6K6L
Abstract: CECC00802 CIE1931 VLMW42T2U2
Text: VLMW42T2U2-6K6L Vishay Semiconductors Standard SMD LED PLCC-2 19225 DESCRIPTION This device has been designed to meet the increasing demand for white SMD LED. The package of the VLMW42. is the PLCC-2. It consists of a lead frame which is embedded in a white thermoplast. The reflector inside this package is
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VLMW42T2U2-6K6L
VLMW42.
CIE1931
18-Jul-08
6K6L
CECC00802
VLMW42T2U2
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Untitled
Abstract: No abstract text available
Text: SPICE Device Model Si4204DY Vishay Siliconix Dual N-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
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Si4204DY
18-Jul-08
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MBR10100CT
Abstract: J-STD-002 MBR1090CT
Text: New Product MBR1090CT, MBR10100CT Vishay General Semiconductor Dual Common-Cathode High Voltage Schottky Rectifier FEATURES TMBS • Trench MOS Schottky technology TO-220AB • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability
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MBR1090CT,
MBR10100CT
O-220AB
22-B106
2002/95/EC
2002/96/EC
18-Jul-08
MBR10100CT
J-STD-002
MBR1090CT
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Untitled
Abstract: No abstract text available
Text: New Product MBRF1090CT, MBRF10100CT Vishay General Semiconductor Dual Common-Cathode High Voltage Schottky Rectifier FEATURES • Trench MOS Schottky technology TMBS • Lower power losses, high efficiency ITO-220AB • Low forward voltage drop • High forward surge capability
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MBRF1090CT,
MBRF10100CT
ITO-220AB
22-B106
2002/95/EC
2002/96/EC
ITO-220AB
2011/65/EU
2002/95/EC.
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337 SMD
Abstract: EFD20 EFD25 EFD25 12 pin EFD20/10/7-3C96
Text: more than you expect Flyback Transformers SwitchmodePower Primary Secondary Power Part Voltage Voltages Rating V-uSec Number Volts (Volts) (Watts) Rating 30399R 4.75‐16 5 12 12 5 9 30400R 4.75‐16 5 15 15 5 9 30401R 4.75‐16 5 24 24
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30399R
30400R
30401R
30402R
30403R
30404RLF1
30405R
30416R
30418R
30420R
337 SMD
EFD20
EFD25
EFD25 12 pin
EFD20/10/7-3C96
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push-pull converter design
Abstract: 30942R-LF1
Text: more than you expect Push-Pull SwitchmodePower Features Applications • Design verified with Linear Tech IC LT 1533 Economical, reliable surface mount transformers and inductors Core geometry provides shielding
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UL94V-O
26-Apr-10
push-pull converter design
30942R-LF1
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40609R-LF2
Abstract: 40609R wurth electronics
Text: more than you expect Telecom Common Mode Chokes Common ModeChokes Features • Schematic 1 Schematic 2 Part Number Port Config 40190R 40609R 40609R-LF2 SINGLE SINGLE SINGLE No. of Winds 2 2 2 Inductance
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40190R
40609R
40609RLF2
26-Apr-10
40609R-LF2
40609R
wurth electronics
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MIDCOM
Abstract: wurth ikanos 50772LF1 51576R 51719RLF1 52158R Wurth Electronics 750510 51062RLF1
Text: more than you expect Ikanos xDSL SignalTransformers Part Number 50050 50772-LF1 51062R‐LF1 51576R‐LF1 51719R‐LF1 51786R‐LF1 51949R 52125R 52158R 52158R‐LF1 52159R 52161R 52167R 52213R‐LF1 52390R‐LF1 750510164 750510165 750510173 750510174
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50772LF1
51062RLF1
51576RLF1
51719RLF1
51786RLF1
51949R
52125R
52158R
52158RLF1
52159R
MIDCOM
wurth
ikanos
51576R
Wurth Electronics
750510
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41430RLF3
Abstract: 41431RLF3 40344r-lf
Text: more than you expect Lunar Series Common Mode Chokes Common ModeChokes Features • Part Num- Port Con‐ Inductance L Current I Number Pin Style ber fig uH (mADC) of Pins 41431R‐LF3 SINGLE 165
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41431RLF3
41430RLF3
40344R
40344RLF3
26-Apr-10
41430RLF3
41431RLF3
40344r-lf
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lpddr2
Abstract: lpddr2 datasheet AES256 sha256 Atmel touchscreen ARM926EJ-S ISO7816 ad2y DFSDM
Text: Features • 400 MHz ARM926EJ-S ARM Thumb® Processor – 32 KBytes Data Cache, 32 KBytes Instruction Cache, MMU TI AT91SAM9G46 Preliminary Summary AT M EL • AT91 ARM Thumb-based Microcontrollers C O N • FI D EN • – 4-port, 4-bank DDR2/LPDDR Controller
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ARM926EJ-STM
AT91SAM9G46
64-KByte
11028BS
26-Apr-10
lpddr2
lpddr2 datasheet
AES256
sha256
Atmel touchscreen
ARM926EJ-S
ISO7816
ad2y
DFSDM
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lpddr2
Abstract: Atmel touchscreen AT91SAM9M11 lpddr2 datasheet wVGA touchscreen 5 wire 16-bit color sha256 Datasheet LPDDR2 SDRAM 12M hz crystal ARM926EJ-S e.mmc
Text: Features • 400 MHz ARM926EJ-S ARM Thumb® Processor – 32 KBytes Data Cache, 32 KBytes Instruction Cache, MMU • Memories • • • • • – 4-port, 4-bank DDR2/LPDDR Controller – External Bus Interface supporting 4-bank DDR2/LPDDR, SDRAM/LPSDR, Static
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ARM926EJ-STM
64-KByte
6437BS
26-Apr-10
lpddr2
Atmel touchscreen
AT91SAM9M11
lpddr2 datasheet
wVGA touchscreen 5 wire 16-bit color
sha256
Datasheet LPDDR2 SDRAM
12M hz crystal
ARM926EJ-S
e.mmc
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vs-10etf12
Abstract: 10ETF 10ETF10S 10ETF12S AN-994 SMD-220
Text: VS-10ETF.SPbF Soft Recovery Series Vishay High Power Products Fast Soft Recovery Rectifier Diode, 10 A FEATURES • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Compliant to RoHS directive 2002/95/EC • Halogen-free according to IEC 61249-2-21
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VS-10ETF.
J-STD-020,
2002/95/EC
SMD-220)
18-Jul-08
vs-10etf12
10ETF
10ETF10S
10ETF12S
AN-994
SMD-220
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smd diode marking code L2
Abstract: No abstract text available
Text: VS-10ETF.SPbF Soft Recovery Series Vishay High Power Products Fast Soft Recovery Rectifier Diode, 10 A FEATURES • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Compliant to RoHS directive 2002/95/EC • Halogen-free according to IEC 61249-2-21
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VS-10ETF.
J-STD-020,
2002/95/EC
SMD-220)
11-Mar-11
smd diode marking code L2
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Untitled
Abstract: No abstract text available
Text: New Product MBR1090CT, MBR10100CT Vishay General Semiconductor Dual Common-Cathode High Voltage Schottky Rectifier FEATURES TMBS • Trench MOS Schottky technology TO-220AB • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability
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MBR1090CT,
MBR10100CT
O-220AB
22-B106
2002/95/EC
2002/96/EC
15trademarks
2011/65/EU
2002/95/EC.
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SiHP12N50C
Abstract: ktp12
Text: SiHP12N50C, SiHB12N50C, SiHF12N50C Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low Figure-of-Merit Ron x Qg 560 V RDS(on) (Ω) VGS = 10 V 0.555 Qg (Max.) (nC) 48 Qgs (nC) 12 Qgd (nC) • 100 % Avalanche Tested • Gate Charge Improved
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SiHP12N50C
SiHB12N50C
SiHF12N50C
O-220AB
O-220
2002/95/EC
O-263)
ktp12
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SiHFD9010
Abstract: No abstract text available
Text: IRFD9010, SiHFD9010 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • - 50 RDS(on) (Ω) VGS = - 10 V 0.50 Qg (Max.) (nC) 11 Qgs (nC) 3.8 Qgd (nC) 4.1 Configuration Single For Automatic Insertion Compact, End Stackable
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IRFD9010,
SiHFD9010
2002/95/EC
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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lpddr2
Abstract: lpddr2 datasheet Atmel touchscreen 12M hz crystal ARM926EJ-S jtag sha256 Datasheet LPDDR2 SDRAM ddr2 ram slot pin detail Jazelle v1 Architecture Reference Manual lcd N7
Text: Features • 400 MHz ARM926EJ-S ARM Thumb® Processor – 32 KBytes Data Cache, 32 KBytes Instruction Cache, MMU • Memories • • • • • – 4-port, 4-bank DDR2/LPDDR Controller – External Bus Interface supporting 4-bank DDR2/LPDDR, SDRAM/LPSDR, Static
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ARM926EJ-STM
64-KByte
11028BS
26-Apr-10
lpddr2
lpddr2 datasheet
Atmel touchscreen
12M hz crystal
ARM926EJ-S jtag
sha256
Datasheet LPDDR2 SDRAM
ddr2 ram slot pin detail
Jazelle v1 Architecture Reference Manual
lcd N7
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SiHP12N50C
Abstract: sihb12n50c-e3
Text: SiHP12N50C, SiHB12N50C, SiHF12N50C Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low Figure-of-Merit Ron x Qg 560 V RDS(on) (Ω) VGS = 10 V 0.555 Qg (Max.) (nC) 48 Qgs (nC) 12 Qgd (nC) • 100 % Avalanche Tested • Gate Charge Improved
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SiHP12N50C
SiHB12N50C
SiHF12N50C
O-220AB
O-220
2002/95/EC
O-263)
sihb12n50c-e3
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lpddr2
Abstract: lpddr2 datasheet sam9m11 sha256 AES256 Atmel touchscreen ARM926EJ-S ISO7816 eMMC 4.4
Text: Features • 400 MHz ARM926EJ-S ARM Thumb® Processor – 32 KBytes Data Cache, 32 KBytes Instruction Cache, MMU AT91 ARM Thumb-based Microcontrollers • Preliminary Summary AT M EL • AT91SAM9M11 C O N FI D EN TI • – 4-port, 4-bank DDR2/LPDDR Controller
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ARM926EJ-STM
AT91SAM9M11
64-KByte
6437BS
26-Apr-10
lpddr2
lpddr2 datasheet
sam9m11
sha256
AES256
Atmel touchscreen
ARM926EJ-S
ISO7816
eMMC 4.4
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Untitled
Abstract: No abstract text available
Text: New Product MBR1090CT, MBR10100CT Vishay General Semiconductor Dual Common-Cathode High Voltage Schottky Rectifier FEATURES TMBS • Trench MOS Schottky technology TO-220AB • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability
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MBR1090CT,
MBR10100CT
O-220AB
22-B106
2002/95/EC
2002/96/EC
2002/95/EC.
2011/65/EU.
JS709A
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85CNQ015A
Abstract: 85CNQ015ASL 85CNQ015ASM
Text: VS-85CNQ015A Series Vishay High Power Products Schottky Rectifier New Generation 3 D-61 Package, 2 x 40 A FEATURES VS-85CNQ015A Base common cathode • 125 °C TJ operation VR < 5 V • Center tap module • Optimized for OR-ing applications 1 D-61-8 Anode
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VS-85CNQ015A
VS-85CNQ015A
D-61-8
VS-85CNQ015ASM
D-61-8-SM
18-Jul-08
85CNQ015A
85CNQ015ASL
85CNQ015ASM
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Untitled
Abstract: No abstract text available
Text: SiHP12N50C, SiHB12N50C, SiHF12N50C Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low Figure-of-Merit Ron x Qg 560 V RDS(on) (Ω) VGS = 10 V 0.555 Qg (Max.) (nC) 48 Qgs (nC) 12 Qgd (nC) • 100 % Avalanche Tested • Gate Charge Improved
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SiHP12N50C
SiHB12N50C
SiHF12N50C
O-220AB
O-220
2002/95/EC
O-263)
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Untitled
Abstract: No abstract text available
Text: VS-87CNQ020A Series Vishay High Power Products Schottky Rectifier New Generation 3 D-61 Package, 2 x 40 A FEATURES VS-87CNQ020A Base common cathode • 150 °C TJ operation • Center tap module • Optimized for 3.3 V application 1 D-61-8 Anode 1 2 Common
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VS-87CNQ020A
VS-87CNQ020A
D-61-8
VS-87CNQ020ASM
D-61-8-SM
VS-87CNQ020ASL
18-Jul-08
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IRFD9010
Abstract: IRFD9010PBF SiHFD9010
Text: IRFD9010, SiHFD9010 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • - 50 RDS(on) (Ω) VGS = - 10 V 0.50 Qg (Max.) (nC) 11 Qgs (nC) 3.8 Qgd (nC) 4.1 Configuration Single For Automatic Insertion Compact, End Stackable
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IRFD9010,
SiHFD9010
2002/95/EC
18-Jul-08
IRFD9010
IRFD9010PBF
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