Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    VQ1001J Search Results

    SF Impression Pixel

    VQ1001J Price and Stock

    Vishay Siliconix VQ1001J

    0.83 A, 30 V, 1 OHM, 4 CHANNEL, N-CHANNEL, SI, POWER, MOSFET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components VQ1001J 4
    • 1 $13.5
    • 10 $12.6
    • 100 $12.6
    • 1000 $12.6
    • 10000 $12.6
    		Buy Now

    Vishay Intertechnologies VQ1001J

    Our Stock
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Velocity Electronics VQ1001J 3
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote

    VQ1001J Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    VQ1001J Vishay Intertechnology Quad N-Channel 30-V (D-S) MOSFET Original PDF
    VQ1001J Unknown FET Data Book Scan PDF
    VQ1001J Unknown Shortform Datasheet & Cross References Data Short Form PDF
    VQ1001J Siliconix MOSPOWER Design Data Book 1983 Scan PDF
    VQ1001J Vishay Siliconix Shortform Siliconix Datasheet Short Form PDF

    VQ1001J Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    VQ1001J

    Abstract: VQ1001P
    Text: VQ1001J/P Vishay Siliconix Quad N-Channel 30-V D-S MOSFETs PRODUCT SUMMARY Part Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 1 @ VGS = 12 V 0.8 to 2.5 0.83 VQ1001P 1 @ VGS = 12 V 0.8 to 2.5 0.53 FEATURES BENEFITS APPLICATIONS D D D D D D D


    Original     		PDF VQ1001J/P VQ1001P VQ1001J S-04279--Rev. 16-Jul-01 VQ1001J VQ1001P

    VQ1001J

    Abstract: VQ1001P
    Text: VQ1001J/P Siliconix NĆChannel EnhancementĆMode MOS Transistors Product Summary Part Number V BR DSS Min (V) VQ1001J 30 VQ1001P rDS(on) Max (W) VGS(th) (V) ID (A) 1 @ VGS = 12 V 0.8 to 2.5 0.83 1 @ VGS = 12 V 0.8 to 2.5 0.53 Features Benefits Applications


    Original     		PDF VQ1001J/P VQ1001J VQ1001P P-37655--Rev. VQ1001J VQ1001P

    VQ1001J

    Abstract: VQ1001P
    Text: VQ1001J/P N-Channel Enhancement-Mode MOSFET Transistors Product Summary Part Number V BR DSS Min (V) VQ1001J 30 VQ1001P rDS(on) Max (W) VGS(th) (V) ID (A) 1 @ VGS = 12 V 0.8 to 2.5 0.83 1 @ VGS = 12 V 0.8 to 2.5 0.53 Features Benefits Applications D D D D


    Original     		PDF VQ1001J/P VQ1001J VQ1001P S-52426--Rev. 14-Apr-97 VQ1001J VQ1001P

    Untitled

    Abstract: No abstract text available
    Text: VQ1001J/P Vishay Siliconix Quad N-Channel 30-V D-S MOSFETs PRODUCT SUMMARY Part Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 1 @ VGS = 12 V 0.8 to 2.5 0.83 VQ1001P 1 @ VGS = 12 V 0.8 to 2.5 0.53 FEATURES BENEFITS APPLICATIONS D D D D D D D


    Original     		PDF VQ1001J/P VQ1001J VQ1001P 08-Apr-05

    VQ1001J

    Abstract: VQ1001P
    Text: VQ1001J/P N-Channel Enhancement-Mode MOSFET Transistors Product Summary Part Number V BR DSS Min (V) VQ1001J 30 VQ1001P rDS(on) Max (W) VGS(th) (V) ID (A) 1 @ VGS = 12 V 0.8 to 2.5 0.83 1 @ VGS = 12 V 0.8 to 2.5 0.53 Features Benefits Applications D D D D


    Original     		PDF VQ1001J/P VQ1001J VQ1001P S-52426--Rev. 14-Apr-97 VQ1001J VQ1001P

    VQ1001J

    Abstract: VQ1001P
    Text: VQ1001J/P Vishay Siliconix Quad N-Channel 30-V D-S MOSFETs PRODUCT SUMMARY Part Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 1 @ VGS = 12 V 0.8 to 2.5 0.83 VQ1001P 1 @ VGS = 12 V 0.8 to 2.5 0.53 FEATURES BENEFITS APPLICATIONS D D D D D D D


    Original     		PDF VQ1001J/P VQ1001P VQ1001J 18-Jul-08 VQ1001J VQ1001P

    TCA780

    Abstract: TFK U 111 B TFK U 4614 B TFK S 186 P TFK U 217 B TFK BP w 41 n TFK BPW 41 N Tfk 880 TFK 148 TDSR 5150 G
    Text: Industry Part Number 1N3245 1N3611GP 1N3612GP 1N3613GP 1N3614GP 1N3725 1N3957GP 1N4001GP 1N4002GP 1N4003GP 1N4004GP 1N4005GP 1N4006GP 1N4007GP 1N4245GP 1N4246GP 1N4247GP 1N4248GP 1N4249GP 1N4678.1N4717 1N4728A.1N4761A 1N4933GP 1N4934GP 1N4935GP 1N4936GP


    Original     		PDF 1N3245 1N3611GP 1N3612GP 1N3613GP 1N3614GP 1N3725 1N3957GP 1N4001GP 1N4002GP 1N4003GP TCA780 TFK U 111 B TFK U 4614 B TFK S 186 P TFK U 217 B TFK BP w 41 n TFK BPW 41 N Tfk 880 TFK 148 TDSR 5150 G

    mosfet cross reference

    Abstract: pj 929 diode pj 1229 diode BSS250 VN0109N5 pj 66 diode pj 929 BSS295 "direct replacement" BSS295 "cross reference" pj 69 diode
    Text: Selector Guides Selector Guides MOSFETs The Supertex enhancement-mode and depletion-mode MOSFET families utilize both vertical and lateral double diffused MOS processes. They feature low parasitic capacitances with interdigitated structures for high-frequency operation. Their low gate threshold voltage is


    Original     		PDF T0-92 options4206A ZVN4206C ZVN4206E ZVN4306A TN2106K1 VN2210N3 TN0606N3 TN0606N6 mosfet cross reference pj 929 diode pj 1229 diode BSS250 VN0109N5 pj 66 diode pj 929 BSS295 "direct replacement" BSS295 "cross reference" pj 69 diode

    VN0300M

    Abstract: VN0300D VQ7254J VQ7254P 25XX VP1001P VQ1001J VQ3001J VQ3001P VNMH03
    Text: Pulse width 80^s—300^s, Duty cycle 1%, Tc=25°C Part Numbers: VN0300D, VN0300M, VP1001P, VQ1001J, Segments 1 and 3: VQ3001P, VQ3001J, VQ7254P, VQ7254J Leakage Currents Ohmic Region T c — CASE TEMPERATURE (°C) ON Resistance Characteristics Temperature Effects on rps(on)


    OCR Scan     		PDF VNMH03 80pisâ 300pis, VN0300D, VN0300M, VP1001P, VQ1001J, VQ3001P, VQ3001J, VQ7254P, VN0300M VN0300D VQ7254J VQ7254P 25XX VP1001P VQ1001J VQ3001J VQ3001P VNMH03

    VQ1001

    Abstract: No abstract text available
    Text: VQ1001 SERIES N-Channel Enhancement-Mode _MOS Transistor Arrays 14-PIN DIP SIDEBRAZE PRODUCT SUMMARY PART NUMBER V BR DSS VQ1001J 30 VQ1001P 30 TOP VIEW Dual-ln-Line Package •d (A) PACKAGE 1 0.83 Plastic 1 0.83 Sidebraze " w ¡T [I G1 [7


    OCR Scan     		PDF VQ1001 VQ1001J VQ1001P 14-PIN VNDQ03

    52426

    Abstract: No abstract text available
    Text: T em ic VQIOOIJ/P S e m i c o n d u c t o r s N-Channel Enhancement-Mode MOSFET Transistors Product Summary Part Number V{BR DSS M in V) rDS(on) M a x (Q ) VGS(tht (V ) Id (A) 1 @ VGS- 12 V 0.8 to 2.5 0.83 ] @ VGs = 12 V 0.8 to 2.5 0.53 VQ1001J 30 VQ1001P


    OCR Scan     		PDF VQ1001J VQ1001P S-52426-- 14-Apr-97 VQ1001J/P 52426

    VN46AFD

    Abstract: VNDQ1 vnd02 TD1001 VN46AF
    Text: m95SË VNDQ SERIES DIE N-Channel Enhancement-Mode MOS Transistors PART NUM BER V BR DSS (V) r DS(ON) VNDQ1CHP 30 1.2 VNDQ2CHP 60 1.8 (A) • • • • • TN0201L, TN0401L VN0300L, VN0300M VQ1001J/P (VNDQ03 x 4) TD1001Y (VNDQ03 x 2) TQ1001J (VNDQ03 x 4)


    OCR Scan     		PDF TN0201L, TN0401L VN0300L, VN0300M VQ1001J/P VNDQ03 TD1001Y TQ1001J VN46AFD VNDQ1 vnd02 TD1001 VN46AF

    B0725

    Abstract: No abstract text available
    Text: Tem ic VQIOOIJ/P Siliconix N-Channel Enhancement-Mode MOS Transistors Product Summary Part Num ber V BR DSS M in (V) VQ1001J 30 VQ1001P Features Benefits • • • • • • • • • • Low On-Resistance: 0.85 Q Low Threshold: 1.4 V Low Input Capacitance: 38 pF


    OCR Scan     		PDF VQ1001J VQ1001P VQ1001J/P P-37655--Rev. B0725

    Untitled

    Abstract: No abstract text available
    Text: .BlSSSte VNDQ03 N-Channel Enhancement-Mode MOSFETs TYPE PACKAGE DEVICE Single TO-92 TO-226AA • VN0300L, TN0201L, TN0401L Single TO-237 • VN0300M Single 14-Pln Plastic • VQ1001J Quad 14-Pln Dual-ln-Une • VQ1001P Quad Chip • Available as VNDQ1CHP


    OCR Scan     		PDF VNDQ03 VN0300L, TN0201L, TN0401L VN0300M VQ1001J VQ1001P O-226AA) O-237 14-Pln

    VQ1001

    Abstract: No abstract text available
    Text: T e m ic VQIOOIJ/P Siliconix N-Channel Enhancement-Mode MOS "Transistors Product Summary Part Num ber V BR DSS M in (V) VQ1001J rDS(on) M ax (Q ) 30 VQ1001P 1 @ VGS = 12 V 0.8 to 2.5 0.83 1 @ V GS= 12 V 0.8 to 2.5 0.53 Features Benefits Applications • •


    OCR Scan     		PDF VQ1001J VQ1001P P-37655--Rev. VQ1001J/P VQ1001

    2sk to-92

    Abstract: VNS012A Siliconix v020 VNS009A VNS009D VNS013A VNT0080 VNT008A VNT009A
    Text: - 330 - 13=25=0 Si £ tt Vd s or € * Vd g % (V) Vg s Id * /CH (V) (A) 4# •u Pd Ig s s loss max * /CH (W) (nA) Vg s (V) Vd s (V) (kiA) (V) (V) (nA) 14 (Ta=25°C) b(on) Vd s = Vg s Ciss g fs Coss Crss ft & flt % V g s =0 (max) *typ V g s (0) (V) *typ (A)


    OCR Scan     		PDF VNS009A O-204AA VNS009D O-220AB VNS012A O-204AE VQ1006P VQ2001J VQ2001P v02004j 2sk to-92 Siliconix v020 VNS013A VNT0080 VNT008A VNT009A

    VQ1000P

    Abstract: VN10L siliconix VN10KM VN0610L VN10KE VN10KM VN10LE VN10LM VN2222L VQ1000J
    Text: MOSPOWER Selector Guide Continued NChannel MOSPOWER (Continued) Breakdown Voltage (Volts) •d Continuous (Amps) 60 60 5.0 5.0 240 240 170 170 6.0 10.0 6.0 Power Dissipation (Watts) . Part Number 0.2 0.2 0.315 0.315 VN10KE VN10LE 0.3 0.25 0.3 0.25 0.3 0.25


    OCR Scan     		PDF vn10ke vn10le to-52 vn2406m vn2410m VW1706M vn1710m vn1206m vn1210m vn0808m VQ1000P VN10L siliconix VN10KM VN0610L VN10KE VN10KM VN10LE VN10LM VN2222L VQ1000J

    irf540 TTL

    Abstract: IRF620 IRF622 IRF630 IRF631 IRF632 IRF633 IRF640 IRF641 IRF642
    Text: Pin© jopeies aaMOdSOW MOSPOWER Selector Guide Continued N-Channc4 MOSPOWER (Continued) Device T0-220AB /o V T0-202AA C— IIlt~\1 /// 11 TO-39 1 -6 Breakdown Voltage (Volts) rDS(on} (Ohms) Continuous (Amps) 200 200 200 200 200 200 170 150 150 150 150


    OCR Scan     		PDF IRF640 IRF642 IRF630 IRF632 IRF620 IRF622 VN1706D IRF641 IRF643 IRF631 irf540 TTL IRF620 IRF622 IRF630 IRF631 IRF632 IRF633 IRF640 IRF641 IRF642

    buz 350 equivalent

    Abstract: VN0109n5 analog VN10KM equivalent supertex VN10KE VN67ad analog VN0300M equivalent VQ1004 equivalent vq1004 sony 2sj54 siliconix VN10KM
    Text: Siliconix 1-1? f l MOSPOWER Selector Guide Continued NChannel MOSPOWER (Continued) Breakdown Voltage (Volts) •d Continuous (Amps) Power Dissipation (Watts) . Part Number 60 60 5.0 5.0 0.2 0.2 0.315 0.315 VN10KE VN10LE 240 240 170 170 10.0 6.0 0.3 0.25


    OCR Scan     		PDF O-220 VN1000D IRF522 VN1000A IRF540 IRF632 IRF640 buz 350 equivalent VN0109n5 analog VN10KM equivalent supertex VN10KE VN67ad analog VN0300M equivalent VQ1004 equivalent vq1004 sony 2sj54 siliconix VN10KM

    VN0300M

    Abstract: siliconix VN10KM VN0606M 25XX VN0300D VP1001P VQ1001J VQ3001J VQ3001P VQ7254J
    Text: MOSPOWER Selector Guide Continued NChannel MOSPOWER (Continued) Breakdown Voltage (Volts) 60 60 • d Continuous (Amps) Power Dissipation (Watts) . Part Number 5.0 5.0 0.2 0.2 0.315 0.315 VN10KE VN10LE 6.0 0.3 0.25 0.3 0.25 0.3 0.25 0.35 0.4 0.3 0.3 0.25


    OCR Scan     		PDF vn10ke vn10le to-52 vn2406m vn2410m VW1706M vn1710m vn1206m vn1210m vn0808m VN0300M siliconix VN10KM VN0606M 25XX VN0300D VP1001P VQ1001J VQ3001J VQ3001P VQ7254J

    VN2410L equivalent

    Abstract: VN1210M equivalent VN2410L "cross reference" VN2410M VN0300M equivalent MTM8N20 VN1710M IRF340 IRF350 IRF450
    Text: 1-17 MOSPOWER Cross Reference List c « g s s <0J= i n i n m i n • - CM CM CM ^ • 'd d d o d 1o o o o o I m iD lO m | ' r r r 's ' I O O < O Ò I I I I I | ' ' ' lO ' I P ' ' ' ' I I j j CO00 COCO j j ' I o o r i mm | ioom m I L -^ ^ l I c\i CM i I I I I OOOO ' ' I


    OCR Scan     		PDF ivn6100tnu to-39 ivn6200cnd to-220 vn0401d ivn6200cne t0-220 irf533 ivn6200cnf VN2410L equivalent VN1210M equivalent VN2410L "cross reference" VN2410M VN0300M equivalent MTM8N20 VN1710M IRF340 IRF350 IRF450

    2N6658

    Abstract: VN66AF siliconix VN10KM VN89AF VN88AF 2n6657 2N6656 VN67 VN80AF VN89AD
    Text: MOSPOWER Selector Guide Continued NChannel MOSPOWER (Continued) Breakdow n V olta ge (Volts) 60 60 • d C on tin u ou s (Amps) Power D issipation (Watts) . Part Num ber 0.2 0.2 0.315 0.315 VN10KE VN10LE 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0


    OCR Scan     		PDF vn10ke vn10le to-52 vn2406m vn2410m VW1706M vn1710m vn1206m vn1210m vn0808m 2N6658 VN66AF siliconix VN10KM VN89AF VN88AF 2n6657 2N6656 VN67 VN80AF VN89AD

    hh 004 TO92

    Abstract: VN2406M VN2406L vn1710m VN1206M VN1706M VN2406B siliconix VN10KM VN2410M VN1206L
    Text: MOSPOWER Selector Guide Continued NChannel MOSPOWER (Continued) Breakdown Voltage (Volts) •d Continuous (Amps) Power Dissipation (Watts) . Part Number 60 60 5.0 5.0 0.2 0.2 0.315 0.315 VN10KE VN10LE 240 240 170 170 10.0 6.0 0.3 0.25 0.3 0.25 0.3 0.25 0.35


    OCR Scan     		PDF vn10ke vn10le to-52 vn2406m vn2410m VW1706M vn1710m vn1206m vn1210m vn0808m hh 004 TO92 VN2406M VN2406L vn1710m VN1206M VN1706M VN2406B siliconix VN10KM VN2410M VN1206L

    siliconix VN10KM

    Abstract: VN10KM VN2222KM bsr65 BSR64 VN10LM VN2222LM VQ1000J/P VN0610L VN10KE
    Text: MOSPOWER Selector Guide Continued NChannel MOSPOWER (Continued) Breakdown Voltage (Volts) 60 60 • d Continuous (Amps) Power Dissipation (Watts) . Part Number 0.2 0.2 0.315 0.315 VN10KE VN10LE 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 VN2406M


    OCR Scan     		PDF vn10ke vn10le to-52 vn2406m vn2410m VW1706M vn1710m vn1206m vn1210m vn0808m siliconix VN10KM VN10KM VN2222KM bsr65 BSR64 VN10LM VN2222LM VQ1000J/P VN0610L VN10KE