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    ULTRAFAST N CHANNEL 600V 20A IGBT Search Results

    ULTRAFAST N CHANNEL 600V 20A IGBT Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    GT30J110SRA Toshiba Electronic Devices & Storage Corporation IGBT, 1100 V, 60 A, Built-in Diodes, TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation
    TPD4164F Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Surface mount type / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4207F Toshiba Electronic Devices & Storage Corporation Intelligent power device 600V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation
    TPD4204F Toshiba Electronic Devices & Storage Corporation Intelligent power device 600V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation
    TPD4164K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation

    ULTRAFAST N CHANNEL 600V 20A IGBT Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    GP19NC60S

    Abstract: JESD97 STGP19NC60S
    Text: STGP19NC60S N-channel 600V - 20A - TO-220 Medium frequency PowerMESH IGBT Features Type VCES STGP19NC60S 600V VCE sat (typ)@150°C IC @100°C < 1.35V 20A • Very low on-voltage drop (VCE(sat) ■ High input impedance (voltage driven) ■ IGBT co-packaged with ultrafast freewheeling


    Original     		STGP19NC60S O-220 GP19NC60S JESD97 STGP19NC60S PDF

    GP19NC60SD

    Abstract: JESD97 STGP19NC60SD
    Text: STGP19NC60SD N-channel 600V - 20A - TO-220 Medium frequency PowerMESH IGBT Features Type VCES STGP19NC60SD 600V VCE sat (typ)@150°C IC @100°C < 1.35V 20A • Very low on-voltage drop (VCE(sat) ■ High input impedance (voltage driven) ■ IGBT co-packaged with ultrafast freewheeling


    Original     		STGP19NC60SD O-220 GP19NC60SD JESD97 STGP19NC60SD PDF

    Untitled

    Abstract: No abstract text available
    Text: IRGS4620DPbF IRGB4620DPbF IRGP4620D -E PbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V C C C G G IC = 20A, TC =100°C G tSC ≥ 5µs, TJ(max) = 175°C C G E VCE(ON) typ. = 1.55V @ IC = 12A n-channel Applications • Appliance Drive


    Original     		IRGS4620DPbF IRGB4620DPbF IRGP4620D IRGP4620DPbF O-247AC O-220AC IRGP4620D-EPbF O-247AD PDF

    IRU1239SC

    Abstract: iru1239 Full-bridge IR2110 Class-D ir2010 PWM IR2112 IRF540 ir21065 full bridge ir2110 h-bridge irfz44n IRVCM10A 600V 300A igbt dc to dc boost converter
    Text: SHENZHEN SHOUHE TECHNOLOGY CO., LTD. TEL: 0755-8380 8450 FAX: 0755-8380 8425 Part Information PartNo Function Line Pkg 100MT160PAPBF Discrete IRCI Module MTP 100MT160PA Discrete IRCI Module MTP 100MT160PBPBF Discrete IRCI Module MTP IRCI Module MTP IRCI Module MTK


    Original     		100MT160PAPBF 100MT160PA 100MT160PBPBF IRU1239SC iru1239 Full-bridge IR2110 Class-D ir2010 PWM IR2112 IRF540 ir21065 full bridge ir2110 h-bridge irfz44n IRVCM10A 600V 300A igbt dc to dc boost converter PDF

    Infineon technology roadmap for mosfet

    Abstract: LFPAK88 Acbel schematic diagram switching power supply BLDC TRW schematic diagram inverter air conditioner schematic diagram for split air conditioner TRIAC 20A 600V inverter schematic ims 1600 triac 4A, 600V, 5mA triac 0,8A, 600V, 5mA
    Text: NXP PowerMOS, BIPOLAR and Motor Control Smaller, Faster, Cooler June 05, 2014 Nicolas Rescanieres Field Application Engineer South of France NXP PowerMOS 1 Agenda MosFET in automotive and industrial Bipolar Motor Control Agenda MosFET in automotive and industrial


    Original     		KMZ60 KMA210 KMA215 Infineon technology roadmap for mosfet LFPAK88 Acbel schematic diagram switching power supply BLDC TRW schematic diagram inverter air conditioner schematic diagram for split air conditioner TRIAC 20A 600V inverter schematic ims 1600 triac 4A, 600V, 5mA triac 0,8A, 600V, 5mA PDF

    igbt inverter welder schematic

    Abstract: SCHEMATIC 1000w smps 48V SMPS 1000w 24V 10A SMPS smps 500w half bridge smps 1000W full bridge mosfet smps 48V 100w SMPS inverter welder schematic half bridge converter 2kw
    Text: March 2002 Analog Discrete Interface & Logic Optoelectronics Discrete Solutions for Power Supplies Across the board. Around the world. Discrete Solutions for Power Supplies Fairchild Semiconductor is one of the world’s leading providers of Discrete Power Products, including Metal Oxide Semiconductor Field


    Original     		PDF

    15A POWER TRANSISTOR FOR SMPS

    Abstract: list of n channel power mosfet FQPF*10n20c FAN7601 detailed vfd circuit diagram for motor FAN7601 application data list of P channel power mosfet 80a charger transformer dual Phototransistor mouse FQPF10N20C
    Text: New LEDs and LED Driver IC Solutions 1 • Comprehensive New Product List • New Product Highlights FAN7031, FAN7023, FAN7005 - Audio Amplifiers FIN7216-01 - Quad PHY FAN7556 - Voltage Mode PWM Controller FAN7601 - Current Mode PWM Controller FSA3357 - SP3T Analog Switch


    Original     		FAN7031, FAN7023, FAN7005 FIN7216-01 FAN7556 FAN7601 FSA3357 QVE00033 Power247TM, 15A POWER TRANSISTOR FOR SMPS list of n channel power mosfet FQPF*10n20c detailed vfd circuit diagram for motor FAN7601 application data list of P channel power mosfet 80a charger transformer dual Phototransistor mouse FQPF10N20C PDF

    BZX85C12V

    Abstract: TOSHIBA 2N3055 bta41-600b application BTA41-600B firing circuit TAB 429 H toshiba BZX85C20V SCR tyn612 pin configuration picaxe TYN612 specification 2SA1085E
    Text: SEMICONDUCTORS DISCRETE DEVICES Cathode Anode DO-15 DO-201AD 6.8 x 3.5mm 9.5 x 5.3mm Anode Cathode TO-220AC Fast recovery diodes page 427 Schottky power diodes page 428 Isolated tab triacs page 430 Anode 1 Gate Anode 2 Bridge rectifiers Current regulating diodes


    Original     		DO-15 DO-201AD O-220AC T0202-3 STGP3NB60HD* STGP7NB60HD* STGP3NB60HD STGP7NB60HD BZX85C12V TOSHIBA 2N3055 bta41-600b application BTA41-600B firing circuit TAB 429 H toshiba BZX85C20V SCR tyn612 pin configuration picaxe TYN612 specification 2SA1085E PDF

    Common rail piezo injector driver

    Abstract: Common rail injector driver COMMON RAIL SOLENOID DIRECT INJECTION piezo injector driver Piezo Direct Injection SCHEMATIC IGNITION WITH IGBTS FAN7085 DRIVER injector Common rail FQD3P50TM FQD12N201
    Text: AUTOMOTIVE SOLUTIONS TO MAXIMIZE FUEL EFFICIENCY & REDUCE CO2 EMISSIONS Saving our world, 1mW at a time www.fairchildsemi.com INTRODUCTION Fairchild Semiconductor Automotive Solutions Whether specifying an intelligent ignition control for high performance engine management systems or


    Original     		PDF

    sumida 94V-0

    Abstract: inverter using irfz44n MOSFET IRF9430 IRF7414 irfp460 dc welding circuit diagram IRFP264 inverter circuits IRFP450 inverter Three phase inverter using irfp450 mosfet Diagram Sumida ul94v-0 inverter IRF 544 N MOSFET
    Text: International Rectifier The IGBT SIP & HEXPak Navigator Effective 8 September, EXISTING Products NEW Products UPCOMING Products POTENTIAL Products released to production in last 6-9 months to be released within next 3-4 months no current plans. see bus.mgmt.


    Original     		IRFK2D054 IRFK2F054 CPV362M4U CPV363M4U CPV364M4U CPV362M4F CPV363M4F CPV364M4F CPV362M4K CPV363M4K sumida 94V-0 inverter using irfz44n MOSFET IRF9430 IRF7414 irfp460 dc welding circuit diagram IRFP264 inverter circuits IRFP450 inverter Three phase inverter using irfp450 mosfet Diagram Sumida ul94v-0 inverter IRF 544 N MOSFET PDF

    65e9 transistor

    Abstract: transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note
    Text: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 | | ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12


    Original     		1-888-INTERSIL MS-012AA MO-153AA RF1K49090 RF1K49093 RF1K49092 ITF87056DQT ITF87072DK8T ITF87008DQT RF1K49223 65e9 transistor transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note PDF

    AN885 - "Brushless DC Motor Fundamentals"

    Abstract: S 170 MOSFET TRANSISTOR AN898 600v 20a IGBT PIC stepper motor interfacing HEXFET Power MOSFET designer manual static characteristics of mosfet and igbt 2A mosfet igbt driver stage fuji igbt IGBT Modules Explanation of Technical Information DC MOTOR SPEED CONTROL USING IGBT
    Text: M AN898 Determining MOSFET Driver Needs for Motor Drive Applications Author: Jamie Dunn Microchip Technology Inc. INTRODUCTION Electronic motor control for various types of motors represents one of the main applications for MOSFET drivers today. This application note discusses some of


    Original     		AN898 DK-2750 D-85737 NL-5152 AN885 - "Brushless DC Motor Fundamentals" S 170 MOSFET TRANSISTOR AN898 600v 20a IGBT PIC stepper motor interfacing HEXFET Power MOSFET designer manual static characteristics of mosfet and igbt 2A mosfet igbt driver stage fuji igbt IGBT Modules Explanation of Technical Information DC MOTOR SPEED CONTROL USING IGBT PDF

    IRF9460

    Abstract: ir2110 spice IR2110 IGBT DRIVER irfp460 ir2110 INT-983 IRGP50S ir2110 with calculations for 3 phase inverter IR2121 irfp450 mosfet IRCPC50F
    Text: Application Note AN-990 Application Characterization of IGBTs Table of Contents Page I. Gate Drive Requirements . 1 I. A Impact of the impedance of the gate drive circuit on switching losses. 1


    Original     		AN-990 IRF9460 ir2110 spice IR2110 IGBT DRIVER irfp460 ir2110 INT-983 IRGP50S ir2110 with calculations for 3 phase inverter IR2121 irfp450 mosfet IRCPC50F PDF

    1N2074A

    Abstract: h bridge inverter using ir2112 mosfet driver power inverter schematic diagram ir2110 ic 555 timer gate drive scr inverter schematic PWM IR2112 IRF540 LN4148 full bridge ir2110 h bridge irf740 inverter h bridge ir2110 555 igbt driver IR2117
    Text: APPLICATION NOTE AN978 International Rectifier • 233 Kansas Street El Segundo CA 90245 USA HV Floating MOS-Gate Driver ICs HEXFET is a trademark of International Rectifier Topics Covered: Gate drive requirements of high side devices Block diagram of a typical MGD


    Original     		AN978 116ns AN-967 AN-961 AN-959 1N2074A h bridge inverter using ir2112 mosfet driver power inverter schematic diagram ir2110 ic 555 timer gate drive scr inverter schematic PWM IR2112 IRF540 LN4148 full bridge ir2110 h bridge irf740 inverter h bridge ir2110 555 igbt driver IR2117 PDF

    LN4148

    Abstract: 1N2074A PWM IR2112 IRF540 h bridge ir2110 555 igbt driver IR2117 IR2119 power inverter schematic diagram ir2110 IR2110 h bridge inverter ac control using ir2110 IR2110 INVERTER SCHEMATIC
    Text: APPLICATION NOTE AN978 International Rectifier • 233 Kansas Street El Segundo CA 90245 USA HV Floating MOS-Gate Driver ICs HEXFET is a trademark of International Rectifier Topics Covered: Gate drive requirements of high side devices Block diagram of a typical MGD


    Original     		AN978 116ns AN-967 AN-961 AN-959 LN4148 1N2074A PWM IR2112 IRF540 h bridge ir2110 555 igbt driver IR2117 IR2119 power inverter schematic diagram ir2110 IR2110 h bridge inverter ac control using ir2110 IR2110 INVERTER SCHEMATIC PDF

    DC motor speed control using 555 timer and mosfet

    Abstract: ac control using ir2110 and mosfet IR2110 INVERTER SCHEMATIC 1n2074a driver circuit for MOSFET IR2110 PWM IR2110 for CIRCUIT inverter IR2110 INVERTER DIAGRAM AN978 1N2074 IR2110 buck boost converter
    Text: APPLICATION NOTE AN978 International Rectifier • 233 Kansas Street El Segundo CA 90245 USA HV Floating MOS-Gate Driver ICs HEXFET is a trademark of International Rectifier Topics Covered: Gate drive requirements of high side devices Block diagram of a typical MGD


    Original     		AN978 116ns AN-967 AN-961 AN-959 DC motor speed control using 555 timer and mosfet ac control using ir2110 and mosfet IR2110 INVERTER SCHEMATIC 1n2074a driver circuit for MOSFET IR2110 PWM IR2110 for CIRCUIT inverter IR2110 INVERTER DIAGRAM AN978 1N2074 IR2110 buck boost converter PDF

    1n2074a

    Abstract: DT98-2a Bootstrap Component Selection for Cont power inverter schematic diagram ir2110 AN978a Inverter IR2110 full bridge ir2110 PWM IR2112 IRF540 ac control using ir2110 and mosfet h bridge irf740 h bridge ir2110
    Text: APPLICATION NOTE AN978-b International Rectifier • 233 Kansas Street El Segundo CA 90245 USA HV Floating MOS-Gate Driver ICs HEXFET is a trademark of International Rectifier Topics Covered: Gate drive requirements of high side devices Block diagram of a typical MGD


    Original     		AN978-b 116ns AN-967 AN-961 AN-959 1n2074a DT98-2a Bootstrap Component Selection for Cont power inverter schematic diagram ir2110 AN978a Inverter IR2110 full bridge ir2110 PWM IR2112 IRF540 ac control using ir2110 and mosfet h bridge irf740 h bridge ir2110 PDF

    TRANSISTOR BIPOLAR 400V 20A

    Abstract: igbt 1000v 10A P-Channel IGBT igbt 500V 15A igbt 40A 600V P-CHANNEL 400V 15A N channel 600v 20a IGBT igbt 400V 40A igbt 400V 20A 400V P-Channel IGBT
    Text: — MCT/IGBT/DIODES 3 INSULATED GATE BIPOLAR TRANSISTORS PAGE SELECTION G U ID E .


    OCR Scan     		HGTD6N40E1, HGTD6N40E1S, HGTD6N50E1, HGTD6N50E1S HGTP6N40E1D, HGTP6N50E1D HGTP10N40C1, HGTH12N40C1, HGTP10N40C1D, HGTP10N40E1D, TRANSISTOR BIPOLAR 400V 20A igbt 1000v 10A P-Channel IGBT igbt 500V 15A igbt 40A 600V P-CHANNEL 400V 15A N channel 600v 20a IGBT igbt 400V 40A igbt 400V 20A 400V P-Channel IGBT PDF

    ultrafast n channel 600v 20a IGBT

    Abstract: No abstract text available
    Text: International IMlRecbfier provisional P D -9.1284 IPM2060 IGBT INTELLIGENT MODULE Features • • • • • • • • • 3 phase IGBT bridge with drive and protection circuit. 3 kW output power at 300VDC, 8kHz, Tc = 85°C "UltraFast" IGBT and "HEXFRED"™ Ultrafast, Soft Recovery Diodes,


    OCR Scan     		300VDC, 25kHz IPM2060 IPM2060 HEXFRED2060 10-Timing 4flS5452 0022S2M ultrafast n channel 600v 20a IGBT PDF

    Untitled

    Abstract: No abstract text available
    Text: International I Q R Rectifier PD-9.1424 IRGCC50KE TARGET IRGCC50KE IGBT Die in Wafer Form ' 600 V Size 5 Ultra-Fast Speed 5" Wafer Electrical Characteristics Wafer Form Description Guaranteed (Min/Max) VcE (on) Collector-to-Emltter Saturation Voltage 3.0V Max.


    OCR Scan     		P-944 IRGCC50KE IRGCC50KE 250pA, PDF

    Untitled

    Abstract: No abstract text available
    Text: International IOR Rectifier PD-9.1427 IRGCC40KE TARGET IRGCC40KE IGBT Die in Wafer Form 600 V Size 4 Ultra-Fast Speed 5 " Wafer Electrical Characteristics Wafer Form Param eter Description G uaranteed (Min/Max) VcE (on) Collector-to-Emltter Saturation Voltage


    OCR Scan     		P-947 IRGCC40KE IRGCC40KE 250pA, 250pA PDF

    Untitled

    Abstract: No abstract text available
    Text: International IQR Rectifier pd-s.uss IRGCH50KE TARGET IRGCH50KE IGBT Die in Wafer Form 1200 V Size 5 Ultra-Fast Speed 5" Wafer Electrical Characteristics Wafer Form D escription Guaranteed (Min/Max) VcE(on) Collector-to-Emitter Saturation Voltage 3.8V Max.


    OCR Scan     		IRGCH50KE IRGCH50KE 250pA, 250pA PDF

    pm20cma060

    Abstract: 3 phase rectifier circuit diagram igbt ultrafast n channel 600v 20a IGBT h 9128 Alcohol detection with vehicle controlling pm20c P channel 600v 20a IGBT resistor sms diode B5C 3 phase UPS block WITH CIRCUIT diagram
    Text: International fegjRectifier PD 9128 provisional_ PM20CMA060 IGBT INTELLIGENT MODULE Features • 3 phase IGBT bridge with drive and protection circuit. • 3 kW output power at 300VDC, 8kHz, Tc = 85°C • "UltraFast" IGBT and “HEXFRED”™ Ultratast, Soft Recovery


    OCR Scan     		PM20CMA060 300VDC, 25kHz PM20CMA060 10-Timing S5M52 3 phase rectifier circuit diagram igbt ultrafast n channel 600v 20a IGBT h 9128 Alcohol detection with vehicle controlling pm20c P channel 600v 20a IGBT resistor sms diode B5C 3 phase UPS block WITH CIRCUIT diagram PDF

    Untitled

    Abstract: No abstract text available
    Text: PD-9.1419 International IQ R Rectifier IRGCH70KE TARGET IRGCH70KE IGBT Die in Wafer Form 1200 V Size 7 Ultra-Fast Speed 5" Wafer Electrical Characteristics Wafer Form Description G uaranteed (Min/Max) VcE(on) Param eter Collector-to-Emitter Saturation Voltage


    OCR Scan     		IRGCH70KE IRGCH70KE 250pA, 250pA PDF