TRANSISTORS D 669 Search Results

TRANSISTORS D 669 Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

TRANSISTORS D 669 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
NTE2548 Abstract: NTE2547 Text: NTE2547 NPN & NTE2548 (PNP) Silicon Complementary Transistors Darlington Driver Features: D High DC Current Gain D High Current Capacity and Wide ASO D Low Saturation Voltage Applications: D Motor Drivers D Printer Hammer Drivers D Relay Drivers D Voltage Regulator Control	Original	NTE2547 NTE2548 500mA, NTE2548 NTE2547	PDF
NTE2551 Abstract: NTE2552 Text: NTE2551 NPN & NTE2552 (PNP) Silicon Complementary Transistors Darlington Driver, Switch Features: D High DC Current Gain D Low Saturation Voltage D High Current Capacity and Wide ASO D Isolated TO220 Type Package Applications: D Motor Drivers D Printer Hammer Drivers	Original	NTE2551 NTE2552 500mA, NTE2551 NTE2552	PDF
Untitled Abstract: No abstract text available Text: NTE2547 NPN & NTE2548 (PNP) Silicon Complementary Transistors Darlington Driver TO220 Full Pack Features: D High DC Current Gain D High Current Capacity and Wide ASO D Low Saturation Voltage Applications: D Motor Drivers D Printer Hammer Drivers D Relay Drivers	Original	NTE2547 NTE2548 500mA,	PDF
NTE2569 Abstract: NTE2568 Text: NTE2568 NPN & NTE2569 (PNP) Silicon Complementary Transistors High Current Switch Features: D Low Saturation Voltage D Fast Switching Speed D Isolated TO220 Type Package Applications: D Car–Use Inductance Drivers, Lamp Drivers D Inverter Drivers, Converters (Strobes, Flashes, FLT Lighting Circuits)	Original	NTE2568 NTE2569 NTE2569 NTE2568	PDF
NTE2574 Abstract: NTE2575 Text: NTE2574 NPN & NTE2575 (PNP) Silicon Complementary Transistors Video Output for HDTV Features: D High Collector Emitter Breakdown Voltage: VCEO = 120V Min D High Gain Bandwidth Product: fT = 400MHz Typ D Low Reverse Transfer Capacitance and Excellent High Frequency Characteristics:	Original	NTE2574 NTE2575 400MHz NTE2574: NTE2575: NTE2574 NTE2575	PDF
NTE2574 Abstract: NTE2575 Text: NTE2574 NPN & NTE2575 (PNP) Silicon Complementary Transistors Video Output for HDTV Features: D High Collector Emitter Breakdown Voltage: VCEO = 120V Min D High Gain Bandwidth Product: fT = 400MHz Typ D Low Reverse Transfer Capacitance and Excellent High Frequency Characteristics:	Original	NTE2574 NTE2575 400MHz NTE2574: NTE2575: NTE2574 NTE2575	PDF
NTE2566 Abstract: NTE2567 hFE is transistor to220 Text: NTE2566 NPN & NTE2567 (PNP) Silicon Complementary Transistors High Current, High Speed Switch Features: D Low Saturation Voltage D Fast Switching Speed D Isolated TO220 Type Package Absolute Maximum Ratings: (TC = +25°C unless otherwise specified) Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V	Original	NTE2566 NTE2567 NTE2566 NTE2567 hFE is transistor to220	PDF
NTE2571 Abstract: NTE2570 Text: NTE2570 NPN & NTE2571 (PNP) Silicon Complementary Transistors High Current Switch Features: D Low Collector–Emitter Saturation Voltage D High Current Capacity Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 90V	Original	NTE2570 NTE2571 10IB1 10IB2 NTE2571 NTE2570	PDF
NTE2673 Abstract: TO220FP Text: NTE2673 NPN & NTE2674 (PNP) Silicon Complementary Transistors General Purpose Power TO220FP Type Package Features: D Low Collector−Emitter Saturation Voltage: VCD(sat) = 0.5V Typ (IC/IB = 2A/0.2A) Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)	Original	NTE2673 NTE2674 O220FP 200mA, 500mA, -500mA, 30MHz, NTE2673 TO220FP	PDF
W1P 59 transistor Abstract: W1p 48 TRANSISTOR transistor w1P 83 ICM AP 1703 transistor SMD marked RNW transistor BD139 PH 71 W1P 66 transistor transistor w1P 91 Pnp transistor smd ba rn w1p npn Text: Philips S em iconductors S urface m oun ted sem ico n d u cto rs C on ten ts PART A page SELECTION GUIDE General purpose transistors 4 High frequency transistors 8 Broadband transistors 8 Switching transistors 10 Power transistors for switching 12 Low-noise transistors	OCR Scan	197/197X S310N W1P 59 transistor W1p 48 TRANSISTOR transistor w1P 83 ICM AP 1703 transistor SMD marked RNW transistor BD139 PH 71 W1P 66 transistor transistor w1P 91 Pnp transistor smd ba rn w1p npn	PDF
BD 669 Abstract: No abstract text available Text: BDV66A; B BDV66C; D DARLINGTON POWER TRANSISTORS P-N-P epitaxial base Darlington transistors for audio output stages and general am plifier and switching applications. N-P-N complements are B D V 6 7 A ; B; C and D. Matched complementary pairs can be supplied.	OCR Scan	BDV66A; BDV66C; bbS3T31 0Q34A23 bbS3331 0034A24 BD 669	PDF
h 669A Abstract: 669A 649a C649A h 649A Text: CSB649, CSB649A CSD669, CSD669A CSB649, 649A CSD669, 669A PNP PLASTIC POWER TRANSISTORS NPN PLASTIC POWER TRANSISTORS Low frequency Power Amplifier PIN CONFIGURATION 1. EMITTER 2. COLLECTOR 3. BASE DIM MIN. MAX. A B 7 .4 7.8 10.5 10.8 C 2.4 2.7 D 0.7 0.9 E	OCR Scan	CSB649, CSB649A CSD669, CSD669A h 669A 669A 649a C649A h 649A	PDF
669a Abstract: No abstract text available Text: CSB649, CSB649A CSD669, CSD669A 1 CSB649, 649A CSD669, 669A PNP PLASTIC POWER TRANSISTORS NPN PLASTIC POWER TRANSISTORS Low frequency Power Amplifier PIN CONFIGURATION 1. EMITTER 2. COLLECTOR 3. BASE DIM MIN. MAX. A e 7.4 7.8 10.5 10.8 c 2.4 2.7 D 0.7 0.9	OCR Scan	CSB649, CSB649A CSD669, CSD669A 669a	PDF
darlington complementary power amplifier Abstract: No abstract text available Text: BDV66A; B BDV66C;D PHILIPS INTERNATIONAL SbE D • 711002b DDM337Ô 5 m ■ PHIN T - 3 3 - 3 ’ / DARLINGTON POWER TRANSISTORS P-N-P epitaxial base Darlington transistors fo r audio output stages and general amplifier and switching applications. N-P-N complements are BDV67A; B; C and D. Matched complementary pairs can be	OCR Scan	BDV66A; BDV66C 711002b DDM337Ô BDV67A; BDV66A OT-93 BDV66C; darlington complementary power amplifier	PDF

BDV64 Abstract: BDV65 BDV65B 1000 w audio amplifier diagram Text: BDV65; 65A BDV65B; 65C SILICON DARLINGTON POWER TRANSISTORS N-P-N epitaxial base transistors in m onolithic Darlington circu it fo r audio o utput stages and general am plifier and switching applications. P-N-P complements are BDV64, 64B and 64C. QUICK REFERENCE D A T A	OCR Scan	BDV65; BDV65B; BDV64, OT-93. BDV65 7z77501 BDV64 BDV65B 1000 w audio amplifier diagram	PDF
pn2222a Abstract: PN2222 pnp PN2222A le PN2222 Text: II N AMER PHILIPS/DISCRETE bTE D • bbSB'm DDSflOMb 244 ■ APX PN2222 PN2222A SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N silicon planar epitaxial transistors in a plastic TO-92 envelope prim arily intended fo r linear and switching applications. P-N-P complement is PN2907/2907A.	OCR Scan	PN2222 PN2222A PN2907/2907A. MBB012 pn2222a PN2222 pnp PN2222A le	PDF
bc 184 transistor Abstract: BC857AR transistors 3Kr transistors marking HJ BC856AR 3AR 3ER 3FR on TRANSISTOR BC 187 TRANSISTOR BC 187 BC856 BC857 Text: 1 N AMER PHILIPS/DISCRETE ^53*131 G015537 Ö OLE D BC856 BC857 BC858 T ' W - i S ' SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P transistors, in a SOT-23 plastic envelope for use in driver and output stages of audio amplifiers in thick and thin-film circuits.	OCR Scan	LbS3T31 G015537 BC856 BC857 BC858 OT-23 200/LIA 00155M3 bc 184 transistor BC857AR transistors 3Kr transistors marking HJ BC856AR 3AR 3ER 3FR on TRANSISTOR BC 187 TRANSISTOR BC 187	PDF
d 417 transistor Abstract: 417 TRANSISTOR 8D239 80239 80239c 80240 BD239 BD239A BD239B BD240 Text: 01 3875081 G E SOLID STATE Pro Electron Pow er Transistors D E • 3 fl"? S D fl i 01E 17527 D 0 LI ji 7 5 dï 7- / BD240, BD240A, BD240B, BD240C File Number 670 Epitaxial-Base Silicon P-N-P	OCR Scan	BD240, BD240A, BD240B, BD240C BD239, BD239A, BD239B, BD239C d 417 transistor 417 TRANSISTOR 8D239 80239 80239c 80240 BD239 BD239A BD239B BD240	PDF
Untitled Abstract: No abstract text available Text: DTC124TE/DTC124TU A/DTC124TKA h ~p > v X £ /Transistors DTC124TE/DTC124TUA/DTC124TKA Digital Transistors Includes Resistors ^/Transistor Switch • • W g x fa ig l/D im e n s io n s (Unit : mm) », a t i m <d î ' H î i t \ m 4- u T - < > A — 2 ! § t f 't g j & T £ 5 ( ^ « a ï g E l	OCR Scan	DTC124TE/DTC124TU /DTC124TKA DTC124TE/DTC124TUA/DTC124TKA 50m100m	PDF
philco transistors Abstract: DS503 2N408 DELCO Radio transistor philco westinghouse transistors 163-H72 westinghouse transistors D3052 2T862 westinghouse DIODES Text: SEMICONDUCTOR COMPLEMENT MANUAL TABLE OF CONTENTS Transistors — Home Equipment Page S Transistors — Auto Radios Page 28 Semiconductor Diodes — Home Equipment Page 25 Silicon Rectifiers Page 60 Mechanical Specifications and Connections Page 62 S Y L V A N IA ELEC TR IC P R O D U C T S INC.	OCR Scan	2N252 2N309 2N140 521-6T2 528-6T2 002DIA SR200 SR500 philco transistors DS503 2N408 DELCO Radio transistor philco westinghouse transistors 163-H72 westinghouse transistors D3052 2T862 westinghouse DIODES	PDF
BDV66D Abstract: BDV68 BDV68C BDV66C A11T darlington pair transistor BDV66A BDV67A M0433 Text: BDV66A; B _ JI BDV66C; D PHILIPS INTERNATIONAL SbE D • 711002b 0043370 S41 * P H I N ~ r -3 3 -y i DARLINGTON PO W ER TRANSISTO RS P-N-P epitaxial base Darlington transistors for audio output stages and general amplifier and switching	OCR Scan	BDV66A; BDV66C; 711002b m04337fl T-33-3 BDV67A; BDV66A T-33-31 BDV66D BDV68 BDV68C BDV66C A11T darlington pair transistor BDV67A M0433	PDF
NS 8002 1151 Abstract: MQ3251A Text: MOTOROLA SC XSTRS/R F 4bE D • L,3b7254 00=12431 T ■ M O TbTH VZS MOTOROLA SEMICONDUCTOR TECHNICAL DATA 1 DM0 Discrete M ilitary Products PIMP Silicon Dual Quad Sm all-Signal Transistors M D 3251A M D 3251A F (Duals) M H Q 3251A M Q 3251A m in t (Quads)	OCR Scan	3b7254 MIL-S-19500/323 O-116) NS 8002 1151 MQ3251A	PDF
NS 8002 1151 Abstract: SM 8002 MD4261 case 60-01 8002 1028 MHQ4261 Text: m > E MOTOROLA D SEMICONDUCTOR b3b7254 00^2441 2 • H 0 T b 'F -*4 V 2 .$ MOTOROLA SC XST RS/R F TECHNICAL DATA Discrete M ilitary Products PIMP S ilicon Dual/Q uad Sm all-Signal Transistors DM0 M D4261 M D 4261F (Duals) MHQ4261 MQ4261 //I# /// (Quad)	OCR Scan	b3b7254 D4261 4261F MHQ4261 MQ4261 MIL-S-19500/511 Dissipatio05 O-116) NS 8002 1151 SM 8002 MD4261 case 60-01 8002 1028	PDF
2N2222A 338 Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931 Text: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK	OCR Scan	2CY17 2CY18 2CY19 2CY20 2CY21 500MA 500MA 2N2222A 338 TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931	PDF

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TRANSISTORS D 669 Search Results

TRANSISTORS D 669 Result Highlights (5)

TRANSISTORS D 669 Datasheets Context Search

NTE2548

NTE2551

Untitled

NTE2569

NTE2574

NTE2574

NTE2566

NTE2571

NTE2673

W1P 59 transistor

BD 669

h 669A

669a

darlington complementary power amplifier

BDV64

pn2222a

bc 184 transistor

d 417 transistor

Untitled

philco transistors

BDV66D

NS 8002 1151

NS 8002 1151

2N2222A 338