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    Schaffner FN9222SB-15-07

    PWR ENT RCPT IEC320-C14 PNL WIRE
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    TE Connectivity FN9222SB-15-07

    Iec Inlet Filter 250Vac, 15A,
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    Newark FN9222SB-15-07 Bulk 120
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    2SB1507 Datasheets (6)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SB1507 Sanyo Semiconductor High-current switch Original PDF
    2SB1507 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SB1507 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SB1507 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SB1507 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SB1507 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF

    2SB1507 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: , One. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. 2SB1507 Silicon PNP Power Transistor IH DESCRIPTION • Low Collector Saturation Voltage :VCE(sat)= -0.4(V)(Max)@lc= -4A • Good Linearity of hFE


    Original
    PDF 2SB1507 2SD2280

    400m1

    Abstract: No abstract text available
    Text: Ordering number:ENN3713 PNP/NPN Epitaxial Planar Silicon Transistors 2SB1507/2SD2280 50V/7A High-Current Switching Applications Applications Package Dimensions • Relay drivers, high-speed inverters, converters. unit:mm 2039D Features [2SB1507/2SD2280] · Low collector-to-emitter saturation voltage :


    Original
    PDF ENN3713 2SB1507/2SD2280 2039D 2SB1507/2SD2280] 2SB1507 400m1

    2SB1507

    Abstract: 2SD2280
    Text: SavantIC Semiconductor Product Specification 2SB1507 Silicon PNP Power Transistors DESCRIPTION •With TO-3PML package ·Low collector saturation voltage ·Complement to type 2SD2280 ·Wide area of safe operation APPLICATIONS ·For use in relay drivers ,high-speed


    Original
    PDF 2SB1507 2SD2280 VCCC20V 2SB1507 2SD2280

    EN3713

    Abstract: 2SB1507 2039A
    Text: Ordering number:EN3713 PNP/NPN Epitaxial Planar Silicon Transistors 2SB1507/2SD2280 50V/7A High-Current Switching Applications Applications Package Dimensions • Relay drivers, high-speed inverters, converters. unit:mm 2039A Features [2SB1507/2SD2280] · Low collector-to-emitter saturation voltage :


    Original
    PDF EN3713 2SB1507/2SD2280 2SB1507/2SD2280] 2SB1507 EN3713 2SB1507 2039A

    2SB1507

    Abstract: 2SD2280
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB1507 DESCRIPTION •Low Collector Saturation Voltage :VCE sat = -0.4(V)(Max)@IC= -4A ·Good Linearity of hFE ·Wide Area of Safe Operation ·Complement to Type 2SD2280 APPLICATIONS


    Original
    PDF 2SB1507 2SD2280 2SB1507 2SD2280

    STRS6307

    Abstract: STR5412 2N3055 TO-220 S2000A3 STRS6309 S2000a2 BDW36 2SC3883 strs6308 STR6020
    Text: 2N3054 TO-66 2N32741 TO-66 2N4240 TO-66 2N4908 TO-3 2N3054A TO-66 2N3766 TO-66 2N4273 TO-66 2N4909 TO-3 2N3055 TO-3 2N3767 TO-66 2N4298 TO-66 2N4910 TO-66 2N3171 TO-3 2N3771 TO-3 2N4347 TO-3 2N4911 TO-66 2N3172 TO-3 2N3772 TO-3 2N4348 TO-3 2N4912 TO-66 2N3173


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    PDF 2N3054 2N32741 2N4240 2N4908 2N3054A 2N3766 2N4273 2N4909 2N3055 2N3767 STRS6307 STR5412 2N3055 TO-220 S2000A3 STRS6309 S2000a2 BDW36 2SC3883 strs6308 STR6020

    2SB1507

    Abstract: SB15 SR1507
    Text: [^ O rd e rin g n u m b e r : EN 3 7 1 3 2SB1507/2SD2280 P N P /N P N Epitaxial Planar Silicon Transistors H igh-C urrent Sw itching Applications A p p lic a tio n s • Relay drivers, high-speed inverters, converters. F e a tu r e s • Low collector-to-em itter saturation voltage : VcE sa t = ( —)0.4Vmax.


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    PDF 2SB1507/2SD2280 2SB1507 SB15 SR1507

    n242d

    Abstract: No abstract text available
    Text: Ordering number: EN 37 13 2SB1507/2SD2280 No.3713 PNP/NPN Epitaxial Planar Silicon Transistors S A \Y O 50V/7A Switching Applications i A p p licatio n s • Relay drivers, high-speed inverters, converters. F e a tu re s • Low collector-to-emitter saturation voltage : VcE sat = (- )0.4Vmax.


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    PDF 2SB1507/2SD2280 2SB1507 -T100 10Ib1 5111MH, n242d

    2SB1496

    Abstract: 2SB1466 2SB1516 2sb148 2SB1464 2SB1465 2SB1467 2SB1468 2SB1469 2SB1470
    Text: - 92 - Ta=25t5. *EP(3Tc=25?C £ 2SB1464 2SBI465 2SB1466 2SB1467 2SB1468 2SB1469 2SB1470 2SB1471 2SB1472 2SB1473 ni-m ine ¿0014l 0 2SB1488 2SB1489 2SB1490 2SB1492 2SB1493 2SB1494 2SB1496 2SB1498 2SB1500 2SB1501 2SB1502 2SB1503 2SB1504 2SB1505 2SB1507 2SB1508


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    PDF 2SB1464 2SB1465 -200u 2SB1466 2SB1467 2SB1468 2SB1469 2SD2275 2SB1502 2SD2276 2SB1496 2SB1516 2sb148 2SB1467 2SB1468 2SB1470

    Untitled

    Abstract: No abstract text available
    Text: Continued from previous page Electrical characteristics T a = 25 t Absolute m uknum ratings hreevcEic VC Blnt) nux 0 1C • IB Type No. type AppRcatloas VCBO (V ) VCEO M 1C (A ) PC (W ) (8 > VCE(ul) max GnV) 1C (A ) IB (m A) hFE VCE (V ) frevcE-ic 1C (A )


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    PDF 2SA1470 T0220ML 2SA1471 2SB1134 2S02176 2SD2261 2SB888 2SD1111

    2SD2232

    Abstract: 2sb1492 2SD2255 2SD2230 2SD2233 2SD2234 2SD2240 2SD2242 2SD2242A 2SD2247
    Text: - 286 - W c k & fè » rl ^ f± -in S m iê V'CBO V 2SD223Q 2SD2232 2SD2233 2SD2234 2SD2240 2SD2242 2SD2242A 2SD2247 2SD2249 2SD2250 2SD2252 2SD2254 2SD2255 2SD2256 2SD2258 2SD2259 2SD2260 2SD2263 2SD2265 2SD2266 2SD2273 2SD2274 2SD2275 2SD2276 2SD2280 2SD2281


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    PDF 2SD2230 2SD2232 2SD2233 2SD2234 2SD2240 2SD2242 2SD2242A 2SB1500 2SD221 2SB1501 2sb1492 2SD2255 2SD2233 2SD2234 2SD2247

    2SC144

    Abstract: 2SD466 2sc5266
    Text: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *


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    PDF T258-OMI FAX06 2SC144 2SD466 2sc5266

    2SB1205

    Abstract: 2S81119 2Sk222 2sa128
    Text: Low-Noise Transistors Absolute maximum ratings Device Package type Application VcBO V VCEO (V) Ve BO (V) Iç (mA) Pc (mW) rical characteristics (Ta = 25 deg. C) hFE @ V c E 'lc T| (deg. C) I c b o max fiiA l <T @ Vcc * Ic Vcs (V) &FE VCE (V) lc (mA) Vcf


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    PDF TQ220ML T0220ML T03PB 2SB1205 2S81119 2Sk222 2sa128

    2SD1213

    Abstract: e1aj 2SB1511 2SB827 2SB828 2SB829 2SB904 2SD1063 2SD1064 2SD1065
    Text: sa H y o Low-Saturation Voltage Series T0-3PB,ML Package A p p l F e a t u r e s * Low V C E( sa t ) . ♦ H i g h l y r e s i s t a n t to breakdown be c a use o f wide ASO. ♦ F a s t s w i t c h i n g speed. i c a t i o n s * R elay d r iv e r s . ♦ H ig h -sp e e d i n v e r t e r s .


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    PDF 2SB904 2SD1213 2SB1511 2SD2285 0V/60V 2SB827 2SD-126 T0-126LP T0-220CI T0-220ML e1aj 2SB828 2SB829 2SD1063 2SD1064 2SD1065