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    2060 TRANSISTOR Search Results

    2060 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    2060 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Apogee

    Abstract: EB-2060X EB-2060 transistor subwoofer circuit diagram OMRON 1230 volume potentiometer 1k ohm subwoofer PREAMP circuit diagram C41 CENTRALAB CT622LY SMD electrolytic capacitor 100uF 63V
    Text: EB-2060x DDX All-Digital, High Efficiency Evaluation Amplifier GENERAL DESCRIPTION FEATURES The EB-2060x is an evaluation amplifier that showcases Apogee’s all-digital, high efficiency Direct Digital Amplification DDX technology. The board features a DDX-2000 Controller and DDX-2060


    Original     		PDF EB-2060x EB-2060x DDX-2000 DDX-2060 DDX-2000/2060 Apogee EB-2060 transistor subwoofer circuit diagram OMRON 1230 volume potentiometer 1k ohm subwoofer PREAMP circuit diagram C41 CENTRALAB CT622LY SMD electrolytic capacitor 100uF 63V

    Untitled

    Abstract: No abstract text available
    Text: High Efficient Topologies for Next Generation Solar Inverter July 2008, Michael Frisch, Vincotech GmbH, Finsinger Feld 1, 82551 Ottobrunn Germany Temesi Ernö, Vincotech Kft., Kossuth Lajos u. 59, H-2060 Bicske (Hungary) Efficiency is becoming increasingly important in power electronics. In many applications,


    Original     		PDF H-2060

    Ericsson PBC 6200

    Abstract: ericsson PBC 6500 NTP 7513 pbc 05 ericsson 74LSO4 LM356 LM356 IC circuit diagram TE 555-1 ntp 3200 ic digital amplifier PEB 2050 N V2.2
    Text: ICs for Communications Signal Processing Codec Filter SICOFI , SICOFI®-2 User’s Manual 03.92 PEB 2060; PEB 2260 Revision History: Original Version 03.92 Previous Releases: Page Subjects changes since last revision Edition 03.92 This edition was realized using the software system FrameMaker.


    Original     		PDF D-8000 Ericsson PBC 6200 ericsson PBC 6500 NTP 7513 pbc 05 ericsson 74LSO4 LM356 LM356 IC circuit diagram TE 555-1 ntp 3200 ic digital amplifier PEB 2050 N V2.2

    Untitled

    Abstract: No abstract text available
    Text: Advantages of NPC Inverter Topologies with Power Modules Michael Frisch, Vincotech GmbH, Biberger Str. 93, 82008 Unterhaching Germany Temesi Ernö, Vincotech Kft., Kossuth Lajos u. 59, H-2060 Bicske (Hungary) Efficiency is becoming increasingly important in power electronics. Many applications are driven by the


    Original     		PDF H-2060 1080kVA

    Untitled

    Abstract: No abstract text available
    Text: Power Module with Additional Low Inductive Current Path Michael Frisch, Vincotech GmbH, Biberger Str. 93, 82008 Unterhaching Germany Temesi Ernö, Vincotech Kft., Kossuth Lajos u. 59, H-2060 Bicske (Hungary) 1 Abstract Parasitic inductances are a major problem with power modules, in particular in fast switching


    Original     		PDF H-2060

    Untitled

    Abstract: No abstract text available
    Text: Advantages of NPC Inverter Topologies with Power Modules July 2009, Michael Frisch, Vincotech GmbH, Biberger Str. 93, 82008 Unterhaching Germany Temesi Ernö, Vincotech Kft., Kossuth Lajos u. 59, H-2060 Bicske (Hungary) Efficiency is becoming increasingly important in power electronics. In many applications are running


    Original     		PDF H-2060 720kVA 900kVA 1080kVA

    Apogee

    Abstract: 2060 DDX-2060 DDX2060 DDX-2000 24v Audio amplifier class d 24v Audio amplifier class d single supply 24v up Audio amplifier 2x35W diode e 2060
    Text: DDX-2000/2060 All-Digital High Efficiency Power Amplifier GENERAL DESCRIPTION FEATURES • HIGH OUTPUT CAPABILITY 2x35W into 8 Ω @ <1% THD+N 1x70W into 4 Ω @ <1% THD+N • SINGLE SUPPLY +9V to +30V • HIGH EFFICIENCY, >88% • DIGITAL VOLUME CONTROL, ANTICLIPPING AND AUTOMATIC MUTE


    Original     		PDF DDX-2000/2060 2x35W 1x70W DDX-2000 DDX-2060 Apogee 2060 DDX2060 24v Audio amplifier class d 24v Audio amplifier class d single supply 24v up Audio amplifier diode e 2060

    Untitled

    Abstract: No abstract text available
    Text: Design Concept for a Transformerless Solar Inverter Dec. 2009, Michael Frisch, Vincotech GmbH, Biberger Str. 93, 82008 Unterhaching Germany Temesi Ernö, Vincotech Kft., Kossuth Lajos u. 59, H-2060 Bicske (Hungary) Vincotech is able to offer a wide spectrum of power modules for solar applications. In the following we


    Original     		PDF H-2060 FZ06BIA045FH FZ06BIA045FH02.

    DDX-2060

    Abstract: DDX2060 car class d audio 50W DDX-8000 ddx-4100a DDX-4100 100w Mono CLASS D amplifier diagram 2060 data sheet DDX-2000 100 100w stereo amplifier
    Text: DDX-2060 All-Digital High Efficiency Power Amplifier FEATURES • HIGH OUTPUT CAPABILITY • 2 x 35W into 8Ω or 1 x 70W into 4Ω @ <1% THD • 2 x 50W into 8Ω or 1 x 100W into 4Ω @ 10% THD • SINGLE SUPPLY +9V to +30V • COMPACT SURFACE MOUNT PACKAGE


    Original     		PDF DDX-2060 DDX-2060 Rev09 DDX2060 car class d audio 50W DDX-8000 ddx-4100a DDX-4100 100w Mono CLASS D amplifier diagram 2060 data sheet DDX-2000 100 100w stereo amplifier

    2SC2060

    Abstract: E8 55A TO-92MOD
    Text: TO-92MOD Plastic-Encapsulate Transistors 2S C 2060 TRANSISTO R NPN F E AT U RES Power dissipation TO-92MOD P cm : C ollector current 1 .EMITTER Icm: 2 .COLLECTOR I 1A C ollector-base voltage 3 .BASE I 0.75W (Tamb=25°C) V ( br )c b o : 40 V O perating and storage jun ction tem perature range


    OCR Scan     		PDF O-92MOD 2SC2060 O-92MOD E8 55A TO-92MOD

    HA911

    Abstract: lh002 HA-911 MA702 CD4046 MC1554 HA-2500 HA-2510 HA-2512 HA-2522
    Text: BURN-IN CIRCUITS HA-909 HA-909, HA-2500, HA-2502, HA-2510, HA-2512, HA-2520, HA-2522, HA-2600, HA-2602, HA-2620, HA-2622, HA-2050, HA-2050A, HA-2060, HA-2060A H <a "1 TO-99 3 j— N OTES: T a = +125°C R- = 1 M e g o h m C-] = 0.01 jUF, 1 0 0 V HA-2000 NOTES:


    OCR Scan     		PDF HA-909 HA-909, HA-2500, HA-2502, HA-2510, HA-2512, HA-2520, HA-2522, HA-2600, HA-2602, HA911 lh002 HA-911 MA702 CD4046 MC1554 HA-2500 HA-2510 HA-2512 HA-2522

    Untitled

    Abstract: No abstract text available
    Text: APTEK T E C H / A P T E K MICROSYS 5SE D • //eicapteKop^ ¿ a p te k aptey^ ÜÔ'ÎSITb 0 0 0 0 M Ô 3 f laptekaptek api* a p t e k t e c h n o l o g i e s , i n c . aptek <*jr V fi ■ A M S 2060 Active Termination Interface Circuit 1 J PRELIMINARY DESCRIPTION


    OCR Scan     		PDF 671-BO01

    AT 2005A

    Abstract: HA-2000A fet preamp HA-2500 HA-2502 HA-2510 HA-2512 HA-2520 HA-2522 HA-200-5
    Text: BURN-IN CIRCUITS HA-909 HA-909, H A-2500, HA-2502, HA-2510, HA-2512, H A-2520, HA-2522, HA-2600, HA-2602, HA-2620, H A-2622, HA -2050, HA-2050A , HA-2060, HA-2060A H <a "1 TO-99 3 j— NOTES: T a = + 1 2 5 °C R- = 1 M e g o h m C-] = 0 .0 1 jU F , 1 0 0 V


    OCR Scan     		PDF HA-909 HA-909, HA-2500, HA-2502, HA-2510, HA-2512, HA-2520, HA-2522, HA-2600, HA-2602, AT 2005A HA-2000A fet preamp HA-2500 HA-2502 HA-2510 HA-2512 HA-2520 HA-2522 HA-200-5

    AT 2005A

    Abstract: 106 25K 011 HA-2000 HA-2000A HA-2050A HA-2060 HA-2060A HA-2500 HA-2502 HA-2510
    Text: HARRIS OPERATIONAL AMPLIFIERS Selection Guide for M ilita ry Applications -55°C to +125°C PARAM ETER* F.E.T. PR EA M P HA-2000 HA-2000A HA-205O HA-909 ?r a m HA-2060A HA-2400 HA-2050A HA-2060 S/H HA-2420 HA-2500 HA-2502 HA-2510 HA-2512 UNITS INPUT C H A R A C T E R IST IC S


    OCR Scan     		PDF HA-909 HA-205O HA-2050A HA-2060 HA-2060A HA-2500 HA-2502 HA-2510 HA-2512 HA-2000 AT 2005A 106 25K 011 HA-2000A HA-2060A

    2n555

    Abstract: No abstract text available
    Text: GERMANIUM POWER TRANSISTORS Type Number Case Type Ycbo V Yceo V VCE, V yc.o y VCE, V Min. CURRENT C A IN Hfe Yce @ Ic Max. V A SA TURA TION VOL TA GES y Cf * y SF(|) /c @ y y A A 9j-c aC /W 3 AMP GERMANIUM PNP CA2D2 2N155 2N176 2N235A 2N236A MT-36 TO-3 TO-3


    OCR Scan     		PDF 2N155 2N176 2N235A 2N236A MT-36 2N236B 2N242 2N255 2N256 2N268 2n555

    LS 74151

    Abstract: 2N555 MT27 220 hfk 2N176 Germanium Power Devices MT-27 2N2553 2N297A 2N155
    Text: GERMANIUM POWER TRANSISTORS Type Number Case Type Ycbo V Yceo V yc.o CA2D2 2N155 2N176 2N235A 2N236A 2N236B 2N242 2N255 2N256 2N268 2N285A 2N285B 2N297A 2N375 2N392 2N399 2N538 2N538A 2N539 2N539A 2N540 2N540A 2N554 2N555 2N618 2N1359 2N1360 2N1362 2N1363


    OCR Scan     		PDF MT-36 2N155 2N176 2N235A 2N236A 2N236B 2N242 2N255 2N256 2N268 LS 74151 2N555 MT27 220 hfk Germanium Power Devices MT-27 2N2553 2N297A

    2N3214

    Abstract: TO37 2N2283 2N2282 TO13 diode e 2060 MT28 2n1755 2N1043 2N1044
    Text: DIODE TRANSISTOR CO INC "ai 28483 52 DIODE T R A N S I S T O R CO INC DE~|efli|fl35E O O D D i n 0 I " 84D 00119 D T- J 5- o7 D1QDE TPidf\15J5TQPi CO., INC. 201 686-0400 • Telex: 139-385 • Outside NY & NJ area call TOLL FREE 800-526-4581 FAX No. 201*575-5883


    OCR Scan     		PDF afl4fl352 DDD0111 TMI\I515T0R Tc-25Â 2N2668 2N2669 2N2670 2N1042 2N1043 MT-27 2N3214 TO37 2N2283 2N2282 TO13 diode e 2060 MT28 2n1755 2N1044

    2n3215

    Abstract: TO13 MT28 diode e 2060 2n2284 2N1042 2N1043 2N1044 2N1045 2N2556
    Text: DI O D E T R A N S I S T O R CO INC ~flM DE Ja àMfl35E D Q D O i n 2 8 4 8 3 5 2 D I O D E T R A N S I S T O R C O INC 84D 0 0 1 1 9 |~ D r- ,5 3 - 0 7 DIODE TRANSISTOR CO.INC. 201 686-0400 • Tela*: 139-385 • O u ts id e N Y & N J «rea c a ll T O L L F R E E 800-526-4581


    OCR Scan     		PDF 2N2668 2N2669 2N2670 2N1042 2N1043 MT-27 MT-28 MT-28 2n3215 TO13 MT28 diode e 2060 2n2284 2N1044 2N1045 2N2556

    2N3215

    Abstract: MT28 TO13 2n3214 Germanium power
    Text: GERMANIUM POWER DEVICES b3E ]> • 3TM7375 000057Ö Öb3 ■ G P P GERMANIUM POWER TRANSISTORS Case Type Type Number V e to irui V hFE IC/VCE Min-Max & A/V) Vao v VC£iJal) (V@A/A) Vie @Ic/VcE (V@A/V) IcEV @ VcE (mA @ V) P d@ Tc = 25°C 9ir TJimaxi /r


    OCR Scan     		PDF 3TM7375 2N2668 2N2669 2N2670 2N1042 2N1043 2N1044 2N1045 2N2556 2N2557 2N3215 MT28 TO13 2n3214 Germanium power

    germanium transistors NPN

    Abstract: TO13 MT28 Germanium power 2N1042 2N1043 2N1044 2N1045 2N2556 2N2557
    Text: GERMANIUM POWER DEVICES b3E » • 3^47375 D0DDS7ñ Ôb3 « G P D GERMANIUM POWER TRANSISTORS I Type Num ber Case Type 2N2668 2N2669 2N2670 2N1042 2N1043 2N1044 2N1045 2N2556 2N2557 2N2558 2N2559 2N2282 2N2283 2N2284 2N3212 2N3213 2N3214 2N3215 2N1183 2N1183A


    OCR Scan     		PDF 2N2668 MT-27 2N2669 2N2670 2N1042 MT-28 2N1043 germanium transistors NPN TO13 MT28 Germanium power 2N1044 2N1045 2N2556 2N2557

    2N2067

    Abstract: 2N3214 2N158 germanium transistors NPN 2N3215 TO13 MT28 2N1759 2N158A 2N1042
    Text: DI O D E T R A N S I S T O R CO INC ~flM 2 8 4 8 3 5 2 D I O D E T R A N S I S T O R C O INC DE Ja àMfl35E D Q D O i n 84D 0 0 1 1 9 |~ D r- ,5 3 - 0 7 DIODE TRANSISTOR CO.INC. 201 686-0400 • Tela*: 139-385 • O u ts id e N Y & N J «rea c a ll T O L L F R E E 800-526-4581


    OCR Scan     		PDF 2N2668 2N2669 2N2670 2N1042 2N1043 MT-27 MT-28 MT-28 2N2067 2N3214 2N158 germanium transistors NPN 2N3215 TO13 MT28 2N1759 2N158A

    2N158A

    Abstract: germanium NPN 2N1761 2n1218 2N2067 germanium transistors NPN TO13 MT28 2N1042 2N1044
    Text: GERMANIUM POWER TRANSISTORS h rc I c/ Y Type Number Case Type Y ebo V J'c E O d w l y AíV ce Min-Max ® A /V @ V CE @ /c //fl (V® A/A) (V@A/V) (mA®V) Po® Tc =25°C &JC (watts) r e /W ) CC) / t (KHzi 3 AM P GERM A NIUM PN P (Coni.) 2N2668 2N2669 2N2670


    OCR Scan     		PDF 2N2668 MT-27 2N2669 2N2670 2N1042 MT-28 2N1043 2N158A germanium NPN 2N1761 2n1218 2N2067 germanium transistors NPN TO13 MT28 2N1044

    Untitled

    Abstract: No abstract text available
    Text: N EW ENGLAND SEMICONDUCTOR BIPOLAR NPN TRANSISTOR TO-39/TO-5 PACKAGE NPN TO-39 jLf ¡11 NPN TO-5 iff /y DEVICE TYPE V ceo sus VOLTS Ic (max) AMPS 2N1479A 40 1.5 20-60@.2/4 2N1480A 55 1.5 2N1481A 40 2N1482A 1*FE@ IC/ ^ ce (min/max @ A/V) VcE(s»t) @ (V @ A/A)


    OCR Scan     		PDF O-39/TO-5 2N1479A 2N1480A 2N1481A 2N1482A 2N1714A 2N1715A 2N1716A 2N1717A 2N1890

    2N3440A

    Abstract: No abstract text available
    Text: N EW ENGLAND SEMICONDUCTOR BIPOLAR NPN TRANSISTOR TO-39/TO-5 PACKAGE NPN TO-39 Hr ¡11 NPN TO-5 hr H/ VcEO Ic DEVICE TYPE sus VOLTS (max) AMPS V Vce 2N1479A 40 1.5 20-60@.2/4 2N1480A 55 1.5 2N1481A 40 2N1482A hFE@ VcE(j»t) pr D* WATTS (MHz) 1.4@.2/,02 5


    OCR Scan     		PDF O-39/TO-5 2N1479A 2N1480A 2N1481A 2N1482A 2N1714A 2N1715A 2N1716A 2N1717A 2N1890 2N3440A