallization ensures	OCR Scan	PDF	BFT92W OT323 BFT92W BFT92. OT323. 711002b BFT92 "MARKING CODE W1*" GHz PNP transistor marking G SOT323 Transistor SOT323 Marking 87 SOT323 WM marking L2 SOT23 6
KST3904 sot-23 Abstract: KST3904 KST4124 Text: KST4124 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Sym bol C ollector-Base Voltage C ollector-E m itter Voltage Em itter-Base Voltage C ollector C urrent C ollector D issipation Storage Tem perature	OCR Scan	PDF	KST4124 KST3904 OT-23 100MHz 100HA, 300ns, KST3904 sot-23 KST4124
sot 23 marking code 2t Abstract: marking DG sot-23 NPN transistor sot-23 MARKING CODE G1 MARKING NT SOT23 sot-23 l6 marking of m7 diodes sot-23 marking LC transistor ad 1v m6 marking transistor sot-23 C5 MARKING TRANSISTOR Text: FERRANTI semiconductors HT2 NPN Silicon Planar High Voltage Transistor DESCRIPTION This plastic encapsulated transistor is designed for any application requiring high voltage capability at relatively low collector currents. Complementary to the HT3 Encapsulated in the popular SOT-23 package the device is	OCR Scan	PDF	OT-23 FMMT-A13 FMMT-A14 BCW67A FMMT-A20 BCW67B FMMT-A42 BCW67C FMMT-A43 sot 23 marking code 2t marking DG sot-23 NPN transistor sot-23 MARKING CODE G1 MARKING NT SOT23 sot-23 l6 marking of m7 diodes sot-23 marking LC transistor ad 1v m6 marking transistor sot-23 C5 MARKING TRANSISTOR
BFS62 Abstract: Planar RF Transistor B4025 AC309 Text: BFS 62 'W Silizium-NPN-Epitaxial-Planar-HF-Transistor Silicon NPN Epitaxial Planar RF Transistor Anwendungen: Allgem ein bis in den VHF-Bereich Applications: General up to the VHF range Besondere Merkmale: Features: • Kleine R ückw irkungskapazität • Small feedback capacitance	OCR Scan	PDF	BFS62 BFS62 Planar RF Transistor B4025 AC309

TRANSISTOR ZC Search Results

TRANSISTOR ZC Result Highlights (5)

TRANSISTOR ZC Datasheets Context Search

MN1280

oz960

Transistor 03 smd

NTE341

J162

NTE478

VHB125-28

HF220-28

ULBM5

ULBM45

Untitled

transistor smd zc ce

free transistor equivalent book

VHB50-28S

Untitled

B578

BFY80

marking code W1

Untitled

10LZ

BFT92

KST3904 sot-23

sot 23 marking code 2t

BFS62