Untitled
Abstract: No abstract text available
Text: STRH12P10ESY3 P-channel 100V - 0.265Ω - TO-257AA Rad-hard low gate charge STripFET Power MOSFET PRELIMINARY DATA General features Type VDSS STRH12P10ESY3 100V • Low RDS on ■ Fast switching ■ Single event effect (SEE) hardned ■ Low total gate charge
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STRH12P10ESY3
O-257AA
100kRad
34Mev/cm
O-257AA
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Untitled
Abstract: No abstract text available
Text: STRH40P10FSY3 P-channel 100V - 0.060Ω - TO-254AA Rad-hard low gate charge STripFET Power MOSFET PRELIMINARY DATA General features Type VDSS STRH40P10FSY3 100V • Low RDS on ■ Fast switching ■ Single event effect (SEE) hardned ■ Low total gate charge
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STRH40P10FSY3
O-254AA
100kRad
34Mev/cm
O-254AA
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PDF
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irf9520 p channel
Abstract: IRF9520
Text: IRF9520 Data Sheet July 1999 6A, 100V, 0.600 Ohm, P-Channel Power MOSFET • 6A, 100V • rDS ON = 0.600Ω • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance
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IRF9520
TA17501.
O-220AB
irf9520 p channel
IRF9520
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PDF
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IRFF9120
Abstract: No abstract text available
Text: IRFF9120 Data Sheet June 1999 4A, 100V, 0.60 Ohm, P-Channel Power MOSFET • 4A, 100V • rDS ON = 0.60Ω • Single Pulse Avalanche Energy Rated • SOA is Power-Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics Formerly developmental type TA17501.
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IRFF9120
TA17501.
IRFF9120
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PDF
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STRH12P10ESY1
Abstract: STRH12P10ESY3
Text: STRH12P10ESY3 P-channel 100V - 0.265Ω - TO-257AA Rad-hard low gate charge STripFET Power MOSFET General features Type VDSS STRH12P10ESY3 100V • Low RDS on ■ Fast switching ■ Single event effect (SEE) hardned ■ Low total gate charge ■ Light weight
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Original
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STRH12P10ESY3
O-257AA
100kRad
34Mev/cm
STRH12P10ESY1
STRH12P10ESY3
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PDF
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Untitled
Abstract: No abstract text available
Text: STRH40P10FSY3 P-channel 100V - 0.060Ω - TO-254AA Rad-hard low gate charge STripFET Power MOSFET Features Type VDSS STRH40P10FSY3 100V • Low RDS on ■ Fast switching ■ Single event effect (SEE) hardned ■ Low total gate charge 3 2 1 TO-254AA ■
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Original
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STRH40P10FSY3
O-254AA
100kRad
34Mev/cm
O-254AA
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PDF
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STRH40P10FSY3
Abstract: No abstract text available
Text: STRH40P10FSY3 P-channel 100V - 0.060Ω - TO-254AA Rad-hard low gate charge STripFET Power MOSFET General features Type VDSS STRH40P10FSY3 100V • Low RDS on ■ Fast switching ■ Single event effect (SEE) hardned ■ Low total gate charge 3 2 1 TO-254AA
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Original
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STRH40P10FSY3
O-254AA
100kRad
34Mev/cm
STRH40P10FSY3
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PDF
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sem 2105
Abstract: 2E12 FSL9110R4 JANSR2N7411 IC SEM 2105 sem 2106
Text: JANSR2N7411 Formerly FSL9110R4 2.5A, -100V, 1.30 Ohm, Rad Hard, P-Channel Power MOSFET June 1998 Features Description • 2.5A, -100V, rDS ON = 1.30Ω The Discrete Products Operation of Intersil Corporationhas developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event
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JANSR2N7411
FSL9110R4
-100V,
sem 2105
2E12
FSL9110R4
JANSR2N7411
IC SEM 2105
sem 2106
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PDF
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Untitled
Abstract: No abstract text available
Text: JANSR2N7411 Formerly FSL9110R4 2.5A, -100V, 1.30 Ohm, Rad Hard, P-Channel Power MOSFET January 2002 Features Description • 2.5A, -100V, rDS ON = 1.30Ω The Discrete Products Operation of Fairchild Corporationhas developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event
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JANSR2N7411
FSL9110R4
-100V,
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PDF
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2E12
Abstract: FSL9130D FSL9130D1 FSL9130D3 FSL9130R FSL9130R1
Text: FSL9130D, FSL9130R 5A, -100V, 0.680 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs June 1998 Features Description • 5A, -100V, rDS ON = 0.680Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event
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FSL9130D,
FSL9130R
-100V,
2E12
FSL9130D
FSL9130D1
FSL9130D3
FSL9130R
FSL9130R1
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PDF
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2E12
Abstract: FSS9130D FSS9130D1 FSS9130D3 FSS9130R FSS9130R1
Text: FSS9130D, FSS9130R 6A, -100V, 0.660 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs June 1998 Features Description • 6A, -100V, rDS ON = 0.660Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event
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FSS9130D,
FSS9130R
-100V,
2E12
FSS9130D
FSS9130D1
FSS9130D3
FSS9130R
FSS9130R1
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PDF
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FSF9150R4
Abstract: 2E12 JANSR2N7403
Text: JANSR2N7403 Formerly FSF9150R4 22A, -100V, 0.140 Ohm, Rad Hard, P-Channel Power MOSFET June 1998 Features Description • 22A, -100V, rDS ON = 0.140Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event
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JANSR2N7403
FSF9150R4
-100V,
FSF9150R4
2E12
JANSR2N7403
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PDF
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2E12
Abstract: FSJ9160D FSJ9160D1 FSJ9160D3 FSJ9160R FSJ9160R1 Rad Hard in Fairchild for MOSFET
Text: FSJ9160D, FSJ9160R 44A, -100V, 0.055 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs June 1998 Features Description • 44A, -100V, rDS ON = 0.055Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event
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FSJ9160D,
FSJ9160R
-100V,
2E12
FSJ9160D
FSJ9160D1
FSJ9160D3
FSJ9160R
FSJ9160R1
Rad Hard in Fairchild for MOSFET
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PDF
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2E12
Abstract: FSL9130D FSL9130D1 FSL9130D3 FSL9130R FSL9130R1
Text: FSL9130D, FSL9130R 5A, -100V, 0.680 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs June 1998 Features Description • 5A, -100V, rDS ON = 0.680Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event
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FSL9130D,
FSL9130R
-100V,
O-205AF
254mm)
FSL9130R
2E12
FSL9130D
FSL9130D1
FSL9130D3
FSL9130R1
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PDF
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2E12
Abstract: FSF9150D FSF9150D1 FSF9150D3 FSF9150R FSF9150R1
Text: FSF9150D, FSF9150R 22A, -100V, 0.140 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs June 1998 Features Description • 22A, -100V, rDS ON = 0.140Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event
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Original
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FSF9150D,
FSF9150R
-100V,
2E12
FSF9150D
FSF9150D1
FSF9150D3
FSF9150R
FSF9150R1
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PDF
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ic 4082 data sheet
Abstract: 2E12 FSS9130D FSS9130D1 FSS9130D3 FSS9130R FSS9130R1
Text: FSS9130D, FSS9130R 6A, -100V, 0.660 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs June 1998 Features Description • 6A, -100V, rDS ON = 0.660Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event
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Original
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FSS9130D,
FSS9130R
-100V,
ic 4082 data sheet
2E12
FSS9130D
FSS9130D1
FSS9130D3
FSS9130R
FSS9130R1
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PDF
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2E12
Abstract: FSJ9160D FSJ9160D1 FSJ9160D3 FSJ9160R FSJ9160R1
Text: FSJ9160D, FSJ9160R 44A, -100V, 0.055 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs June 1998 Features Description • 44A, -100V, rDS ON = 0.055Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event
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FSJ9160D,
FSJ9160R
-100V,
2E12
FSJ9160D
FSJ9160D1
FSJ9160D3
FSJ9160R
FSJ9160R1
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PDF
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Untitled
Abstract: No abstract text available
Text: Ordering number : EN*A2321 CPH3362 Advance Information http://onsemi.com P-Channel Power MOSFET -100V, -0.7A, 1.7Ω, Single CPH3 Features • On-resistance RDS on 1=1.3Ω(typ.) • 4V drive • Halogen free compliance Specifications Absolute Maximum Ratings at Ta = 25°C
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A2321
CPH3362
-100V,
900mm2Ã
A2321-5/5
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PDF
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Untitled
Abstract: No abstract text available
Text: STRH40P10FSY1 STRH40P10FSY3 P-channel 100V - 0.060Ω - TO-254AA Rad-hard low gate charge STripFET Power MOSFET Features Type VDSS STRH40P10FSY1 100 V STRH40P10FSY3 100 V • Low RDS on ■ Fast switching ■ Single event effect (SEE) hardned 3 2 1 TO-254AA
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STRH40P10FSY1
STRH40P10FSY3
O-254AA
34Mev/cm
O-254AA
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PDF
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STRH40P10FSY3
Abstract: JESD97 STRH40P10FSY1
Text: STRH40P10FSY1 STRH40P10FSY3 P-channel 100V - 0.060Ω - TO-254AA Rad-hard low gate charge STripFET Power MOSFET Features Type VDSS STRH40P10FSY1 100 V STRH40P10FSY3 100 V • Low RDS on ■ Fast switching ■ Single event effect (SEE) hardned 3 2 1 TO-254AA
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Original
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STRH40P10FSY1
STRH40P10FSY3
O-254AA
34Mev/cm
STRH40P10FSY3
JESD97
STRH40P10FSY1
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PDF
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TO-254AA Package
Abstract: FSF9150R4
Text: JANSR2N7403 ffî MASSES Formerly FSF9150R4 22A, -100V, 0.140 Ohm, Rad Hard, P-Channel Power MOSFET June 1998 Description Features • 22A, -100V, rDS 0 N = 0.140£i • Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si) • Single Event - Safe Operating Area Curve for Single Event Effects
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OCR Scan
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FSF9150R4
JANSR2N7403
-100V,
MIL-STD-750,
MIL-S-19500,
100ms;
500ms;
TO-254AA Package
FSF9150R4
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PDF
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Untitled
Abstract: No abstract text available
Text: IRFD9120 Semiconductor April 1999 Data Sheet -1.0A, -100V, 0.6 Ohm, P-Channel Power MOSFET • -1.0A ,-100V • r DS ON = ° - 6 i2 • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics
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OCR Scan
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IRFD9120
-100V,
-100V
TA17501.
TB334
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PDF
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Untitled
Abstract: No abstract text available
Text: ¡SttSfiSSS FSL9110D, FSL9110R Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs Description Features • 2.5A, -100V, rp s O N = 1.3012 • Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si) • Single Event - Safe Operating Area Curve for Single Event Effects
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OCR Scan
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FSL9110D,
FSL9110R
-100V,
36MeV/mg/cm2
1-800-4-HARRIS
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PDF
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5a 12v regula
Abstract: No abstract text available
Text: FSL9130D, FSL9130R HARRIS S E M I C O N D U C T O R 5A, -100V, 0.680 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs June 1998 Features • Description 5A, -100V, roS ON = 0,68012 • Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si) • Single Event
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OCR Scan
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FSL9130D,
FSL9130R
-100V,
MIL-S-19500,
MIL-STD-750,
100ms;
500ms;
5a 12v regula
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PDF
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