26APR10 Search Results

6K6L

Abstract: CECC00802 CIE1931 VLMW42T2U2
Contextual Info: VLMW42T2U2-6K6L Vishay Semiconductors Standard SMD LED PLCC-2 19225 DESCRIPTION This device has been designed to meet the increasing demand for white SMD LED. The package of the VLMW42. is the PLCC-2. It consists of a lead frame which is embedded in a white thermoplast. The reflector inside this package is

Contextual Info: SPICE Device Model Si4204DY Vishay Siliconix Dual N-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C

MBR10100CT

Abstract: J-STD-002 MBR1090CT
Contextual Info: New Product MBR1090CT, MBR10100CT Vishay General Semiconductor Dual Common-Cathode High Voltage Schottky Rectifier FEATURES TMBS • Trench MOS Schottky technology TO-220AB • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability

Contextual Info: New Product MBRF1090CT, MBRF10100CT Vishay General Semiconductor Dual Common-Cathode High Voltage Schottky Rectifier FEATURES • Trench MOS Schottky technology TMBS • Lower power losses, high efficiency ITO-220AB • Low forward voltage drop • High forward surge capability

337 SMD

Abstract: EFD20 EFD25 EFD25 12 pin EFD20/10/7-3C96
Contextual Info: more than you expect Flyback Transformers SwitchmodePower Primary Secondary Power Part Voltage Voltages Rating V-uSec Number Volts (Volts) (Watts) Rating 30399R 4.75‐16 5 12 12 5 9 30400R 4.75‐16 5 15 15 5 9 30401R 4.75‐16 5 24 24

push-pull converter design

Abstract: 30942R-LF1
Contextual Info: more than you expect Push-Pull SwitchmodePower Features Applications •       Design verified with Linear Tech IC LT 1533 Economical, reliable surface mount transformers and inductors Core geometry provides shielding

40609R-LF2

Abstract: 40609R wurth electronics
Contextual Info: more than you expect Telecom Common Mode Chokes Common ModeChokes Features •   Schematic 1  Schematic 2  Part Number Port Config 40190R 40609R 40609R-LF2 SINGLE SINGLE SINGLE No. of Winds 2 2 2 Inductance

MIDCOM

Abstract: wurth ikanos 50772LF1 51576R 51719RLF1 52158R Wurth Electronics 750510 51062RLF1
Contextual Info: more than you expect Ikanos xDSL SignalTransformers Part Number 50050 50772-LF1 51062R‐LF1 51576R‐LF1 51719R‐LF1 51786R‐LF1 51949R 52125R 52158R 52158R‐LF1 52159R 52161R 52167R 52213R‐LF1 52390R‐LF1 750510164 750510165 750510173 750510174

41430RLF3

Abstract: 41431RLF3 40344r-lf
Contextual Info: more than you expect Lunar Series Common Mode Chokes Common ModeChokes Features •     Part Num- Port Con‐ Inductance L Current I Number Pin Style ber fig uH (mADC) of Pins 41431R‐LF3 SINGLE 165

lpddr2

Abstract: lpddr2 datasheet AES256 sha256 Atmel touchscreen ARM926EJ-S ISO7816 ad2y DFSDM
Contextual Info: Features • 400 MHz ARM926EJ-S ARM Thumb® Processor – 32 KBytes Data Cache, 32 KBytes Instruction Cache, MMU TI AT91SAM9G46 Preliminary Summary AT M EL • AT91 ARM Thumb-based Microcontrollers C O N • FI D EN • – 4-port, 4-bank DDR2/LPDDR Controller

lpddr2

Abstract: Atmel touchscreen AT91SAM9M11 lpddr2 datasheet wVGA touchscreen 5 wire 16-bit color sha256 Datasheet LPDDR2 SDRAM 12M hz crystal ARM926EJ-S e.mmc
Contextual Info: Features • 400 MHz ARM926EJ-S ARM Thumb® Processor – 32 KBytes Data Cache, 32 KBytes Instruction Cache, MMU • Memories • • • • • – 4-port, 4-bank DDR2/LPDDR Controller – External Bus Interface supporting 4-bank DDR2/LPDDR, SDRAM/LPSDR, Static

vs-10etf12

Abstract: 10ETF 10ETF10S 10ETF12S AN-994 SMD-220
Contextual Info: VS-10ETF.SPbF Soft Recovery Series Vishay High Power Products Fast Soft Recovery Rectifier Diode, 10 A FEATURES • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Compliant to RoHS directive 2002/95/EC • Halogen-free according to IEC 61249-2-21

smd diode marking code L2

Contextual Info: VS-10ETF.SPbF Soft Recovery Series Vishay High Power Products Fast Soft Recovery Rectifier Diode, 10 A FEATURES • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Compliant to RoHS directive 2002/95/EC • Halogen-free according to IEC 61249-2-21

Contextual Info: New Product MBR1090CT, MBR10100CT Vishay General Semiconductor Dual Common-Cathode High Voltage Schottky Rectifier FEATURES TMBS • Trench MOS Schottky technology TO-220AB • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability

SiHP12N50C

Abstract: ktp12
Contextual Info: SiHP12N50C, SiHB12N50C, SiHF12N50C Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low Figure-of-Merit Ron x Qg 560 V RDS(on) (Ω) VGS = 10 V 0.555 Qg (Max.) (nC) 48 Qgs (nC) 12 Qgd (nC) • 100 % Avalanche Tested • Gate Charge Improved

SiHFD9010

Contextual Info: IRFD9010, SiHFD9010 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • - 50 RDS(on) (Ω) VGS = - 10 V 0.50 Qg (Max.) (nC) 11 Qgs (nC) 3.8 Qgd (nC) 4.1 Configuration Single For Automatic Insertion Compact, End Stackable

lpddr2

Abstract: lpddr2 datasheet Atmel touchscreen 12M hz crystal ARM926EJ-S jtag sha256 Datasheet LPDDR2 SDRAM ddr2 ram slot pin detail Jazelle v1 Architecture Reference Manual lcd N7
Contextual Info: Features • 400 MHz ARM926EJ-S ARM Thumb® Processor – 32 KBytes Data Cache, 32 KBytes Instruction Cache, MMU • Memories • • • • • – 4-port, 4-bank DDR2/LPDDR Controller – External Bus Interface supporting 4-bank DDR2/LPDDR, SDRAM/LPSDR, Static

SiHP12N50C

Abstract: sihb12n50c-e3
Contextual Info: SiHP12N50C, SiHB12N50C, SiHF12N50C Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low Figure-of-Merit Ron x Qg 560 V RDS(on) (Ω) VGS = 10 V 0.555 Qg (Max.) (nC) 48 Qgs (nC) 12 Qgd (nC) • 100 % Avalanche Tested • Gate Charge Improved

lpddr2

Abstract: lpddr2 datasheet sam9m11 sha256 AES256 Atmel touchscreen ARM926EJ-S ISO7816 eMMC 4.4
Contextual Info: Features • 400 MHz ARM926EJ-S ARM Thumb® Processor – 32 KBytes Data Cache, 32 KBytes Instruction Cache, MMU AT91 ARM Thumb-based Microcontrollers • Preliminary Summary AT M EL • AT91SAM9M11 C O N FI D EN TI • – 4-port, 4-bank DDR2/LPDDR Controller

Contextual Info: New Product MBR1090CT, MBR10100CT Vishay General Semiconductor Dual Common-Cathode High Voltage Schottky Rectifier FEATURES TMBS • Trench MOS Schottky technology TO-220AB • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability

85CNQ015A

Abstract: 85CNQ015ASL 85CNQ015ASM
Contextual Info: VS-85CNQ015A Series Vishay High Power Products Schottky Rectifier New Generation 3 D-61 Package, 2 x 40 A FEATURES VS-85CNQ015A Base common cathode • 125 °C TJ operation VR < 5 V • Center tap module • Optimized for OR-ing applications 1 D-61-8 Anode

Contextual Info: SiHP12N50C, SiHB12N50C, SiHF12N50C Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low Figure-of-Merit Ron x Qg 560 V RDS(on) (Ω) VGS = 10 V 0.555 Qg (Max.) (nC) 48 Qgs (nC) 12 Qgd (nC) • 100 % Avalanche Tested • Gate Charge Improved

Contextual Info: VS-87CNQ020A Series Vishay High Power Products Schottky Rectifier New Generation 3 D-61 Package, 2 x 40 A FEATURES VS-87CNQ020A Base common cathode • 150 °C TJ operation • Center tap module • Optimized for 3.3 V application 1 D-61-8 Anode 1 2 Common

IRFD9010

Abstract: IRFD9010PBF SiHFD9010
Contextual Info: IRFD9010, SiHFD9010 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • - 50 RDS(on) (Ω) VGS = - 10 V 0.50 Qg (Max.) (nC) 11 Qgs (nC) 3.8 Qgd (nC) 4.1 Configuration Single For Automatic Insertion Compact, End Stackable