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Kyocera AVX Components 100B1R5BW500XT1K CAP CER 1.5PF 500V P90 1111
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DigiKey	100B1R5BW500XT1K	Cut Tape	6,208		1	1 $8.81 10 $6.132 100 $4.706 1000 $4.12556 10000 $4.12556	Buy Now
	100B1R5BW500XT1K	Reel	3,000		1,000	1 - 10 - 100 - 1000 $3.9439 10000 $3.79339	Buy Now
Richardson RFPD	100B1R5BW500XT1K				1,000	1 - 10 - 100 - 1000 $2.21 10000 $1.72	Buy Now
Kyocera AVX Components 100B1R0CW500XT1K CAP CER 1PF 500V P90 1111
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	100B1R0CW500XT1K	Cut Tape	2,003		1	1 $5.19 10 $3.498 100 $2.6018 1000 $2.2372 10000 $2.2372	Buy Now
	100B1R0CW500XT1K	Reel	1,000		1,000	1 - 10 - 100 - 1000 $2.12317 10000 $1.92817	Buy Now
Mouser Electronics	100B1R0CW500XT1K		1,287			1 $4.47 10 $3.28 100 $2.49 1000 $1.98 10000 $1.89	Buy Now
Kyocera AVX Components 100B1R8BW500XT1K CAP CER 1.8PF 500V P90 1111
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DigiKey	100B1R8BW500XT1K	Reel	2,000		1,000	1 - 10 - 100 - 1000 $4.33992 10000 $4.17824	Buy Now
	100B1R8BW500XT1K	Cut Tape	20		1	1 $9.57 10 $6.69 100 $5.1584 1000 $4.53502 10000 $4.53502	Buy Now
Mouser Electronics	100B1R8BW500XT1K		715			1 $6.86 10 $5.42 100 $4.18 1000 $3.37 10000 $3.27	Buy Now
Kyocera AVX Components 100B1R2BT500XT1K CAP CER 1.2PF 500V P90 1111
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	100B1R2BT500XT1K	Reel	2,000		1,000	1 - 10 - 100 - 1000 $4.36003 10000 $4.1978	Buy Now
	100B1R2BT500XT1K	Cut Tape	841		1	1 $9.61 10 $6.719 100 $5.1813 1000 $4.55582 10000 $4.55582	Buy Now
Kyocera AVX Components 100B1R0BT500XT1K CAP CER 1PF 500V P90 1111
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	100B1R0BT500XT1K	Cut Tape	1,396		1	1 $6.75 10 $4.623 100 $3.4928 1000 $3.03308 10000 $3.03308	Buy Now
	100B1R0BT500XT1K	Reel	1,000		1,000	1 - 10 - 100 - 1000 $2.88922 10000 $2.71	Buy Now

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100B1R Datasheets (32)

Part	Manufacturer	Description	Datasheet Type	PDF
100B1R0BP500XT	American Technical Ceramics	Capacitors - Ceramic Capacitors - CAP CER 1PF 500V P90 1111	Original	PDF
100B1R0BT500XT	American Technical Ceramics	Capacitors - Ceramic Capacitors - CAP CER 1PF 500V P90 1111	Original	PDF
100B1R0BT500XT1K	American Technical Ceramics	Ceramic Capacitor 1PF 500V P90 1111	Original	PDF
100B1R0BTN500XT	American Technical Ceramics	Capacitors - Ceramic Capacitors - CAP CER 1PF 500V P90 1111	Original	PDF
100B1R0BTN500XT1K	American Technical Ceramics	Ceramic Capacitor 1PF 500V P90 1111	Original	PDF
100B1R0BW500XT	American Technical Ceramics	Capacitors - Ceramic Capacitors - CAP CER 1PF 500V P90 1111	Original	PDF
100B1R0BW500XT1K	American Technical Ceramics	Ceramic Capacitor 1PF 500V P90 1111	Original	PDF
100B1R0CT500XT	American Technical Ceramics	Capacitors - Ceramic Capacitors - CAP CER 1PF 500V P90 1111	Original	PDF
100B1R0CT500XT1K	American Technical Ceramics	Ceramic Capacitor 1PF 500V P90 1111	Original	PDF
100B1R0CW500XT	American Technical Ceramics	Capacitors - Ceramic Capacitors - CAP CER 1PF 500V P90 1111	Original	PDF
100B1R0CW500XT1K	American Technical Ceramics	Ceramic Capacitor 1PF 500V P90 1111	Original	PDF
100B1R2BT500XT	American Technical Ceramics	Capacitors - Ceramic Capacitors - CAP CER 1.2PF 500V P90 1111	Original	PDF
100B1R2BT500XT1K	American Technical Ceramics	Ceramic Capacitor 1.2PF 500V P90 1111	Original	PDF
100B1R2BW500XT	American Technical Ceramics	Capacitors - Ceramic Capacitors - CAP CER 1.2PF 500V P90 1111	Original	PDF

100B1R2BW500XT1K	American Technical Ceramics	Ceramic Capacitor 1.2PF 500V P90 1111	Original	PDF
100B1R2CT500XT	American Technical Ceramics	Capacitors - Ceramic Capacitors - CAP CER 1.2PF 500V P90 1111	Original	PDF
100B1R2CT500XT1K	American Technical Ceramics	Ceramic Capacitor 1.2PF 500V P90 1111	Original	PDF
100B1R3CW500XT	American Technical Ceramics	Capacitors - Ceramic Capacitors - CAP CER 1.3PF 500V P90 1111	Original	PDF
100B1R5BT500XT	American Technical Ceramics	Capacitors - Ceramic Capacitors - CAP CER 1.5PF 500V P90 1111	Original	PDF
100B1R5BT500XT1K	American Technical Ceramics	Ceramic Capacitor 1.5PF 500V P90 1111	Original	PDF

100B1R Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data MRF9080 Rev. 5, 12/2004 RF Power Field Effect Transistors N−Channel Enhancement−Mode Lateral MOSFETs Designed for GSM 900 MHz frequency band, the high gain and broadband performance of these devices make them ideal for large−signal, common−	Original	PDF	MRF9080 MRF9080LR3 MRF9080LSR3
MRF9030MBR1 Abstract: MRF9030MR1 100B7R5JP Text: MOTOROLA Order this document by MRF9030M/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors MRF9030MR1 MRF9030MBR1 N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices	Original	PDF	MRF9030M/D MRF9030MR1 MRF9030MBR1 MRF9030MR1 MRF9030MBR1 100B7R5JP
100B0R1BW Abstract: 100A1R5BW A113 A114 A115 AN1955 C101 JESD22 MW6IC2015GNBR1 MW6IC2015NBR1 Text: Freescale Semiconductor Technical Data Document Number: MW6IC2015N Rev. 0, 2/2006 RF LDMOS Wideband Integrated Power Amplifiers The MW6IC2015N wideband integrated circuit is designed for base station applications. It uses Freescale’s newest High Voltage 26 to 32 Volts LDMOS	Original	PDF	MW6IC2015N MW6IC2015N MW6IC2015NBR1 MW6IC2015GNBR1 100B0R1BW 100A1R5BW A113 A114 A115 AN1955 C101 JESD22 MW6IC2015GNBR1
C1206C104KRAC7800 Abstract: 100b6r8 AGR09045E AGR09045EF AGR09045EU JESD22-C101A RM73B2B103J 100B470JW Text: AGR09045E 45 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR09045E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular	Original	PDF	AGR09045E Hz--895 AGR09045E DS04-295RFPP DS04-198RFPP) C1206C104KRAC7800 100b6r8 AGR09045EF AGR09045EU JESD22-C101A RM73B2B103J 100B470JW
RM73B2B Abstract: 465B AN1955 MRF5S19130H MRF5S19130HR3 MRF5S19130HSR3 RM73B2 Text: Freescale Semiconductor Technical Data Document Number: MRF5S19130H Rev. 2, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for PCN and PCS base station applications at frequencies from 1900 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier amplifier	Original	PDF	MRF5S19130H MRF5S19130HR3 MRF5S19130HSR3 RM73B2B 465B AN1955 MRF5S19130H MRF5S19130HSR3 RM73B2
A113 Abstract: A114 A115 C101 JESD22 MRF6S18060MBR1 Text: Freescale Semiconductor Technical Data Document Number: MRF6S18060 Rev. 2, 5/2006 Replaced by MRF6S18060NR1/NBR1. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead - free terminations.	Original	PDF	MRF6S18060 MRF6S18060NR1/NBR1. MRF6S18060MR1 MRF6S18060MBR1 MRF6S18060MR1 A113 A114 A115 C101 JESD22 MRF6S18060MBR1
J294 Abstract: 200B104MW 465B A114 A115 AN1955 JESD22 MRF7S19170HR3 MRF7S19170HSR3 MRF7S19170HS Text: Freescale Semiconductor Technical Data Document Number: MRF7S19170H Rev. 0, 10/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF7S19170HR3 MRF7S19170HSR3 Designed for CDMA base station applications with frequencies from 1930 to	Original	PDF	MRF7S19170H MRF7S19170HR3 MRF7S19170HSR3 MRF7S19170HR3 DataMRF7S19170H J294 200B104MW 465B A114 A115 AN1955 JESD22 MRF7S19170HSR3 MRF7S19170HS
ipc 9850 Abstract: J12-30 1000 watts power amp circuit diagram JESD22-A114 MW6IC2240GNBR1 MW6IC2240N MW6IC2240NBR1 Text: Freescale Semiconductor Technical Data Document Number: MW6IC2240N Rev. 1, 1/2006 RF LDMOS Wideband Integrated Power Amplifiers The MW6IC2240N wideband integrated circuit is designed with on -chip matching that makes it usable from 2110 to 2170 MHz. This multi - stage	Original	PDF	MW6IC2240N MW6IC2240N MW6IC2240NBR1 MW6IC2240GNBR1 ipc 9850 J12-30 1000 watts power amp circuit diagram JESD22-A114 MW6IC2240GNBR1
RF-35-0300 Abstract: A04T-5 93F2975 A113 MRF9060MBR1 MRF9060MR1 100B470JP 100B100JP 44F3360 Text: MOTOROLA Order this document by MRF9060M/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices	Original	PDF	MRF9060M/D MRF9060MR1 MRF9060MBR1 RF-35-0300 A04T-5 93F2975 A113 MRF9060MBR1 100B470JP 100B100JP 44F3360
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Replaced by MRF9030NR1/NBR1. There are no form, fit or function changes with this part MRF9030M Rev. 9, 5/2006 replacement. N suffix added to part number to indicate transition to lead - free terminations. RF Power Field Effect Transistors	Original	PDF	MRF9030NR1/NBR1. MRF9030M MRF9030MR1 MRF9030MBR1 MRF9030MR1
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRF5S21100H Rev. 3, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S21100HR3 MRF5S21100HSR3 Designed for W- CDMA base station applications with frequencies from 2110	Original	PDF	MRF5S21100H MRF5S21100HR3 MRF5S21100HSR3 MRF5S21100HR3
Untitled Abstract: No abstract text available Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF5S21150/D SEMICONDUCTOR TECHNICAL DATA MRF5S21150R3 and MRF5S21150SR3 replaced by MRF5S21150HR3 and MRF5S21150HSR3. H suffix indicates lower thermal resistance package. MRF5S21150R3 RF Power Field Effect Transistors MRF5S21150SR3	Original	PDF	MRF5S21150/D MRF5S21150R3 MRF5S21150SR3 MRF5S21150HR3 MRF5S21150HSR3. MRF5S21150R3 MRF5S21150SR3
C-XM-99-001-01 Abstract: pep cxm MRF21010 Text: Freescale Semiconductor Technical Data MRF21010 Rev. 8, 12/2004 RF Power Field Effect Transistors MRF21010LR1 MRF21010LSR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier	Original	PDF	MRF21010 MRF21010LR1 MRF21010LSR1 C-XM-99-001-01 pep cxm
100B0R5BW Abstract: MW4IC2020NBR1 Text: Freescale Semiconductor Technical Data Document Number: MW4IC2020 Rev. 7, 8/2005 RF LDMOS Wideband Integrated Power Amplifiers The MW4IC2020 wideband integrated circuit is designed with on - chip matching that makes it usable from 1600 to 2400 MHz. This multi - stage	Original	PDF	MW4IC2020 MW4IC2020NBR1 MW4IC2020GNBR1 MW4IC2020MBR1 MW4IC2020GMBR1 MW4IC2020 100B0R5BW

C8450 Abstract: MRF5S4140H Text: Document Number: MRF5S4140H Rev. 1, 1/2006 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S4140HR3 MRF5S4140HSR3 Designed for broadband commercial and industrial applications with frequencies from 400 to 500 MHz. The high gain and broadband performance of these	Original	PDF	MRF5S4140H 28-volt MRF5S4140HR3 MRF5S4140HSR3 MRF5S4140H C8450
mrf5s21090 Abstract: No abstract text available Text: MRF5S21090H Rev. 1, 12/2004 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S21090HR3 MRF5S21090HSR3 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L	Original	PDF	MRF5S21090H MRF5S21090HR3 MRF5S21090HSR3 mrf5s21090
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRF5P20180HR6 Rev. 1, 5/2006 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for W- CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.	Original	PDF	MRF5P20180HR6
100B201JT500XT Abstract: CRCW12063900FKEA 365 pF variable capacitor 100B120JT500XT GX0300-55-22 MRF282 Text: Freescale Semiconductor Technical Data Document Number: MRF282-2 Rev. 17, 10/2008 RF Power Field Effect Transistor MRF282ZR1 Designed for Class A and Class AB PCN and PCS base station applications with frequencies up to 2600 MHz. Suitable for FM, TDMA, CDMA, and	Original	PDF	MRF282--2 MRF282ZR1 458C-03, NI-200Z MRF282--2 100B201JT500XT CRCW12063900FKEA 365 pF variable capacitor 100B120JT500XT GX0300-55-22 MRF282
MW4IC2230NB Abstract: j631 marking j130 J242 Text: Freescale Semiconductor Technical Data Document Number: MW4IC2230 Rev. 4, 8/2005 RF LDMOS Wideband Integrated Power Amplifiers The MW4IC2230 wideband integrated circuit is designed for W - CDMA base station applications. It uses Freescale’s newest High Voltage 26 to 28 Volts	Original	PDF	MW4IC2230 MW4IC2230NBR1 MW4IC2230GNBR1 MW4IC2230MBR1 MW4IC2230GMBR1 MW4IC2230 MW4IC2230NB j631 marking j130 J242
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MW6IC2240N Rev. 2, 5/2006 RF LDMOS Wideband Integrated Power Amplifiers The MW6IC2240N wideband integrated circuit is designed with on - chip matching that makes it usable from 2110 to 2170 MHz. This multi - stage	Original	PDF	MW6IC2240N MW6IC2240NBR1 MW6IC2240GNBR1 MW6IC2240N
Untitled Abstract: No abstract text available Text: MOTOROLA Order this document by MRF5S21150/D SEMICONDUCTOR TECHNICAL DATA MRF5S21150 RF Power Field Effect Transistors MRF5S21150R3 N–Channel Enhancement–Mode Lateral MOSFETs MRF5S21150S Designed for W–CDMA base station applications with frequencies from 2110	Original	PDF	MRF5S21150/D MRF5S21150 MRF5S21150R3 MRF5S21150S MRF5S21150SR3 MRF5S21150SR3
Untitled Abstract: No abstract text available Text: MOTOROLA Order this document by MRF9060M/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices	Original	PDF	MRF9060M/D MRF9060MR1 MRF9060MBR1 DEVICEMRF9060M/D
93F2975 Abstract: Motorola 305 Text: MOTOROLA Order this document by MRF9060/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The high gain and broadband performance of these devices	Original	PDF	MRF9060/D MRF9060 MRF9060S MRF9060SR1 93F2975 Motorola 305
Untitled Abstract: No abstract text available Text: SD2900 RF & MICROWAVE TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs . . . . . . . GOLD METALLIZATION 2 - 5 0 0 MHz 5 WATTS 28 VOLTS 13.5 dB MIN. AT 400 MHz CLASS A OR AB OPERATION EXCELLENT THERMAL STABILITY DESCRIPTION The SD2900 is a gold metallized N-Channel MOS	OCR Scan	PDF	SD2900 SD2900 1021498C 1010936C

100B1R Search Results

100B1R Price and Stock

Kyocera AVX Components 100B1R5BW500XT1K

Kyocera AVX Components 100B1R0CW500XT1K

Kyocera AVX Components 100B1R8BW500XT1K

Kyocera AVX Components 100B1R2BT500XT1K

Kyocera AVX Components 100B1R0BT500XT1K

100B1R Datasheets (32)

100B1R Datasheets Context Search

Untitled

MRF9030MBR1

100B0R1BW

C1206C104KRAC7800

RM73B2B

A113

J294

ipc 9850

RF-35-0300

Untitled

Untitled

Untitled

C-XM-99-001-01

100B0R5BW

C8450

mrf5s21090

Untitled

100B201JT500XT

MW4IC2230NB

Untitled

Untitled

Untitled

93F2975

Untitled