fuse d type

Abstract: 1601-7R lm 2004 1001-7R 1301-7R bm 3000 dc-dc converter
Contextual Info: M Series Data Sheet 50 Watt DC-DC Converters Wide input voltage from 8 to372 V DC 1, 2 or 3 isolated outputs up to 48 V DC Class I equipment LGA • Rugged electrical and mechanical design • Outputs individually controlled with excellent dynamic properties

Contextual Info: MA03D Series Universal input voltage Isolated & Regulated single output AC-DC Converter PRODUCT FEATURES Compact, light Weight Universal input voltage via same terminals Wide input voltage range : 85 to264VAC(120 to370VDC) Efficiency up to 73% o o Operating temperature :-20 C to+85 C

Contextual Info: SK12070 THIS DRAWING CONTAINS INFORMATION PROPRIETARY TO POSITRONIC AND IT'S SUBSIDIARIES. POSITRONIC BELIEVES THE DATA ON THIS DRAWING TO BE RELIABLE, SINCE THE TECHNICAL INFORMATION IS GIVEN FREE OF CHARGE, THE USER EMPLOYS SUCH INFORMATION AT HIS OWN DISCRETION

TO-37

Abstract: lead selenide "temperature controller" D-10
Contextual Info: 03E 00025 fiqft4348 NE W E NG LAN D NEW ENGLAND 03 N.E.P. D D ^ | b S b M B 4 û DODODES Q | ~ NEW ENGLAND PHOTOCONDUCTOR SERIES - D, D2, G, G2 THERMOELECTRICALLY COOLED LEAD SELENIDE LEAD SULFIDE Electrical D* Peak, 750,1 Resistance Megohms Wavelength Cut-off (Microns

P210-P217

Abstract: renesas M32R m32174 M32R M32R RTD mitsubishi p93 TO41 package M32170 P210/TO37 M32170F3VWG
Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog

QFP240-P-3232-0

Abstract: TO41 package M32180F8VFP bl p76 TIN18-P137 TO9 package IEEE754 M32180F8TFP M32R DSA003646
Contextual Info: Mitsubishi Microcomputers 2002-07-12 Rev.1.0 32180 Group Under Development SINGLE-CHIP 32-BIT CMOS MICROCOMPUTER Description The 32180 Group is a 32-bit, single-chip RISC microcomputer with built-in flash memory, which was developed for use in general industrial and household equipment. To accomplish high-precision arithmetic operations, it incorporates a fully IEEE754 compliant, single-precision FPU.

IAG 080

Abstract: photodiode ingaas ghz
Contextual Info: Detectors InGaAs Avalanche Photodiode IAG-Series Description The IAG-series avalanche photodiode is the largest commercially available InGaAs APD with high responsivity and extremely fast rise and fall times throughout the 1000 to 1630 nm wavelength range. The peak responsivity at 1550 nm is ideally suited

11b3 DIODE

Abstract: diagrams hitachi ecu RTD 1185 DATA SHEET M32R RTD rtd ic 1117 3.3 analog devices 118a ECU 206 FD31 hitachi ecu datasheet
Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog

2N1378

Abstract: 2N1924 2N2374 2N1373 2N526 2N508A 2N525 2N1274 2N1305 2N2001
Contextual Info: GERMANIUM PNPSMALL SIGNAL TRANSISTORS Type ycBo V Max YFWO V Max Vc, V Max Vc, V 2N465 2N466 2N467 2N508 2N508A 2N522 2N524 2N525 2N526 2N527 2N580 2N581 2N650 2N651 2N652 2N653 2N654 2N655 2N658 2N659 2N660 2N661 2N662 2N1057 2N1097 2N1098 2N1144 2N1145

2N2876

Abstract: 2n3375 CE 65 M 2n3632 2N4132 TO-37 SPACE POWER ELECTRONICS
Contextual Info: 8440355 SPACE SPACE POWER POWER 89C ELECTRONICS ELECTRONICS 7T RF P O W E R - 2 8 VOLT D 7~-33-o/ 00119 DE~|fi44D3SS D D D D i n • 424 "7437 • ASN <«14 .437 • 046 • 356 7T50" • 375 7455 • 1658 Rated Breakdown Voltages TYPE CASE 2N2876 2N3632

Contextual Info: Silicon Avalanche Photodiode SAR1500x/3000x DESCRIPTION The SAR1500/3000x is based on a “reach-through” structure for excellent quantum efficiency and high speed. The SAR1500x is hermetically sealed in a modified TO-5 package, the SAR 3000x in a modified

Contextual Info: Silicon Avalanche Photodiode SAR-/SARP-Series DESCRIPTION The SAR500-Series is based on a “reach-through” structure for excellent quantum efficiency and high speed. The peak sensitivity in the NIR region enables rangefinding applications with pulsed laser diodes.

2SC799

Abstract: TV11 251C 27mhz transistor 27MHz power amplifier
Contextual Info: 2SC799 2SC799 NPN + £ '> U 3 V h ^ V ' ^ X ^ / N P N SILICO N EPITAXIAL TRANSISTOR \7 V '> — /'^ ilitS ^ fll/T ra n sc e iv e r Power Output ft » /F E A T U R E • 2SC799 4 tzflsBÆco tz* a m 27MHz S n C B c l L i f . n * » H / P A C K A G E DIMENSIONS

HY5630B

Abstract: HY5630 tec controller
Contextual Info: HY5630B TEC Controller Temperature Controller for Thermoelectrically Cooled Photodetectors The HY5630M monitor fixture is available and provides an easy way to measure the various outputs provided on connector P3. A DVM is connected to the output of this fixture

D2137

Abstract: active year code D2-1-37
Contextual Info: NEU ENGLAND 3 3 E D B bSbM3MÛ I313GQG3S 3 B • NEP NEP T -¿ -ü -m , _ rj.2!oZ?. NEW ENGLAND PHOTOCONDUCTOR dl l — ~ ~~~'• 3 Lead Sulfide Thermoelectrically Cooled Detectors r "•"-"IIZ T Z J Series D-D2-D21 FEATURES • Hermetically Sealed Packages

2N1377

Abstract: 2N1414 2N1373 2n1614 Germanium power 2N1925 2N508 2N526 2N1309
Contextual Info: GERMANIUM PNPSMALL SIGNAL TRANSISTORS 1im hFC Min Max ycBo V Max YFWO V Max Vc, V Max 2N465 2N 466 45 35 12 12 30 20 20 20 15 15 27-45 56-90 1 1 2N467 2N508 2N 508A 2N 522 2N 524 35 20 30 15 30 12 10 10 10 15 15 18 25 8 30 20 20 25 15 30 15 6 7 2 10 112-180

b0416

Abstract: TO-202AC
Contextual Info: POWER SILICON PNP Item Number Part Number I C 5 10 15 20 25 30 >= 40 ~~~;:~ 2SB1044M 2SB1044M 2SB731 2SB734 2SBll15 2SBl115 BFX38 2N3779 ~~~~gA BOT30A BOT30A TIP30A 2N4899 2N3775 2SA547 TN4235 2N4235 2N3740A BFS92 BSP31 TN4030 2SB954 B0240A BCP52 BCX52 ~g~~~A

MP2143

Abstract: AD162 2S8474 ad139 2N352 2N353 2N669 2N554 2N2282 2n555
Contextual Info: POWER GERMANIUM PNP Item Number Part Number I C 5 10 >= NKT302A 2S8463 2S8474 PTC194 2N352 2N352 2N353 2N353 2N296 SK3052 ~~~~~A 15 20 2N256 NKT453 2N555 2N157 2N157A CK315 CK415 MN28 ~~f:16 25 30 NKT452 2N554 NKT415 NKT451 2N589 2N2061 2N2062 2N2063 ~~~~64

B0139

Abstract: B0135 B0137 B0139-16 B0139-6 KT815B B0137-16 B0829 B01-35 B0139-10
Contextual Info: POWER SILICON NPN Ic Item Number Part Number I C 5 10 15 20 25 30 35 -40 45 50 60 - 65 70 75 80 85 90 95 Max Y(BR)CEO (A) (V) fT hFE Min Max (Hz) ICBO t, Max tf Max Po Max TOper Max (A) (s) (s) (W) (Oe) 4.4 4.4 4.4 11 11 7.0 1.2 10 20 10 7.0 14 8.0 8.0 8.0

2N2239

Contextual Info: 2N2239 Si NPN Power BJT 7.99 Transistors Bipolar Silicon NPN Power. 1 of 1 Home Part Number: 2N2239 Online Store 2N2239 Diodes Si NPN Po w er BJ T Transistors Enter code INTER3 at checkout.* Integrated Circuits

ASZ1017

Abstract: PTC155 MP1540 2N1532 2n2211 2N242 MP1542 MP280 germanium
Contextual Info: POWER GERMANIUM PNP Item Number Part Number I C 5 - 10 20 25 30 MP1540 2N1540 MP1532 CDT1320 MP1537 2N297 2N297A CDT1311 ~~~~~~ COT1111A 40051 40421 40421 40421 MP1547 2N1547 2N1547A ~~~~r 35 40 MP1533 2N1531 2N463 2N1531A 2Nl182 2Nl159 2N3213 MP1538 ~~~~3~A

TO-59 Package

Contextual Info: Detectors Silicon Avalanche Photodiode SAR-/SARP-Series Description The SAR500-Series is based on a “reach-through” structure for excellent quantum efficiency and high speed. The peak sensitivity in the NIR region enables rangefinding applications with pulsed laser diodes. A variety of package options is available.

J525

Abstract: ISS86 T030 007J
Contextual Info: 4 THIS DRAWING IS UNPUBLISHED. COPYRIGHT 3 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. - 2 - A LL RIGHTS RESERVED. LOC DIST AF 50 R E V IS IO N S LTR J4 SUGGESTED MATING DIMENSIONS .040 .030 _ ^ 1 84_ C 0.89 ] CUT-OFF [To0 5 ] R BOTH MATL: #2 HARD BRASS OR NICKEL PLATE

Contextual Info: Detectors Silicon Avalanche Photodiode SAR-/SARP-Series Description The SAR500-Series is based on a “reach-through” structure for excellent quantum efficiency and high speed. The peak sensitivity in the NIR region enables rangefinding applications with pulsed laser diodes. A variety of package options is available.