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    2N4395 Datasheets (14)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N4395 Semelab Bipolar NPN Device in a Hermetically sealed TO3 Metal Package. Original PDF
    2N4395 Advanced Semiconductor Silicon Transistor Selection Guide Scan PDF
    2N4395 Motorola Motorola Semiconductor Datasheet Library Scan PDF
    2N4395 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N4395 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N4395 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N4395 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N4395 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2N4395 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2N4395 Unknown Vintage Transistor Datasheets Scan PDF
    2N4395 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N4395 Silicon Transistor Low Frequency Silicon Power Transistor Scan PDF
    2N4395 Solidev Semiconductors Solid State Products (Transistor Guide) Scan PDF
    2N4395 Solitron Devices Planar Power Transistor Scan PDF

    2N4395 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    2N4395

    Abstract: No abstract text available
    Text: 2N4395 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


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    2N4395 O204AA) 31-Jul-02 2N4395 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N4395 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


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    2N4395 O204AA) 16-Jul-02 PDF

    SDT85502

    Abstract: SDT849 a/TO111 2N5002 SDT3403 SDT6314 BU208 2N2657 2N2877 2N2879
    Text: Device Type VCEO 2N2657 2N2658 2N2877 2N2878 2N2879 2N2880 2N2890 2N2891 2N3744 2N3745 2N3746 2N3747 2N3748 2N3749 2N3750 2N3751 2N3752 2N3996 2N3997 2N3998 2N3999 2N4111 2N4112 2N4113 2N4150 2N4305 2N4307 2N4309 2N4311 2N4395 2N4396 2N4895 2N4896 2N4897 2N4913


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    2N2657 2N2658 2N2877 2N2878 2N2879 2N2880 2N2890 2N2891 2N3744 2N3745 SDT85502 SDT849 a/TO111 2N5002 SDT3403 SDT6314 BU208 2N2657 2N2877 2N2879 PDF

    2N3236

    Abstract: 2N3864 2N1070 2N1488 2N2305 2N3667 2N3771 2N4347 2N5559
    Text: industrial power transistors 136 -~-~~~-~~-~~~~-~ SILICON NPN TRANSISTORS 15 Amp TYPE NUM8ER CASE SIZE 2N1069 2N1070 2N,1487 2N1488 2N1489 2N1490 2N1702 2N2305 2N3226 2N3232 2N3233 2N3234 2N3235 2N3236 2N3442 2N3863 2N3864 2N4347 2N4395 2N4396 2N5559


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    2N1069 2N1070 2N1488 2N1489 2N1490 2N1702 2N2305 2N3226 2N3232 2N3233 2N3236 2N3864 2N3667 2N3771 2N4347 2N5559 PDF

    2N3507 JANTX

    Abstract: 2N5541 2N6235 jedec Package TO-39 2n554 2n523
    Text: lc = 5.0AMPS CONTINUED DEVICE TYPE ««2N4150 2N4240 2N4395 2N4396 2N4897 2N4913 2N4914 2N4915 2N5152 2N5154 2N5237 2N5239 2N5336 2N5337 2N5338 2N5339 2N5487 2N5487 1 2N5488 2N5488 1 2N5541 2N5606 2N5608 2N5610 2N5612 2N5729 2N6233 2N6234 2N6235 *PD @ T C


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    2N4150 2N4240 2N4395 2N4396 2N4897 2N4913 2N4914 2N4915 2N5152 2N5154 2N3507 JANTX 2N5541 2N6235 jedec Package TO-39 2n554 2n523 PDF

    2N1069

    Abstract: 2N3233 2N3236 2N3226 2N3442 2N1070 2N3232 2N3863 2n4395
    Text: industrial power transistors 136 -~-~~~-~~-~~~~-~ SILICON NPN TRANSISTORS 15 Amp TYPE NUM8ER CASE SIZE 2N1069 2N1070 2N,1487 2N1488 2N1489 2N1490 2N1702 2N2305 2N3226 2N3232 2N3233 2N3234 2N3235 2N3236 2N3442 2N3863 2N3864 2N4347 2N4395 2N4396 2N5559


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    2N1069 2N1070 2N1488 2N1489 2N1490 2N1702 2N2305 2N3226 2N3232 2N3233 2N3236 2N3442 2N3863 2n4395 PDF

    BD947

    Abstract: to-53 a/TO111
    Text: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max A V (BR)CEO (V) hFE fT ICBO Max Max toN Max ON) Min (Hz) (A) (s) PD r (CE)«at Toper Max (Ohms) Max (°C) Package Style Devices 20 Watts or More, (Cont'd) . . . .5 . . . .10 .15 .


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    SDT3762 SDT3752 SDT1641 SDT3305 BD947 to-53 a/TO111 PDF

    2N4250

    Abstract: t0106 2N4142 2N4249 2N4411 2N3284 2N4248 2N4355 2N4358 2N4260
    Text: 0258354 ADVANCED SEMIC C IS l ^ o k l " Jcnj,v',t a d v a n ce d Ü D Ë TRANSISTORS 1 Po @ T c = 2 5 ° C DEVICE TYPE NO. 2N4142 2N4143 2M4150 2N4207 2N4208 2N4209 2N4210 2N4227 2N4228 2N4231 2N4232 2N4233 2N4234 2N4235 2N4236 2N4237 2N4238 2N4239 2N4248


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    2N4142 2N4143 2N4150 2N4207 T0106 2N4208 2N4209 2N4210 2N4227 2N4250 2N4249 2N4411 2N3284 2N4248 2N4355 2N4358 2N4260 PDF

    2N3907

    Abstract: No abstract text available
    Text: 4ÖE D • A1331Ö7 GÜD0437 SEMELABr TbS H S n L B SEflELAB LTD 7^ 27. BI POLAR TRANSISTORS CECC AND HIGH REL & HIGH ENERGY Type Number Rel Code 2N3879 2N3907 2N3919 2N3962 2N3963 2N3964 2N3965 2N3996 2N3997 2N3998 2N3999 2N4000 2N4001 2N4026 2N4027 2N4028


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    A1331Ã D0437 2N3879 2N3907 2N3919 2N3962 2N3963 2N3964 2N3965 2N3996 2N3907 PDF

    Untitled

    Abstract: No abstract text available
    Text: r le = 5.0 AMPS CONTINUED DATA P D@ 100°C <§> BVeb0 VOLTS JZ DEVICE VcE VcE sat @ lc SHEET 5.0 0.75 4.5 4.5 0.5 0.075 0.8 0.8 15 15 4.0 4.0 1.0 1.0 1.0 2.5 2.5 2.5 0.25 0.25 0.25 4.0 4.0 4.0 5.0 5.0 5.0 10.0 1.5 1.5 0.6 0.9 5.0 5.0 5.0 5.0 0.5 0.5 0.5 0.5


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    2N4150 2N4240 2N4395 2N4396 2N4913 2N4914 2N4915 2N5152 2N5154 2N5237 PDF

    2n7588

    Abstract: P3139 BC233A sprague 40d GEX36/7 C4274 s1766 C12712 TC236 GP149
    Text: SPRAGUE THE M A R K O F R E L I A B I L I T Y SEMICONDUCTOR REPLACEMENT MANUAL K -5 0 0 TABLE OF CONTENTS Guidelines for Replacing Semiconductors. 1 Specifications, Small-Signal and Power Transistors.


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    PDF

    semelab 2n4401

    Abstract: No abstract text available
    Text: — -


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    2N4300 2N4311 2N4358 2N4388 2N4391 2N4392 2N4393 2N4395 2N4396 2N4399 semelab 2n4401 PDF

    2NS604

    Abstract: 2NS540 2NS154 SD716 SDT13305 2N5671 2N5005 SDT425 SDT7605 SDT96302
    Text: -Jfolìtron P L A N A R P O W E R T R A N S IS T O R S Devices. Inc H DEVICE TYPE VCEO V hFE MIN/MAX 2N2387 2N2988 2N2S89 2N2990 2N2991 80 100 80 100 80 2N2992 2N2993 2N2994 2N3439 2N3440 ÎA M W P K M ic (A) PT MAX (W) CASE TYPE CHIP TYPE ic (A) 25/75 25/75


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    2N2387 2N2988 2N2S89 2N2990 2N2991 2N2992 2N2993 2N2994 2N3439 2N3440 2NS604 2NS540 2NS154 SD716 SDT13305 2N5671 2N5005 SDT425 SDT7605 SDT96302 PDF

    2N5286

    Abstract: 2N5290 SOLITRON 2N5740 SDT13305 SDT3775 SDT85502 2N439S 2N5610 2N6562
    Text: SOLITRON DEVICES INC ^ D eT| fl3t.flt.DE 0D0S7b5 7 l ~ T ' 3 3 - 0 / F ^ E x y K g T T a t m , © _ PLAN AR POWER TRAN SISTO RS § M&. DEVICE TYPE hpE MIN/MAX @ ic A VCE (sat) MAX (V) @ ic (A) *T MIN (MHz) PT


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    2N2657 2N2658 2N2877 O-111 2N2878 2N2879 2N2880 2N5286 2N5290 SOLITRON 2N5740 SDT13305 SDT3775 SDT85502 2N439S 2N5610 2N6562 PDF

    Untitled

    Abstract: No abstract text available
    Text: Z CL CL CL CL C L Z Z Z Z Z CL CL CL CL CL CL CL CL CL Z Z Z Z Z Q- CL CL CL CL z zzzz Q- CL CL CL CL 2N4910 2N4911 2N4912 2N4913 2N4914 CL CL CL CL CL Z Z Z Z Z CL CL CL CL CL Z Z Z Z Z zzzzz CL CL CL CL CL Z Z Z Z Z zzzzz o o o o o c l cl o dd z zz z ‘


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    O-39/TO-5 2N4910 2N4911 2N4912 2N4913 2N4914 O-114 O-111 PDF

    hep 154 silicon diode

    Abstract: zy 406 transistor motorola HEP 801 hep 154 diode hep R1751 triac zd 607 2sb337 RS5743.3 F82Z hep 230 pnp
    Text: SEMICONDUCTOR This guide has been prepared by the Motorola HEP technical staff to provide a cross-reference for the Hobbyist, Experimenter, and Profes­ sional service technician. The information contained herein is based on an analysis of the published specifications of each device listed. This


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    MY110B Z0206 Z0208 Z0210 Z0211 Z0212 Z0214 Z0215 Z0217 Z0219 hep 154 silicon diode zy 406 transistor motorola HEP 801 hep 154 diode hep R1751 triac zd 607 2sb337 RS5743.3 F82Z hep 230 pnp PDF

    MC2259

    Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214
    Text: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the


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    RCA SK CROSS-REFERENCE

    Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1
    Text: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered


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    transistor c2060

    Abstract: Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor
    Text: Data Book Updating Service I Table of Contents How to Use the Data Book I > INTRODUCTION Complete I N . . . INDEX numerical index o f all ElA-registered device types, with major electrical specifications 2N . . . & 3N . . . INDEX Complete numerical index of all ElA-registered device types,


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    AN-134 transistor c2060 Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor PDF

    y51 h 120c

    Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
    Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK


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    500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711 PDF

    2N5532

    Abstract: 2N5076 2N5529 SDR2710 2n5430 2N5530 2N5527 2N5528 2N5531 2N5533
    Text: 9 RADIATION RESISTANT TRANSISTORS CU R R E N T G A IN TYPE NUM BER CASE TYPE V CEO V V CBO V V EBO V hFE M IN . | M A X . CE V S A T U R A T IO N VO LTAG ES 'c A V CE s V V BE(s) V <8> 'c A 5 AMP RADIATION Mi’N 2N5527 2N5531 SDR2710 TO-5 TO-5 MT-27 60 90


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    2N5527 2N5531 SDR2710 MT-27 SDR2712 2N5528 2N5529 2N5530 O-61-1 2N5532 2N5076 2n5430 2N5533 PDF

    Germanium drift transistor

    Abstract: 2N4895 germanium transistor epitaxial mesa transistor sec tip31A halbleiter index transistor transistor BD222 BD699 EQUIVALENT kd 2060 transistor
    Text: POWER DATA BOOK FAIRCHILD 464 Ellis Street, Mountain View, California 94042 1976 Fairchild Camera and Instrum ent C orporation/464 Ellis Street, M ountain View, California 940 4 2 / 4 15 9 6 2 -5 0 1 1/TW X 910 -3 7 9-6 4 3 5 INTRODUCTION You, the customer, and your needs have dictated the form at and contents of


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    orporation/464 CH-8105 Germanium drift transistor 2N4895 germanium transistor epitaxial mesa transistor sec tip31A halbleiter index transistor transistor BD222 BD699 EQUIVALENT kd 2060 transistor PDF

    Untitled

    Abstract: No abstract text available
    Text: SEMELAB pic - SELECTOR GUIDE DISCRETE BI-POLAR DEVICES TypeNo 2N4031 2N4032 2N4033 2N4033CSM4 2N4036 2N4037 2N4046 2N4111 2N4112 2N4113 2N4114 2N4150 2N4231 2N4231A 2N4232 2N4232A 2N4233 2N4233A 2N4234 2N4235 2N4236 2N4237 2N4238 2N4239 2N4240 2N4260 2N4269


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    2N4031 2N4032 2N4033 2N4033CSM4 2N4036 2N4037 2N4046 2N4111 2N4112 2N4113 PDF

    2N5076

    Abstract: 2N5336
    Text: 19 SILICON POWER TRANSISTORS CURREI* JT G A IN TYPE NUMBER CASE TYPE V CBO V V EBO I V I V V CEO h FE M IN . I M A X . V V SA TU R A TIO P 0 V O LT A G E S 'c A V CE s V BE(s) V I V 'c A 'b I A 5 AMP SILICON NPN 2N4300 2N4305 2N4307 TO-5 TO-5 TO-5 100 120


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