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    Z 40 MOSFET Search Results

    Z 40 MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    Z 40 MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Liteon Semiconductor Corporation LSP3172 Wide Input 2.5A Step Down DC/DC Converter „ FEATURES z 2.5A Output Current z Up to 95% Efficiency z 7V to 30V Input Range z 40µA Shutdown Supply Current z 400kHz Switching Frequency z Adjustable Output Voltage z Cycle-by-Cycle Current Limit Protection


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    PDF LSP3172 400kHz LSP3172 050TYP.

    Untitled

    Abstract: No abstract text available
    Text: Solid State Relays Vdc Input/Vdc Output SSRDC200DC12 Series $ 56 Need More Info? Basic Unit See Technical Article on Solid State Relays in Section Z ߜ Controls up to 40 Amp @ 100 Vdc or 12 Amp @ 200 Vdc ߜ Advanced Semiconductor Technology ߜ Low On-State


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    PDF SSRDC200DC12 P-162

    Untitled

    Abstract: No abstract text available
    Text: SK60MH60 MOSFET,TRANSISTOR Absolute Maximum Ratings Symbol Conditions MOSFET Z<BB Z¥BB T< T<@ O- L EF N$J 407,- %*8,23.-, -', .6.,+ O- L EF ;MG> N$^ Q>JE> *' _ Q &-^ O- L ;MG> N$^ Q> OP Inverse diode SEMITOP 4 MOSFET Module TD L X T< TD@ L X T<@ O- L EF ;MG> N$^


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    PDF SK60MH60

    Untitled

    Abstract: No abstract text available
    Text: RT9701 100mΩ Ω Power Distribution Switches General Description Features The RT9701 is an integrated 100mΩ power switch for self-powered and bus-powered Universal Series Bus USB applications. A built-in charge pump is used to drive the N-Channel MOSFET that is free of parasitic


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    PDF RT9701 RT9701 OT-23-5) OT-23-5 DS9701-12T00

    Untitled

    Abstract: No abstract text available
    Text: RT9701 100mΩ Ω Power Distribution Switches General Description Features The RT9701 is an integrated 100mΩ power switch for self-powered and bus-powered Universal Series Bus USB applications. A built-in charge pump is used to drive the N-Channel MOSFET that is free of parasitic


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    PDF RT9701 RT9701 OT-23-5) OT-23-5 DS9701-10

    NEC 2561A

    Abstract: nec 2501 NEC 2581A opto coupler 2561A NEC 2501A NEC 2561A w 2581A NEC 2501 Opto coupler 2501 photocoupler opto 2581A
    Text: NEPOC Photocoupler Family OC MOSFET™ Family Device Overview 2005 When the product s listed in this document is subject to any applicable import or export control laws and regulation of the authority having competent jurisdiction, such product(s) shall not be imported or exported without obtaining the import or export license.


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    PDF NEPOC-OC-DO20051 NEC 2561A nec 2501 NEC 2581A opto coupler 2561A NEC 2501A NEC 2561A w 2581A NEC 2501 Opto coupler 2501 photocoupler opto 2581A

    80N60

    Abstract: No abstract text available
    Text: Advance Technical Information IXFR80N60P3 Polar3TM HiPerFETTM Power MOSFET VDSS ID25 RDS on trr N-Channel Enhancement Mode Fast Intrinsic Rectifier = = ≤ ≤ 600V 48A Ω 76mΩ 250ns ISOPLUS247 E153432 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C


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    PDF IXFR80N60P3 250ns ISOPLUS247 E153432 80N60P3 80N60

    Untitled

    Abstract: No abstract text available
    Text: RT9701 100mΩ Ω Power Distribution Switches General Description Features The RT9701 is an integrated 100mΩ power switch for self-powered and bus-powered Universal Series Bus USB applications. A built-in charge pump is used to drive the N-Channel MOSFET that is free of parasitic


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    PDF RT9701 RT9701 OT-23-5) OT-23-5 DS9701-14

    IXFN80N60

    Abstract: IXFN80N60P3
    Text: Advance Technical Information IXFN80N60P3 Polar3TM HiPerFETTM Power MOSFET VDSS ID25 RDS on trr N-Channel Enhancement Mode Fast Intrinsic Rectifier = = ≤ ≤ 600V 66A Ω 70mΩ 250ns miniBLOC E153432 S G Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C


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    PDF IXFN80N60P3 250ns E153432 80N60P3 IXFN80N60 IXFN80N60P3

    batterycharger

    Abstract: RT9701 PORT marking sot-23-5
    Text: RT9701 100mΩ Ω Power Distribution Switches General Description Features The RT9701 is an integrated 100mΩ power switch for self-powered and bus-powered Universal Series Bus USB applications. A built-in charge pump is used to drive the N-Channel MOSFET that is free of parasitic


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    PDF RT9701 RT9701 OT-23-5) DS9701-16 batterycharger PORT marking sot-23-5

    Untitled

    Abstract: No abstract text available
    Text: RT9704 Preliminary 50mΩ Ω, 3A Smart Universal Power Switch with Flag General Description Features The RT9704 is a low voltage, high performance single N-Channel MOSFET power switch, designed for power rail on/off control with low RDS ON ≈ 50mΩ and full protection


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    PDF RT9704 RT9704 OT-23-6 DS9704-06

    RT9701

    Abstract: No abstract text available
    Text: RT9701 100mΩ Ω Power Distribution Switches General Description Features The RT9701 is an integrated 100mΩ power switch for self-powered and bus-powered Universal Series Bus USB applications. A built-in charge pump is used to drive the N-Channel MOSFET that is free of parasitic


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    PDF RT9701 RT9701 OT-23-5) DS9701-15

    60n20

    Abstract: 60N20T IXTQ60N20T IXTA60N20T IXTP60N20T ixta 60N20T
    Text: Preliminary Technical Information IXTA60N20T IXTP60N20T IXTQ60N20T TrenchTM Power MOSFET VDSS ID25 RDS on = 200V = 60A Ω ≤ 40mΩ TO-263 AA (IXTA) N-Channel Enhancement Mode For PDP Drivers Avalanche Rated G S D (Tab) TO-220AB (IXTP) Symbol Test Conditions


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    PDF IXTA60N20T IXTP60N20T IXTQ60N20T O-263 O-220AB 60N20T 60n20 IXTQ60N20T IXTA60N20T IXTP60N20T ixta 60N20T

    IXFN50N80Q2

    Abstract: 50N80Q2
    Text: IXFN50N80Q2 HiPerFETTM Power MOSFETs Q-Class VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic RG High dV/dt, Low trr = = ≤ ≤ 800V 50A Ω 160mΩ 300ns miniBLOC, SOT-227 E153432 S G Symbol Test Conditions Maximum Ratings


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    PDF IXFN50N80Q2 300ns OT-227 E153432 50N80Q2 1-18-10-C IXFN50N80Q2

    36p15

    Abstract: IXTP36P15P 3-26-08-B
    Text: Preliminary Technical Information PolarPTM Power MOSFET P-Channel Enhancement Mode Avalanche Rated IXTA36P15P IXTP36P15P IXTQ36P15P S G D TAB G D (TAB) D S Test Conditions VDSS TJ = 25°C to 150°C - 150 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ - 150 V VGSS


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    PDF O-263 IXTA36P15P IXTP36P15P IXTQ36P15P O-220 100ms 36P15P 36p15 3-26-08-B

    IXTR140P10T

    Abstract: No abstract text available
    Text: Preliminary Technical Information IXTR140P10T TrenchPTM Power MOSFET VDSS ID25 RDS on = = ≤ -100V - 90A Ω 13mΩ P-Channel Enhancement Mode Avalanche Rated ISOPLUS247 E153432 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C -100 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ


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    PDF IXTR140P10T -100V ISOPLUS247 E153432 -140A 140P10T IXTR140P10T

    IXTR68P20T

    Abstract: DS100375 DS-100-375
    Text: Advance Technical Information IXTR68P20T TrenchPTM Power MOSFET VDSS ID25 RDS on = = ≤ - 200V - 44A Ω 64mΩ P-Channel Enhancement Mode Avalanche Rated ISOPLUS247 E153432 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C - 200 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ


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    PDF IXTR68P20T ISOPLUS247 E153432 68P20T IXTR68P20T DS100375 DS-100-375

    IXFR64N60Q3

    Abstract: No abstract text available
    Text: Advance Technical Information IXFR64N60Q3 HiperFETTM Power MOSFET Q3-Class VDSS ID25 RDS on trr (Electrically Isolated Tab) = = ≤ ≤ 600V 42A Ω 104mΩ 300ns N-Channel Enhancement Mode Fast Intrinsic Rectifier ISOPLUS247 E153432 Symbol Test Conditions


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    PDF IXFR64N60Q3 300ns ISOPLUS247 E153432 64N60Q3 IXFR64N60Q3

    CRYDOM D40-1

    Abstract: crydom d40
    Text: CRYDOM CO 31E D • 2SM2S37 □□□Üb34 1 «CRY T ^ Z 5 -3 t CRYSOM BULLETIN803B C O M P A N Y SERIES 1-DC MOSFET Output Solid-State Relay 7.0 Thru 40 Amp 100-500 VDC Output Advanced Semiconductor Technology Low On-State Resistance Paralleling Capability


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    PDF 2SM2S37 AP3151-1037) CRYDOM D40-1 crydom d40

    crydom series cy

    Abstract: Crydom CY D4D12 crydon d1d12 crydom series 1 hk relay 803B D1D12 D1D20 D2D07
    Text: CRYDOM CO 31E T> • 2542537 OOOGbSH 1 ■ CRY -p Z 5 -3 i CPY3QM BULLETIN 803B C O M P A N Y SERIES 1-DC MOSFET Output Solid-State Relay 7.0 Thru 40 Amp 100-500 VDC Output Advanced Semiconductor Technology Low On-State Resistance Paralleling Capability High Surge Ratings


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    PDF 30DF1 A115A 30DF2 A115B A115D A115E AP3151-1037) crydom series cy Crydom CY D4D12 crydon d1d12 crydom series 1 hk relay 803B D1D12 D1D20 D2D07

    Untitled

    Abstract: No abstract text available
    Text: r Z 7 SGS-THOMSON Ä T # RäDSlRi i[Liera®[i!lDS$ STP40NE03L-20 N - CHANNEL ENHANCEMENT MODE ” SINGLE FEATURE SIZE ” POWER MOSFET TYP E V dss R d S o ii Id S T P 4 0 N E 0 3 L -2 0 30 V < 0 .0 2 0 Q. 40 A . . . . TYPICAL RDs(on) = 0.014 £1 EXC EPTIO N AL dv/dt CAPABILITY


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    PDF STP40NE03L-20

    Untitled

    Abstract: No abstract text available
    Text: SIE D • Ô13bb71 DGOBSöb 1SÖ m S Z K G s e m ik Roim SEMIKRON INC Absolute Maximum Ratings Symbol V ds V dgr Id Idm V gs Pd Tj, Tstg Visol humidity climate Conditions 1 Rgs = 20 k fl AC, 1 min, 200 |iA DIN 40 040 DIN IEC 68 T.1 Values Units 500 500 48


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    PDF 13bb71 SKM151 fll3bb71 T-39-15

    VIPer30

    Abstract: No abstract text available
    Text: VIPer20B VIPer20BSP SMPS PRIMARY I.C. P R E L IM IN A R Y D A T A TYPE V V IP e r2 0 B /S P dss 40 0V In RDS on 1.3 A 8 .7 Q. FEATURE . ADJUSTABLE SWITCHING FREQUENCY UP T0200KH Z . CURRENT MODE CONTROL . SOFT START AND SHUT DOWN CONTROL . AUTOMATIC BURST MODE OPERATION IN


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    PDF VIPer20B VIPer20BSP T0200KH SO-10 VIPer20Bâ PowerSO-10 VIPer30

    GA-32

    Abstract: CA3240AE1 GA3240 ca3240 application circuit ca3240
    Text: CA3240, CA3240A ¡1 } H a r r i s S E M I C O N D U C T O R w 7 m w Du a l, 4 . 5 M H z , B i M O S O p e r a t i o n a l A m p l i f i e r with M O S F E T I n p u t / B i p o l a r O u t p u t November 1996 Features Description • D u a l V e rs io n o f C A31 40


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    PDF CA3240, CA3240A CA3240A CA3240 CA3140 1N914 GA-32 CA3240AE1 GA3240 ca3240 application circuit