74hc06
Abstract: equivalent components for scr 207a SCR 207A 15KW igbt 200 A 1200 V TLP250 200V igbt 15KW igbt SCR 100A 1200V 0.75KW* LG IGBT
Text: 목차 각종 전력 소자와 IGBT 2 IGBT 모듈의 회로 구성 4 IGBT 모듈의 정격 및 특성 6 IGBT의 모듈 손실과 방열 10 IGBT 모듈의 게이트 구동 20 상부 구동 24 3상 브리지 인버터 26 단락 및 과전압 보호 30 스너버 회로
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100kW
74hc06
equivalent components for scr 207a
SCR 207A
15KW igbt 200 A 1200 V
TLP250
200V igbt
15KW igbt
SCR 100A 1200V
0.75KW* LG
IGBT
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TLP250 MOSFET DRIVER application note
Abstract: TLP250 MOSFET DRIVER calculation of IGBT snubber 74hc06 tlp250 equivalent TLP250 igbt driver applications TLP250 application note difference between IGBT and MOSFET IN inverter SCR 207A scr driver ic for rectifier 3 phase
Text: CONTENTS POWER DEVICES and IGBT 2 Variation of NIEC’s IGBT Modules 4 Ratings and Characteristics 6 Power Loss and Thermal Design 10 Gate Drive 20 High Side Drive 24 3-Phase Bridge Inverter 26 Short circuit and Over-voltage Protection 30 Snubber 33 Parallel Operation
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00A/600V
00A/1200V
TLP250 MOSFET DRIVER application note
TLP250 MOSFET DRIVER
calculation of IGBT snubber
74hc06
tlp250 equivalent
TLP250 igbt driver applications
TLP250 application note
difference between IGBT and MOSFET IN inverter
SCR 207A
scr driver ic for rectifier 3 phase
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LMU16GMB
Abstract: No abstract text available
Text: L M U 1 6 /2 1 6 16 x 16-bit Parallel Multiplier D E V IC E S IN C O R P O R A T E D FEATURES DESCRIPTION □ 45 ns Worst-Case Multiply Time □ Low Power CMOS Technology □ Replaces TRW MPY016/TMC216, Cypress CY7C516, IDT 7216L, and AMD Am29516 □ Two's Complement, Unsigned, or
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16-bit
MPY016/TMC216,
CY7C516,
7216L,
Am29516
MIL-STD-883,
64-pin
68-pin
LMU16GMB
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led 7 segment anode TIL 702
Abstract: trw 007 diodes TDDG 5250 m 817 optron telefunken transistor opto smd code marking NEC TDDG 5250 hoa 865 DIODE PK IN 5401 7segment sm 4150
Text: CONTENTS Alphanumeric Index 5 Symbol Designation 7 Type Designation Systems — for LEDs — for Displays — for IR-Emitters — for Laser-Diodes — for Optical Switches 8 8 8 8 8 Classification Code for all LEDs and Displays — for LEDs — Displays 9
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10x10
led 7 segment anode TIL 702
trw 007 diodes
TDDG 5250 m
817 optron
telefunken transistor
opto smd code marking NEC
TDDG 5250
hoa 865
DIODE PK IN 5401
7segment sm 4150
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EDI411024C
Abstract: No abstract text available
Text: m o _ EDI411024C i Electronic D*4gn» Ine. High Performance Megabit Monolithic DRAM 1Mx1 Dynamic RAM CMOS, Monolithic railLDHflDNAmf Features The ED 1411024C is a high performance, low power CMOS Dynamic RAM organized as 1 Megabit x1. The use of triple-layer polysilicon process, combined with
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EDI411024C
1411024C
EDI411024C
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Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT f / PD42S4260AL, 424260AL 3.3 V OPERATION 4 M-BIT DYNAMIC RAM 256 K-WORD BY 16-BIT, FAST PAGE MODE, BYTE READ/WRITE MODE Description The ¿¡PD42S4260AL, 424260A L are 262,144 w ords by 16 bits CMOS dynam ic RAMs. The fast page mode and
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PD42S4260AL,
424260AL
16-BIT,
24260A
PD42S4260AL
44-pin
40-pin
P40LE-400A-2
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY SPECIFICATION REV. 0 G M 7 1 C 1 0 0 0 1048576 WORDS x 1 BIT CMOS DYNAMIC RAM Description Pin Configuration 18 PLASTIC DIP TOP VIEW The GM 71C1000 is the new generation dynamic RAM organized 1048576 x 1 Bit. GM 71C1000 has realized higher density, higher performance and various func
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71C1000
GM71C1000
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424260-70
Abstract: 424260-70 nec japan 424260-80 PD424260LE
Text: DATA SHEET MOS INTEGRATED CIRCUIT ¿¿P D 4 2 4 2 6 0 4 M-BIT DYNAMIC RAM 256 K-WORD BY 16-BIT, FAST PAGE MODE, BYTE READ/WRITE MODE Description The /uPD424260 is a 262,144 words by 16 bits dynamic CMOS RAM. The fast page mode and byte read/write mode capability realize high speed access and low power consumption.
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16-BIT,
uPD424260
PD424260
44-pin
40-pin
PD424260
IR35-207-3
424260-70
424260-70 nec japan
424260-80
PD424260LE
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GM71C1000-80
Abstract: GM71C1000 GM71C1000Z80 GM71C1000-10 GM71C1000-12
Text: PRELIMINARY SPECIFICATIO N REV. 0 G M 71 C 10 00 1048576 WORDS x 1 BIT CMOS DYNAMIC RAM Pin Configuration Description 18 PLASTIC DIP TOP VIEW The G M 7 1 C 1 0 0 0 is th e new generation d y n am ic RAM organized 10 4857 6 x 1 Bit. G M 7 1 C 1 0 0 0 has realized
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GM71C1000
GM71C1000
GM71C1000-80
GM71C1000Z80
GM71C1000-10
GM71C1000-12
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Untitled
Abstract: No abstract text available
Text: TT M/HITE /MICROELECTRONICS 4Mx4 CMOS EDO Dynamic RAM 3.3V WPDE4M4V-XMJX PRELIMINARY* PLASTIC PLUS FEATURES • Fast Access Time tRAc : 60, 70ns PIN CONFIGURATION Power Supply: 3.3V ±0.3V 300 MIL SOJ TOP VIEW Vcc [ 1 ■ Packaging ■ Industrial and M ilita ry Temperature Ranges
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Untitled
Abstract: No abstract text available
Text: Order this document by MCM318165CV/D SEMICONDUCTOR TECHNICAL DATA - 1M Advance Information MCM318165CV 16M CMOS Wide DRAM Family E D O , 1 M x 1 6 , 1 K EDO
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MCM318165CV/D
MCM318165CV
MCM318165CV)
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HY5117400BT
Abstract: HY5117400B
Text: HY5117400B, HY5116400B -HYUNDAI 4M X 4-bit CMOS DRAM DESCRIPTION ORDERING INFORMATION This family is a 16M bit dynamic RAM organized 4,194,304 x 4-bit configuration with Fast Page mode CMOS DRAMs. Fast Page mode offers high speed random access of memory cells within the same row.
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HY5117400B,
HY5116400B
HY5117400BJ
HY5117400BSLJ
HY5117400BT
HY5117400BSLT
HY5116400BJ
HY5116400BSLJ
HY5116400BT
HY5116400BSLT
HY5117400B
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Untitled
Abstract: No abstract text available
Text: >«YÜHD«I > -• HYM536810E M1-Series 8Mx36 bit FP DRAM MODULE based on 4Mx4 DRAM, with Parity, 5V, 2K-Refresh GENERAL DESCRIPTION The HYM536810E M1-Series is a 8Mx36-bit Fast Page mode CMOS DRAM module consisting of sixteen HY5117400C in 24/26 pin SOJ and eight HY514100A in 20/26 pin SOJ on a 72 pin glass-epoxy printed
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HYM536810E
8Mx36
8Mx36-bit
HY5117400C
HY514100A
HYM536810EM1
HYM536810EMG1
72-Pin
256ms
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Untitled
Abstract: No abstract text available
Text: HB 56RW872ES Series 8,388,608-Word x 72-Bit ECC High Density Dynamic RAM Module HITACHI Preliminary Rev. 0 Dec. 19, 1995 The HB56RW 872ES belongs to 8 Byte DIM M (Dual In-Line M emory M odule) family, and has been developed as an optim ized main memory solution for 4 and 8 Byte processor applications.
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56RW872ES
608-Word
72-Bit
HB56RW
872ES
16-Mbit
16-bit
74LVT16244)
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siemens 3ld 25
Abstract: TA5C HYB3116405BT
Text: r i E u r f t k c j i ç m ç r a j INFORMATION NOTE F o u rth G e n e r a t io n 16M - D R A M s C h a ra c te risa tio n D ata 3 .3 V p ro d u cts "f n c I r^ C J mftjT0M11.DOC SiEM ENS _ 3,3V lé M - D H A M s
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inioifiM11
16M-DRAMs
siemens 3ld 25
TA5C
HYB3116405BT
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Untitled
Abstract: No abstract text available
Text: O K I Semiconductor MSM6587 524,288-WORD x 1-BIT SERIAL REGISTER GENERAL DESCRIPTION M SM 6587 is a serial register in 524,288 words x 1 bit configuration featuring medium speed operation with low-pow er consumption. A refresh timer and refresh counter are built
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MSM6587
288-WORD
18-pin
MSM6587s
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Untitled
Abstract: No abstract text available
Text: HY51V 16100B 'H Y U N D A I 1 6 M x 1 -bit CMOS DRAM DESCRIPTION ORDERING INFORMATION This family is a 16M bit dynamic RAM organized 16,777,216 x 1-bit configuration with Fast Page mode CMOS DRAMs. Fast Page mode offers high speed random access of memory cells within the
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HY51V
16100B
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Untitled
Abstract: No abstract text available
Text: n a ry S pee. MITSUBISHI LSIs Specifications subject to change without notice. MH8V6445AWZJ -5, -6 HYPER PAGE MODE 536870912 - BIT 8388608 - WORD BY 64 - BIT DYNAMIC RAM DESCRIPTION PIN CONFIGURATION The MH8V6445AWZJ is 8388608-word x 64-bit dynamic ram module. This consist of eight industry standard
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MH8V6445AWZJ
8388608-word
64-bit
MIT-DS-0098-0
25/FEB.
0-8600-Sa-Â
80988S8
21-60Z89SS
3Q01AI
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI LSIs ìin a ry Spee. Specifications subject to change without notice. MH4V7245AWXJ -5, -6 HYPER PAGE MODE 301989888 - BIT 4194304 - WORD BY 72 - BIT DYNAMIC RAM DESCRIPTION The MH4V7245AWXJ is 4194304-word x 72-bit dynamic ram module. This consist of four industry standard 4M x
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MH4V7245AWXJ
4194304-word
72-bit
MIT-DS-0095-0
21/Oct
Z66l7
8886861-OS
3Q01A
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Untitled
Abstract: No abstract text available
Text: n a ry S pee. MITSUBISHI LSIs Specifications subject to change without notice. MH8V7245AZTJ -5, -6 HYPER PAGE MODE 603979776 - BIT 8388608 - WORD BY 72 - BIT DYNAMIC RAM DESCRIPTION PIN CONFIGURATION The MH8V7245AZTJ is 8388608-word x 72-bit dynamic ram module. This consist of nine industry standard 8M x 8
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MH8V7245AZTJ
8388608-word
72-bit
MIT-DS-0047-1
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Untitled
Abstract: No abstract text available
Text: n a ry S pee. MITSUBISHI LSIs Specifications subject to change without notice. MH8V645AWZJ -5, -6 HYPER PAGE MODE 536870912 - BIT 8388608 - WORD BY 64 - BIT DYNAMIC RAM DESCRIPTION PIN CONFIGURATION The MH8V645AWZJ is 8388608-word x 64-bit dynamic ram module. This consist of eight industry standard
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MH8V645AWZJ
8388608-word
64-bit
MIT-DS-0121-0
25/FEB.
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Untitled
Abstract: No abstract text available
Text: n a ry S pee. MITSUBISHI LSIs Specifications subject to change without notice. MH16V6445AWJ -5, -6 HYPER PAGE MODE 1073741824 - BIT 16777216 - WORD BY 64 - BIT DYNAMIC RAM DESCRIPTION PIN CONFIGURATION The MH16V6445AWJ is 16777216-word x 64-bit dynamic
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MH16V6445AWJ
16777216-word
64-bit
MIT-DS-0100-0
22/Oct
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M5M467405AJ
Abstract: No abstract text available
Text: n a ry S pee. MITSUBISHI LSIs Specifications subject to change without notice. MH16V725AWJ -5, -6 HYPER PAGE MODE 1207959552 - BIT 16777216 - WORD BY 72 - BIT DYNAMIC RAM DESCRIPTION PIN CONFIGURATION The MH16V725AWJ is 16777216-word x 72-bit dynamic ram module. This consist of eighteen industry standard
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MH16V725AWJ
16777216-word
72-bit
MIT-DS-0123-0
26/Feb
l/qsd/92
2SS6S6Z021-
3Q01AI
M5M467405AJ
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI LSIs ìinary Spee. Specifications subject to change without notice. MH4V7245AWXJ -5, -6 HYPER PAGE MODE 301989888 - BIT 4194304 - WORD BY 72 - BIT DYNAMIC RAM DESCRIPTION The MH4V7245AWXJ is 4194304-word x 72-bit dynamic ram module. This consist of four industry standard 4M x
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MH4V7245AWXJ
4194304-word
72-bit
MIT-DS-0095-0
25/Feb
8886861-OS
3Q01AI
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