SiHP12N50C
Abstract: ktp12
Text: SiHP12N50C, SiHB12N50C, SiHF12N50C Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low Figure-of-Merit Ron x Qg 560 V RDS(on) (Ω) VGS = 10 V 0.555 Qg (Max.) (nC) 48 Qgs (nC) 12 Qgd (nC) • 100 % Avalanche Tested • Gate Charge Improved
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Original
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SiHP12N50C
SiHB12N50C
SiHF12N50C
O-220AB
O-220
2002/95/EC
O-263)
ktp12
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PDF
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SiHF
Abstract: AN609 SiHP12N50C
Text: SiHP12N50C_RC, SiHB12N50C_RC, SiHF12N50C_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter
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Original
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SiHP12N50C
SiHB12N50C
SiHF12N50C
AN609,
O220AB,
16-Apr-10
SiHF
AN609
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SiHP12N50C
Abstract: sihb12n50c-e3
Text: SiHP12N50C, SiHB12N50C, SiHF12N50C Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low Figure-of-Merit Ron x Qg 560 V RDS(on) (Ω) VGS = 10 V 0.555 Qg (Max.) (nC) 48 Qgs (nC) 12 Qgd (nC) • 100 % Avalanche Tested • Gate Charge Improved
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Original
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SiHP12N50C
SiHB12N50C
SiHF12N50C
O-220AB
O-220
2002/95/EC
O-263)
sihb12n50c-e3
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PDF
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Untitled
Abstract: No abstract text available
Text: SiHP12N50C, SiHB12N50C, SiHF12N50C Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low Figure-of-Merit Ron x Qg 560 V RDS(on) (Ω) VGS = 10 V 0.555 Qg (Max.) (nC) 48 Qgs (nC) 12 Qgd (nC) • 100 % Avalanche Tested • Gate Charge Improved
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Original
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SiHP12N50C
SiHB12N50C
SiHF12N50C
O-220AB
O-220
2002/95/EC
O-263)
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PDF
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Untitled
Abstract: No abstract text available
Text: SiHP12N50C, SiHB12N50C, SiHF12N50C Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low Figure-of-Merit Ron x Qg 560 V RDS(on) (Ω) VGS = 10 V 0.555 Qg (Max.) (nC) 48 Qgs (nC) 12 Qgd (nC) • 100 % Avalanche Tested • Gate Charge Improved
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Original
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SiHP12N50C
SiHB12N50C
SiHF12N50C
O-220AB
O-220
2002/95/EC
O-263)
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PDF
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BY 220 diode
Abstract: SiHF
Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . MOSFETs - 500 V with Max RDS on of 0.555 Ω at VGS = 10 V AND TEC I INNOVAT O L OGY SiHP12N50C, SiHB12N50C, SiHF12N50C N HN POWER MOSFETs O 19 62-2012 High-Voltage MOSFETs - 500 V N-Channel Power MOSFETs in TO-220AB, TO-220 FULLPAK, and D2PAK Packages
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Original
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SiHP12N50C
SiHB12N50C
SiHF12N50C
O-220AB,
O-220
SiP12N50C
SiB12N50C
SiF12N50C
26-Apr-10
VMN-PT0217-1208
BY 220 diode
SiHF
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PDF
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siliconix mosfet marking to-220
Abstract: No abstract text available
Text: SiHP12N50C, SiHB12N50C, SiHF12N50C Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low Figure-of-Merit Ron x Qg 560 V RDS(on) (Ω) VGS = 10 V 0.555 Qg (Max.) (nC) 48 Qgs (nC) 12 Qgd (nC) • 100 % Avalanche Tested • Gate Charge Improved
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Original
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SiHP12N50C
SiHB12N50C
SiHF12N50C
O-220AB
O-220
2002/95/EC
O-263)
SiHP12N50C-E3
siliconix mosfet marking to-220
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PDF
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Untitled
Abstract: No abstract text available
Text: SiHP12N50C, SiHB12N50C, SiHF12N50C Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low Figure-of-Merit Ron x Qg 560 V RDS(on) (Ω) VGS = 10 V 0.555 Qg (Max.) (nC) 48 Qgs (nC) 12 Qgd (nC) • 100 % Avalanche Tested • Gate Charge Improved
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Original
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SiHP12N50C
SiHB12N50C
SiHF12N50C
O-220AB
O-220
2002/95/EC
O-263)
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PDF
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si7121
Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
Text: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®
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Original
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Mediu33-4-9337-2727
VMN-SG2127-1210
si7121
Si4914B
SI-4102
SI4599
Si4483A
sir166
irfd120
si7949
si4459a
SIR836
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PDF
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SiHP12N50
Abstract: No abstract text available
Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . HIGH-VOLTAGE POWER MOSFETs FEATURES • Maximum RDS on of 0.555 Ω at VGS = 10 V • Low gate charge, Qg max = 48 nC • RDS(on) * Qg FOM of 26.64 Ω-nC • 100 % avalanche tested • Improved Trr / Qrr • Compliant to RoHS Directive 2002/95/EC
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Original
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SiHP12N50
SiHB12N50
SiHF12N50
O-220AB,
O-220
2002/95/EC
SiHP12N50C
SiHB12N50C
SiHF12N50C
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PDF
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