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NEC Electronics Group UPA826TC-T1-A
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Quest Components	UPA826TC-T1-A		3,520			1 $8.4 10 $8.4 100 $8.4 1000 $4.2 10000 $4.2	Buy Now
NEC Electronics Group UPA826TC-T1
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Quest Components	UPA826TC-T1		3,480			1 $3.78 10 $3.78 100 $3.78 1000 $1.89 10000 $1.89	Buy Now

UPA82 Datasheets (42)

Part	Manufacturer	Description	Datasheet Type	PDF
uPA821	NEC	Semiconductor Selection Guide	Original	PDF
UPA821	NEC	NPN SILICON EPITAXIAL TWIN TRANSISTOR WITH BUILT-IN 2 x 2SC5006 FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD	Original	PDF
UPA821TC	NEC	NPN SILICON EPITAXIAL TWIN TRANSISTOR	Original	PDF
UPA821TC	NEC	NPN SILICON EPITAXIAL TWIN TRANSISTOR WITH BUILT-IN 2 x 2SC5006 FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD	Original	PDF
UPA821TC-T1	NEC	NPN SILICON EPITAXIAL TWIN TRANSISTOR WITH BUILT-IN 2 x 2SC5006 FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD	Original	PDF
uPA821TC-T1	NEC	NPN SILICON RF TWIN TRANSISTOR	Original	PDF
UPA821TF	NEC	Dual NPN SILICON HIGH FREQUENCY TRANSISTOR	Original	PDF
uPA821TF	NEC	HIGH-FREQUENCY LOW-NOISE AMPLIFIER NPN SILICON EPITAXIAL TWIN TRANSISTOR (WITH BUILT-IN 6-PIN 2 x 2S	Original	PDF
UPA821TF-T1	NEC	NPN silicon epitaxial twin transistor.	Original	PDF
uPA821TF-T1	NEC	HIGH-FREQUENCY LOW-NOISE AMPLIFIER NPN SILICON EPITAXIAL TWIN TRANSISTOR (WITH BUILT-IN 6-PIN 2 x 2S	Original	PDF
UPA822TF	NEC	NPN SILICON HIGH FREQUENCY TRANSISTOR	Original	PDF
uPA826	NEC	Semiconductor Selection Guide	Original	PDF
UPA826TC	NEC	NPN SILICON EPITAXIAL TWIN TRANSISTOR WITH BUILT-IN 2 x 2SC5010 FLAT-LEAD 6-PIN THIN -TYPE ULTRA SUPER MINIMOLD	Original	PDF
UPA826TC	NEC	NPN SILICON EPITAXIAL TWIN TRANSISTOR	Original	PDF

uPA826TC	NEC	NPN SILICON EPITAXIAL TRANSISTOR (WITH 2 ELEMENTS) IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMO	Original	PDF
UPA826TC-T1	NEC	NPN SILICON EPITAXIAL TWIN TRANSISTOR WITH BUILT-IN 2 x 2SC5010 FLAT-LEAD 6-PIN THIN -TYPE ULTRA SUPER MINIMOLD	Original	PDF
uPA826TC-T1	NEC	NPN SILICON EPITAXIAL TRANSISTOR (WITH 2 ELEMENTS) IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMO	Original	PDF
UPA826TF	NEC	NPN SILICON EPITAXIAL TWIN TRANSISTOR	Original	PDF
uPA826TF	NEC	HIGH-FREQUENCY LOW-NOISE AMPLIFIER NPN SILICON EPITAXIAL TWIN TRANSISTOR (WITH BUILT-IN 6-PIN 2 x 2S	Original	PDF
UPA826TF-T1	NEC	NPN silicon epitaxial twin transistor.	Original	PDF

UPA82 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
NE681 Abstract: S21E UPA822TF Text: NPN SILICON HIGH FREQUENCY TRANSISTOR UPA822TF OUTLINE DIMENSIONS Units in mm FEATURES • SMALL PACKAGE OUTLINE: SOT-363 package measures just 2.0 mm x 1.25 mm • LOW HEIGHT PROFILE: Just 0.60 mm high • HIGH COLLECTOR CURRENT: IC MAX = 65 mA PACKAGE OUTLINE TS06	Original	UPA822TF OT-363 UPA822TF NE681 UPA822TF-T1, 24-Hour S21E	PDF
UPA826TC-T1 Abstract: BF109 NE685 S21E UPA826TC vaf meter Text: PRELIMINARY DATA SHEET NPN SILICON EPITAXIAL TWIN TRANSISTOR UPA826TC FEATURES DESCRIPTION • SMALL PACKAGE STYLE: 1.5 mm x 1.1 mm, 33% smaller than conventional SOT-363 package • LOW HEIGHT PROFILE: Just 0.55 mm high The UPA826TC contains two NE685 NPN high frequency	Original	UPA826TC OT-363 UPA826TC NE685 UPA826TC-T1 BF109 S21E vaf meter	PDF
IC 7448 Abstract: pin configuration of 7496 IC UPA827TF pin configuration ic 7448 pin configuration NPN transistor 9013 npn NE686 S21E UPA827TF-T1-A 8 pin ic 3842 NEC 14324 Text: PRELIMINARY DATA SHEET NPN SILICON EPITAXIAL TWIN TRANSISTOR FEATURES • UPA827TF OUTLINE DIMENSIONS Units in mm HIGH GAIN WITH LOW OPERATING CURRENT: \|S21E\|2 = 9 dB TYP at f = 2 GHz, VCE = 2 V, lc = 7 mA Package Outline TS06 (Top View) 2.1 ± 0.1 \|S21E\|2 = 8.5 dB TYP at f = 2 GHz, VCE = 1 V, lc = 5 mA	Original	UPA827TF NE686 UPA827TF UPA827TF-T1-A IC 7448 pin configuration of 7496 IC pin configuration ic 7448 pin configuration NPN transistor 9013 npn S21E UPA827TF-T1-A 8 pin ic 3842 NEC 14324	PDF
pin IC 7479 Abstract: NE685 S21E UPA826TF UPA826TF-T1 pt 6964 Text: PRELIMINARY DATA SHEET NPN SILICON EPITAXIAL TWIN TRANSISTOR FEATURES • • • • UPA826TF OUTLINE DIMENSIONS Units in mm LOW NOISE AND HIGH GAIN OPERABLE AT LOW VOLTAGE SMALL FEEDBACK CAPACITANCE: Cre = 0.4 pF TYP SMALL PACKAGE STYLE: 2 NE685 die in a 2 mm x 1.25 mm x 0.6 mm package	Original	UPA826TF NE685 UPA826TF UPA826TF-T1 24-Hour pin IC 7479 S21E UPA826TF-T1 pt 6964	PDF
NE688 Abstract: S21E UPA829TF UPA829TF-T1 Text: NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES UPA829TF OUTLINE DIMENSIONS Units in mm • SMALL PACKAGE OUTLINE: SOT-363 package measures just 2.0 mm x 1.25 mm • LOW HEIGHT PROFILE: Just 0.60 mm high • HIGH COLLECTOR CURRENT: IC MAX = 100 mA PACKAGE OUTLINE TS06	Original	UPA829TF OT-363 UPA829TF NE688 UPA829TF-T1, 24-Hour S21E UPA829TF-T1	PDF
Untitled Abstract: No abstract text available Text: PRELIMINARY DATA SHEET NPN SILICON EPITAXIAL TWIN TRANSISTOR UPA826TC FEATURES DESCRIPTION • SMALL PACKAGE STYLE: 1.5 mm x 1.1 mm, 33% smaller than conventional SOT-363 package • LOW HEIGHT PROFILE: Just 0.55 mm high The UPA826TC contains two NE685 NPN high frequency	Original	OT-363 UPA826TC UPA826TC NE685 UPA826TC-T1, 24-Hour	PDF
capacitance meter Abstract: "capacitance meter" NE856 S21E UPA821TC UPA821TC-T1 t2 high frequency transistor Text: PRELIMINARY DATA SHEET NPN SILICON EPITAXIAL TWIN TRANSISTOR UPA821TC FEATURES DESCRIPTION • SMALL PACKAGE STYLE: 1.5 mm x 1.1 mm, 33% smaller than conventional SOT-363 package • LOW HEIGHT PROFILE: Just 0.55 mm high The UPA821TC contains two NE856 NPN high frequency	Original	UPA821TC OT-363 UPA821TC NE856 UPA821TC-T1, 24-Hour capacitance meter "capacitance meter" S21E UPA821TC-T1 t2 high frequency transistor	PDF
ic pe 5571 Abstract: pe 5571 ic 7483 pin configuration 7402 ic configuration ic 3994 ic 4017 pin configuration on 5295 transistor IC 7449 ic LC 8720 S21E Text: PRELIMINARY DATA SHEET NPN SILICON EPITAXIAL TWIN TRANSISTOR FEATURES UPA821TF OUTLINE DIMENSIONS Units in mm LOW NOISE: NF = 1.2 dB TYP at f = 1 GHz, VCE = 3 V, lc = 7 mA • HIGH GAIN: \|S21E\|2 = 9.0 dB TYP at f = 1 GHz, VCE = 3 V, lc = 7 mA • SMALL PACKAGE STYLE:	Original	UPA821TF NE856 UPA821TF UPA821TF-T1 24-Hour ic pe 5571 pe 5571 ic 7483 pin configuration 7402 ic configuration ic 3994 ic 4017 pin configuration on 5295 transistor IC 7449 ic LC 8720 S21E	PDF
ic 7809 Abstract: OF IC 7809 UPA828TF-T1 NE687 S21E UPA828TF 3699 npn electrical characteristics IC 7809 Text: PRELIMINARY DATA SHEET NPN SILICON EPITAXIAL TWIN TRANSISTOR FEATURES OUTLINE DIMENSIONS Unit in mm • LOW NOISE: NF = 1.3 dB TYP at f = 2 GHz, VCE = 2 V, lc = 3 mA • HIGH GAIN: \|S21E\|2 • UPA828TF Package Outline TS06 (Top View) 2.1 ± 0.1 1.25 ± 0.1	Original	UPA828TF UPA828TF UPA828TF-T1 24-Hour ic 7809 OF IC 7809 UPA828TF-T1 NE687 S21E 3699 npn electrical characteristics IC 7809	PDF
Untitled Abstract: No abstract text available Text: NONLINEAR MODEL BJT NONLINEAR MODEL PARAMETERS 1 Parameters Q1 & Q2 Parameters Q1 & Q2 IS BF 7e-16 MJC 0.34 109 XCJC NF 1 CJS VAF 15 VJS 0.75 IKF 0.19 MJS ISE 7.9e-13 FC 0.5 3e-12 NE 2.19 TF BR 1 XTF 5.2 NR 1.08 VTF 4.58 0.01 VAR 12.4 ITF IKR Infinity PTF	Original	UPA826TC 7e-16 9e-13 4e-12 18e-12 3e-12	PDF
150J10 Abstract: mje 13006 Text: NPN SILICON RF TWIN TRANSISTOR FEATURES OUTLINE DIMENSIONS • LOW VOLTAGE, LOW CURRENT OPERATION • SMALL PACKAGE OUTLINE: 1.0±0.05 0.8 +0.07 -0.05 LOW HEIGHT PROFILE: E1 C2 Q1 6 B1 5 2 E2 3 Q2 4 B2 PIN CONNECTIONS 1. Collector Q1 2. Emitter (Q1) 3. Collector (Q2)	Original	UPA862TD UPA862TD NE851 NE685 150J10 mje 13006	PDF
KF 517 Abstract: AN1026 NE685 S21E UPA862TD UPA862TD-T3-A Text: NEC's NPN SILICON RF TWIN TRANSISTOR FEATURES OUTLINE DIMENSIONS • LOW VOLTAGE, LOW CURRENT OPERATION • SMALL PACKAGE OUTLINE: 1.0±0.05 0.8 +0.07 -0.05 LOW HEIGHT PROFILE: E1 C2 Q1 6 B1 5 2 E2 3 Q2 4 B2 PIN CONNECTIONS 1. Collector Q1 2. Emitter (Q1)	Original	UPA862TD NE851 NE685 KF 517 AN1026 S21E UPA862TD-T3-A	PDF
FET marking code g5d Abstract: PG2179TB marking code C3E SOT-89 marking code C1E mmic marking code C1G mmic 2SC3357/NE85634 PG2163T5N sot-23 g6g PC8230TU marking code C1H mmic Text: RF AND MICROWAVE DEVICES PRODUCT LINEUP www.renesas.com 2010.07 This document covers “Silicon Microwave Transistors”, “Silicon Microwave Monolithic ICs” and “Microwave GaAs Devices”. Caution GaAs Products This product uses gallium arsenide GaAs .	Original	R09CL0001EJ0100 PX10727EJ02V0PF) FET marking code g5d PG2179TB marking code C3E SOT-89 marking code C1E mmic marking code C1G mmic 2SC3357/NE85634 PG2163T5N sot-23 g6g PC8230TU marking code C1H mmic	PDF
nec mosfet marked v75 Abstract: NEC Ga FET marking code T79 FET marking code g5d marking code C1G mmic LGA 1155 PIN diagram PB1507 marking code C1E mmic marking code C1H mmic PC8230TU MMIC SOT 363 marking CODE 77 Text: お客様各位カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジが合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社	Original	G0706 PX10727EJ02V0PF nec mosfet marked v75 NEC Ga FET marking code T79 FET marking code g5d marking code C1G mmic LGA 1155 PIN diagram PB1507 marking code C1E mmic marking code C1H mmic PC8230TU MMIC SOT 363 marking CODE 77	PDF

BA 7312 Abstract: ba 3822 ls NEC IC 5020 098 BA 6688 L em 6695 6 pin ic 6628 j 6815 transistor BA 5977 ha 13483 fr 3709 Text: PRELIMINARY DATA SHEET NEC NPN SILICON EPITAXIAL TWIN TRANSISTOR FEATURES UPA828TF OUTLINE DIMENSIONS Unit in mm LOW NOISE: P ackage O u tlin e TS06 (T o p View) NF = 1.3 dB TYP at f = 2 GHz, Vce = 2 V, Ic = 3 m A HIGH GAIN: \|S 21 e \|2 = 8.5 dB TYP at f = 2 GHz, V c e = 2 V, Ic = 20 m A	OCR Scan	UPA828TF NE856 UPA828TF PA828TF PA828TF-T1 24-Hour BA 7312 ba 3822 ls NEC IC 5020 098 BA 6688 L em 6695 6 pin ic 6628 j 6815 transistor BA 5977 ha 13483 fr 3709	PDF
UPA827TF Abstract: k 3531 transistor Text: PRELIMINARY DATA SHEET UPA827TF NPN SILICON EPITAXIAL TWIN TRANSISTOR FEATURES_ • OUTLINE DIMENSIONS Units in mm HIGH GAIN WITH LOW OPERATING CURRENT: Package Outline T S 06 (Top View) \|S 2 ie \|2 = 9 dB T Y P at f = 2 G Hz, V ce = 2 V, Ic = 7 m A	OCR Scan	UPA827TF UPA827TF-T1 24-Hour UPA827TF k 3531 transistor	PDF
transistor c 3531 Abstract: UPA826 Text: PRELIMINARY DATA SHEET UPA826TF NPN SILICON EPITAXIAL TWIN TRANSISTOR OUTLINE DIMENSIONS Units in mm FEATURES LOW NOISE AND HIGH GAIN OPERABLE AT LOW VOLTAGE SMALL FEEDBACK CAPACITANCE: Package Outline TS 06 (Top View) Cre = 0.4 pF TYP SMALL PACKAGE STYLE:	OCR Scan	UPA826TF NE685 UPA826TF PA826TF-T1 24-Hour transistor c 3531 UPA826	PDF
HA 12045 Abstract: IC 7487 TRANSISTOR 023 3010 pin configuration ic 7421 pt 6964 pin IC 7479 k 3531 transistor Text: PRELIMINARY DATA SHEET NEC NPN SILICON EPITAXIAL TWIN TRANSISTOR FEATURES UPA826TF OUTLINE DIMENSIONS Units in mm LOW NOISE AND HIGH GAIN OPERABLE AT LOW VOLTAGE SMALL FEEDBACK CAPACITANCE: Cre = 0.4 pF TYP SMALL PACKAGE STYLE: 2 NE685 die in a 2 mm x 1.25 mm x 0.6 mm package	OCR Scan	UPA826TF NE685 UPA826TF UPA826TF-T1 HA 12045 IC 7487 TRANSISTOR 023 3010 pin configuration ic 7421 pt 6964 pin IC 7479 k 3531 transistor	PDF
nec 16312 Abstract: ha 13463 SN 16880 8377 om 7082 B ic audio amplifier sn 7456 nec 8039 TRANSISTOR C 5706 9522 transistor fr 3709 Text: PRELIMINARY DATA SHEET SILICON TRANSISTOR uPA828TF HIGH-FREQUENCY LOW-NOISE AMPLIFIER NPN SILICON EPITAXIAL TWIN TRANSISTOR WITH BUILT-IN 6-PIN 2 x 2SC5184 THIN-TYPE SMALL MINI MOLD FEATURES PACKAGE DRAWINGS (U nit: mm) Low noise NF = 1 .3 dB TYP. @ V ce = 2 V, Ic = 3 mA, f = 2 GHz	OCR Scan	uPA828TF 2SC5184) /xPA828TF /xPA828TF-T1 nec 16312 ha 13463 SN 16880 8377 om 7082 B ic audio amplifier sn 7456 nec 8039 TRANSISTOR C 5706 9522 transistor fr 3709	PDF
9013 npn transistor pin view Abstract: pin configuration of 7496 IC NEC 14324 ic ma 4810 15251 hfe 4538 UPA827TF pin configuration ic 7448 IC 7432 5942 Text: PRELIMINARY DATA SHEET NEC NPN SILICON EPITAXIAL TWIN TRANSISTOR FEATURES_ • UPA827TF PACKAGE DRAWING Units in mm HIGH GAIN WITH LOW OPERATING CURRENT: Package Outline TS06 (Top View) IS 2 1 EI2 = 9 dB T Y P a t f = 2 G H z, V ce = 2 V, Ic = 7 mA	OCR Scan	UPA827TF UPA827TF-T1 9013 npn transistor pin view pin configuration of 7496 IC NEC 14324 ic ma 4810 15251 hfe 4538 UPA827TF pin configuration ic 7448 IC 7432 5942	PDF
k 3531 transistor Abstract: No abstract text available Text: PRELIMINARY DATA SHEET NEC NPN SILICON EPITAXIAL TWIN TRANSISTOR UPA826TF OUTLINE DIMENSIONS Units FEATURES • • • LOW NOISE AND HIGH GAIN OPERABLE AT LOW VOLTAGE SMALL FEEDBACK CAPACITANCE: • SMALL PACKAGE STYLE: in mm P ackage Outline T S 06 (Top View)	OCR Scan	UPA826TF NE685 UPA826TF for-27 UPA826TF-T1 24-Hour k 3531 transistor	PDF
ha 13483 Abstract: j 6815 transistor transistor 9647 LS 7405 NEC IC 5020 098 Text: PRELIMINARY DATA SHEET NPN SILICON EPITAXIAL TWIN TRANSISTOR FEATURES UPA828TF OUTLINE DIMENSIONS Unit in mm LOW NOISE: Package O utline TS06 (Top View) NF = 1.3 dB TYP at f = 2 GHz, Vce = 2 V, Ic = 3 m A HIGH GAIN: \|S 21 e \|2 = 8.5 dB TYP at f = 2 GHz, V c e = 2 V, Ic = 20 m A	OCR Scan	UPA828TF NE687 UPA828TF UPA828TF-T1 24-Hour ha 13483 j 6815 transistor transistor 9647 LS 7405 NEC IC 5020 098	PDF
Untitled Abstract: No abstract text available Text: PRELIMINARY DATA SHEET NEC NPN SILICON EPITAXIAL TWIN TRANSISTOR FEATURES UPA828TF OUTLINE DIMENSIONS Unit in mm LOW NOISE: NF = 1.3 dB TYP at f = 2 GHz, V ce = 2 V, Ic = 3 mA Package Outline TS 06 (Top View) -* HIGH GAIN: 2.1 ±0.1 i ► r» — 1.25± 0	OCR Scan	NE687 UPA828TF UPA828TF mirror59 UPA828TF-T1	PDF
7082 B ic audio amplifier Abstract: SN 16880 14 pin ic 4027 TRANSISTOR NPN 16085 TRANSISTOR SN 532-3 NEC 4570 IC 7487 transistor lc 7822 n transistor 9527 IC AT 6884 Text: PRELIMINARY DATA SHEET SILICON TRANSISTOR uPA826TF HIGH-FREQUENCY LOW-NOISE AMPLIFIER NPN SILICON EPITAXIAL TWIN TRANSISTOR WITH BUILT-IN 6-PIN 2 x 2SC4959 THIN -TYPE SMALL MINI MOLD PACKAG E DRAWINGS (U nit: mm) FEATURES • Low noise and high gain •	OCR Scan	uPA826TF 2SC4959) /xPA826TF /xPA826TF-T 7082 B ic audio amplifier SN 16880 14 pin ic 4027 TRANSISTOR NPN 16085 TRANSISTOR SN 532-3 NEC 4570 IC 7487 transistor lc 7822 n transistor 9527 IC AT 6884	PDF

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UPA82 Price and Stock

NEC Electronics Group UPA826TC-T1-A

NEC Electronics Group UPA826TC-T1

UPA82 Datasheets (42)

UPA82 Datasheets Context Search

NE681

UPA826TC-T1

IC 7448

pin IC 7479

NE688

Untitled

capacitance meter

ic pe 5571

ic 7809

Untitled

150J10

KF 517

FET marking code g5d

nec mosfet marked v75

BA 7312

UPA827TF

transistor c 3531

HA 12045

nec 16312

9013 npn transistor pin view

k 3531 transistor

ha 13483

Untitled

7082 B ic audio amplifier