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    2SK1667-E Renesas Electronics Corporation Switching N-Channel Power Mosfet, TO-220AB, /Tube Visit Renesas Electronics Corporation
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    Rochester Electronics LLC 2SK1667-E

    N-CHANNEL POWER MOSFET
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    Renesas Electronics Corporation 2SK1667-E

    - Rail/Tube (Alt: 2SK1667-E)
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    Avnet Americas 2SK1667-E Tube 4 Weeks 139
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    Rochester Electronics 2SK1667-E 1,448 1
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    Renesas Electronics Corporation 2SK1667(E)

    MOSFET
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    Chip1Stop 2SK1667(E) 60
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    2SK1667 Datasheets (9)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SK1667 Hitachi Semiconductor Silicon N-Channel MOS FET Original PDF
    2SK1667 Hitachi Semiconductor Silicon N Channel MOS FET Original PDF
    2SK1667 Hitachi Semiconductor Mosfet Guide Original PDF
    2SK1667 Renesas Technology Silicon N Channel MOS FET Original PDF
    2SK1667 Renesas Technology Silicon N-Channel MOS FET Original PDF
    2SK1667 Hitachi Semiconductor Power Transistors Data Book Scan PDF
    2SK1667 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2SK1667 Unknown FET Data Book Scan PDF
    2SK1667-E Renesas Technology Silicon N Channel MOS FET Original PDF

    2SK1667 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Hitachi DSA002779

    Abstract: No abstract text available
    Text: 2SK1667 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC – DC converter Outline TO-220AB


    Original     		PDF 2SK1667 O-220AB D-85622 Hitachi DSA002779

    Hitachi DSA002713

    Abstract: No abstract text available
    Text: 2SK1667 Silicon N-Channel MOS FET November 1996 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC – DC converter Outline


    Original     		PDF 2SK1667 O-220AB Hitachi DSA002713

    2SK1667

    Abstract: No abstract text available
    Text: 2SK1667 Silicon N Channel MOS FET Application TO–220AB TO-220AB High speed power switching Features • • • • • Low on–resistance High speed switching Low drive current No secondary breakdown Suitable for switchingregulator, DC–DC convertor 2


    Original     		PDF 2SK1667 220AB O-220AB 2SK1667

    2SK1667

    Abstract: DSA003639
    Text: 2SK1667 Silicon N-Channel MOS FET ADE-208-1308 Z 1st. Edition Mar. 2001 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC – DC converter


    Original     		PDF 2SK1667 ADE-208-1308 O-220AB 2SK1667 DSA003639

    2SK1667

    Abstract: 2SK1667-E PRSS0004AC-A
    Text: 2SK1667 Silicon N Channel MOS FET REJ03G0964-0200 Previous: ADE-208-1308 Rev.2.00 Sep 07, 2005 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter


    Original     		PDF 2SK1667 REJ03G0964-0200 ADE-208-1308) PRSS0004AC-A O-220AB) 2SK1667 2SK1667-E PRSS0004AC-A

    2SK1667

    Abstract: Hitachi DSA00335
    Text: 2SK1667 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC – DC converter Outline TO-220AB


    Original     		PDF 2SK1667 O-220AB 2SK1667 Hitachi DSA00335

    2SK1667

    Abstract: 2SK1668
    Text: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog


    Original     		PDF

    fqp60n06

    Abstract: spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640
    Text: MOSFETs Progress in Power Switching Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions FAIRCHILD / SAMSUNG FAIRCHILD / INTERSIL HITACHI ON-SEMI PHILIPS INFINEON SIEMENS TEMIC / VISHAY TOSHIBA IR IXYS ST Nearest Preferred Supplier


    Original     		PDF STP7NB40 STT3PF30L STD20NE03L STP60NE03L-12 STP60NE03L-10 STP40NF03L STP80NE03L-06 STS4DPF30L fqp60n06 spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640

    2SK3235

    Abstract: 2SK3379 Hitachi DSA00276 HAT1040T 2SJ517 2SK1835 TO220CFM 2SK3421 HAT1053
    Text: HAT2038R/HAT2038RJ Silicon N Channel Power MOS FET High Speed Power Switching ADE-208-666C Z 4th. Edition Feb. 1999 Features • • • • For Automotive Application ( at Type Code “J “) Low on-resistance Capable of 4 V gate drive High density mounting


    Original     		PDF HAT2038R/HAT2038RJ ADE-208-666C HAT2038R HAT2038RJ pdf\7420e HAT1044M HAT1053M 2SK3235 2SK3379 Hitachi DSA00276 HAT1040T 2SJ517 2SK1835 TO220CFM 2SK3421 HAT1053

    Hitachi DSA002780

    Abstract: No abstract text available
    Text: 2SK2425 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No Secondary Breakdown Suitable for Switching regulator, DC-DC converter. Outline TO-220CFM D 12


    Original     		PDF 2SK2425 O-220CFM D-85622 Hitachi DSA002780

    Untitled

    Abstract: No abstract text available
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF

    2sk 4207

    Abstract: 2SK176 2SK975 equivalent 2SJ177 2SJ318 PM45502C 2SK2225 2sk1058 2SJ162 pwm 100w audio amplifier 2SK1336 equivalent
    Text: CONTENTS Index . 5 General Information . 9


    Original     		PDF D-85622 2sk 4207 2SK176 2SK975 equivalent 2SJ177 2SJ318 PM45502C 2SK2225 2sk1058 2SJ162 pwm 100w audio amplifier 2SK1336 equivalent

    2SK1667

    Abstract: No abstract text available
    Text: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog


    Original     		PDF

    7054F

    Abstract: BC564A HA13563 AC123A HITACHI microcontroller H8 534 manual IC 74LS47 AC538 BC245A 2SK3235 HA13557
    Text: INDEX General General Information Semiconductor Packages Sales Locations Microcontroller Microcontroller General MultiChipModules Smart Card Micro. Overview Micro. Shortform Micro. Hardware Manual Micro. Program. Manual Micro. Application Notes LCD Controller / Driver


    Original     		PDF 2sc4537 2sc454. 2sc4591 2sc4592 2sc4593 2sc460. 2sc4628 2sc4629 2sc4643 2sc4680 7054F BC564A HA13563 AC123A HITACHI microcontroller H8 534 manual IC 74LS47 AC538 BC245A 2SK3235 HA13557

    std2n52

    Abstract: stp2na60 buz102 equivalent SSH6N80 rfp60n06 replacement for IRL2203N BUZ91 equivalent RFP60N06LE IRFP460 cross reference buz91a equivalent
    Text: POWER MOSFETS CROSS REFERENCE Industry standard 2SK1119 2SK1120 2SK1151 2SK1152 2SK1153 2SK1154 2SK1155 2SK1156 2SK1157 2SK1158 2SK1159 2SK1160 2SK1161 2SK1164 2SK1166 2SK1167 2SK1168 2SK1169 2SK1170 2SK1199 2SK1202 2SK1203 2SK1204 2SK1205 2SK1231 2SK1232


    Original     		PDF 2SK1119 2SK1120 2SK1151 2SK1152 2SK1153 2SK1154 2SK1155 2SK1156 2SK1157 2SK1158 std2n52 stp2na60 buz102 equivalent SSH6N80 rfp60n06 replacement for IRL2203N BUZ91 equivalent RFP60N06LE IRFP460 cross reference buz91a equivalent

    Hitachi DSA00276

    Abstract: No abstract text available
    Text: 2SK2425 Silicon N-Channel MOS FET ADE-208-1360 Z 1st. Edition Mar. 2001 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No Secondary Breakdown Suitable for Switching regulator, DC-DC converter.


    Original     		PDF 2SK2425 ADE-208-1360 O-220CFM D-85622 Hitachi DSA00276

    IRF1830G

    Abstract: IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696
    Text: Power MOSFETs Cross-reference guide May 2005 www.st.com/pmos Contents 2 Alpha and Omega Semiconductor 3 AnalogicTech 3 Anpec 3 APEC 3 APT 4 AUK 4 Fairchild 4 Fuji 12 Hi-Sincerity 14 Hitachi 14 Infineon 14 IR 18 IXYS 22 Matsushita 23 Reneas 23 Motorola 23


    Original     		PDF AO4405 AO4407 AO4408 AO4409 AO4410 AO4411 AO4413 AO4415 AO4422 AO4700 IRF1830G IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696

    Hitachi DSA001651

    Abstract: No abstract text available
    Text: 2SK2425 Silicon N-Channel MOS FET November 1996 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No Secondary Breakdown Suitable for Switching regulator, DC-DC converter. Outline TO-220CFM


    Original     		PDF 2SK2425 O-220CFM D-85622 Hitachi DSA001651

    1002ds

    Abstract: 6020v4 TRANSISTOR BJ 131-6 2SC 8550 transistor 2sc1417 HITACHI 08122B transistor h945 6030v4 2SC 8050 25aaj
    Text: 2004.1 Renesas Transistors/Thyristors/Triacs Status List Topic—High Frequency Silicon Bipolar Transistor "2SC5998" •············································································ 2


    Original     		PDF 2SC5998" C5139 2SC5247 2SC5907 2SD1504 2SJ361 2SK439 2SK494 2SK3349 BCR5KM-12L 1002ds 6020v4 TRANSISTOR BJ 131-6 2SC 8550 transistor 2sc1417 HITACHI 08122B transistor h945 6030v4 2SC 8050 25aaj

    Untitled

    Abstract: No abstract text available
    Text: 2SK1667 Silicon N-Channel MOS FET HITACHI November 1996 Application High speed pow er switching Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC - DC converter


    OCR Scan     		PDF 2SK1667

    2SK2728

    Abstract: 2sk2729
    Text: Replacements for Power MOS FET We recommend that you consider replacing your current Power MOS FET when you develop a new product because the following product types will become obsolete. Current type Replacement 2SK741 2SK1667 2SK970 2SK2927 2SK971 2SK2928, 2SK2929


    OCR Scan     		PDF 2SK741 2SK970 2SK971 2SK972 2SK973 2SK974 2SK1093 2SK1094 2SK2728 2sk2729

    Untitled

    Abstract: No abstract text available
    Text: 2SK1667 Silicon N-Channel MOS FET HITACHI Application H igh speed pow er sw itching Features • Low on-resi stance • H igh speed sw itching • Low drive current • No secondary breakdow n • Suitable for sw itching regulator and D C - D C converter Outline


    OCR Scan     		PDF 2SK1667

    Untitled

    Abstract: No abstract text available
    Text: 2SK2425 Silicon N-Channel MOS FET HITACHI November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No Secondary Breakdown • Suitable for Switching regulator, DC-DC converter. Outline


    OCR Scan     		PDF 2SK2425

    APC UPS es 500 CIRCUIT DIAGRAM

    Abstract: sk 100 gale 065 tf 2SK1058 MOSFET APPLICATION NOTES APC UPS CIRCUIT DIAGRAM es 725 General Instrument data book 2SK2264 ESI 252 impedance meter transistor bf 175 PF0144 2SK212
    Text: Hitachi Power MOS FET DATA BOOK HITACHI ADE-408 CONTENTS • Index. 5 ■ General Information.


    OCR Scan     		PDF ADE-408 50502C APC UPS es 500 CIRCUIT DIAGRAM sk 100 gale 065 tf 2SK1058 MOSFET APPLICATION NOTES APC UPS CIRCUIT DIAGRAM es 725 General Instrument data book 2SK2264 ESI 252 impedance meter transistor bf 175 PF0144 2SK212