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    ZXMN Price and Stock

    Diodes Incorporated ZXMN3B14FTA

    MOSFET N-CH 30V 2.9A SOT23-3
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    DigiKey ZXMN3B14FTA Digi-Reel 42,289 1
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    ZXMN3B14FTA Cut Tape 42,289 1
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    ZXMN3B14FTA Reel 42,000 3,000
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    Mouser Electronics ZXMN3B14FTA 30,469
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    New Advantage Corporation ZXMN3B14FTA 36,000 1
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    Diodes Incorporated ZXMN6A25DN8TA

    MOSFET 2N-CH 60V 3.8A 8SO
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    DigiKey ZXMN6A25DN8TA Cut Tape 2,729 1
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    ZXMN6A25DN8TA Digi-Reel 2,729 1
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    Diodes Incorporated ZXMN6A25KTC

    MOSFET N-CH 60V 7A TO252-3
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    DigiKey ZXMN6A25KTC Digi-Reel 2,054 1
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    Win Source Electronics ZXMN6A25KTC 19,500
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    Diodes Incorporated ZXMN2B03E6TA

    MOSFET N-CH 20V 4.3A SOT23-6
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    Diodes Incorporated ZXMN7A11GQTA

    MOSFET BVDSS: 61V~100V SOT223 T&
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    DigiKey ZXMN7A11GQTA Digi-Reel 854 1
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    ZXMN Datasheets (321)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    ZXMN0545G4 Zetex Semiconductors 450v N-channel Enhancement Mode Mosfet Original PDF
    ZXMN0545G4TA Zetex Semiconductors 450V N-CHANNEL ENHANCEMENT MODE MOSFET Original PDF
    ZXMN0545G4TC Zetex Semiconductors 450V N-CHANNEL ENHANCEMENT MODE MOSFET Original PDF
    ZXMN10A07F Diodes 100V N-CHANNEL ENHANCEMENT MODE MOSFET IN SOT23 PACKAGE Original PDF
    ZXMN10A07F Zetex Semiconductors 100V N-CHANNEL ENHANCEMENT MODE MOSFET Original PDF
    ZXMN10A07FTA Zetex Semiconductors 100V N-CHANNEL ENHANCEMENT MODE MOSFET Original PDF
    ZXMN10A07FTA Zetex Semiconductors 100V N-CHANNEL ENHANCEMENT MODE MOSFET Original PDF
    ZXMN10A07FTC Zetex Semiconductors 100V N-CHANNEL ENHANCEMENT MODE MOSFET Original PDF
    ZXMN10A07FTC Zetex Semiconductors 100V N-CHANNEL ENHANCEMENT MODE MOSFET Original PDF
    ZXMN10A07Z Diodes 100V N-CHANNEL ENHANCEMENT MODE MOSFET IN SOT89 PACKAGE Original PDF
    ZXMN10A07Z Zetex Semiconductors 100V N-CHANNEL ENHANCEMENT MODE MOSFET Original PDF
    ZXMN10A07Z Zetex Semiconductors 100V N-CHANNEL ENHANCEMENT MODE MOSFET Original PDF
    ZXMN10A07ZTA Zetex Semiconductors 100V N-CHANNEL ENHANCEMENT MODE MOSFET Original PDF
    ZXMN10A07ZTA Zetex Semiconductors 100V N-CHANNEL ENHANCEMENT MODE MOSFET Original PDF
    ZXMN10A08DN8 Zetex Semiconductors 100V N-CHANNEL ENHANCEMENT MODE MOSFET Original PDF
    ZXMN10A08DN8TA Zetex Semiconductors 100V N-CHANNEL ENHANCEMENT MODE MOSFET Original PDF
    ZXMN10A08DN8TC Zetex Semiconductors 100V N-CHANNEL ENHANCEMENT MODE MOSFET Original PDF
    ZXMN10A08E6 Diodes 100V N-CHANNEL ENHANCEMENT MODE MOSFET Original PDF
    ZXMN10A08E6 Zetex Semiconductors 100V N-CHANNEL ENHANCEMENT MODE MOSFET Original PDF
    ZXMN10A08E6 Zetex Semiconductors 100V N-CHANNEL ENHANCEMENT MODE MOSFET Original PDF
    ...

    ZXMN Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2A04D

    Abstract: ZXMN2A04DN8 ZXMN2A04DN8TA ZXMN2A04DN8TC dual mosfet marking 506
    Text: ZXMN2A04DN8 DUAL 20V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS= 20V; RDS(ON)= 0.025 ; ID= 7.7A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching


    Original     		PDF ZXMN2A04DN8 ZXMN2A04DN8TA ZXMN2A04DN8TC 2A04D ZXMN2A04DN8 ZXMN2A04DN8TA ZXMN2A04DN8TC dual mosfet marking 506

    Untitled

    Abstract: No abstract text available
    Text: Product specification ZXMN3A14F 30V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits • • • • • • • Max ID BVDSS Max RDS on TA = 25°C (Note 4) 65mΩ @ VGS = 10V 3.2A 95mΩ @ VGS = 4.5V 2.6A 30V Low on-resistance Fast switching speed


    Original     		PDF ZXMN3A14F AEC-Q101

    Untitled

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated ZXMN10A08E6 100V N-CHANNEL ENHANCEMENT MODE MOSFET NEW PRODUCT Product Summary V BR DSS 100V Features and Benefits Max RDS(on) • • • • • Max ID TA = 25°C (Note 5) 250mΩ @ VGS = 10V 1.9A 300mΩ @ VGS = 6V 1.68A


    Original     		PDF ZXMN10A08E6 AEC-Q101 DS31909

    Untitled

    Abstract: No abstract text available
    Text: Product specification ZXMN3B14F 30V N-CHANNEL ENHANCEMENT MODE MOSFET 2.5V GATE DRIVE SUMMARY V BR DSS=30V : RDS(on)=0.08 ; ID=3.5A DESCRIPTION This new generation of Trench MOSFETs from Ty utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes


    Original     		PDF ZXMN3B14F ZXMN3B14FTA

    Untitled

    Abstract: No abstract text available
    Text: Product specification ZXMN2F30FH 20V SOT23 N-channel enhancement mode MOSFET Summary V BR DSS RDS(on) (Ω) ID (A) 20 0.045 @ VGS= 4.5V 4.9 0.065 @ VGS= 2.5V 4.1 Description This new generation Trench MOSFET from TY features low onresistance achievable with low (2.5V) gate drive.


    Original     		PDF ZXMN2F30FH ZXMN2F30FHme

    Untitled

    Abstract: No abstract text available
    Text: Product specification ZXMN3F30FH 30V SOT23 N-channel enhancement mode MOSFET Summary V BR DSS RDS(on) (Ω) ID (A) 30 0.047 @ VGS= 10V 4.6 0.065 @ VGS= 4.5V 4.0 Description This new generation Trench MOSFET from TY features low onresistance achievable with 4.5V gate drive.


    Original     		PDF ZXMN3F30FH ZXMN3F30FHTA 400gs

    DFN322

    Abstract: TS16949 ZXMN2F34MA ZXMN2F34MATA
    Text: ZXMN2F34MA 20V N-channel enhancement mode MOSFET in DFN322 Summary V BR DSS RDS(on) (Ω) ID (A) 20 0.060 @ VGS= 4.5V 8.5 0.120 @ VGS= 2.5V Description This new generation Trench MOSFET from Zetex features low onresistance achievable with low (2.5V) gate drive. The 2mm x 2mm DFN


    Original     		PDF ZXMN2F34MA DFN322 ZXMN2F34MATA D-81541 DFN322 TS16949 ZXMN2F34MA ZXMN2F34MATA

    TS16949

    Abstract: ZXMN6A25N8
    Text: ZXMN6A25N8 60V SO8 N-channel enhancement mode MOSFET Summary V BR DSS RDS(on) (Ω) ID(A) 60 0.050 @ VGS=10V 7.0 0.070 @ VGS=4.5V Description This new generation Trench MOSFET from Zetex features low on-resistance and fast switching, making it ideal for high efficiency power management applications.


    Original     		PDF ZXMN6A25N8 ZXMN6A25N8TA D-81541 TS16949 ZXMN6A25N8

    ZXMN6A09G

    Abstract: TS16949 ZXMN6A09GTA
    Text: ZXMN6A09G 60V SOT223 N-channel enhancement mode MOSFET Summary V BR DSS 60 RDS(on) (⍀) ID (A) 0.040 @ VGS= 10V 7.5 0.060 @ VGS= 4.5V 6.2 Description This new generation of trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast


    Original     		PDF ZXMN6A09G OT223 D-81541 ZXMN6A09G TS16949 ZXMN6A09GTA

    ZXMN3A01E6TC

    Abstract: ZXMN3A01E6 ZXMN3A01E6TA
    Text: ZXMN3A01E6 30V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS=30V; RDS(ON)=0.12⍀ D=3.0A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power


    Original     		PDF ZXMN3A01E6 OT23-6 OT23-6 ZXMN3A01E6TA ZXMN3A01E6TC ZXMN3A01E6TC ZXMN3A01E6 ZXMN3A01E6TA

    MLP832

    Abstract: ZXMN3AM832 ZXMN3AM832TA ZXMN3AM832TC
    Text: ZXMN3AM832 MPPS Miniature Package Power Solutions DUAL 30V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS = 30V; RDS(ON) = 0.12 ; ID= 3A DESCRIPTION Packaged in the new innovative 3mm x 2mm MLP(Micro Leaded Package) outline this dual 30V N channel Trench MOSFET utilizes a unique structure


    Original     		PDF ZXMN3AM832 MLP832 ZXMN3AM832 ZXMN3AM832TA ZXMN3AM832TC

    ZXMN6A07F

    Abstract: ZXMN6A07FTA ZXMN6A07FTC Marking 7n6 Mosfet
    Text: ZXMN6A07F 60V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS=60V; RDS(ON)=0.4 ID=1A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This


    Original     		PDF ZXMN6A07F ZXMN6A07FTA ZXMN6A07FTC ZXMN6A07F ZXMN6A07FTA ZXMN6A07FTC Marking 7n6 Mosfet

    ZXMN3A06DN8

    Abstract: ZXMN3A06DN8TA ZXMN3A06DN8TC 51A SOIC
    Text: ZXMN3A06DN8 DUAL 30V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS= 30V; RDS(ON)= 0.035 ; ID= 6.2A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching


    Original     		PDF ZXMN3A06DN8 ZXMN3A06DN8TA ZXMN3A06DN8TC ZXMN3A06DN8 ZXMN3A06DN8TA ZXMN3A06DN8TC 51A SOIC

    Marking 7n6 Mosfet

    Abstract: marking 7n6 7n6 diode zxmn6a07f
    Text: ZXMN6A07F 60V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features V BR DSS Max RDS(on) 60V 250mΩ@ VGS= 10V 350mΩ @ VGS= 4.5V Max ID TA = 25°C (Note 7) 1.4A 1.2A Description This MOSFET utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed, making it ideal for


    Original     		PDF ZXMN6A07F AEC-Q101 DS33547 Marking 7n6 Mosfet marking 7n6 7n6 diode zxmn6a07f

    ZXMN2A03E6TA

    Abstract: ZXMN2A03E6TC ZXMN2A03E6
    Text: ZXMN2A03E6 20V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS=20V; RDS(ON)=0.055⍀ D=4.5A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage,


    Original     		PDF ZXMN2A03E6 OT23-6 OT23-6 ZXMN2A03E6TA ZXMN2A03E6TC ZXMN2A03E6TA ZXMN2A03E6TC ZXMN2A03E6

    ZXMN6A11DN8

    Abstract: ZXMN6A11DN8TA ZXMN6A11DN8TC 6a11d
    Text: ZXMN6A11DN8 DUAL 60V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS=60V; RDS(ON)=0.15⍀ D=2.7A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching


    Original     		PDF ZXMN6A11DN8 ZXMN6A11DN8TA ZXMN6A11DN8TC ZXMN6A11DN8 ZXMN6A11DN8TA ZXMN6A11DN8TC 6a11d

    7N10

    Abstract: ZXMN10A07Z ZXMN10A07ZTA mosfet structure
    Text: ZXMN10A07Z 100V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY BR DSS=100V; RDS(ON)=1 ; D=1.15A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low


    Original     		PDF ZXMN10A07Z ZXMN10A07ZTA 7N10 ZXMN10A07Z ZXMN10A07ZTA mosfet structure

    ZXMN3A06DN8

    Abstract: ZXMN3A06DN8TA ZXMN3A06DN8TC 51A SOIC 3a06d
    Text: ZXMN3A06DN8 DUAL 30V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS=30V; RDS(ON)=0.035⍀ ID=6.7A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching


    Original     		PDF ZXMN3A06DN8 ZXMN3A06DN8TA ZXMN3A06DN8TC 12m22 ZXMN3A06DN8 ZXMN3A06DN8TA ZXMN3A06DN8TC 51A SOIC 3a06d

    sot23 2A1 device Marking

    Abstract: ZXMN2A01E6 ZXMN2A01E6TA ZXMN2A01E6TC zxm* sot23-6
    Text: ZXMN2A01E6 20V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS=20V; RDS(ON)=0.12⍀ D=3.03A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power


    Original     		PDF ZXMN2A01E6 OT23-6 OT23-6 ZXMN2A01E6TA ZXMN2A01E6TC sot23 2A1 device Marking ZXMN2A01E6 ZXMN2A01E6TA ZXMN2A01E6TC zxm* sot23-6

    10A8 SOT23-6

    Abstract: 10A8 ZXMN10A08E6 ZXMN10A08E6TA ZXMN10A08E6TC
    Text: ZXMN10A08E6 100V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS=100V; RDS(ON)=0.4⍀ D=1.5A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power


    Original     		PDF ZXMN10A08E6 OT23-6 OT23-6 ZXMN10A08E6TA ZXMN10A08E6TC 10A8 SOT23-6 10A8 ZXMN10A08E6 ZXMN10A08E6TA ZXMN10A08E6TC

    TS16949

    Abstract: ZXMN6A09DN8 ZXMN6A09DN8TA
    Text: ZXMN6A09DN8 60V SO8 N-channel enhancement mode MOSFET Summary V BR DSS 60 RDS(on) (⍀) ID (A) 0.040 @ VGS= 10V 5.6 0.060 @ VGS= 4.5V 4.6 Description This new generation of trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast


    Original     		PDF ZXMN6A09DN8 D-81541 TS16949 ZXMN6A09DN8 ZXMN6A09DN8TA

    ZXMN7A11G

    Abstract: ZXMN7A11GTA ZXMN7A11GTC
    Text: ZXMN7A11G 70V N-channel enhancement mode MOSFET Summary VDSS=70V : RDS on =0.13⍀ ID=3.8A Description This new generation of trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage


    Original     		PDF ZXMN7A11G OT223 ZXMN7A11G ZXMN7A11GTA ZXMN7A11GTC

    ZXMN10A11G

    Abstract: ZXMN10A11GTA ZXMN10A11GTC
    Text: ZXMN10A11G 100V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS= 100V; RDS(ON)= 0.35 ID= 2.4A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This


    Original     		PDF ZXMN10A11G OT223 OT223 ZXMN10A11GTA ZXMN10A11GTC ZXMN10A11G ZXMN10A11GTA ZXMN10A11GTC

    4A06

    Abstract: ZXMN4A06K ZXMN4A06KTC
    Text: ZXMN4A06K 40V N-channel enhancement mode MOSFET Summary V BR DSS= -40V; RDS(ON) = 0.05⍀; ID = 10.9A Description This new generation of trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage,


    Original     		PDF ZXMN4A06K 4A06 ZXMN4A06K ZXMN4A06KTC