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    230N10 Search Results

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    230N10 Price and Stock

    Infineon Technologies AG ISZ230N10NM6ATMA1

    TRENCH >=100V PG-TSDSON-8
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    DigiKey ISZ230N10NM6ATMA1 Cut Tape 12,983 1
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    ISZ230N10NM6ATMA1 Digi-Reel 12,983 1
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    ISZ230N10NM6ATMA1 Reel 10,000 5,000
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    Avnet Americas ISZ230N10NM6ATMA1 Reel 105,000 12 Weeks 5,000
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    Mouser Electronics ISZ230N10NM6ATMA1 17,391
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    Newark ISZ230N10NM6ATMA1 Cut Tape 329 1
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    ISZ230N10NM6ATMA1 Reel 5,000
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    EBV Elektronik ISZ230N10NM6ATMA1 13 Weeks 5,000
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    Infineon Technologies AG ISC230N10NM6ATMA1

    TRENCH >=100V PG-TDSON-9
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    DigiKey ISC230N10NM6ATMA1 Reel 5,000 5,000
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    Avnet Americas ISC230N10NM6ATMA1 Reel 105,000 12 Weeks 5,000
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    Mouser Electronics ISC230N10NM6ATMA1 2,854
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    Newark ISC230N10NM6ATMA1 Cut Tape 4,833 5
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    ISC230N10NM6ATMA1 Reel 5,000
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    Rochester Electronics ISC230N10NM6ATMA1 11,165 1
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    Chip One Stop ISC230N10NM6ATMA1 Cut Tape 7,575
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    EBV Elektronik ISC230N10NM6ATMA1 13 Weeks 5,000
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    Littelfuse Inc IXFH230N10T

    MOSFET N-CH 100V 230A TO247AD
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    DigiKey IXFH230N10T Tube 300 1
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    Newark IXFH230N10T Bulk 300
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    RS IXFH230N10T Bulk 8 Weeks 30
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    NIDEC Components ET230N10-Z

    SWITCH TOGGLE DPDT 30A 125V
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    DigiKey ET230N10-Z Bulk 61 1
    • 1 $18.23
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    Newark ET230N10-Z Bulk 10 1
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    Chip One Stop ET230N10-Z Bulk 20
    • 1 $17.5
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    Fix Supply 50230N-10

    Push to Connect Tube Fitting - N
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    DigiKey 50230N-10 Bulk 10
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    Find more 230N10 price and stock on Findchips.com

    230N10 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    230N10

    Abstract: IXFN 230N10 230N10
    Text: Advanced Technical Information HiPerFETTM Power MOSFETs Single Die MOSFET IXFN 230N10 RDS on t rr D N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr S Symbol Test Conditions VDSS TJ = 25°C to 150°C 100 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ


    Original     		230N10 230N10 IXFN 230N10 230N10 PDF

    IXFN 230N10 230N10

    Abstract: No abstract text available
    Text: Advanced Technical Information HiPerFETTM Power MOSFETs Single Die MOSFET IXFN 230N10 VDSS ID25 RDS on trr D N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr G S Symbol Test Conditions S Maximum Ratings VDSS TJ = 25°C to 150°C 100 V VDGR


    Original     		230N10 OT-227 E153432 IXFN 230N10 230N10 PDF

    230N10

    Abstract: No abstract text available
    Text: Advanced Technical Information HiPerFETTM Power MOSFETs Single Die MOSFET IXFN 230N10 VDSS ID25 RDS on trr D N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr G S Symbol Test Conditions S Maximum Ratings VDSS TJ = 25°C to 150°C 100 V VDGR


    Original     		230N10 OT-227 230N10 PDF

    C1162

    Abstract: C1280 26n60 60N25 C1328 80N06 120N20 C1146 C1104 C1158
    Text: HiPerFETTM F-Series Contents VDSS max V 60 70 ID cont TC = 25 °C A 76 RDS(on) TC = 25 °C W 0.011 0.012 80 0.009 110 0.006 180 0.006 200 0.006 76 0.011 0.012 105 110 0.007 0.006 180 0.007 0.006 0.006 TO-247 (IXFH) PLUS247 (IXFX) TO-268 (IXFT) TO-264 (IXFK)


    Original     		O-247 PLUS247 ISOPLUS247TM O-204 O-268 O-264 76N06-11 76N06-12 80N06 180N06 C1162 C1280 26n60 60N25 C1328 120N20 C1146 C1104 C1158 PDF

    sd 20n60

    Abstract: IXFX 44N80 20n80 60n60 9n80 C2625 power mosfet 100n20 IXFH32N50 230N10 8N80
    Text: HiPerFETTM F-Series HiPerFETTM Power MOSFETs with Fast Intrinsic Diode HiPerFETTM F-Series Contents VDSS max V ID cont RDS(on) TC = 25 °C TC = 25 °C Ω A TO-247 (IXFH) PLUS247 (IXFX) ISOPLUS247TM (IXFR) TO-268 (IXFT) TO-264 (IXFK) miniBLOC (IXFN) ä IXFT 80N06


    Original     		O-247 PLUS247 ISOPLUS247TM O-268 O-264 80N06-11 76N07-11 76N07-12 100N10 170N10 sd 20n60 IXFX 44N80 20n80 60n60 9n80 C2625 power mosfet 100n20 IXFH32N50 230N10 8N80 PDF

    7n60b

    Abstract: 35N120u1 ixys dsei 45-12a DSDI 35-12A 20N80 80n06 80n60 VVY 40-16IO1 IXYS CS 2-12 IXFX 44N80
    Text: Alphanumerical Index A AXC-051 AXC-053 AXC-101 AXC-102 AXL-001 AXL-051 AXV-102 C CS 142-12io8 CS 142-16io8 CS 19-08ho1 CS 19-08ho1S CS 19-12ho1 CS 19-12ho1S CS 20-12io1 CS 20-14io1 CS 20-16io1 CS 23-08io2 CS 23-12io2 CS 23-16io2 CS 300-12io3 CS 300-16io3 CS 300-18io3


    Original     		AXC-051 AXC-053 AXC-101 AXC-102 AXL-001 AXL-051 AXV-102 142-12io8 142-16io8 19-08ho1 7n60b 35N120u1 ixys dsei 45-12a DSDI 35-12A 20N80 80n06 80n60 VVY 40-16IO1 IXYS CS 2-12 IXFX 44N80 PDF

    7N60B equivalent

    Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
    Text: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches


    Original     		MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2 PDF

    C1146

    Abstract: C1162 C1278 C1106 C1156 ixfh 60N60 C1142 c1238 C1104 ixfn 26n60
    Text: HiPerFETTM F-Series Contents VDSS max V 60 70 ID cont TC = 25 °C A 76 RDS(on) TC = 25 °C W 0.011 0.012 80 0.009 110 0.006 180 0.006 200 0.006 76 0.011 0.012 105 110 0.007 0.006 180 0.007 0.006 0.006 TO-247 (IXFH) PLUS247 (IXFX) TO-268 (IXFT) TO-264 (IXFK)


    Original     		O-247 PLUS247 ISOPLUS247TM O-204 O-268 O-264 76N06-11 76N06-12 80N06 180N06 C1146 C1162 C1278 C1106 C1156 ixfh 60N60 C1142 c1238 C1104 ixfn 26n60 PDF

    230N10

    Abstract: No abstract text available
    Text: □ IXYS Advanced Technical Information HiPerFET Power MOSFETs Single Die MOSFET IXFN 230N10 VDSS ^D25 R DS on *rr N-Channel Enhancement Mode Avalanche Rated, Highdv/dt, Lowtrr = 100 V = 230 A = 6 mQ < 250 ns s Test C onditions V DSS Tj = 25°C to 150°C


    OCR Scan     		230N10 230N10 PDF

    Untitled

    Abstract: No abstract text available
    Text: DIXYS Advanced Technical Information HiPerFET Power MOSFETs Single Die MOSFET IXFN 230N10 v ^D 2 5 p D S o n N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr t rr Maximum Ratings Symbol Test Conditions VDSS Tj =25°Cto150°C Tj = 25°C to150°C ;R GS=1 M il


    OCR Scan     		IXFN230N10 Cto150 to150 OT-227 E153432 PDF

    52N30

    Abstract: 20n80 ixfh 60N60 IXFX 44N80 15n10 7n80 E51G 44N80 60n60 46N50
    Text: HiPerFET Power MOSFETs LowGa>°-c,ar rypes- - s » F series - Avalanche ruggedness with Fast Intrinsic Diode p > Type *D(25 c r38 typ. V max. typ. max. max. fi PF PF ns nC K/W W E T jm = 150"C ► New V Tc = 25°C 76 0.011 4400 1200 100 240 0.42 360 70


    OCR Scan     		76N06-11 76N07-11 76N07-12 67N10 75N10 50N20 58N20 74N20 80N20 35N30 52N30 20n80 ixfh 60N60 IXFX 44N80 15n10 7n80 E51G 44N80 60n60 46N50 PDF

    C1218

    Abstract: C1222 ixfh 60N60 IXFX 44N80 C1138 C1238 20n80 C1228 C1172 IXFN 230N10 230N10
    Text: HiPerFET F-Series - . IXYS - - . •■ ■ ■ »♦ ■■ * 3* ■ V . Contents v DSS max V D ^CKcont DS on) Tc = 25 °C Tc = 25 °C A a TO-247 (IXFH) PLUS247 (IXFX) ISOPLUS247™ (IXFR) TO-268


    OCR Scan     		67N10 75N10 75N10Q 80N10Q O-247 PLUS247 ISOPLUS247TM O-268 O-264 80N06-11 C1218 C1222 ixfh 60N60 IXFX 44N80 C1138 C1238 20n80 C1228 C1172 IXFN 230N10 230N10 PDF

    DSE 130 -06A

    Abstract: vub 70-12 IXGH 30n120 vub 70-16 30N60B 80N10 12N60CD DSEI 30-16 AS DSEP 15-06A 13N50
    Text: Alphanumerical Index A AXC-051 AXC-051-R AXC-102 AXV-002 48 48 48 49 C CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS 142-12 ¡08 142-16 ¡08 19-08 h oi 19-08 h o lS 19-12 h o i 19-12 h o lS 20*12 io1 20-14 ¡01 20-16 ¡01


    OCR Scan     		AXC-051 AXC-051-R AXC-102 AXV-002 015-14to1 2x45-16io1 2x60-08io1 2x60-12io1 2x60-14io1 2x60-16io1 DSE 130 -06A vub 70-12 IXGH 30n120 vub 70-16 30N60B 80N10 12N60CD DSEI 30-16 AS DSEP 15-06A 13N50 PDF