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    SIHB12N50C Price and Stock

    Vishay Siliconix SIHB12N50C-E3

    MOSFET N-CH 500V 12A D2PAK
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    DigiKey SIHB12N50C-E3 Reel 1,000
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    RS SIHB12N50C-E3 Bulk 100
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    Bristol Electronics SIHB12N50C-E3 550
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    Quest Components SIHB12N50C-E3 440
    • 1 $5.856
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    Vishay Intertechnologies SIHB12N50C-E3

    N-CHANNEL 500V - Tape and Reel (Alt: SIHB12N50C-E3)
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    Avnet Americas SIHB12N50C-E3 Reel 1,000
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    Bristol Electronics SIHB12N50C-E3 995
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    Quest Components SIHB12N50C-E3 796
    • 1 $5.856
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    EBV Elektronik SIHB12N50C-E3 13 Weeks 50
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    SIHB12N50C Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SIHB12N50C-E3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 500V 12A D2PAK Original PDF

    SIHB12N50C Datasheets Context Search

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    SiHP12N50C

    Abstract: ktp12
    Text: SiHP12N50C, SiHB12N50C, SiHF12N50C Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low Figure-of-Merit Ron x Qg 560 V RDS(on) (Ω) VGS = 10 V 0.555 Qg (Max.) (nC) 48 Qgs (nC) 12 Qgd (nC) • 100 % Avalanche Tested • Gate Charge Improved


    Original     		PDF SiHP12N50C SiHB12N50C SiHF12N50C O-220AB O-220 2002/95/EC O-263) ktp12

    SiHF

    Abstract: AN609 SiHP12N50C
    Text: SiHP12N50C_RC, SiHB12N50C_RC, SiHF12N50C_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter


    Original     		PDF SiHP12N50C SiHB12N50C SiHF12N50C AN609, O220AB, 16-Apr-10 SiHF AN609

    SiHP12N50C

    Abstract: sihb12n50c-e3
    Text: SiHP12N50C, SiHB12N50C, SiHF12N50C Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low Figure-of-Merit Ron x Qg 560 V RDS(on) (Ω) VGS = 10 V 0.555 Qg (Max.) (nC) 48 Qgs (nC) 12 Qgd (nC) • 100 % Avalanche Tested • Gate Charge Improved


    Original     		PDF SiHP12N50C SiHB12N50C SiHF12N50C O-220AB O-220 2002/95/EC O-263) sihb12n50c-e3

    Untitled

    Abstract: No abstract text available
    Text: SiHP12N50C, SiHB12N50C, SiHF12N50C Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low Figure-of-Merit Ron x Qg 560 V RDS(on) (Ω) VGS = 10 V 0.555 Qg (Max.) (nC) 48 Qgs (nC) 12 Qgd (nC) • 100 % Avalanche Tested • Gate Charge Improved


    Original     		PDF SiHP12N50C SiHB12N50C SiHF12N50C O-220AB O-220 2002/95/EC O-263)

    Untitled

    Abstract: No abstract text available
    Text: SiHP12N50C, SiHB12N50C, SiHF12N50C Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low Figure-of-Merit Ron x Qg 560 V RDS(on) (Ω) VGS = 10 V 0.555 Qg (Max.) (nC) 48 Qgs (nC) 12 Qgd (nC) • 100 % Avalanche Tested • Gate Charge Improved


    Original     		PDF SiHP12N50C SiHB12N50C SiHF12N50C O-220AB O-220 2002/95/EC O-263)

    BY 220 diode

    Abstract: SiHF
    Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . MOSFETs - 500 V with Max RDS on of 0.555 Ω at VGS = 10 V AND TEC I INNOVAT O L OGY SiHP12N50C, SiHB12N50C, SiHF12N50C N HN POWER MOSFETs O 19 62-2012 High-Voltage MOSFETs - 500 V N-Channel Power MOSFETs in TO-220AB, TO-220 FULLPAK, and D2PAK Packages


    Original     		PDF SiHP12N50C SiHB12N50C SiHF12N50C O-220AB, O-220 SiP12N50C SiB12N50C SiF12N50C 26-Apr-10 VMN-PT0217-1208 BY 220 diode SiHF

    siliconix mosfet marking to-220

    Abstract: No abstract text available
    Text: SiHP12N50C, SiHB12N50C, SiHF12N50C Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low Figure-of-Merit Ron x Qg 560 V RDS(on) (Ω) VGS = 10 V 0.555 Qg (Max.) (nC) 48 Qgs (nC) 12 Qgd (nC) • 100 % Avalanche Tested • Gate Charge Improved


    Original     		PDF SiHP12N50C SiHB12N50C SiHF12N50C O-220AB O-220 2002/95/EC O-263) SiHP12N50C-E3 siliconix mosfet marking to-220

    Untitled

    Abstract: No abstract text available
    Text: SiHP12N50C, SiHB12N50C, SiHF12N50C Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low Figure-of-Merit Ron x Qg 560 V RDS(on) (Ω) VGS = 10 V 0.555 Qg (Max.) (nC) 48 Qgs (nC) 12 Qgd (nC) • 100 % Avalanche Tested • Gate Charge Improved


    Original     		PDF SiHP12N50C SiHB12N50C SiHF12N50C O-220AB O-220 2002/95/EC O-263)

    si7121

    Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
    Text: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®


    Original     		PDF Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836

    SiHP12N50

    Abstract: No abstract text available
    Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . HIGH-VOLTAGE POWER MOSFETs FEATURES • Maximum RDS on of 0.555 Ω at VGS = 10 V • Low gate charge, Qg max = 48 nC • RDS(on) * Qg FOM of 26.64 Ω-nC • 100 % avalanche tested • Improved Trr / Qrr • Compliant to RoHS Directive 2002/95/EC


    Original     		PDF SiHP12N50 SiHB12N50 SiHF12N50 O-220AB, O-220 2002/95/EC SiHP12N50C SiHB12N50C SiHF12N50C