SOP 8 200MIL
Abstract: serial flash 256Mb fast erase spi TM 1628 IC SOP Micron 512MB NOR FLASH HN29V1G91T-30 HN58C1001FPI-15 M5M51008DFP-70HI 256mb EEPROM Memory CSP-48 TSOP 28 SPI memory Package flash
Text: Renesas Memory General Catalog 2003.11 Renesas Memory General Catalog Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with
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D-85622
REJ01C0001-0100Z
SOP 8 200MIL
serial flash 256Mb fast erase spi
TM 1628 IC SOP
Micron 512MB NOR FLASH
HN29V1G91T-30
HN58C1001FPI-15
M5M51008DFP-70HI
256mb EEPROM Memory
CSP-48
TSOP 28 SPI memory Package flash
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QFN36-P-0606-0
Abstract: TC32306FTG QFN36-P FC102 61012 b00111111 AUTOHD 5275S 5275u rf 315mhz
Text: TC32306FTG TOSHIBA CMOS Integrated Circuit Silicon Monolithic TC32306FTG Single-Chip RF Transceiver for Low-Power Systems 1. General Description The TC32306FTG is a single-chip RF transceiver, which provides many of the functions required for UHF-band transceiver applications. It has the most features transmiting and
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TC32306FTG
TC32306FTG
QFN36-P-0606-0
QFN36-P
FC102
61012
b00111111
AUTOHD
5275S
5275u
rf 315mhz
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324T
Abstract: 2MWx16bit
Text: ADVANCED INFORMATION MX69LW322/324T/B 32M-BIT [X8/X16] FLASH AND 2M-BIT/4M-BIT X8/X16 SRAM MIXED MULTI CHIP PACKAGE MEMORY FEATURES • Supply voltage range: 2.7V to 3.6V • Fast access time: Flash memory:70/90ns SRAM memory:70/85ns • Operation temperature range: -40 ~ 85°C
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MX69LW322/324T/B
32M-BIT
X8/X16]
X8/X16)
70/90ns
70/85ns
AuP44
APR/17/2002
APR/18/2002
MAY/31/2002
324T
2MWx16bit
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C000H-DFFFH
Abstract: 24Blocks FB0000h-FBFFFFh 9F0000h-9FFFFFh C10000h-C1FFFFh FF4000h-FF5FFFh 8a0000h8affffh
Text: ADVANCED INFORMATION MX29LW128T/B/U/D 128M-BIT [16M x 8 / 8M x 16] SINGLE VOLTAGE 3V ONLY PAGE MODE FLASH MEMORY FEATURES GENERAL • 8M word x 16 Bit /16M Byte x 8 Bit switchable Power Supply Voltage - VCC=2.7V to 3.6V for read, erase and program operation
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MX29LW128T/B/U/D
128M-BIT
JAN/27/2003
MAR/28/2003
MAY/16/2003
MAY/29/2003
C000H-DFFFH
24Blocks
FB0000h-FBFFFFh
9F0000h-9FFFFFh
C10000h-C1FFFFh
FF4000h-FF5FFFh
8a0000h8affffh
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BA RV
Abstract: code lock circuit A1D14 RV80
Text: MITSUBISHI LSIs MITSUBISHI LSIs M5M29FB/T800FP,VP,RV-80,-10,-12 M5M29FB/T800FP,VP,RV-80,-10,-12 8,388,608-BIT 1048,576-WORD 8-BIT / 524,288-WORD BY16-BIT 8,388,608-BIT (1048,576-WORD BYBY 8-BIT / 524,288-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY
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M5M29FB/T800FP
RV-80
608-BIT
576-WORD
288-WORD
BY16-BIT)
BA RV
code lock circuit
A1D14
RV80
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JS28F512M29
Abstract: js28f256m29 js28f256 JS28F512 pc28f00am29ew JS28F00AM29EW pc28f00am29 js28f00 PC28F00AM29EWHA JS28F256M29EWL
Text: Numonyx Axcell™ M29EW Datasheet 256-Mbit, 512-Mbit, 1-Gbit, 2-Gbit x8/x16, uniform block 3 V supply flash memory Features Supply voltage — VCC = 2.7 to 3.6 V for Program, Erase and Read — VCCQ = 1.65 to 3.6 V for I/O buffers
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M29EW
256-Mbit,
512-Mbit,
x8/x16,
100ns
512-word
14MB/s)
Kbytes/64
PC28F00AM29EWHA
11-Apr-2011
JS28F512M29
js28f256m29
js28f256
JS28F512
pc28f00am29ew
JS28F00AM29EW
pc28f00am29
js28f00
PC28F00AM29EWHA
JS28F256M29EWL
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Untitled
Abstract: No abstract text available
Text: EN29LV160C EN29LV160C 16 Megabit 2048K x 8-bit / 1024K x 16-bit Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only FEATURES • 3.0V, single power supply operation - Minimizes system level power requirements • High performance - Access times as fast as 70 ns
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EN29LV160C
2048K
1024K
16-bit)
16-Kbyte,
32-Kbyte,
64-Kbyte
16-Kword
32-Kword
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BA258
Abstract: ba146 BA148 ba198 BA204
Text: K8S2815ET B B NOR FLASH MEMORY 128Mb B-die SLC NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,
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K8S2815ET
128Mb
00003FH
00007FH
0000BFH
000000H
44-Ball
BA258
ba146
BA148
ba198
BA204
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BA379
Abstract: BA377 BA339 BA438 BA429 BA416 ba-302 BA512 BA308 ba324
Text: K8A5615ET B A NOR FLASH MEMORY Document Title 256M Bit (16M x16) Synchronous Burst , Multi Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Advanced March 15, 2004 Advance 0.1 Revision - Change the speed code 7B : 90ns @54MHz -> 7B : 88.5ns @54MHz
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K8A5615ET
54MHz
22ECH
22FCH
22EDH
22FDH
K8A56156ET
70ns---
BA379
BA377
BA339
BA438
BA429
BA416
ba-302
BA512
BA308
ba324
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI LSIs MITSUBISHI LSIs M5M29FB/T800FP,VP,RV-80,-10,-12 M5M29FB/T800FP,VP,RV-80,-10,-12 8,388,608-BIT 1048,576-WORD 8-BIT / 524,288-WORD BY16-BIT 8,388,608-BIT (1048,576-WORD BYBY 8-BIT / 524,288-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY
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M5M29FB/T800FP
RV-80
608-BIT
576-WORD
288-WORD
BY16-BIT)
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Untitled
Abstract: No abstract text available
Text: MCM28F256ACH MCM28F256ACH 256-Mbit 32-Mbit x 8, 16-Mbit x 16 Flash Memory Module with Internal Decoding and Boundary Scan I/O Buffers Literature Number: SNOS764A July 1995 MCM28F256ACH 256-Mbit (32-Mbit x 8 16-Mbit x 16) Flash Memory Module with Internal Decoding and Boundary Scan I O Buffers
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MCM28F256ACH
MCM28F256ACH
256-Mbit
32-Mbit
16-Mbit
SNOS764A
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BA100 diode
Abstract: BA102 ba107 Samsung MCP BA125 Diode diode ba102 BA134 BA100 BA106
Text: Advance Information MCP MEMORY K5C6481NT B M Document Title Multi-Chip Package MEMORY 64M Bit (4Mx16) Dual Bank NOR Flash Memory / 8M(512Kx16) Full CMOS SRAM Revision History Revision No. History 0.0 Advance Information Draft Date Remark Sep. 7, 2001 Advance
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K5C6481NT
4Mx16)
512Kx16)
512Kx10
81-Ball
80x11
BA100 diode
BA102
ba107
Samsung MCP
BA125 Diode
diode ba102
BA134
BA100
BA106
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RTS5158
Abstract: northbridge G41 se u10i layout GM965 28K1 IC NS0013 sla5t bga676 rtl8010 C1087
Text: A B C D E X'TAL 14.318MHz Merom Processor System Power Rail Management Dual-Core CLOCK GEN ICS9LPR358AGLFT uFCPGA 478 2 3,4 FSB (667/800 MHz) FSB 4 GM965/PM965 ATI M74M USB 1 LVDS ＊V ＊VS HIGH HIGH ON ON ON ON S3 (Suspend to RAM) LOW HIGH HIGH HIGH ON
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318MHz
ICS9LPR358AGLFT
GM965/PM965
965GM
965PM
512MB
3B817
2R1066
74U23
76U23
RTS5158
northbridge G41
se u10i layout
GM965
28K1
IC NS0013
sla5t
bga676
rtl8010
C1087
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Untitled
Abstract: No abstract text available
Text: MBM29LV652UE90 Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and Fujitsu.
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MBM29LV652UE90
F0305
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EN29LV160CT
Abstract: EN29LV160CB en29lv160c
Text: EN29LV160C EN29LV160C 16 Megabit 2048K x 8-bit / 1024K x 16-bit Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only FEATURES • 3.0V, single power supply operation - Minimizes system level power requirements • High performance - Access times as fast as 70 ns
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EN29LV160C
2048K
1024K
16-bit)
100ms
48-Ball
EN29LV160CT
EN29LV160CB
en29lv160c
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k 1358
Abstract: 56FBGA
Text: 32 Mbit Burst Mode Concurrent SuperFlash ComboMemory SST34WA32A3 / SST34WA32A4 / SST34WA3283 / SST34WA3284 Advance Information FEATURES: • Flash Organization: – 2M x 16 • PSRAM Organization: – 8 Mbit: 512k X 16 – 16 Mbit: 1M x 16 • Single Voltage Read and Write Operations
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SST34WA32A3
SST34WA32A4
SST34WA3283
SST34WA3284
SST34WA32x3
SST34WA32x4
MO-225,
56-fbga-MVN-6x8-1
56-Ball
S71358-01-000
k 1358
56FBGA
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Untitled
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20886-1E FLASH MEMORY CMOS 64M 4M x 16 BIT MBM29LV652UE -90/12 • GENERAL DESCRIPTION The MBM29LV652UE is a 64M-bit, 3.0 V-only Flash memory organized as 4M words of 16 bits each. The device is designed to MBM29LV652UEbe programmed in system with the standard system 3.0 V VCC supply. 12.0 V VPP
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DS05-20886-1E
MBM29LV652UE
64M-bit,
MBM29LV652UEbe
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Multi Chip Memory
Abstract: No abstract text available
Text: ADVANCED INFORMATION MX69LW3221/3241T/B 32M-BIT [X16] FLASH AND 2M-BIT/4M-BIT [X16] SRAM MIXED MULTI CHIP PACKAGE MEMORY FEATURES • Supply voltage range: 2.7V to 3.6V • Fast access time: Flash memory:70/90ns SRAM memory:70/85ns • Operation temperature range: -40 ~ 85°C
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MX69LW3221/3241T/B
32M-BIT
70/90ns
70/85ns
66-Ball
PM0924
Multi Chip Memory
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7be0
Abstract: No abstract text available
Text: Numonyx Axcell™ M29EW Datasheet 256-Mbit, 512-Mbit, 1-Gbit, 2-Gbit x8/x16, uniform block 3 V supply flash memory Features Supply voltage — VCC = 2.7 to 3.6 V for Program, Erase and Read — VCCQ = 1.65 to 3.6 V for I/O buffers
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M29EW
256-Mbit,
512-Mbit,
x8/x16,
100ns
512-word
48MB/s)
Kbytes/64
7be0
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PDF
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Untitled
Abstract: No abstract text available
Text: . New Data File Number CD54/74HC7030 CD54/74HCT7030 2122 HARRIS SEMICOND SECTOR 27E D E3 4302271 0016145 0 Hi H AS T -lC t-S S -M 5 ooT p u t 64-Word x 9-Bit FIFO Register; 3-State Type Features: -Q 0 DATA-OUT “ READY _ DATA-IN READY 92 C S - 4 2 6 6 0 FUNCTIONAL DIAGRAM
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OCR Scan
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CD54/74HC7030
CD54/74HCT7030
64-Word
25-MHz
40-MHz
TDC1030
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74HC7030
Abstract: No abstract text available
Text: HARRIS Œ SEMI CON D U CT OR CD54/74HC7030 CD54/74HCT7030 June 1998 64-Word x 9-Bit FIFO Register; 3-State Type Features: - 08 DATA-OUT "R E A D Y _ DATA-IN READY MASTER Re s e t 92 CS- 42 66 0 FUNCTIONAL DIAGRAM • Synchronous or asynchronous operation ■ 3-state outputs standard
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OCR Scan
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CD54/74HC7030
CD54/74HCT7030
64-Word
25-MHz
40-MHz
TDC1030
CD54HC/HCT703h
74HC7030
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Untitled
Abstract: No abstract text available
Text: New Data File N um ber 2122 CD54/74HC7030 CD54/74HCT7030 64-Word x 9-Bit FIFO Register; 3-State Type Features: 92CS-42860 FUNCTIONAL DIAGRAM • S ynchronou s o r asynchronous o peration ■ 3-state ou tputs standard ■ M a ster-reset in p u ts to clear data
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CD54/74HC7030
CD54/74HCT7030
64-Word
92CS-42860
T7030
128th
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BR9020RFV-W
Abstract: D14D BR9020 BR9020F BR9020FV-W BR9020-W tcs m1
Text: 128 x 16 bit Electrically Erasable Programmable Rom B R 9 0 2 0 / F / 'F V / R F V / 'R F V M - W The BR9020-W series are serial EEPROMs that can be connected directly to a serial port and can be erased and written electrically. Writing and reading is perfomed in word units, using four types of operation commands. Communication
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BR9020/F
BR9020-W
128words
16bit
BR9020RFV-W
D14D
BR9020
BR9020F
BR9020FV-W
tcs m1
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI LSIs M5M29KBT800AVP P U E U M W A R Y 8,388,608-BIT 1048,576-WORD BY 8-BIT / 524,288-WORD BY16-BIT _ CMOS 5.0V-ONLY. BLOCK ERASE FLASH MEMORY Noti S o rn B T ’ DESCRIPTION The M ITSUBISHI Mobile FLASH M 5M 29KB/T800AVP is 5.0V-only high speed 8,388,608-bit CM OS boot block Flash Mem ories with
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M5M29KBT800AVP
608-BIT
576-WORD
288-WORD
BY16-BIT)
29KB/T800AVP
608-bit
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