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    VCEO 1000V 1A Search Results

    VCEO 1000V 1A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    BCR8FM-20LA#BG0 Renesas Electronics Corporation 1000V - 8A - Triac Medium Power Use Visit Renesas Electronics Corporation
    BCR8FM-20LA#BH0 Renesas Electronics Corporation 1000V - 8A - Triac Medium Power Use Visit Renesas Electronics Corporation
    BCR8FM-20LA#BB0 Renesas Electronics Corporation 1000V - 8A - Triac Medium Power Use, TO-220FP, /Tube Visit Renesas Electronics Corporation
    R7S721000VCBG#AC0 Renesas Electronics Corporation RTOS MPU with 10MB of On-chip RAM Visit Renesas Electronics Corporation
    R7S721000VCFP#AA0 Renesas Electronics Corporation RTOS MPU with 10MB of On-chip RAM Visit Renesas Electronics Corporation

    VCEO 1000V 1A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N5015S

    Abstract: No abstract text available
    Text: 2N5015S Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 1000V 0.41 (0.016)


    Original     		PDF 2N5015S O205AD) 10/20m 1-Aug-02 2N5015S

    2N5015

    Abstract: No abstract text available
    Text: 2N5015 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 1000V 0.41 (0.016)


    Original     		PDF 2N5015 O205AD) 10/25m 1-Aug-02 2N5015

    2N5015X

    Abstract: No abstract text available
    Text: 2N5015X Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 1000V 0.41 (0.016)


    Original     		PDF 2N5015X O205AD) 10/20m 1-Aug-02 2N5015X

    2N5015SX

    Abstract: 1000v, NPN
    Text: 2N5015SX Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 1000V 0.41 (0.016)


    Original     		PDF 2N5015SX O205AD) 10/20m 1-Aug-02 2N5015SX 1000v, NPN

    NPN VCEO 800V

    Abstract: pnp 1000V 2A PNP Vceo 500V 2A 40V NPN NPN VCEo 1000V 1000v, NPN 800V PNP 1000v 5A npn
    Text: Search Results Part number search for devices beginning "2N4939" Datasheets are downloaded as Acrobat PDF files. Semelab Home Bipolar Products PRODUCT Polarity Package VCEO IC cont HFE(min) HFE(max) @ VCE/IC FT PD 2N4939 PNP TO79 40V 0.05A 50 - 10/1m 300MHz


    Original     		PDF 2N4939" 2N4939 2N4939DCSM 10/1m 300MHz 2N5001" 2N5001 2N5001S NPN VCEO 800V pnp 1000V 2A PNP Vceo 500V 2A 40V NPN NPN VCEo 1000V 1000v, NPN 800V PNP 1000v 5A npn

    npn 1000V 15A

    Abstract: NPN Transistor VCEO 1000V diode 1000V 10a MJW16010A transistor 1000V 6A transistor VCE 1000V transistor 1000V vbe 10v, vce 500v NPN Transistor transistor VCEO 1000V
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor MJW16010A DESCRIPTION •Low Collector Saturation Voltage ·Collector-Emitter Sustaining Voltage: VCEO SUS = 500V(Min) ·Wide Area of Safe Operation APPLICATIONS ·Designed for high-voltage, high-speed,power switching in


    Original     		PDF MJW16010A npn 1000V 15A NPN Transistor VCEO 1000V diode 1000V 10a MJW16010A transistor 1000V 6A transistor VCE 1000V transistor 1000V vbe 10v, vce 500v NPN Transistor transistor VCEO 1000V

    2SC5521

    Abstract: 2SC5522 2SC5584 2sc5524 2SC5517 2SC5516 2SC5516 equivalent 2sc5572 2SC5622 2SC5546
    Text: New Horizontal Deflection Transistor Series for TV • Overview Based on accumulated manufacturing technology, these horizontal deflection transistors for TVs offer high performance and compact design. They can also withstand high voltage and maintain low loss. They also have a broad area of safeoperation, despite an absolutely minimal chip area which allows very compact package configuration. These advanced


    Original     		PDF 500V/1600V/1700V/1800V/2000V 2SC5521 2SC5522 2SC5584 2sc5524 2SC5517 2SC5516 2SC5516 equivalent 2sc5572 2SC5622 2SC5546

    NPN Transistor VCEO 1000V

    Abstract: NTE2327 250V transistor npn 2a transistor VCE 1000V
    Text: NTE2327 Silicon NPN Transistor High Voltage, High Speed Switch Description: The NTE2327 is a silicon NPN transistor in a TO126 type package designed for use in converters, inverters, switching regulators, motor control systems and switching applications. Absolute Maximum Ratings:


    Original     		PDF NTE2327 NTE2327 100mA, NPN Transistor VCEO 1000V 250V transistor npn 2a transistor VCE 1000V

    KF5N50

    Abstract: kf12n60 IC 1N4007 diode 400V 4A TO220IS 1N4007 diode bridge MB6S mje13005 DF06 IC kf13n50
    Text: Package Line-up Outline Name ESM USM TSM SOT-23 FLP-8 DPAK FLP-14 Size[㎣] 1.65x0.85 2.0×1.25 2.9×1.6 2.93×1.3 4.85×3.94×1.6 6.6×6.1 8.66×3.94×1.63 Type No. Package MB6S / M VRRM MBS / M IF Type No. KTC3003 HV 0.5A 600V DF06(S) DF(S) 1N4007(G) DO-41


    Original     		PDF OT-23 FLP-14 KTC3003 1N4007 DO-41 MJE13003 MJE13005 O-126 KF5N50 kf12n60 IC 1N4007 diode 400V 4A TO220IS 1N4007 diode bridge MB6S DF06 IC kf13n50

    NPN Transistor VCEO 1000V

    Abstract: transistor VCE 1000V
    Text: NTE2313 Silicon NPN Transistor High Speed Switch Description: The NTE2313 is a high–voltage, high–speed, glass–passivated NPN power transistor in a TO220 type package designed for use in converters, inverters, switching regulators, motor control systems,


    Original     		PDF NTE2313 NTE2313 200mA 500mA, NPN Transistor VCEO 1000V transistor VCE 1000V

    transistor VCE 1000V

    Abstract: NPN Transistor VCEO 1000V 220v 2a transistor NPN Transistor 450v 1A IC 1A datasheet transistor 1000V transistor Ic 1A datasheet NPN SGSF313PI 1000v, NPN SGSF31
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor SGSF313PI DESCRIPTION •Collector-Emitter Sustaining Voltage: VCEO SUS = 450V(Min) ·High Switching Speed ·Low Saturation Voltage APPLICATIONS ·Designed to be used as switch in high efficency off-line


    Original     		PDF SGSF313PI transistor VCE 1000V NPN Transistor VCEO 1000V 220v 2a transistor NPN Transistor 450v 1A IC 1A datasheet transistor 1000V transistor Ic 1A datasheet NPN SGSF313PI 1000v, NPN SGSF31

    NPN Transistor VCEO 1000V

    Abstract: 220v 2a transistor transistor VCE 1000V transistor Ic 1A datasheet NPN 250V transistor npn 2a 1000v, NPN IC 1A datasheet transistor 1000V SGSF313 transistor VCEO 1000V
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor SGSF313 DESCRIPTION •Collector-Emitter Sustaining Voltage: VCEO SUS = 450V(Min) ·High Switching Speed ·Low Saturation Voltage APPLICATIONS ·Designed to be used as switch in high efficency off-line


    Original     		PDF SGSF313 NPN Transistor VCEO 1000V 220v 2a transistor transistor VCE 1000V transistor Ic 1A datasheet NPN 250V transistor npn 2a 1000v, NPN IC 1A datasheet transistor 1000V SGSF313 transistor VCEO 1000V

    Untitled

    Abstract: No abstract text available
    Text: , Dnc. J.£ii£U TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. 2N6754 Silicon NPN Power Transistor DESCRIPTION • Collector-Emitter Sustaining Voltage: VCEO(SUS)= 500(Min.) • High Switching Speed


    Original     		PDF 2N6754

    BUV47A

    Abstract: No abstract text available
    Text: SavantIC Semiconductor Product Specification BUV47A Silicon NPN Power Transistors DESCRIPTION •With TO-3PN package ·High breakdown voltage ·Fast switching time APPLICATIONS ·Suited for 220V switchmode power supply,DC and AC motor control PINNING PIN DESCRIPTION


    Original     		PDF BUV47A BUV47A

    Untitled

    Abstract: No abstract text available
    Text: SEME BUL52A LAB ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR MECHANICAL DATA Dimensions in mm 10.2 4.5 6.3 1.3 Designed for use in electronic ballast applications 18.0 15.1 3.6 Dia. 1 2 3 14.0 1.3 0.85 0.5 2.54 2.54


    Original     		PDF BUL52A 100mA

    Untitled

    Abstract: No abstract text available
    Text: SEME BUL54AFI LAB ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR MECHANICAL DATA Dimensions in mm 6.3 10.2 3.6 Dia. 15.1 Designed for use in electronic ballast applications • • • • • 1 2 3 14.0 1.3 0.85 2.54 2.54


    Original     		PDF BUL54AFI 100mA

    Untitled

    Abstract: No abstract text available
    Text: SEME BUL74A LAB ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR MECHANICAL DATA Dimensions in mm 10.2 4.5 6.3 1.3 3.6 Dia. 18.0 15.1 Designed for use in electronic ballast applications • • • • 1 2 3 14.0 1.3 0.85


    Original     		PDF BUL74A O-220

    BUL52A

    Abstract: semefab NPN Transistor VCEO 1000V
    Text: SEME BUL52A LAB ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR MECHANICAL DATA Dimensions in mm 10.2 4.5 6.3 1.3 Designed for use in electronic ballast applications 18.0 15.1 3.6 Dia. 1 2 3 14.0 1.3 0.85 0.5 2.54 2.54


    Original     		PDF BUL52A 100mA BUL52A semefab NPN Transistor VCEO 1000V

    NPN Transistor VCEO 1000V

    Abstract: BUL54A transistor 500v 0.5a
    Text: SEME BUL54A LAB ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR MECHANICAL DATA Dimensions in mm 10.2 4.5 6.3 1.3 3.6 Dia. 18.0 15.1 Designed for use in electronic ballast applications • • • • • 1 2 3 14.0 1.3


    Original     		PDF BUL54A 100mA NPN Transistor VCEO 1000V BUL54A transistor 500v 0.5a

    NPN Transistor VCEO 1000V

    Abstract: BUL70A transistor 500v 0.5a vbe 10v, vce 500v NPN Transistor
    Text: SEME BUL70A LAB ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR MECHANICAL DATA Dimensions in mm 0.32 0.24 0.10 0.02 16° max. 13° Designed for use in electronic ballast applications 1.70 max. 10° max. 6.7 6.3 3.1 2.9


    Original     		PDF BUL70A OT-223 100mA NPN Transistor VCEO 1000V BUL70A transistor 500v 0.5a vbe 10v, vce 500v NPN Transistor

    BUL54AFI

    Abstract: transistor 500v 0.5a NPN Transistor VCEO 1000V
    Text: SEME BUL54AFI LAB ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR MECHANICAL DATA Dimensions in mm 6.3 10.2 3.6 Dia. 15.1 Designed for use in electronic ballast applications • • • • • 1 2 3 14.0 1.3 0.85 2.54 2.54


    Original     		PDF BUL54AFI 100mA BUL54AFI transistor 500v 0.5a NPN Transistor VCEO 1000V

    Untitled

    Abstract: No abstract text available
    Text: SEME BUL54A LAB ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR MECHANICAL DATA Dimensions in mm 10.2 4.5 6.3 1.3 3.6 Dia. 18.0 15.1 Designed for use in electronic ballast applications • • • • • 1 2 3 14.0 1.3


    Original     		PDF BUL54A 100mA

    ESM40

    Abstract: BUT21A bux86 philips semiconductor ESM6045DV 10a 1000v to220a DIODE 3A 1000V ESM4045DV 1000v 3a diode SOT93 diode 6A 1000v
    Text: N AMER PHILIPS/DISCRETE 55E D • bt353tm Q01b22Q b ■ T~32-0t Power Devices HIGH SPEED, HIGH VOLTAGE DARLINGTONS in order of current rating PACKAGE OUTLINE *C(DC)W SOT-93 BUV90 SOT-93 BUV90F SOT-199 ESM3045AV ËSM3045DV VCE(*at) MAX. a t lc ff MAX a t lc


    OCR Scan     		PDF bk53i31 QCUb220 T-32-OI BU826 OT-93 BU826A BUV90 BUV90F OT-199 ESM40 BUT21A bux86 philips semiconductor ESM6045DV 10a 1000v to220a DIODE 3A 1000V ESM4045DV 1000v 3a diode SOT93 diode 6A 1000v

    buw13a philips semiconductor

    Abstract: BUT22A BUT228 BUP23A SOT93 BUT18 PHILIPS SEMICONDUCTOR mje13008 SOT-93 bus13 philips transistor VCE 1000V
    Text: BSE J> N AUER PHILIPS/DISCRETE • bbS3T31 001bE21 Ö ■ Power Devices HIGH SPEED, HIGH VOLTAGE TRANSISTORS cont. TYPE NO. PACKAGE OUTLINE •cfDOt1) 6A v CE(*at) MAX. at lc/lB t ft y p a tlc (Inductive load) 400V 450V 1.5V at 4A/0.8A 180ns at 4A 850V 1000V


    OCR Scan     		PDF bki53T31 BUT18 BUT18A O-220AB 180ns BUT18F BUT18AF OT-186 BUT12 buw13a philips semiconductor BUT22A BUT228 BUP23A SOT93 BUT18 PHILIPS SEMICONDUCTOR mje13008 SOT-93 bus13 philips transistor VCE 1000V