crouzet octal timer
Abstract: Crouzet Timer 814 Crouzet 88826103 crouzet TIMER WM1784-ND 87610150 crouzet repeat cycle timer Crouzet 814 timer 87610340 crouzet timer multifunction timer
Text: NEW! Analog Timer Controls Couzet’s Chronos series of timers are their newest timers with improved features such as greater accuracy, LED status indicator, 3 wire sensor control option and a heavy duty 10A relay. Perfect for all delay-on/off functions as well as Interval timing, repetitive cycle timing and remote triggered sequence timing. All timers are cUL and CE approved.
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co1048150D100230A
700LN001N48150D100230A
701LN001N1248D
700LN001N1248D2060A
701SR601048150D100230A
701PR-102
701PR-112
703PR-102
703PR-112
906D36HGA
crouzet octal timer
Crouzet Timer 814
Crouzet 88826103
crouzet TIMER
WM1784-ND
87610150
crouzet repeat cycle timer
Crouzet 814 timer
87610340
crouzet timer multifunction timer
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marking codes fairchild
Abstract: NM27C256N J28AQ FAIRCHILD SEMICONDUCTOR PRODUCT MARKING CODES J24AQ J28CQ N40A V44A VA32A J40BQ
Text: Non-Volatile Memory - EPROM Physical Dimensions Contents Tape and Reel . 2 Part Marking . 3 Package Outlines J24AQ . 4
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J24AQ
J28AQ
J28CQ
J32AQ
J40BQ
MBS28A
marking codes fairchild
NM27C256N
J28AQ
FAIRCHILD SEMICONDUCTOR PRODUCT MARKING CODES
J24AQ
J28CQ
N40A
V44A
VA32A
J40BQ
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691102710002
Abstract: 4 pin optocoupler 12v INFINEON application note
Text: AN- EVAL- 3 RBR06 65 JZ BDTIC 30W 12V SMPS e va l uat ion boar d wit h I CE3RB R0665J Z Appl icat ion Not e AN - EVAL- 3RB R0665JZ V1. 0 , 2014- 07- 22 Po wer Manag em ent & Mult im ar k et www.BDTIC.com/infineon BDTIC Edition 2014-07-22 Published by Infineon Technologies AG,
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RBR06
R0665J
R0665JZ
ICE3RBR0665JZ
DSO-16/12)
AN-EVAL-3RBR0665JZ
691102710002
4 pin optocoupler 12v
INFINEON application note
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LBT35007
Abstract: No abstract text available
Text: 350MHz SAW Filter 11MHz Bandwidth China Electronics Technology Group Corporation No.26 Research Institute SIPAT Co., Ltd. Part Number: LBT35007 www.sipatsaw.com Features For RF SAW filter Single-ended operation Ceramic Surface Mount Package Small size
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350MHz
11MHz
LBT35007
2002/95/EC)
10deg/Div
LBT35007
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Untitled
Abstract: No abstract text available
Text: Mini-Circuits - Specification for Power Splitter - ZAPD-ED10572/1 Power Splitter Notes: • For Surface Mount Environmental Specifications, please click here. Re-flow soldering information is available in "Surface Mount" article. • case style outline drawing: 99-01-916
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ZAPD-ED10572/1
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Untitled
Abstract: No abstract text available
Text: EGN26C105I2D GaN-HEMT 105W High Voltage - High Power GaN-HEMT FEATURES High Voltage Operation : VDS=50V High Power : 50.3dBm typ. @ Psat High Efficiency: 65%(typ.) @ Psat Power Gain : 17dB(typ.) @ f=2.6GHz Proven Reliability DESCRIPTION SEDI's GaN-HEMT offers high efficiency, ease of matching, greater
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EGN26C105I2D
25deg
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93c46ln
Abstract: 93s46 eprom marking codes fairchild 24U02 93S46 eeprom FAIRCHILD SEMICONDUCTOR PRODUCT MARKING CODES F46L 24C02 code example assembly 93S46 24C02LN
Text: Non-Volatile Memory - EEPROM Physical Dimensions Contents Tape and Reel . 2 Part Marking . 3 Package Outlines M08A .
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MTC08
VBH48A
VEH64A
93c46ln
93s46 eprom
marking codes fairchild
24U02
93S46 eeprom
FAIRCHILD SEMICONDUCTOR PRODUCT MARKING CODES
F46L
24C02 code example assembly
93S46
24C02LN
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PS0SXDS60
Abstract: IEC 352-2 6J4 CORCOM corcom 6J4 PS0S0SS60 1060-090 PE0S0SS30 corcom 6vj1
Text: 855-2012:QuarkCatalogTempNew 8/27/12 8:57 AM Page 855 8 Power Entry Modules RoHS 6 Amps; 100-240 Volts AC, 50-60 Hz Mounting Diagram Recommended Panel Cutout Note: Specify line cord GA400 below to mate with IEC connector. 6VJ1/6J4 6VJ1 6VJ1 INTERCONNECT
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GA400
PS0SXDS60
IEC 352-2
6J4 CORCOM
corcom 6J4
PS0S0SS60
1060-090
PE0S0SS30
corcom 6vj1
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A4436
Abstract: transistor a684
Text: H Avantek Products Surface Mount Cascadable Amplifier 2 to 18 GHz Technical Data PPA-18222 Features Description Pin Configuration • Small Surface Mount Package: 0.25 in. x 0.25 in. PP-25 • GaAs MMIC Technology The PPA-18222 is an extremely wideband two stage MMIC
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PPA-18222
PP-25
PPA-18222
5963-3232E.
5963-2591E
A4436
transistor a684
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HDR2X3, header
Abstract: HDR1X2 CC3216-1206 CC2012 CC3216 polarized capacitor HDR2X3 smt-induct capacitor 100nf 50v 0805 CC3225-1210
Text: ๑ᆩኸళ āāሞཌ၍ഗJP4ࢅJP2ฉ૬༹ᅼೕ႑ࡽăݴ՚ॽᇸ āāॽI2C႑ࡽ݀ิഗࢅথ੨ۉୟӱথऺ໙ऐڦժႜ ႑ࡽࢅথ܋ںᆌᆩ"IN1"ᆅগࢅ"GND"ᆅগă ܋੨ă āāሞJP5ฉڦᆅগኮक़থᅃ߲ሜDŽĽ8ˮDžLjሞ
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LM4681
LM4681
AN-1488
AN201959
HDR2X3, header
HDR1X2
CC3216-1206
CC2012
CC3216
polarized capacitor
HDR2X3
smt-induct
capacitor 100nf 50v 0805
CC3225-1210
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transistor RFP25N05
Abstract: AN7254 AN7260 AN9321 AN9322 RFP25N05
Text: RFP25N05 S E M I C O N D U C T O R 25A, 50V, Avalanche Rated N-Channel Enhancement-Mode Power MOSFET MegaFET April 1995 Features Packaging • 25A, 50V JEDEC TO-220AB • rDS(ON) = 0.047Ω SOURCE DRAIN GATE • Temperature Compensating PSPICE Model • Peak Current vs Pulse Width Curve
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RFP25N05
O-220AB
175oC
RFP25N05
1-800-4-HARRIS
transistor RFP25N05
AN7254
AN7260
AN9321
AN9322
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10UF
Abstract: CGH35015 CGH35015F CGH35015-TB molex 5238
Text: CGH35015 15 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH35015 is a gallium nitride GaN high electron mobility transistor designed specifically for 802.16-2004 WiMAX Fixed Access applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities,
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CGH35015
CGH35015
CGH3501
35015P
12product
10UF
CGH35015F
CGH35015-TB
molex 5238
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY CGH55015 15 W, 5500-5800 MHz, GaN HEMT for WiMAX Cree’s CGH55015 is a gallium nitride GaN high electron mobility transistor designed specifically for 802.16-2004 WiMAX Fixed Access applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities,
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CGH55015
CGH55015
CGH5501
CGH55015F
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10 awg twh
Abstract: diagram 3 phase heater LCD TV backlight power inverter 650C LC050 RS170
Text: White Electronic Designs Display Systems Division 199-0009-00 AMLCD PRODUCT - MODEL LC050 Ruggedized 5.0" Display Head Assembly 320 x 234 OVERVIEW White Electronic Designs’ 5.0” sunlight readable display head assembly with backlight is ruggedized for harsh
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LC050
-400C
2000Hz,
91grms.
15-30Hz,
30-35Hz
35-2000Hz,
16grms.
Mil-STD-81OE,
10 awg twh
diagram 3 phase heater
LCD TV backlight power inverter
650C
LC050
RS170
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2312 footprint dimension
Abstract: No abstract text available
Text: AG603-89G InGaP HBT Gain Block Applications • • • • Mobile Infrastructure CATV / FTTX W-LAN / ISM WCDMA / LTE 3G 60 AG SOT-89 Package Product Features • • • • • • • Functional Block Diagram DC – 3000 MHz +19.5 dBm P1dB at 900 MHz +33 dBm OIP3 at 900 MHz
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AG603-89G
OT-89
AG603-89
2312 footprint dimension
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Untitled
Abstract: No abstract text available
Text: AG603-89G InGaP HBT Gain Block Applications • • • • Mobile Infrastructure CATV / FTTX W-LAN / ISM WCDMA / LTE 3G 60 AG SOT-89 Package Product Features • • • • • • • Functional Block Diagram DC – 3000 MHz +19.5 dBm P1dB at 900 MHz +33 dBm OIP3 at 900 MHz
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AG603-89G
OT-89
AG603-89G
AG603-89
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Untitled
Abstract: No abstract text available
Text: CGHV1J006D 6 W, 18.0 GHz, GaN HEMT Die Cree’s CGHV1J006D is a high voltage gallium nitride GaN High Electron Mobility Transistor (HEMT) on a silicon carbide substrate, using a 0.25 m gate length fabrication process. This GaN-on-SiC product offers superior high
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CGHV1J006D
CGHV1J006D
18GHz
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CGHV1J006D
Abstract: transistor j813 G40V4 hemt .s2p B 1318 191986 high power transistor s-parameters cree gate resistor
Text: CGHV1J006D 6 W, 18.0 GHz, GaN HEMT Die Cree’s CGHV1J006D is a high voltage gallium nitride GaN High Electron Mobility Transistor (HEMT) on a silicon carbide substrate, using a 0.25 m gate length fabrication process. This GaN-on-SiC product offers superior high
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CGHV1J006D
CGHV1J006D
18GHz
E7703
transistor j813
G40V4
hemt .s2p
B 1318
191986
high power transistor s-parameters
cree gate resistor
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CC2012-0805
Abstract: CC3216-1206 CC3225-1210 cc4532-1812 HDR1X2 100uF polarized capacitor polarized capacitor HDR2X3, header CC3225 AN-1187
Text: National Semiconductor Application Note 1488 Kevin Hoskins May 2006 Quick Start Guide Connect a load ≥ 8Ω between the pins on JP5 and another load between the pins on JP3. Apply power. Make measurements. Plug in a pair of headphones. Enjoy. 2 Connect the I C signal generation and interface board to a
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LM4681
ver11.
CSP-9-111S2)
AN-1488
CC2012-0805
CC3216-1206
CC3225-1210
cc4532-1812
HDR1X2
100uF polarized capacitor
polarized capacitor
HDR2X3, header
CC3225
AN-1187
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CGH40035FE
Abstract: STR 17006 str g 5551 cree 3535 10UF 470PF CGH4003 CGH40035 CGH40035F str 765 RT
Text: PRELIMINARY CGH40035 35 W, RF Power GaN HEMT Cree’s CGH40035 is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40035, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and
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CGH40035
CGH40035
CGH40035,
CGH4003
CGH40035FE
STR 17006
str g 5551
cree 3535
10UF
470PF
CGH4003
CGH40035F
str 765 RT
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Untitled
Abstract: No abstract text available
Text: TQP3M9037 Ultra Low Noise, High Linearity LNA Applications • • • • • Repeaters Mobile Infrastructure LTE / WCDMA / CDMA / GSM General Purpose Wireless TDD or FDD systems 8 pin 2x2 mm DFN Package Product Features • • • • • • • • •
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TQP3M9037
TQP3M9036
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STR W 5753 a
Abstract: CGH40010 str 5753 str w 5753 8891 8952 Cree Microwave 10UF 470PF CGH40010F
Text: CGH40010 10 W, RF Power GaN HEMT Cree’s CGH40010 is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40010, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer
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CGH40010
CGH40010
CGH40010,
CGH40
40010P
STR W 5753 a
str 5753
str w 5753
8891
8952
Cree Microwave
10UF
470PF
CGH40010F
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lm 3254
Abstract: ICA1009 11293
Text: u u lÌ ICA1009 2.0 to 11.0 GHz GaAs MMIC AMPLIFIER ♦ ♦ ♦ ♦ ♦ ♦ IDEAL FOR BUFFER, DRIVER, AND GAIN BLOCK APPLICATIONS SINGLE POWER SUPPLY: +5V BROADBAND PERFORMANCE ON-CHIP BIAS NETWORK 100% ON-WAFER RF-TESTED SELECTABLE BIAS OPTIONS IC A 1009 Chip Outline
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ICA1009
J1-4401
lm 3254
ICA1009
11293
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Untitled
Abstract: No abstract text available
Text: ICA1009 m 2.0 to 11.0 GHz GaAs MMIC AMPLIFIER ♦ ♦ ♦ ♦ ♦ ♦ m I•' j□# h I 1 I IDEAL FOR BUFFER, DRIVER, AND GAIN BLOCK APPLICATIONS SINGLE POWER SUPPLY: +5V BROADBAND PERFORMANCE ON-CHIP BIAS NETWORK 100% ON-WAFER RF-TESTED SELECTABLE BIAS OPTIONS
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ICA1009
ICA1009
J1-4401
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