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    ZXMN1 Price and Stock

    Diodes Incorporated ZXMN10A08GTA

    MOSFET N-CH 100V 2A SOT223
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    DigiKey ZXMN10A08GTA Digi-Reel 13,184 1
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    Diodes Incorporated ZXMN10A07ZTA

    MOSFET N-CH 100V 1A SOT89-3
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    DigiKey ZXMN10A07ZTA Digi-Reel 10,587 1
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    Diodes Incorporated ZXMN10B08E6TA

    MOSFET N-CH 100V 1.6A SOT26
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    DigiKey ZXMN10B08E6TA Reel 9,000 3,000
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    Diodes Incorporated ZXMN10A25KTC

    MOSFET N-CH 100V 4.2A TO252-3
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    DigiKey ZXMN10A25KTC Cut Tape 4,720 1
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    Diodes Incorporated ZXMN10A11GTA

    MOSFET N-CH 100V 1.7A SOT223
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    DigiKey ZXMN10A11GTA Cut Tape 3,974 1
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    ZXMN1 Datasheets (54)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    ZXMN10A07F Diodes 100V N-CHANNEL ENHANCEMENT MODE MOSFET IN SOT23 PACKAGE Original PDF
    ZXMN10A07F Zetex Semiconductors 100V N-CHANNEL ENHANCEMENT MODE MOSFET Original PDF
    ZXMN10A07FTA Zetex Semiconductors 100V N-CHANNEL ENHANCEMENT MODE MOSFET Original PDF
    ZXMN10A07FTA Zetex Semiconductors 100V N-CHANNEL ENHANCEMENT MODE MOSFET Original PDF
    ZXMN10A07FTC Zetex Semiconductors 100V N-CHANNEL ENHANCEMENT MODE MOSFET Original PDF
    ZXMN10A07FTC Zetex Semiconductors 100V N-CHANNEL ENHANCEMENT MODE MOSFET Original PDF
    ZXMN10A07Z Diodes 100V N-CHANNEL ENHANCEMENT MODE MOSFET IN SOT89 PACKAGE Original PDF
    ZXMN10A07Z Zetex Semiconductors 100V N-CHANNEL ENHANCEMENT MODE MOSFET Original PDF
    ZXMN10A07Z Zetex Semiconductors 100V N-CHANNEL ENHANCEMENT MODE MOSFET Original PDF
    ZXMN10A07ZTA Zetex Semiconductors 100V N-CHANNEL ENHANCEMENT MODE MOSFET Original PDF
    ZXMN10A07ZTA Zetex Semiconductors 100V N-CHANNEL ENHANCEMENT MODE MOSFET Original PDF
    ZXMN10A08DN8 Zetex Semiconductors 100V N-CHANNEL ENHANCEMENT MODE MOSFET Original PDF
    ZXMN10A08DN8TA Zetex Semiconductors 100V N-CHANNEL ENHANCEMENT MODE MOSFET Original PDF
    ZXMN10A08DN8TC Zetex Semiconductors 100V N-CHANNEL ENHANCEMENT MODE MOSFET Original PDF
    ZXMN10A08E6 Diodes 100V N-CHANNEL ENHANCEMENT MODE MOSFET Original PDF
    ZXMN10A08E6 Zetex Semiconductors 100V N-CHANNEL ENHANCEMENT MODE MOSFET Original PDF
    ZXMN10A08E6 Zetex Semiconductors 100V N-CHANNEL ENHANCEMENT MODE MOSFET Original PDF
    ZXMN10A08E6 Zetex Semiconductors 100V N-CHANNEL ENHANCEMENT MODE MOSFET Original PDF
    ZXMN10A08E6TA Zetex Semiconductors 100V N-CHANNEL ENHANCEMENT MODE MOSFET Original PDF
    ZXMN10A08E6TA Zetex Semiconductors 100V N-CHANNEL ENHANCEMENT MODE MOSFET Original PDF

    ZXMN1 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated ZXMN10A08E6 100V N-CHANNEL ENHANCEMENT MODE MOSFET NEW PRODUCT Product Summary V BR DSS 100V Features and Benefits Max RDS(on) • • • • • Max ID TA = 25°C (Note 5) 250mΩ @ VGS = 10V 1.9A 300mΩ @ VGS = 6V 1.68A


    Original     		PDF ZXMN10A08E6 AEC-Q101 DS31909

    7N10

    Abstract: ZXMN10A07Z ZXMN10A07ZTA mosfet structure
    Text: ZXMN10A07Z 100V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY BR DSS=100V; RDS(ON)=1 ; D=1.15A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low


    Original     		PDF ZXMN10A07Z ZXMN10A07ZTA 7N10 ZXMN10A07Z ZXMN10A07ZTA mosfet structure

    10A8 SOT23-6

    Abstract: 10A8 ZXMN10A08E6 ZXMN10A08E6TA ZXMN10A08E6TC
    Text: ZXMN10A08E6 100V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS=100V; RDS(ON)=0.4⍀ D=1.5A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power


    Original     		PDF ZXMN10A08E6 OT23-6 OT23-6 ZXMN10A08E6TA ZXMN10A08E6TC 10A8 SOT23-6 10A8 ZXMN10A08E6 ZXMN10A08E6TA ZXMN10A08E6TC

    ZXMN10A11G

    Abstract: ZXMN10A11GTA ZXMN10A11GTC
    Text: ZXMN10A11G 100V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS= 100V; RDS(ON)= 0.35 ID= 2.4A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This


    Original     		PDF ZXMN10A11G OT223 OT223 ZXMN10A11GTA ZXMN10A11GTC ZXMN10A11G ZXMN10A11GTA ZXMN10A11GTC

    DS33570

    Abstract: 10b8 SOT23-6
    Text: ZXMN10B08E6 100V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary NEW PRODUCT V BR DSS 100V Features and Benefits Max ID TA = +25°C (Note 6) 1.9A 1.68A Max RDS(on) 230mΩ @ VGS = 10V 300mΩ @ VGS = 4.5V Description and Applications This new generation TRENCH MOSFETs from Diodes utilizes a


    Original     		PDF ZXMN10B08E6 AEC-Q101 DS33570 10b8 SOT23-6

    Untitled

    Abstract: No abstract text available
    Text: ZXMN10A25K 100V DPAK N-channel enhancement mode MOSFET Summary RDS on (V) ID (A) 0.125 @ VGS= 10V 6.4 0.150 @ VGS= 6V 5.8 V(BR)DSS 100 Description This new generation trench MOSFET from Zetex features a unique structure combining the benefits of low on-resistance and fast


    Original     		PDF ZXMN10A25K ZXMN10A25KTC 10A25

    Untitled

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated ADV AN CE I N FORM AT I ON ZXMN10A11G 100V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS Features and Benefits ID RDS(on) TA = 25°C 350mΩ @ VGS = 10V 2.4A 450mΩ @ VGS = 6.0V 2.1A 100V • Fast switching speed


    Original     		PDF ZXMN10A11G AEC-Q101 J-STD-020 MIL-STD-202, DS32056

    Untitled

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated Green ZXMN10A25K 100V N-CHANNEL ENHANCEMENT MODE MOSFET Features Product Summary V BR DSS RDS(ON) Package 125mΩ @ VGS= 10V TO252 (DPAK) 100V 150mΩ @ VGS= 6V • Max ID TA = +25°C Low On-Resistance Fast Switching Speed


    Original     		PDF ZXMN10A25K AEC-Q101 DS33569

    T0-252

    Abstract: ZXMN10A09K ZXMN10A09KTC T0252
    Text: ZXMN10A09K 100V N-CHANNEL ENHANCEMENT MODE MOSFET IN D-PAK SUMMARY V BR DSS=100V : RDS(on)=0.085 ; ID=7.7A DESCRIPTION This new generation of Trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching


    Original     		PDF ZXMN10A09K T0-252) ZXMN10A09KTC T0-252 ZXMN10A09K ZXMN10A09KTC T0252

    ZXMN10A25

    Abstract: No abstract text available
    Text: ZXMN10A25G 100V SOT223 N-channel enhancement mode MOSFET Summary RDS on (⍀) ID (A) 0.125 @ VGS= 10V 4 0.150 @ VGS= 6V 3.7 V(BR)DSS 100 Description This new generation trench MOSFET from Zetex features a unique structure which combininthe benefits of low on-resistance and fast


    Original     		PDF ZXMN10A25G OT223 ZXMN10A25GTA 10A25 522-ZXMN10A25GTA ZXMN10A25GTA ZXMN10A25

    ZXMN10A08E6

    Abstract: 10A8 SOT23-6 10A8 ZXMN10A08E6TA ZXMN10A08E6TC
    Text: ZXMN10A08E6 100V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS= 100V; RDS(ON)= 0.4 ID= 1.5A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This


    Original     		PDF ZXMN10A08E6 OT23-6 OT23-6 ZXMN10A08E6TA ZXMN10A08E6TC ZXMN10A08E6 10A8 SOT23-6 10A8 ZXMN10A08E6TA ZXMN10A08E6TC

    ZXMN10A07F

    Abstract: ZXMN10A07FTA ZXMN10A07FTC
    Text: ZXMN10A07F 100V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS= 100V : RDS(on)= 0.7 ID= 0.8A DESCRIPTION This new generation of Trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes


    Original     		PDF ZXMN10A07F ZXMN10A07FTA ZXMN10A07FTC 1000ew ZXMN10A07F ZXMN10A07FTA ZXMN10A07FTC

    10A09

    Abstract: ZXMN10A09 ZXMN10A09K ZXMN10A09KTC 114L1 4.5V TO 100V INPUT REGULATOR
    Text: A Product Line of Diodes Incorporated ZXMN10A09K 100V N-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Product Summary V BR DSS Features and Benefits RDS(on) ID TA = 25°C • Low input capacitance • Low on-resistance


    Original     		PDF ZXMN10A09K AEC-Q101 O252-3L DS32045 10A09 ZXMN10A09 ZXMN10A09K ZXMN10A09KTC 114L1 4.5V TO 100V INPUT REGULATOR

    fs405

    Abstract: No abstract text available
    Text: ZXMN10A08E6 100V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS = 100V; RDS(ON) = 0.25 ; ID = 1.9A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them


    Original     		PDF ZXMN10A08E6 OT23-6 OT23-6 ZXMN10A08E6TA ZXMN10A08E6TC TX75248, fs405

    Untitled

    Abstract: No abstract text available
    Text: ZXMN10A25G 100V SOT223 N-channel enhancement mode MOSFET Summary V BR DSS 100 RDS(on) (⍀) ID (A) 0.125 @ VGS= 10V 4 0.150 @ VGS= 6V 3.7 Description This new generation trench MOSFET from Zetex features a unique structure which combininthe benefits of low on-resistance and fast


    Original     		PDF ZXMN10A25G OT223

    T0-252

    Abstract: ZXMN10A09K ZXMN10A09KTC
    Text: ZXMN10A09K 100V N-CHANNEL ENHANCEMENT MODE MOSFET IN DPAK SUMMARY V BR DSS=100V : RDS(on)=0.085 ; ID=7.7A DESCRIPTION This new generation of Trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching


    Original     		PDF ZXMN10A09K T0-252) ZXMN10A09KTC T0-252 ZXMN10A09K ZXMN10A09KTC

    10A8 SOT23-6

    Abstract: 10A8 MOSFET sot23-6 TOP marking sot23-6 power MOSFET sot23-6 ZXMN10A08E6TC MARKING A SOT23-6 DSS SOT23 sot23-6 ZXMN10A08E6
    Text: ZXMN10A08E6 100V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS = 100V; RDS(ON) = 0.25 ID = 1.9A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them


    Original     		PDF ZXMN10A08E6 OT23-6 OT23-6 ZXMN10A08E6TA ZXMN10A08E6T ZXMN10A08E6TC 10A8 SOT23-6 10A8 MOSFET sot23-6 TOP marking sot23-6 power MOSFET sot23-6 ZXMN10A08E6TC MARKING A SOT23-6 DSS SOT23 sot23-6 ZXMN10A08E6

    ZXMN10A11GTA

    Abstract: ZXMN10A11G ZXMN10A11GTC
    Text: ZXMN10A11G DUAL 100V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS=100V; RDS(ON)=0.6⍀ D=1.9A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them


    Original     		PDF ZXMN10A11G OT223 ZXMN10A11GTA ZXMN10A11GTA ZXMN10A11G ZXMN10A11GTC

    ZXMN10A07F

    Abstract: ZXMN10A07FTA ZXMN10A07FTC
    Text: ZXMN10A07F 100V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS= 100V; RDS(ON)= 1⍀ D= 0.64A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage,


    Original     		PDF ZXMN10A07F ZXMN10A07FTA ZXMN10A07FTC ZXMN10A07F ZXMN10A07FTA ZXMN10A07FTC

    marking code 7N1

    Abstract: sot23 7N1 DS33564
    Text: A Product Line of Diodes Incorporated ZXMN10A07F 100V N-CHANNEL ENHANCEMENT MODE MOSFET IN SOT23 PACKAGE Product Summary Features BVDSS RDS ON Max 100V 700mΩ @ VGS = 10V 900mΩ @ VGS = 6V • • • • • • • ID TA = +25°C (Note 6) 0.76A 0.67A Low On-Resistance


    Original     		PDF ZXMN10A07F AEC-Q101 DS33564 marking code 7N1 sot23 7N1

    SOT89 MARKING CODE

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated ZXMN10A07Z ADVANCE INFORMATION 100V N-CHANNEL ENHANCEMENT MODE MOSFET IN SOT89 PACKAGE Product Summary Features and Benefits V BR DSS RDS(on) Max 100V 700mΩ @ VGS = 10V 900mΩ @ VGS = 6V • • • • • • • ID max


    Original     		PDF ZXMN10A07Z AEC-Q101 DS33565 SOT89 MARKING CODE

    ZXMN10A08E6

    Abstract: 10A8 ZXMN10A08E6TA ZXMN10A08E6TC DS31909 marking 10A8 10A8 SOT23-6
    Text: A Product Line of Diodes Incorporated ZXMN10A08E6 100V N-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Product Summary V BR DSS Features and Benefits ID RDS(on) 100V TA = 25°C 0.25Ω • Low on-resistance •


    Original     		PDF ZXMN10A08E6 AEC-Q101 OT23-6 DS31909 ZXMN10A08E6 10A8 ZXMN10A08E6TA ZXMN10A08E6TC marking 10A8 10A8 SOT23-6

    Untitled

    Abstract: No abstract text available
    Text: ZXMN10A08DN8 100V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS = 100V; RDS(ON) = 0.25 ID = 2.1A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This


    Original     		PDF ZXMN10A08DN8 ZXMN10A08DN8TA

    ZXMN10A07F

    Abstract: sot23 7N1 ZXMN10A07FTA ZXMN10A07FTC
    Text: ZXMN10A07F 100V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS= 100V; RDS(ON)= 1 ID= 0.64A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This


    Original     		PDF ZXMN10A07F ZXMN10A07FTA ZXMN10A07FTC ZXMN10A07F sot23 7N1 ZXMN10A07FTA ZXMN10A07FTC