TC58NVG1S3ETA00
Abstract: TC58NVG1S3ET TC58NVG1S3 TC58NVG1S3ETA DIN2111
Text: TC58NVG1S3ETA00 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 2 GBIT 256M x 8 BIT CMOS NAND E PROM DESCRIPTION The TC58NVG1S3E is a single 3.3V 2 Gbit (2,214,592,512 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes × 64 pages × 2048blocks.
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TC58NVG1S3ETA00
TC58NVG1S3E
2048blocks.
2112-byte
2010-01-25C
TC58NVG1S3ETA00
TC58NVG1S3ET
TC58NVG1S3
TC58NVG1S3ETA
DIN2111
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TAG 8926
Abstract: Lpg 899 SDC 2921 TF 6221 HEN LED display 12V+RELAY+1+C/8 pin ic sdc 3733
Text: MCIMX31 and MCIMX31L Multimedia Applications Processors Reference Manual MCIMX31RM Rev. 1 2/2006 How to Reach Us: USA/Europe/Locations Not Listed: Freescale Semiconductor Literature Distribution Center P.O. Box 5405 Denver, Colorado 80217 1-800-521-6274 or 480-768-2130
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MCIMX31
MCIMX31L
MCIMX31RM
IOIS16
IOIS16/WP
MCIMX31L
TAG 8926
Lpg 899
SDC 2921
TF 6221 HEN LED display
12V+RELAY+1+C/8 pin ic sdc 3733
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ata5272
Abstract: 125KHz LF coil antenna for Automotive ATA5791 automotive Immobilizer atmel 545 9241a IMMOBILIZER Antenna Coil immobilizer immobilizer AUTOMOTIVE KEY operation ATA572x
Text: Atmel ATA5791 Embedded AVR Microcontroller Including RF Transmitter and Complete LF Functionality for Passive Entry/Passive Start Keys PRELIMINARY SUMMARY DATASHEET Features ● System solution for immobilizer and Passive Entry/Passive Start PEPS functionality
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ATA5791
2112-byte
32-bit
38-pin
AES-128
ata5272
125KHz LF coil antenna for Automotive
ATA5791
automotive Immobilizer
atmel 545
9241a
IMMOBILIZER Antenna Coil
immobilizer
immobilizer AUTOMOTIVE KEY operation
ATA572x
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TC58NYG0S3E
Abstract: TC58NYG0S3ETA00 TC58NYG0S
Text: TC58NYG0S3ETA00 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 1 GBIT 128M x 8 BIT CMOS NAND E PROM DESCRIPTION The TC58NYG0S3E is a single 1.8V 1 Gbit (1,107,296,256 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes × 64 pages × 1024blocks.
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TC58NYG0S3ETA00
TC58NYG0S3E
1024blocks.
2112-byte
2011-03-01C
TC58NYG0S3ETA00
TC58NYG0S
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JESD97
Abstract: NAND04G-B2D TSOP48 outline
Text: NAND16GW3B4D 16-Gbit 4 x 4 Gbits , two Chip Enable, 2112-byte page, 3 V supply, single level, multiplane, NAND flash memory Preliminary Data Features • High-density NAND flash memory – 16 Gbits of memory array – 512 Mbits of spare area – Cost-effective solutions for mass storage
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NAND16GW3B4D
16-Gbit
2112-byte
TSOP48
JESD97
NAND04G-B2D
TSOP48 outline
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JESD97
Abstract: NAND08GW3C2B NAND16GW3C4B 16Gbit
Text: NAND16GW3C4B 16-Gbit 2 x 8 Gbits , two Chip Enable, 2112-byte page, 3 V supply, multilevel, multiplane, NAND flash memory Preliminary Data Features • High density multilevel cell (MLC) flash memory – 16 Gbits of memory array – 512 Mbits of spare area
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NAND16GW3C4B
16-Gbit
2112-byte
JESD97
NAND08GW3C2B
NAND16GW3C4B
16Gbit
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48-pin TSOP
Abstract: K9K2G08U0M 48-pin TSOP (I) flash memory K9K2G08U0M-YCB0 samsung 1Gb nand flash SAMSUNG 4gb NAND Flash Qualification Report K9K2G08Q0M-Y K9K2G08Q0M-YCB0 K9K2G16Q0M-Y K9K2G16Q0M-YCB0
Text: K9K2G08Q0M-YCB0,YIB0 K9K2G08U0M-YCB0,YIB0 Advance FLASH MEMORY K9K2G16Q0M-YCB0,YIB0 K9K2G16U0M-YCB0,YIB0 K9KDocument Title 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory Revision History Revision No History Draft Date Remark 0.0 1. Initial issue Aug. 30.2001
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K9K2G08Q0M-YCB0
K9K2G08U0M-YCB0
K9K2G16Q0M-YCB0
K9K2G16U0M-YCB0
48-pin TSOP
K9K2G08U0M
48-pin TSOP (I) flash memory
samsung 1Gb nand flash
SAMSUNG 4gb NAND Flash Qualification Report
K9K2G08Q0M-Y
K9K2G16Q0M-Y
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Untitled
Abstract: No abstract text available
Text: MEMORY MODULE FLASH Nand 1Gx8-SOP Flash Memory MODULE 3DFN4G08VS1636 8Gbit Flash Nand organized as 1Gx8, based on 512Mx8 Pin Assignment Top View SOP 50 (Pitch : 0.50 mm) – Package D1 Features - Organization -Memory Cell Array (512M+16.384KM)bitx8. - Automatic Program and Erase
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3DFN4G08VS1636
512Mx8
384KM
3DFP-0636-REV
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for lpc3180
Abstract: UM10198 PLL397 Philips power supply PE 1957 8044 8048 microcontroller role in keyboard interface nand flash algorithm, arm9, micron LM 4088 hynix nand PROGRAMMING K9K1208Q0C
Text: UM10198 LPC3180 User Manual Rev. 01 — 6 June 2006 Document information Info Content Keywords LPC3180; ARM9; 16/32-bit ARM microcontroller Abstract User manual for LPC3180 User manual UM10198 Philips Semiconductors LPC3180 User Manual Revision history Rev
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UM10198
LPC3180
LPC3180;
16/32-bit
LPC3180
UM10198
for lpc3180
PLL397
Philips power supply PE 1957
8044
8048 microcontroller role in keyboard interface
nand flash algorithm, arm9, micron
LM 4088
hynix nand PROGRAMMING
K9K1208Q0C
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HY27UF082G2A
Abstract: HY27UF162G2A hy27uf082G hy27uf082 52-ULGA hynix nand 2G hynix nand flash 2gb HY27UF hynix nand hynix nand spare area
Text: HY27UF 08/16 2G2A Series 2Gbit (256Mx8bit/128Mx16bit) NAND Flash 2Gb NAND FLASH HY27UF082G2A HY27UF162G2A This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for use of circuits described. No patent licenses are implied.
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HY27UF
256Mx8bit/128Mx16bit)
HY27UF082G2A
HY27UF162G2A
HY27UF082G2A
HY27UF162G2A
hy27uf082G
hy27uf082
52-ULGA
hynix nand 2G
hynix nand flash 2gb
hynix nand
hynix nand spare area
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Untitled
Abstract: No abstract text available
Text: NAND02G-B2D 2 Gbit, 2112-byte/1056-word page multiplane architecture, 1.8 V or 3 V, NAND Flash memories Preliminary Data Features • High density NAND Flash memory – Up to 2 Gbit memory array – Cost-effective solution for mass storage applications ■
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NAND02G-B2D
2112-byte/1056-word
TSOP48
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Samsung Flash K9WAG08U1A
Abstract: K9K8G08U0A K9K8G08U0A-PCB0 K9WAG08U0A K9F4G08U0A Samsung K9K8G08U0A K9WAG08U1A K9WAG08U1A-PCB0 K9XXG08UXA K9NBG08U5A
Text: K9WAG08U1A K9K8G08U0A K9NBG08U5A FLASH MEMORY K9XXG08UXA INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,
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K9WAG08U1A
K9K8G08U0A
K9NBG08U5A
K9XXG08UXA
Samsung Flash K9WAG08U1A
K9K8G08U0A-PCB0
K9WAG08U0A
K9F4G08U0A
Samsung K9K8G08U0A
K9WAG08U1A
K9WAG08U1A-PCB0
K9XXG08UXA
K9NBG08U5A
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A 7800
Abstract: No abstract text available
Text: DATASHEET BROCADE 7800 EXTENSION SWITCH DATASHEET BROCADE 7800 EXTENSION SWITCH DATA CENTER THE BROCADE 7800 EXTENSION SWITCH IS AN IDEAL PLATFORM FOR BUILDING OR EXPANDING A HIGH-PERFORMANCE SAN EXTENSION INFRASTRUCTURE FOR DISASTER RECOVERY, DATA PROTECTION, AND DATA MOBILITY STORAGE SOLUTIONS
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samsung 2GB X16 Nand flash
Abstract: SAMSUNG 4gb NAND Flash Qualification Report K9F1G16Q0M-YCB0 samsung 2GB X8 Nand flash SAMSUNG NAND Flash Qualification Report SAMSUNG 128Mb NAND Flash Qualification Reliability SAMSUNG 256Mb NAND Flash Qualification Reliability
Text: K9F1G08Q0M-YCB0,YIB0 K9F1G08U0M-YCB0,YIB0 K9F1G16Q0M-YCB0,YIB0 K9F1G16U0M-YCB0,YIB0 K9F1G08U0M-VCB0,VIB0 Advance FLASH MEMORY Document Title 128M x 8 Bit / 64M x 16 Bit NAND Flash Memory Revision History Revision No History Draft Date Remark 0.0 1. Initial issue
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K9F1G08Q0M-YCB0
K9F1G08U0M-YCB0
K9F1G16Q0M-YCB0
K9F1G16U0M-YCB0
K9F1G08U0M-VCB0
samsung 2GB X16 Nand flash
SAMSUNG 4gb NAND Flash Qualification Report
samsung 2GB X8 Nand flash
SAMSUNG NAND Flash Qualification Report
SAMSUNG 128Mb NAND Flash Qualification Reliability
SAMSUNG 256Mb NAND Flash Qualification Reliability
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ULGA52
Abstract: NAND08GW3B2C ONFI nand flash NAND04GW3B2DN6 NAND08G-B2C NAND08GR3B4C NAND08GW3B4C
Text: NAND04G-B2D NAND08G-BxC 4-Gbit, 8-Gbit, 2112-byte/1056-word page multiplane architecture, 1.8 V or 3 V, SLC NAND flash memories Features • High density NAND flash memory – Up to 8 Gbits of memory array – Cost-effective solution for mass storage applications
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NAND04G-B2D
NAND08G-BxC
2112-byte/1056-word
ULGA52
NAND08GW3B2C
ONFI nand flash
NAND04GW3B2DN6
NAND08G-B2C
NAND08GR3B4C
NAND08GW3B4C
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K9F1G08U0A-PCB0
Abstract: No abstract text available
Text: Preliminary FLASH MEMORY K9F1G08R0A K9F1G08U0A K9K2G08U1A Document Title 128M x 8 Bit / 256M x 8 Bit NAND Flash Memory Revision History Revision No 0.0 0.1 History Draft Date Remark 1. Initial issue 1. The tADL Address to Data Loading Time is added. - tADL Minimum 100ns (Page 11, 23~26)
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K9F1G08R0A
K9F1G08U0A
K9K2G08U1A
100ns
K9F1G08U0A-PCB0
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SAMSUNG 4gb NAND Flash Qualification Report
Abstract: No abstract text available
Text: K9F1G08Q0M-YCB0,YIB0 K9F1G08U0M-YCB0,YIB0 K9F1G16Q0M-YCB0,YIB0 K9F1G16U0M-YCB0,YIB0 K9F1G08U0M-VCB0,VIB0 Advance FLASH MEMORY Document Title 128M x 8 Bit / 64M x 16 Bit NAND Flash Memory Revision History Revision No History Draft Date Remark 0.0 1. Initial issue
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K9F1G08Q0M-YCB0
K9F1G08U0M-YCB0
K9F1G16Q0M-YCB0
K9F1G16U0M-YCB0
K9F1G08U0M-VCB0
SAMSUNG 4gb NAND Flash Qualification Report
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Untitled
Abstract: No abstract text available
Text: FLASH MEMORY K9K2G08U0A Document Title 256M x 8 Bit NAND Flash Memory Revision History Revision No 0.0 History Draft Date Remark 1. Initial issue May. 31. 2004 Advance The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the
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K9K2G08U0A
K9K2G08U0A-Y
K9K2G08U0A-V
K9K2G08U0A
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K9F1G08U0C
Abstract: K9F1G08U0C-PIB0 K9F1G08U0C-PCB0 K9F1G08U0C-P SAMSUNG K9F1G08U0C NAND Flash Qualification Report K9F1G08B0C K9F1G08U0C TSOP K9F1G08U0CPCB0 K9F1G08X0C SAMSUNG NAND Flash Qualification Report
Text: Advance FLASH MEMORY K9F1G08B0C K9F1G08U0C K9F1G08X0C INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,
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K9F1G08B0C
K9F1G08U0C
K9F1G08X0C
K9F1G08U0C
K9F1G08U0C-PIB0
K9F1G08U0C-PCB0
K9F1G08U0C-P
SAMSUNG K9F1G08U0C NAND Flash Qualification Report
K9F1G08U0C TSOP
K9F1G08U0CPCB0
K9F1G08X0C
SAMSUNG NAND Flash Qualification Report
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nand flash 512M
Abstract: K5D1G K5D1G13KCM-D075 4Mx32x4banks SAMSUNG MCP 14X14mm K5D1G13 SAMSUNG 512Mb NAND Flash Qualification Report
Text: Target MCP MEMORY K5D1G13KCM-D075 MCP Specification 1Gb NAND Flash + 512Mb Mobile SDRAM INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,
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K5D1G13KCM-D075
512Mb
119-Ball
nand flash 512M
K5D1G
K5D1G13KCM-D075
4Mx32x4banks
SAMSUNG MCP
14X14mm
K5D1G13
SAMSUNG 512Mb NAND Flash Qualification Report
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S34ML01G1
Abstract: S34ML02G1 Spansion NAND Flash S34ML01G1 S34ML04G1 S34ML08G1 S34ML08G S34ML04G
Text: Spansion SLC NAND Flash Memory for Embedded 1 Gb, 2 Gb, 4 Gb Densities: 1-bit ECC, x8 I/O and 3V VCC S34ML01G1, S34ML02G1, S34ML04G1 Spansion® SLC NAND Flash Memory for Embedded Cover Sheet Data Sheet Preliminary Notice to Readers: This document states the current technical specifications regarding the Spansion
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S34ML01G1,
S34ML02G1,
S34ML04G1
S34ML01G1
S34ML02G1
Spansion NAND Flash S34ML01G1
S34ML04G1
S34ML08G1
S34ML08G
S34ML04G
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63-vfbga
Abstract: tray bga 8 X 8
Text: Spansion SLC NAND Flash Memory for Embedded 1 Gb, 2 Gb, 4 Gb Densities: 1-bit ECC, x8 and x16 I/O, 3V VCC S34ML01G1, S34ML02G1, S34ML04G1 Spansion® SLC NAND Flash Memory for Embedded Cover Sheet Data Sheet Notice to Readers: This document states the current technical specifications regarding the Spansion
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S34ML01G1,
S34ML02G1,
S34ML04G1
S34ML01G1
63-vfbga
tray bga 8 X 8
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S34ML01G1
Abstract: TSOP48 footprint
Text: Spansion SLC NAND Flash Memory for Embedded 1 Gb, 2 Gb, 4 Gb Densities: 1-bit ECC, x8 I/O and 3V VCC S34ML01G1, S34ML02G1, S34ML04G1 Spansion® SLC NAND Flash Memory for Embedded Cover Sheet Data Sheet Advance Information Notice to Readers: This document states the current technical specifications regarding the Spansion
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S34ML01G1,
S34ML02G1,
S34ML04G1
S34ML01G1
TSOP48 footprint
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TH58NVG2S3BTG00
Abstract: th58nvg th58nvg2s3btg TH58NVG2S3 PSL 26 DIN2111 PA15 PA16 th58nvg*t TH58NVG2S3B
Text: TH58NVG2S3BTG00 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 4 GBIT 512M x 8 BIT CMOS NAND E PROM Lead-Free DESCRIPTION The TH58NVG2S3B is a single 3.3 V 4Gbit (4,429,185,024 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes × 64 pages × 4096 blocks.
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TH58NVG2S3BTG00
TH58NVG2S3B
2112-byte
004-08-20A
TH58NVG2S3BTG00
th58nvg
th58nvg2s3btg
TH58NVG2S3
PSL 26
DIN2111
PA15
PA16
th58nvg*t
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