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    ZG J1 Search Results

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    ZG J1 Price and Stock

    Nichicon Corporation UZG0J101MCL1GB

    Aluminum Electrolytic Capacitors - SMD 6.3volts 100uF AEC-Q200
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics UZG0J101MCL1GB 920
    • 1 $0.85
    • 10 $0.592
    • 100 $0.415
    • 1000 $0.291
    • 10000 $0.24
    		Buy Now

    C&K 7205J1ZGE2

    Rocker Switches Miniature Rocker & Lever Handle Switch
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics 7205J1ZGE2 50
    • 1 $29.51
    • 10 $29.36
    • 100 $13.81
    • 1000 $13.81
    • 10000 $13.81
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    C&K U21J1ZGE2

    Rocker Switches
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics U21J1ZGE2 48
    • 1 $15.25
    • 10 $15.24
    • 100 $12.07
    • 1000 $11.43
    • 10000 $11.43
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    C&K 7105J19ZGE22

    Rocker Switches Rocker
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics 7105J19ZGE22 42
    • 1 $17.82
    • 10 $17.75
    • 100 $13.75
    • 1000 $11.57
    • 10000 $11.57
    		Buy Now

    C&K 7105J10ZGE2

    Rocker Switches Rocker
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics 7105J10ZGE2 40
    • 1 $17.56
    • 10 $17.34
    • 100 $12.3
    • 1000 $12.3
    • 10000 $12.3
    		Buy Now
    Find more ZG J1 price and stock on Findchips.com

    ZG J1 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    mark ZG

    Abstract: KTN2222AU
    Text: SEMICONDUCTOR KTN2222AU MARKING SPECIFICATION USM PACKAGE 1. Marking method Laser Marking 2. Marking No. 0 1 ZG 1 2 Item Marking Description Device Mark ZG KTN2222AU hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method


    Original     		PDF KTN2222AU mark ZG KTN2222AU

    ZG SOT-23

    Abstract: ZG SOT23 KTN2222AS SOT-23 MARKING ZG SOT-23 KTN2222AS marking zg MARKING ZG sot 23 zG j1 zg marking sot 23 zG
    Text: SEMICONDUCTOR KTN2222AS MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 2. Marking No. 1 ZG 2 1 Item Marking Description Device Mark ZG KTN2222AS hFE Grade - - * Lot No. 01 2002. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method


    Original     		PDF KTN2222AS OT-23 ZG SOT-23 ZG SOT23 KTN2222AS SOT-23 MARKING ZG SOT-23 KTN2222AS marking zg MARKING ZG sot 23 zG j1 zg marking sot 23 zG

    ZG-1449-18

    Abstract: No abstract text available
    Text: ZG-1449-18 The JMK ZG-1449-18 audio amplifier is a dual channel audio amplifier capable of functioning in an automotive environment. Each channel of the amplifier is capable of both simultaneous and independent operation. The amplifier uses vehicle 12 volt power and contains all the


    Original     		PDF ZG-1449-18 ZG-1449-18

    J1455

    Abstract: 5 volts audio amplifier vibration speaker
    Text: ZG-1449-18 The JMK ZG-1449-18 audio amplifier is a dual channel audio amplifier capable of functioning in an automotive environment. Each channel of the amplifier is capable of both simultaneous and independent operation. The amplifier uses vehicle 12 volt power and contains all the


    Original     		PDF ZG-1449-18 ZG-1449-18 J1455 5 volts audio amplifier vibration speaker

    KZQ 55 - 12

    Abstract: OZEN 915 lek 100K0 402-3K HOK-4 Pb NK 90Z 1fbg N/KZQ+55-12
    Text: Ahgmkhe hnminm O^eZr PPO Ankk^gm + P^kbhnl bgcnkr fZr k^lnem b_ bglmkn\mbhgl Zk^ ghm _heehp^]. Nkh]n\m fZr [^ ]ZfZ`^], hk bgcnkr fZr k^lnem b_ bglmkn\mbhgl Zk^ ghm _heehp^]. {Qa^ _heehpbg` bl Zg ^qieZgZmbhg h_ ma^ lrf[hel nl^] bg ma^ hi^kZmbhg fZgnZe. + \Znmbhg:Ggcnkr hk ]Zg`^k fZr h\\nk ng]^k li^\bZe \hg]bmbhgl.


    Original     		PDF CN-IC-03-0120@ KZQ 55 - 12 OZEN 915 lek 100K0 402-3K HOK-4 Pb NK 90Z 1fbg N/KZQ+55-12

    RD70HVF1

    Abstract: RD70HVF transistor d 1710 S 170 MOSFET TRANSISTOR vhf power transistor 50W 100OHM 50w rf power transistor d 2095 transistor MOSFET 2095 transistor
    Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD70HVF1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor, 175MHz70W 520MHz,50W OUTLINE DESCRIPTION DRAWING 25.0+/-0.3 RD70HVF1 is a MOS FET type transistor specifically designed for VHF/UHF High power amplifiers


    Original     		PDF RD70HVF1 175MHz70W 520MHz RD70HVF1 175MHz 520MHz RD70HVF transistor d 1710 S 170 MOSFET TRANSISTOR vhf power transistor 50W 100OHM 50w rf power transistor d 2095 transistor MOSFET 2095 transistor

    RD70HVF1

    Abstract: RD70HVF1-101 RD70HVF vhf power transistor 50W uhf power transistor 50W MITSUBISHI RF POWER MOS FET S 170 MOSFET TRANSISTOR RF Transistor s-parameter vhf 100OHM Rf power transistor mosfet
    Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD70HVF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz70W 520MHz,50W OUTLINE DESCRIPTION DRAWING 25.0+/-0.3 RD70HVF1 is a MOS FET type transistor specifically


    Original     		PDF RD70HVF1 175MHz70W 520MHz RD70HVF1 RD70HVF1-101 175MHz 520MHz RD70HVF1-101 RD70HVF vhf power transistor 50W uhf power transistor 50W MITSUBISHI RF POWER MOS FET S 170 MOSFET TRANSISTOR RF Transistor s-parameter vhf 100OHM Rf power transistor mosfet

    MAR 703 MOSFET TRANSISTOR

    Abstract: RD15HVF1 RD15HVF1-101 MITSUBISHI RF POWER MOS FET D 1413 transistor micro strip line 100OHM rd15hvf11 rd15hvf transistor 1346
    Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD15HVF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz520MHz,15W OUTLINE 3.2+/-0.4 2 9+/-0.4 High power and High Gain: Pout>15W, Gp>14dB @Vdd=12.5V,f=175MHz


    Original     		PDF RD15HVF1 175MHz520MHz 175MHz 520MHz RD15HVF1 MAR 703 MOSFET TRANSISTOR RD15HVF1-101 MITSUBISHI RF POWER MOS FET D 1413 transistor micro strip line 100OHM rd15hvf11 rd15hvf transistor 1346

    RD15HVF1-101

    Abstract: RD15HVF1 D 1413 transistor D1560 tc 1601 a rd15hvf transistor marking zg TRANSISTOR 2229 transistor D 1557 6015d
    Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD15HVF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz520MHz,15W OUTLINE 3.2±0.4 3.6±0.2 9±0.4 1.2±0.4 2.5 2.5 For output stage of high power amplifiers in VHF/UHF


    Original     		PDF RD15HVF1 175MHz520MHz 175MHz 520MHz RD15HVF1 RD15HVF1-101 D 1413 transistor D1560 tc 1601 a rd15hvf transistor marking zg TRANSISTOR 2229 transistor D 1557 6015d

    RD15HVF1

    Abstract: rd15hvf RD15HV 175mhz gp 845 100OHM mitsubishi rf RD15HVF1 UHF POWER mosfet 3w
    Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD15HVF1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor, 175MHz15W 520MHz,15W DESCRIPTION OUTLINE RD15HVF1 is a MOS FET type transistor specifically designed for VHF/UHF High power amplifiers applica


    Original     		PDF RD15HVF1 175MHz15W 520MHz RD15HVF1 175MHz 520MHz rd15hvf RD15HV 175mhz gp 845 100OHM mitsubishi rf RD15HVF1 UHF POWER mosfet 3w

    RD02MVS1

    Abstract: RD02MUS1B RD02MUS1 T112 mosfet 1412 6D20 mosfet 4501
    Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD02MUS1B RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 0.22 6.0+/-0.15 1.0+/-0.05 2.0+/-0.05 1 4.9+/-0.15


    Original     		PDF RD02MUS1B 175MHz 520MHz RD02MUS1B RD02MUS1 RD02MVS1 T112 mosfet 1412 6D20 mosfet 4501

    RD02MUS2

    Abstract: rd02mus TC 4863 DB T112 D 1652 transistor MOSFET RF POWER TRANSISTOR VHF transistor 0882
    Text: MITSUBISHI RF POWER MOS FET RD02MUS2 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 0.22 6.0+/-0.15 1.0+/-0.05 2.0+/-0.05 1 4.9+/-0.15


    Original     		PDF RD02MUS2 175MHz 520MHz RD02MUS2 rd02mus TC 4863 DB T112 D 1652 transistor MOSFET RF POWER TRANSISTOR VHF transistor 0882

    RD02MUS1

    Abstract: T112 transistor marking zg RD02MVS1
    Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD02MUS1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W RD02MUS1 is a MOS FET type transistor specifically designed for VHF/UHF RF po -wer amplifiers applications.


    Original     		PDF RD02MUS1 175MHz 520MHz RD02MUS1 RD02MUS1-101 T112 transistor marking zg RD02MVS1

    RD07MUS2B

    Abstract: f763 MITSUBISHI RF POWER MOS FET S 170 MOSFET TRANSISTOR 329J MOS 6509 mitsubishi MOSFET RD07MUS2
    Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD07MUS2B RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,527MHz,7W DESCRIPTION OUTLINE DRAWING 6.0+/-0.15 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 0.22 RD07MUS2B is a MOS FET type transistor


    Original     		PDF RD07MUS2B 175MHz 527MHz RD07MUS2B 175MHz) 527MHz) 870MHz) f763 MITSUBISHI RF POWER MOS FET S 170 MOSFET TRANSISTOR 329J MOS 6509 mitsubishi MOSFET RD07MUS2

    RD07MUS2B

    Abstract: transistor jc 817 gp 520 diode gp 817 RF POWER TRANSISTOR f763 transistor I 17-13 0773
    Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD07MUS2B RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,527MHz,7W RD07MUS2B is a MOS FET type transistor specifically designed for VHF/UHF RF power amplifiers applications.


    Original     		PDF RD07MUS2B 175MHz 527MHz RD07MUS2B 175MHz) 527MHz) 870MHz) transistor jc 817 gp 520 diode gp 817 RF POWER TRANSISTOR f763 transistor I 17-13 0773

    RD07MUS2B

    Abstract: RD07MUS RD07MUS2 f763 gp 817 329J RD07M mitsubishi MOSFET jc 817 j-120
    Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD07MUS2B RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,527MHz,7W DESCRIPTION OUTLINE DRAWING 6.0+/-0.15 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 0.22 RD07MUS2B is a MOS FET type transistor


    Original     		PDF RD07MUS2B 175MHz 527MHz RD07MUS2B 175MHz) 527MHz) 870MHz) RD07MUS RD07MUS2 f763 gp 817 329J RD07M mitsubishi MOSFET jc 817 j-120

    RD70HVF

    Abstract: RD70HV vhf power transistor 50W 175MHz70W MOSFET 2095 transistor 50w rf power transistor 520-MHz
    Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD70HVF1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor, 175MHz70W 520MHz,50W OUTLINE DRAWING DESCRIPTION 25.0+/-0.3 RD70HVF1 is a MOS FET type transistor specifically designed for VHF/UHF High power amplifiers


    Original     		PDF RD70HVF1 175MHz70W 520MHz RD70HVF1 175MHz 520MHz RD70HVF RD70HV vhf power transistor 50W MOSFET 2095 transistor 50w rf power transistor 520-MHz

    photodiode array 1550 nm

    Abstract: Photodiode Array 32 element
    Text: ^^ E G zG JU D SO N Parallel Output Germanium Arrays 0.8 to 1.8 jam Description Applications Standard packaging and element configurations result in low cost and quick delivery for J16P Series highquality Germanium photodiode arrays. The 16-element and 32-element linear


    OCR Scan     		PDF 16-element 32-element 1550-nm J16P-40P-S01 16E-SC J16P-40P-500Ux1M 32E-SC 3030fc photodiode array 1550 nm Photodiode Array 32 element

    quadrant detector hgcdte

    Abstract: J15QUAD quadrant photodiode j10quad j16quad quadrant photodiode preamplifier
    Text: J ^ E G zG JUDSON q Figure 29-1 Position S ensor D etector C onfiguration J16PS, J12PS, J10PS Position Sensors A Ge, InAs, or InSb position sensor consists of a single element photodiode with a quadrupole electrode geometry. These devices can provide linear X-Y


    OCR Scan     		PDF J16PS, J12PS, J10PS J16QUAD, J10QUAD, J15QUAD UAD-8D6-R02M J16QU AD-8D6-R05M J10QUA quadrant detector hgcdte J15QUAD quadrant photodiode j10quad j16quad quadrant photodiode preamplifier

    Ge APD

    Abstract: J16A-18A-R100U J16A avalanche photodiodes
    Text: J}ò E G zG J U D S O N _ Ge Avalanche Photodiodes APDs 0.8 to 1.5 um Description Multiplication Characteristics T he J16A series G erm anium A va­ lan ch e P hotodiodes are designed for h ig h ­ speed applications a t 800 an d 1300 nm.


    OCR Scan     		PDF 1300nm, 30MHz 0DDD32fl Ge APD J16A-18A-R100U J16A avalanche photodiodes

    J16-18A-R01M-HS

    Abstract: J16-8SP-R05M-HS J16-18A-R01M germanium photodiode
    Text: J ^ E G zG JU D SO N Germanium Detector Operating Notes 0.8 to 1.8 jim 'f§jjpilljf!' Biii 'viflnJP General Responsivity Operating Circuit J16 Series detectors are high-quality G erm anium photodiodes designed for the 800 to 1800 nm w avelength range. The equivalent circuit for a G erm a­


    OCR Scan     		PDF J16TE 3G30bGS 00D03Sb 3030b05 00GG3E7 J16-18A-R01M-HS J16-8SP-R05M-HS J16-18A-R01M germanium photodiode

    photodiode ge

    Abstract: INSB PHOTODIODE HgCdTe J16QUAD-8D6-R02M J16PS 4 quadrant InSb quadrant detector InSb metal detector sensor j10quad
    Text: E G zG J U D S O N * * — — «ï fflb . *V ÌV '#3é ¿.fi, ir Figure 29-2 Example of Position Linearity Figure 29-1 Position Sensor Detector Configuration - J16PS, J12PS, J10PS — '3 Î fc* i l '»ti'*.«'* Po sitio n S en sors A Ge, InAs, or InSb position sensor


    OCR Scan     		PDF J16PS, J12PS, J10PS J16QUAD, J10QUAD, J15QUAD J16Quad 10x10 J12PS-8B12-S05M J10PS-M204-S05M photodiode ge INSB PHOTODIODE HgCdTe J16QUAD-8D6-R02M J16PS 4 quadrant InSb quadrant detector InSb metal detector sensor j10quad

    M2340

    Abstract: M23400
    Text: MITSUBISHI LS Is M5M23400A-XXXP,FP,VP,RV J1 4194304-BIT 262144-WORD BY 16-BIT CMOS MASK-PROGRAMMABLE ROM /4194304-BIT (524288- WORD BY 8-BIT) CMOS MASK-PROGRAMMABLE ROM DESCRIPTION The M o M23400A -XXXPC, FP, VP or RV)is a 4194304-bit mask-programmable high speed read-only memory.


    OCR Scan     		PDF M5M23400A-XXXP 4194304-BIT 262144-WORD 16-BIT) /4194304-BIT M23400A 4194304-bit M5M23400A-XXXP( 40pin M2340 M23400

    Untitled

    Abstract: No abstract text available
    Text: • bSLHflET 0017234 «ÎSfl ■ MITSUBISHI RF POWER MODULE M57776 889-915MHz, 8V, 300mW, FM MOBILE RADIO OUTLINE DRAWING BLOCK DIAGRAM —@ 1— @ Dim ensions in mm < w i-j> ii-[i © © © © © i i 77777)7777777777777 PIN : ©Pin : RF INPUT V c c i : 1st. DC SUPPLY


    OCR Scan     		PDF M57776 889-915MHz, 300mW, DD17237