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    TRANSISTORS FOR OSCILLATORS UHF Search Results

    TRANSISTORS FOR OSCILLATORS UHF Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    GCM188D70E226ME36D Murata Manufacturing Co Ltd Chip Multilayer Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd
    GRM022C71A472KE19L Murata Manufacturing Co Ltd Chip Multilayer Ceramic Capacitors for General Purpose Visit Murata Manufacturing Co Ltd
    GRM033C81A224KE01W Murata Manufacturing Co Ltd Chip Multilayer Ceramic Capacitors for General Purpose Visit Murata Manufacturing Co Ltd
    GRM155D70G475ME15D Murata Manufacturing Co Ltd Chip Multilayer Ceramic Capacitors for General Purpose Visit Murata Manufacturing Co Ltd
    GRM155R61J334KE01D Murata Manufacturing Co Ltd Chip Multilayer Ceramic Capacitors for General Purpose Visit Murata Manufacturing Co Ltd

    TRANSISTORS FOR OSCILLATORS UHF Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    n3904

    Abstract: CEB npn BF509 pnp BF959 BF240 CEB BF255 BF371 MOTOROLA MPSH81 BF241 CEB MPS3640
    Text: SMALL-SIGNAL TRANSISTORS — PLASTIC continued RF Transistors The RF transistors are designed for Small Signal am plification from RF to VHF/UHF frequencies. They are also used as mixers and oscillators in the same frequency ranges. Several types are AGC characterised. The transistors are listed in


    OCR Scan     		mpsh17 mpsh10 bf374 bf375 bf959 mps918 n3904 2n3903 2n4400 mps2369 CEB npn BF509 pnp BF959 BF240 CEB BF255 BF371 MOTOROLA MPSH81 BF241 CEB MPS3640 PDF

    2N3866 MOTOROLA

    Abstract: 2N2857 MOTOROLA MOTOROLA 2N5179 2N2857 MRF2369 2N5179 transistors for uhf oscillators transistor 2N5179 2N6603 2N4959 MOTOROLA
    Text: RF SMALL-SIGNAL TRANSISTORS continued UHF and Microwave Oscillators The transistors listed below are for U H F and microwave oscillator applications as initial signal sources or as output stages of limited range transmitters. Devices are listed in order of increasing output power.


    OCR Scan     		2N5179 2N2857 2N3839 MM8009 2N5108 2N3866 2N5829 2N5031 2N3866 MOTOROLA 2N2857 MOTOROLA MOTOROLA 2N5179 MRF2369 transistors for uhf oscillators transistor 2N5179 2N6603 2N4959 MOTOROLA PDF

    2N5436

    Abstract: 2N5485 2N5485 MICRO ELECTRONICS 2N5434 2N5484 2N5486 2N5484 MICRO ELECTRONICS
    Text: 2N5484 2N5485 2N5486 2N5434, 2N5485 and 2N5486 are N-Channel Junction Pfasttc T O -9 2 Field Effect designed Transistors. for oscillators VHF / UHF and They are amplifiers, analog mainly mixers, switches. Bottom View Source & O ta in interchengeebie ABSOLUTE MAXIMUM RATINGS


    OCR Scan     		2N5484 2N5485 2N5486 2N5434, 2N5436 360mW 2N5484 2N5485 2N5486 2N5485 MICRO ELECTRONICS 2N5434 2N5484 MICRO ELECTRONICS PDF

    SIT Static Induction Transistor

    Abstract: create uhf vhf tv matching transformer AR165S Granberg AR-165S power bjt advantages and disadvantages all mosfet vhf power amplifier narrow band rf POWER BJTs mrf154 amplifier bjt ce amplifier
    Text: Order this document by AN1529/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE AN1529 RF Power Circuit Concepts Using FETs and BJTs Prepared by: H. O. Granberg Principal Staff Engineer Motorola Semiconductor Products Sector Phoenix, Arizona Similarities and differences in RF power circuits using silicon Field Effect Transistors and Bipolar Junction Transistors are discussed along with their characteristics and performance. The discussion is limited to amplifiers and multipliers. Oscillators are usually designed for low signal levels, which are then amplified. Although power oscillators are


    Original     		AN1529/D AN1529 AN1529/D* SIT Static Induction Transistor create uhf vhf tv matching transformer AR165S Granberg AR-165S power bjt advantages and disadvantages all mosfet vhf power amplifier narrow band rf POWER BJTs mrf154 amplifier bjt ce amplifier PDF

    2N3303

    Abstract: MM8520 2n6431 2n3736 MM420 2n3712 2N4209 2N3252 MOTOROLA 2n914 jantx 2n3506 jan
    Text: 6367254 MOTOROLA SC XSTRS/R 80C 7 6 6 9 8 F tIOTOROLA SC -CXSTRS/R F> Âü D Difl t,3b?554 □ D 7 b b cifi 3 Low Frequency — Small-Signal Metal CASE 22-03.TO-18 . CASE 20-03 . TÔr72 Motorola Small-Signal Metal Can Transistors are designed for use as General-Purpose Amplifiers, High-Speed Switches, HighVoltage Amplifiers, Low-Level/Low-Noise Amplifiers, HighFrequency Oscillators, Choppers, and Darlingtons. These de­


    OCR Scan     		MIL-19500 2N3303 MM8520 2n6431 2n3736 MM420 2n3712 2N4209 2N3252 MOTOROLA 2n914 jantx 2n3506 jan PDF

    N-Channel JFET FETs

    Abstract: P-Channel RF Amplifier jfets MMBF5457LT1 MMBF5484LT1
    Text: SOT-23 TRANSISTORS continued Unipolar (Field Effect) Transistors (JFETs) RF JFETs The following is a list of surface mount FETs which are intended for VHF/UHF RF amplifier applications. Pinout: 1-Drain, 2-Source, 3-Gate NF Device Y»s @ V ds Marking dB Typ


    OCR Scan     		OT-23 MMBFJ309LT1 MMBFJ310LT1 MMBFU310LT1 MMBF4416LT1 MMBF5484LT1 MMBFS486LT1 MMBF48S6LT1 MMBF4391LT1 MMBF4860LT1 N-Channel JFET FETs P-Channel RF Amplifier jfets MMBF5457LT1 PDF

    Motorola rectifiers zener diodes

    Abstract: motorola diode smb diode zener motorola
    Text: Table of Contents D iscre te P ro d u c t L in e s . 8C-70/SOT-323 D e vice s. RF Transistors .


    OCR Scan     		8C-70/SOT-323 OT-23 Motorola rectifiers zener diodes motorola diode smb diode zener motorola PDF

    transistors for uhf oscillators

    Abstract: MOTOROLA LINEAR HF Microwave oscillators Amateur
    Text: Table of Contents H Pag» Number RF Power TMOS FETs To 150 MHz HF/SSB . 1-3 1-3 To 225 MHz VHF AM /FM .


    OCR Scan     		PDF

    1am surface mount diode

    Abstract: c845 2GM sot-23 transistor G1 TRANSISTOR SOT 23 PNP 2F PNP SOT23 P1F marking AS3 SOT223 p2f sot-223 c845 TO 92 SOT-223 P1f
    Text: ON Semiconductor Bipolar Transistors Bipolar Transistors Continued Plastic-Encapsulated Transistors (Continued) Plastic-Encapsulated Multiple Transistors Plastic-Encapsulated High-Voltage Amplifier Transistors (Case 29-04 Ñ TO-226AA (TO-92) Ñ PNP) hFE @ IC


    Original     		O-226AA O-236AB OT-23) OT-223) MMBTA42LT1 MMBT5551LT1 BSP52T1 1am surface mount diode c845 2GM sot-23 transistor G1 TRANSISTOR SOT 23 PNP 2F PNP SOT23 P1F marking AS3 SOT223 p2f sot-223 c845 TO 92 SOT-223 P1f PDF

    transistors for uhf oscillators

    Abstract: MMBT2369LT1 sot-23 Marking 3D MMBTH69 transistors for oscillators uhf
    Text: SOT-23 TRANSISTORS continued Switching Transistors The following tables are a listing of devices intended for high-speed, low saturation voltage, switching applications. These devices have very fast switching times and low output capacitance for optimized switching performance.


    OCR Scan     		OT-23 MMBT2369LT1 BSV52LT1 MMBT3640LT1 intendeH10LT1 MMBT918LT1 MMBTH24LT1 MMBTH81LT1 MMBTH69LT1 MMBT404ALT1 transistors for uhf oscillators sot-23 Marking 3D MMBTH69 transistors for oscillators uhf PDF

    transistor marking 3em

    Abstract: MMBTH10
    Text: Shanghai Lunsure Electronic Technology Co.,Ltd Tel:0086-21-37185008 Fax:0086-21-57152769 MMBTH10 Features • • • Designed for VHF/UHF Amplifier applications and high output VHF Oscillators High current gain bandwidth product Marking Code: 3EM NPN VHF/UHF


    Original     		MMBTH10 OT-23 100MHz, 300us, transistor marking 3em MMBTH10 PDF

    transistor marking 3em

    Abstract: transistors for uhf oscillators marking code 3EM 400uAdc
    Text: MCC   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# MMBTH10 Features • • • Designed for VHF/UHF Amplifier applications and high output VHF Oscillators High current gain bandwidth product


    Original     		MMBTH10 OT-23 300us, transistor marking 3em transistors for uhf oscillators marking code 3EM 400uAdc PDF

    MSC2404C

    Abstract: MSC1621T1 RB
    Text: SC-59 Devices_ Maximum die size 25 mil x 25 mil CASE 318D-03 General-Purpose Transistors Pinout: 1-Emitter, 2-Base, 3-Collector Devices are listed in order of descending breakdown voltage. hpE Device @ lc fT Marking V BR CEO Min Max mA


    OCR Scan     		SC-59 318D-03 MSD601-RT1 MSD601-ST1 MSD602-RT1 MSD1328-RT1 MSB709-RT1 MSB709-ST1 MSB710-QT1 MSB710-RT1 MSC2404C MSC1621T1 RB PDF

    Untitled

    Abstract: No abstract text available
    Text: MCC   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# MMBTH10 Features • • • Designed for VHF/UHF Amplifier applications and high output VHF Oscillators High current gain bandwidth product


    Original     		MMBTH10 OT-23 100uAdc, 10uAdc, 25Vdc 100MHz, 300us, PDF

    i2c-bus "volume control"

    Abstract: TDA3653B TDA3810 vga to tv converter ic audio video uhf transmitter circuit TDA8361 audio video uhf transmitter tda8362 tda vertical IC tv crt TDA2595
    Text: Philips Semiconductors Semiconductors for Televsion and Video Systems Functional index Types added to the range since the last issue of the IC02 CD-ROM 1997 issue are shown in bold print. In addition, types marked with an asterisk (*) are also in this booklet.


    Original     		SAB6456; SAB6456T divide-by-64/divide-by-256 TDA8725T TSA5511 TSA5512 TSA5514 NE/SA5204A NE/SA/SE5205A NE/SA5209 i2c-bus "volume control" TDA3653B TDA3810 vga to tv converter ic audio video uhf transmitter circuit TDA8361 audio video uhf transmitter tda8362 tda vertical IC tv crt TDA2595 PDF

    Untitled

    Abstract: No abstract text available
    Text: MCC   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components MMBTH10 Features • • • • Designed for VHF/UHF Amplifier applications and high output VHF Oscillators


    Original     		MMBTH10 OT-23 PDF

    Untitled

    Abstract: No abstract text available
    Text: MCC   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components MMBTH10 Features • • • x Designed for VHF/UHF Amplifier applications and high output VHF Oscillators


    Original     		MMBTH10 OT-23 PDF

    GA900

    Abstract: NPN RF Amplifier pnp 8 transistor array RF Bipolar Transistor DIP array resistors
    Text: INFORMATION NOTE GENNUM C O R P O R A T I O N 510-22 RF BIPOLAR GA900 SEMICUSTOM ARRAY Gennum offers a 2 GHz bipolar uncommitted array that is designed for RF circuit applications required in low power mobile VHF / UHF communications. Using a linear process, the array is suitable for control circuitry,


    OCR Scan     		GA900 100jiA NPN RF Amplifier pnp 8 transistor array RF Bipolar Transistor DIP array resistors PDF

    BFT97

    Abstract: Siemens 1985 BFT65 bfr91a siemens BFQ64P BFT98T BFS55A bf254 BFR96S
    Text: S IE M E N S / SPCLt SEMICONDS ' ' ?QC D • fiS 3b 3E Q 0013325 1 ■ RF Transistors Type PNP= P NPN= N Typical Application epitaxial=E planar = PL E, PL Maximum Ratings Vcbo V VcEO (V) ^80 (V) (mA) fe ft (°C) 40 25 4 25 150 Plot (mW) (°C/W) 500 N Uncontrolled TV IF amplifier stages


    OCR Scan     		BF199 BF240 BF241 BF254 BF255 BF414 BF420 BF420L BF421 BF421L BFT97 Siemens 1985 BFT65 bfr91a siemens BFQ64P BFT98T BFS55A BFR96S PDF

    Voltage Controlled Oscillators

    Abstract: SAW Oscillators clapp oscillator bjt oscillator BJT phase shift oscillator rohde tuner rohde BB141 noise diode generator power bjt advantages and disadvantages
    Text: VOLTAGE CONTROLLED OSCILLATORS INTRODUCTION The steady-state loop equations are In simple terms, an oscillator is an amplifier where sufficient energy is coupled back from the output to the input to become unstable and start oscillating. The output port then provides the wanted output


    Original     		PDF

    4327

    Abstract: Am tuning DIODE KV2101 KV2201 KV2301 KV2401 1N4148 1N914 KV1401 KV1501
    Text: TOC Application Notes HF-VHF-UHF VOLTAGE CONTROLLED OSCILLATORS USING HYPERABRUPT TUNING DIODES INTRODUCTION Modern systems require VCO’s voltage controlled oscillators with stringent frequency range and linearity requirements which can only be met by the use of


    Original     		PDF

    N-Channel JFET FETs

    Abstract: ft960 Field Effect Transistors C847 P-Channel Depletion Mosfets P-Channel Depletion Mode FET p-channel jfet rf JFET with Yos MTP75N06HD BS17
    Text: ON Semiconductor Field Effect Transistors and Power TMOS MOSFETs ¨ Field Effect Transistors Field Effect Transistors JFETs TMOS MOSFETs JFETs operate in the depletion mode. They are available in both P- and N-channel and are offered in both Through-hole and Surface Mount Packages. Applications include generalpurpose amplified, switches and choppers, and RF amplifiers and mixers. These devices are


    Original     		O-226AA O-220AB MTP6P20E MTP12P10 OT-223) MTP50P03HDL MMFT960T1 FT960 N-Channel JFET FETs Field Effect Transistors C847 P-Channel Depletion Mosfets P-Channel Depletion Mode FET p-channel jfet rf JFET with Yos MTP75N06HD BS17 PDF

    marking NC sot23

    Abstract: smd code marking sot23 RF Transistors sot-23 marking code LA SMD sot-23 MARKING CODE N C SMD MARKING CODE FEW SMD Transistors nc SOT SMD IC smd code marking 3 1 sot23 BF579
    Text: HIGH FREQUENCY SMD TRANSISTORS DESCRIPTION •Philips Components high-frequency transistors fill the gap between general purpose transistors and broadband transistors by offering transition frequencies from a few hundred megahertz to about 1 gigahertz. Applications


    OCR Scan     		OT-23 BFS18 BFS19 BFS20 BF840 BF841 BF579 BF536 BF767 BF824 marking NC sot23 smd code marking sot23 RF Transistors sot-23 marking code LA SMD sot-23 MARKING CODE N C SMD MARKING CODE FEW SMD Transistors nc SOT SMD IC smd code marking 3 1 sot23 PDF

    SMD M1A

    Abstract: marking g3p marking L2 SOT23 6 m1a smd smd marking code m1a L2 SOT23 BF660 smd transistors smd code marking sot23 smd transistors code
    Text: High Frequency SMD Transistors High Frequency SMD® Transistors Description Mechanical Data Philips Components high-frequency transistors fill the gap between general purpose transistors and wideband transistors by offering transition frequencies from a few hun­


    OCR Scan     		OT-23 OT-23 BF536 BF550 BF569 BF579 BF660 BF747 BF767 BF824 SMD M1A marking g3p marking L2 SOT23 6 m1a smd smd marking code m1a L2 SOT23 smd transistors smd code marking sot23 smd transistors code PDF