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    SIHP12N50C Price and Stock

    Vishay Siliconix SIHP12N50C-E3

    MOSFET N-CH 500V 12A TO220AB
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    DigiKey SIHP12N50C-E3 Tube 1,000 1
    • 1 $5.54
    • 10 $3.695
    • 100 $5.54
    • 1000 $2.1
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    Vishay Intertechnologies SIHFB11N50A-E3

    MOSFETs RECOMMENDED ALT SIHP
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    TTI SIHFB11N50A-E3 Reel 1,000
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    Vishay Siliconix SIHP12N50CE3

    POWER MOSFET Power Field-Effect Transistor, 12A I(D), 500V, 0.555ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
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    ComSIT USA SIHP12N50CE3 900
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    SIHP12N50C Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SIHP12N50C-E3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 500V 12A TO-220AB Original PDF

    SIHP12N50C Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    SiHP12N50C

    Abstract: ktp12
    Text: SiHP12N50C, SiHB12N50C, SiHF12N50C Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low Figure-of-Merit Ron x Qg 560 V RDS(on) (Ω) VGS = 10 V 0.555 Qg (Max.) (nC) 48 Qgs (nC) 12 Qgd (nC) • 100 % Avalanche Tested • Gate Charge Improved


    Original     		SiHP12N50C SiHB12N50C SiHF12N50C O-220AB O-220 2002/95/EC O-263) ktp12 PDF

    SiHF

    Abstract: AN609 SiHP12N50C
    Text: SiHP12N50C_RC, SiHB12N50C_RC, SiHF12N50C_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter


    Original     		SiHP12N50C SiHB12N50C SiHF12N50C AN609, O220AB, 16-Apr-10 SiHF AN609 PDF

    SiHP12N50C

    Abstract: sihb12n50c-e3
    Text: SiHP12N50C, SiHB12N50C, SiHF12N50C Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low Figure-of-Merit Ron x Qg 560 V RDS(on) (Ω) VGS = 10 V 0.555 Qg (Max.) (nC) 48 Qgs (nC) 12 Qgd (nC) • 100 % Avalanche Tested • Gate Charge Improved


    Original     		SiHP12N50C SiHB12N50C SiHF12N50C O-220AB O-220 2002/95/EC O-263) sihb12n50c-e3 PDF

    Untitled

    Abstract: No abstract text available
    Text: SiHP12N50C, SiHB12N50C, SiHF12N50C Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low Figure-of-Merit Ron x Qg 560 V RDS(on) (Ω) VGS = 10 V 0.555 Qg (Max.) (nC) 48 Qgs (nC) 12 Qgd (nC) • 100 % Avalanche Tested • Gate Charge Improved


    Original     		SiHP12N50C SiHB12N50C SiHF12N50C O-220AB O-220 2002/95/EC O-263) PDF

    Untitled

    Abstract: No abstract text available
    Text: SiHP12N50C, SiHB12N50C, SiHF12N50C Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low Figure-of-Merit Ron x Qg 560 V RDS(on) (Ω) VGS = 10 V 0.555 Qg (Max.) (nC) 48 Qgs (nC) 12 Qgd (nC) • 100 % Avalanche Tested • Gate Charge Improved


    Original     		SiHP12N50C SiHB12N50C SiHF12N50C O-220AB O-220 2002/95/EC O-263) PDF

    BY 220 diode

    Abstract: SiHF
    Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . MOSFETs - 500 V with Max RDS on of 0.555 Ω at VGS = 10 V AND TEC I INNOVAT O L OGY SiHP12N50C, SiHB12N50C, SiHF12N50C N HN POWER MOSFETs O 19 62-2012 High-Voltage MOSFETs - 500 V N-Channel Power MOSFETs in TO-220AB, TO-220 FULLPAK, and D2PAK Packages


    Original     		SiHP12N50C SiHB12N50C SiHF12N50C O-220AB, O-220 SiP12N50C SiB12N50C SiF12N50C 26-Apr-10 VMN-PT0217-1208 BY 220 diode SiHF PDF

    siliconix mosfet marking to-220

    Abstract: No abstract text available
    Text: SiHP12N50C, SiHB12N50C, SiHF12N50C Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low Figure-of-Merit Ron x Qg 560 V RDS(on) (Ω) VGS = 10 V 0.555 Qg (Max.) (nC) 48 Qgs (nC) 12 Qgd (nC) • 100 % Avalanche Tested • Gate Charge Improved


    Original     		SiHP12N50C SiHB12N50C SiHF12N50C O-220AB O-220 2002/95/EC O-263) SiHP12N50C-E3 siliconix mosfet marking to-220 PDF

    Untitled

    Abstract: No abstract text available
    Text: SiHP12N50C, SiHB12N50C, SiHF12N50C Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low Figure-of-Merit Ron x Qg 560 V RDS(on) (Ω) VGS = 10 V 0.555 Qg (Max.) (nC) 48 Qgs (nC) 12 Qgd (nC) • 100 % Avalanche Tested • Gate Charge Improved


    Original     		SiHP12N50C SiHB12N50C SiHF12N50C O-220AB O-220 2002/95/EC O-263) PDF

    si7121

    Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
    Text: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®


    Original     		Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836 PDF

    SiHP12N50

    Abstract: No abstract text available
    Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . HIGH-VOLTAGE POWER MOSFETs FEATURES • Maximum RDS on of 0.555 Ω at VGS = 10 V • Low gate charge, Qg max = 48 nC • RDS(on) * Qg FOM of 26.64 Ω-nC • 100 % avalanche tested • Improved Trr / Qrr • Compliant to RoHS Directive 2002/95/EC


    Original     		SiHP12N50 SiHB12N50 SiHF12N50 O-220AB, O-220 2002/95/EC SiHP12N50C SiHB12N50C SiHF12N50C PDF