2SB1103
Abstract: 2SB1390 DSA003644
Text: 2SB1390 Silicon PNP Triple Diffused ADE-208-870 Z 1st. Edition Sep. 2000 Application Low frequency power amplifier Outline TO-220FM 2 1 12 3 1. Base 2. Collector 3. Emitter ID 4 kΩ (Typ) 200 Ω (Typ) 3 2SB1390 Absolute Maximum Ratings (Ta = 25°C) Item
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2SB1390
ADE-208-870
O-220FM
2SB1103
2SB1390
DSA003644
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2SB1390
Abstract: No abstract text available
Text: Inchange Semiconductor Product Specification 2SB1390 Silicon PNP Power Transistors DESCRIPTION •With TO-220Fa package ·High DC current gain ·Low saturation voltage ·DARLINGTON APPLICATIONS ·For use in low frequency power amplifier applications PINNING
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2SB1390
O-220Fa
O-220Fa)
-80mA
2SB1390
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Untitled
Abstract: No abstract text available
Text: 2SB139040ML 2SB139040ML SCHOTTKY BARRIER DIODE CHIPS Ø 2SB139040ML is a schottky barrier diode chips Ø Low power losses, high efficiency; Ø Guard ring construction for transient protection; Ø High ESD capability; Ø High surge capability; Ø Packaged products are widely used in switching
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2SB139040ML
2SB139040ML
2SB139040MLYY
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2SB1390
Abstract: DSA003790 2SB1103
Text: 2SB1390 Silicon PNP Triple Diffused Application Low frequency power amplifier Outline TO-220FM 2 1 12 3 1. Base 2. Collector 3. Emitter ID 4 kΩ Typ 200 Ω (Typ) 3 2SB1390 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage
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2SB1390
O-220FM
2SB1390
DSA003790
2SB1103
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2SB1390
Abstract: No abstract text available
Text: SavantIC Semiconductor Product Specification 2SB1390 Silicon PNP Power Transistors DESCRIPTION •With TO-220Fa package ·High DC current gain ·Low saturation voltage ·DARLINGTON APPLICATIONS ·For use in low frequency power amplifier applications PINNING
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2SB1390
O-220Fa
O-220Fa)
-80mA
2SB1390
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Untitled
Abstract: No abstract text available
Text: 2SB139060ML 2SB139060ML La 2SB139060ML Lb Ø Ø Ø Ø ESD Ø Ø Ø 1390µm X 1390µm; Ø 280±20µm La 1390µm Lb 1295µm 2SB139060MLYY @8.3ms VRRM 60 V IFAV 3 A IFSM 80 A TJ 125 °C TSTG -40~125 °C Tamb=25 VBR IR=0.5mA 60 - V VF IF=3A - 0.75 V IR VR=60V
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2SB139060ML
2SB139060MLYY
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Hitachi DSA002751
Abstract: No abstract text available
Text: 2SB1390 Silicon PNP Triple Diffused Application Low frequency power amplifier Outline TO-220FM 2 1 12 3 1. Base 2. Collector 3. Emitter ID 4 kΩ Typ 200 Ω (Typ) 3 Absolute Maximum Ratings (Ta = 25GC) Item Symbol Ratings Unit Collector to base voltage
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2SB1390
O-220FM
100ica,
D-85622
Hitachi DSA002751
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Untitled
Abstract: No abstract text available
Text: 2SB139040ML 2SB139040ML 肖特基二极管芯片 描述 Ø 2SB139040ML是采用硅外延工艺制造的肖特基 二极管芯片； Ø 损耗功率小，效率高； Ø 高ESD能力； Ø 高抗浪涌电流能力； Ø 具有瞬态反应保护能力的保护环结构；
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2SB139040ML
2SB139040MLYY
593dice/wafer
DO-201AD
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Untitled
Abstract: No abstract text available
Text: 2SB139060ML 2SB139060ML SCHOTTKY BARRIER DIODE CHIPS DESCRIPTION Ø 2SB139060ML is a schottky barrier diode chips fabricated in silicon epitaxial planar technology; Ø Low power losses, high efficiency; Ø High ESD capability; Ø High surge capability; Ø
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2SB139060ML
2SB139060ML
2SB139060MLYY
593dice/wafer
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Untitled
Abstract: No abstract text available
Text: 2SB139060ML 2SB139060ML SCHOTTKY BARRIER DIODE CHIPS Ø 2SB139060ML is a schottky barrier diode chips Ø Low power losses, high efficiency; Ø Guard ring construction for transient protection; Ø High ESD capability; Ø High surge capability; Ø Packaged products are widely used in switching
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2SB139060ML
2SB139060ML
2SB139060MLYY
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Hitachi DSA002787
Abstract: No abstract text available
Text: 2SB1390 Silicon PNP Triple Diffused Application Low frequency power amplifier Outline TO-220FM 2 1 12 3 1. Base 2. Collector 3. Emitter ID 4 kΩ Typ 200 Ω (Typ) 3 2SB1390 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage
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2SB1390
O-220FM
100ica,
D-85622
Hitachi DSA002787
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Untitled
Abstract: No abstract text available
Text: 2SB139060ML 2SB139060ML 肖特基二极管芯片 描述 Ø 2SB139060ML是采用硅外延工艺制造的肖特基二 极管芯片； Ø 损耗功率小，效率高； Ø 高ESD能力； Ø 高抗浪涌电流能力； Ø 具有瞬态反应保护能力的保护环结构；
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2SB139060ML
2SB139060MLYY
593dice/wafer
DO-201AD
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Untitled
Abstract: No abstract text available
Text: 2SB139040ML 2SB139040ML SCHOTTKY BARRIER DIODE CHIPS DESCRIPTION Ø 2SB139040ML is a schottky barrier diode chips fabricated in silicon epitaxial planar technology; Ø Low power losses, high efficiency; Ø High ESD capability; Ø High surge capability; Ø
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2SB139040ML
2SB139040ML
2SB139040MLYY
593dice/wafer
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7054F
Abstract: BC564A HA13563 AC123A HITACHI microcontroller H8 534 manual IC 74LS47 AC538 BC245A 2SK3235 HA13557
Text: INDEX General General Information Semiconductor Packages Sales Locations Microcontroller Microcontroller General MultiChipModules Smart Card Micro. Overview Micro. Shortform Micro. Hardware Manual Micro. Program. Manual Micro. Application Notes LCD Controller / Driver
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2sc4537
2sc454.
2sc4591
2sc4592
2sc4593
2sc460.
2sc4628
2sc4629
2sc4643
2sc4680
7054F
BC564A
HA13563
AC123A
HITACHI microcontroller H8 534 manual
IC 74LS47
AC538
BC245A
2SK3235
HA13557
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2SB1103
Abstract: 2SB1390
Text: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
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D-85622
2SB1103
2SB1390
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lvc16244
Abstract: BC240 2sk3174 CBT1G125 LV2GT14A HC32 Hitachi HA13557A transistor 2SC1162 H8 hitachi programming manual 30204SP
Text: HITACHI ELECTRONIC COMPONENTS DATABOOK 2003 INDEX General Informations Multi Perpose Products Safety Considerations Hitachi Semiconductor Package Databook HITACHI Sales Locations Diodes Microcontroller Microcontroller General Microcontroller Overview List
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HD49323A
HA12134A
HA12141N
HA12155N
HA12163
HA12167F
HA12173
HA12179F
HA12181F
HA12187F
lvc16244
BC240
2sk3174
CBT1G125
LV2GT14A
HC32 Hitachi
HA13557A
transistor 2SC1162
H8 hitachi programming manual
30204SP
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2SC 8550
Abstract: 6020v4 6030v4 HITACHI 08122B 2SC 8050 HITACHI 08123B transistor h945 H945 TRANSISTOR c 6030v4 2sk3545
Text: Status List HITACHI TRANSISTOR/GaAsIC Vol.16-4 2002.11 Topic - Hitachi High Frequency Bipolar Transistors . 2 Index . 3, 4
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3SK309
3SK317
3SK318
BB101C
BB102C
BB301C
BB302C
BB304C
BB305C
BB501C
2SC 8550
6020v4
6030v4
HITACHI 08122B
2SC 8050
HITACHI 08123B
transistor h945
H945
TRANSISTOR c 6030v4
2sk3545
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Untitled
Abstract: No abstract text available
Text: 2SB1390 Silicon PNP Triple Diffused HITACHI Application Low frequency power amplifier Outline T 0 -2 20 F M H 2 1 1. Base 2. C ollector 3. Emitter 12 3 Absolute Maximum Ratings |'o 4 kQ Typ 200 Q (Typ) ¿ 3 (T a = 2 5 °C ) Item Symbol Ratings Unit Collector to base voltage
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2SB1390
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2SB1390
Abstract: 2SB1103
Text: HITACHI 2SB1390-Silicon PNP Triple Diffused Low Frequency Power Amplifier Absolute Maximum Ratings Ta = 25°C Item S ym b o i Rating Unit Collector to base voltage VcBO -60 V Collector to emitter voltage VCEO -60 V Emitter to base voltage V EBO -7 V
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2SB1390-
O-220
2SB1390
2SB1390
2SB1103
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Untitled
Abstract: No abstract text available
Text: HITACHI 2SB1390-Silicon PNP Triple Diffused Low Frequency Power Amplifier Absolute Maximum Ratings {Ta = 25°C Item Symbol Rating Unit Collector to base voltage VCQO -6 0 V Collector to emitter voltage V CEO -60 V Emitter to base voltage V EBO -7 V
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2SB1390-------Silicon
O-220
2SB1103.
2SB1390
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Untitled
Abstract: No abstract text available
Text: 2SB1390 Silicon PNP Triple Diffused HITACHI Application Low frequency power amplifier Outline T O -2 2 0 F M Absolute Maximum Ratings Ta = 25 °C Item Symbol Ratings Unit Collector to base voltage ^G B O -6 0 V Collector to em itter voltage VCEo -6 0 V Emitter to base voltage
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2SB1390
D-85622
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2SA1115
Abstract: 2sa1015 2SB1340 2SA1432 2SA1015L 2SB1342 2SB1370 A1592 2sa112 2SB753
Text: - m £ tt « Type No. Man uf. 2SB 1249 = 2 SB 1250 2 SB 1251 2SB 1252 fé T K T s fâ T fô T 2 SB 1253 2SB 1257 2SB 1258 - if'y'ry ÿ-yjy 2SB 1259, 2SB 1260 2SB 1261 = £ SANYO 2SA15 9 2 2SB1226 2SB1227 2SB1227 2SB1228 2SBÌ223 2SB1228 a 3C T0SHÍBA 2SA1225
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2SA1225
2SA1178
2SB1226
2SB1024
2SB1342
2SB1227
2SB1024
2SB1430
2SA1115
2sa1015
2SB1340
2SA1432
2SA1015L
2SB1342
2SB1370
A1592
2sa112
2SB753
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2SB1370
Abstract: 2SB1376 2sd2083 2sb1383 2SD2012 2SB1369 2SB1371 2SB1372 2SB1373 2SB1375
Text: - 88 - T a = 2 5 U *EP(âTc=25£C A, ft m S -A. v'cBO VcEO (V) (V) ÍCCDC) (A) n (W) m n ft T (max) ( jw A) (W) (min) uh t (max) (V? te Vce (V) (Ta=25cC ) Ic/I e (A) OEPiitypfil] • BE.\oak/ (max) (V) (V) Ic (A) 1b (A) 2SB1369 □— A G -60 -60 -3 40
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2SB1369
2SB1370
2SB1371
2SB1372
2SB1373
2SB1375
2SB1376
61393A
09K/0.
2SD2099
2SB1370
2sd2083
2sb1383
2SD2012
2SB1375
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transistor 2sk
Abstract: transistor sp-10 4ac14 2SK157 transistor 2sk 70 2sj318 transistor 2sk 12 2SK2851 4AC14 TRANSISTOR 2sK 135 K 2796
Text: POWER TRANSISTOR •General switching Darlington transistor Characteristics tire 7.5 1 k - 20 k 6.0 1 k - 20 k 6.0 1 k - 20 k 8.0 1 k - 20 k 9.0 150011.5 500l_ 16.0 1 k -2 0 k 5.0 1 k -2 0 k 4.0 1 k -2 0 k 3.1 1 k -2 0 k 4.0 1 k -2 0 k 3.0 15006.0 1 k - 20 k
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2SD16
2SD1603
2SD1604
2SD1605
2SD1606
2SD1756
2SD1976
2SB1389
2SB1390
2SB1391
transistor 2sk
transistor sp-10 4ac14
2SK157
transistor 2sk 70
2sj318
transistor 2sk 12
2SK2851
4AC14
TRANSISTOR 2sK 135
K 2796
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